Page 1
Semiconductor
2N6975, 2N6976,
2N6977, 2N6978
April 1995
Features
• 5A, 400V and 500V
•V
•T
2V
CE(ON)
1µs, 0.5µs
FI
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
Applications
• Power Supplies
• Motor Drives
• Protection Circuits
Description
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
5A, 400V and 500V N-Channel IGBTs
Package
JEDEC TO-204AA
BOTTOM VIEW
C
E
COLLECTOR
(FLANGE)
EMITTER
GATE
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
G
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
2N6975 TO-204AA
2N6976 TO-204AA
2N6977 TO-204AA
2N6978 TO-204AA
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Collector-Gate Voltage (RGE = 1MΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Reverse Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Power Dissipation Derating TC > +25oC 0.8 0.8 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, T
NOTE:
1. JEDEC registered value.
= +25oC, Unless Otherwise Specified.
C
CES
CGR
CES(REV.)
GE
CM
STG
2N6975/2N6977
(Note 1)
400 500 V
400 500 V
5 5 V
±20 ±20 V
C
D
5 5 A
10 10 A
100 100 W
-55 to +150 -55 to +150
2N6976/2N6978
(Note 1) UNITS
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright
© Harris Corporation 1995
3-1
File Number 2297.2
o
C
Page 2
Specifications 2N6975, 2N6976, 2N6977, 2N6978
Electrical Specifications T
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter
Breakdown Voltage
Gate Threshold Voltage V
Zero Gate Voltage Collector
Current
Gate-Emitter Leakage Current I
Reverse Collector-Emitter
Leakage Current
= +25oC, Unless Otherwise Specified
C
BV
CESlC
GE(TH)
l
CES
= 1 mA, VGE = 0 400
VGE = VCE, IC = 1mA 2
VCE = 400V - 250
V
= 500V - - - 250
CE
TC = +125oC ----µA
V
= 400V - 1000
CE
V
= 500V - - - 1000
CE
GES
I
ECS
VGE = ±20V, VCE = 0V - 100
RGE = 0Ω, VEC = 5V - 5
LIMITS
2N6975/2N6977 2N6976/2N6978
MIN MAX MIN MAX
- 500
(Note 1)
(Note 1)
4.5
(Note 1)
(Note 1)2(Note 1)
(Note 1)
--µA
(Note 1)
(Note 1)
--µA
(Note 1)
(Note 1)
- 100
(Note 1)
(Note 1)
-5
(Note 1)
(Note 1)
UNITS
-V
4.5
V
µA
µA
ns
mA
Collector-Emitter On Voltage V
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off
W
Energy Loss per Cycle
(Off Switching Dissipation=
W
x Frequency)
OFF
Thermal Resistance
Junction-to-Case
CE(ON)IC
GEP
G(ON)IC
D(ON)
R
D(ON)
FI
OFF
R
θJC
= 5A, VGE = 10V - 2
(Note 1)
-2
(Note 1)
IC = 10A, VGE = 20V - 2.5 - 2.5 V
IC = 5A, VCE = 10V 3.4
(Note 1)
= 5A, VCE = 10V 12
6.8
(Note 1)
3.4
(Note 1)
6.8
(Note 1)
nC
(Note 1)25(Note 1)12(Note 1)25(Note 1)
IC = 5A
V
CE(CLP)
= 300V
L = 50µH
TJ = +125oC
VGE = 10V
RG = 50Ω
IC = 5A
V
CE(CLP)
= 300V
2N6975
2N6976
2N6977
2N6978
2N6975
2N6976
50 Max ns
50 Max ns
400 Max
(Note 1)
1000 Max
(Note 1)
500 Max
(Note 1)
1000 Max
(Note 1)
L = 50µH
TJ = +125oC
VGE = 10V
2N6977
2N6978
500 Max
(Note 1)
RG = 50Ω
1.25
o
C/W
(Note 1)
V
V
ns
ns
ns
µJ
µJ
NOTE:
1. JEDEC registered value.
3-2
Page 3
2N6975, 2N6976, 2N6977, 2N6978
Typical Performance Curves
VGE=V
CE
IC = 1mA
1.3
1.2
1.1
1.0
0.9
VOLTAGE
0.8
0.7
NORMALIZED GATE THRESHOLD
-50 0 +50 +100 +150
TC, JUNCTION TEMPERATURE (oC)
FIGURE 1. TYPICAL NORMALIZED GA TE THRESHOLD VOLT AGE
AS A FUNCTION OF JUNCTION TEMPERATURE FOR
ALL TYPES
(t) = r(t)Rθ
Zθ
JC
D CURVES APPLY FOR POWER PULSE
TRAIN SHOWN READ TIME AT t1
T
J(PEAK)
10
D = 0.5
1.0
0.1
IMPEDANCE (NORMALIZED)
EFFECTIVE TRANSIENT THERMAL
0.01
0.01 0.1 1.0 10 100 1000
- TC = P
JC
(PEAK)ZθJC
D = 0.2
D = 0.05
SINGLE PULSE
(t)
t, TIME (ms)
FIGURE 2. NORMALIZED THERMAL RESPONSE
CHARACTERISTICS FOR ALL TYPES
10
PULSE TEST, V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
7.5
5.0
2.5
, COLLECTOR CURRENT (A)
CE
I
0
0 2.5 7.55.0 10
VGE, GATE-TO-EMITTER VOLTAGE (V)
= 10V
CE
+125oC
-40oC
+25oC
FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS FOR ALL
TYPES
10
PULSE TEST
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
6
4
VGE = 10V
10
VGE = +10V
VGE = +8V
7.5
VGE = +7V
5.0
2.5
, COLLECTOR CURRENT (A)
CE
I
0
012345
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
VGE = +6V
TC = +25oC
VGE = +5V
VGE = +4V
FIGURE 4. TYPICAL SATURATION CHARACTERISTICS FOR
ALL TYPES
1200
f = 0.1MHz
1000
800
600
400
CISS
2
, COLLECTOR CURRENT (A)
CE
I
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VCE, COLLECTOR-TO-EMITTER ON VOLTAGE (V)
FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT FOR
ALL TYPES
C, CAPACITANCE (pF)
200
CRSS
0
01020304050
COSS
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
FIGURE 6. CAPACITANCE AS A FUNCTION OF COLLECTOR-
TO-EMITTER VOLTAGE FOR ALL TYPES
3-3
Page 4
2N6975, 2N6976, 2N6977, 2N6978
Typical Performance Curves
W
OFF
V
GE
I
C
V
CE
(Continued)
= ∫ IC * VCEdt
FIGURE 7. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
500
375
VCC = BV
CES
250
0.75 BV
125
, COLLECTOR-EMITTER VOLTAGE (V)
CE
0
V
20
0.50 BV
0.25 BV
COLLECTOR-EMITTER VOLTAGE
I
(REF)
G
(ACT)
I
G
FIGURE 9. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT
(REFER TO APPLICATION NOTES AN7254 AND AN7260)
140
C
100
90
100
=oC
T
120
100
80
60
2N6975
2N6976
= 10V
V
GE
R
= 50Ω
G
= 300/ceΩ
R
L
L = 50µH
40
VCC = 300V
T
= +150oC
, MAXIMUM OPERATING FREQUENCY (kHz)
OP
f
J
20
12345678910
ICE, COLLECTOR CURRENT (A)
PD: ALLOWABLE DISSIPATION
PC: CONDUCTION DISSIPATION
FIGURE 8. MAXIMUM OPERATING FREQUENCY vs
COLLECTOR CURRENT (TYPICAL)
10
8
6
4
2
0
, GATE-EMITTER VOLTAGE (V)
GE
V
GATE
EMITTER
VOLTAGE
CES
CES
CES
TIME (µs)
(REF) = 0.43mA
I
G
0.75 BV
0.50 BV
0.25 BV
RL = 100Ω
VGE = 10V
VCC = BV
CES
CES
CES
IG (REF)
80
I
G
CES
(ACT)
f
= 0.05/t
MAX1
f
= (PD - PC)/W
MAX2
D(OFF)
OFF
2N6977
2N6978
R
L
L = 50µH
1/R
= 1/R
G
+ 1/R
GEN
R
GEN
= 100Ω
GE
V
CC
300V
20V
0V
RGE = 100Ω
FIGURE 10. INDUCTIVE SWITCHING TEST CIRCUIT
3-4
+
-
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