Page 1
NPN − 2N6515, 2N6517;
PNP − 2N6520
High Voltage Transistors
NPN and PNP
Features
• Voltage and Current are Negative for PNP Transistors
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter V oltage
2N6515
2N6517, 2N6520
Collector − Base Voltage
2N6515
2N6517, 2N6520
Emitter − Base Voltage
2N6515, 2N6517
2N6520
Base Current I
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R
Thermal Resistance, Junction−to−Case R
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
V
CEO
V
CBO
V
EBO
P
P
TJ, T
B
C
D
D
−55 to +150 °C
stg
q
JA
q
JC
250
350
250
350
6.0
5.0
250 mAdc
500 mAdc
625
5.0
1.5
12
200 °C/W
83.3 °C/W
Vdc
Vdc
Vdc
mW
mW/°C
W
mW/°C
2
BASE
TO−92
CASE 29
STYLE 1
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COLLECTOR
3
NPN
1
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
2N
65xx
AYWWG
G
2
BASE
COLLECTOR
3
1
EMITTER
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
PNP
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
1 Publication Order Number:
xx = 15, 17, or 20
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
2N6515/D
Page 2
NPN − 2N6515, 2N6517; PNP − 2N6520
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0) 2N6515
2N6517, 2N6520
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 ) 2N6515
2N6517, 2N6520
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) 2N6515, 2N6517
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0) 2N6515
(VCB = 250 Vdc, IE = 0) 2N6517, 2N6520
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0) 2N6515, 2N6517
(VEB = 4.0 Vdc, IC = 0) 2N6520
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
2N6520
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
250
350
250
350
6.0
5.0
−
−
−
−
35
20
50
30
−
Vdc
−
Vdc
−
−
Vdc
−
−
nAdc
50
50
nAdc
50
50
−
−
−
−
−
(IC = 30 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
(IC = 100 mAdc, VCE = 10 Vdc) 2N6515
2N6517, 2N6520
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
Base−Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517
SWITCHING CHARACTERISTICS
Turn−On Time
(VCC = 100 Vdc, V
= 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
BE(off)
Turn−Off Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N6520
V
CE(sat)
V
BE(sat)
V
BE(on)
C
C
50
30
45
20
25
15
300
200
220
200
−
−
Vdc
−
−
−
−
0.30
0.35
0.50
1.0
Vdc
−
−
−
0.75
0.85
0.90
− 2.0 Vdc
f
T
cb
eb
t
on
t
off
40 200 MHz
− 6.0 pF
pF
−
−
80
100
− 200 ms
− 3.5 ms
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2
Page 3
NPN − 2N6515, 2N6517; PNP − 2N6520
200
VCE = 10 V
TJ = 125°C
200
VCE = 10 V
100
70
50
30
, DC CURRENT GAIN
FE
h
20
, DC CURRENT GAIN
FE
h
TJ = 125°C
25°C
−55°C
100
25°C
70
50
30
20
IC, COLLECTOR CURRENT (mA)
−55°C
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
Figure 1. DC Current Gain
NPN 2N6515
200
VCE = −10 V
100
70
50
30
, DC CURRENT GAIN
FE
h
20
TJ = 125°C
25°C
−55°C
10
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
NPN 2N6517
100
70
50
30
20
10
T
f, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
IC, COLLECTOR CURRENT (mA)
TJ = 25°C
VCE = 20 V
f = 20 MHz
Figure 4. Current−Gain − Bandwidth Product
NPN 2N6515, 2N6517
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
PNP 2N6520
100
70
50
30
20
10
T
f, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
IC, COLLECTOR CURRENT (mA)
Figure 5. Current−Gain − Bandwidth Product
PNP 2N6520
−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70
TJ = 25°C
VCE = −20 V
f = 20 MHz
−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70
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3
Page 4
NPN − 2N6515, 2N6517; PNP − 2N6520
V, VOLTAGE (VOLTS)
, TEMPERATURE COEFFICIENTS (mV/ C)°
V
θ
R
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2.5
2.0
1.5
1.0
0.5
−0.5
−1.0
−1.5
−2.0
−2.5
−1.4
TJ = 25°C
−1.2
TJ = 25°C
−1.0
V
@ IC/IB = 10
BE(sat)
V
@ VCE = −10 V
BE(on)
V
@ IC/IB = 10
CE(sat)
, COLLECTOR CURRENT (mA)
I
C
Figure 7. “On” Voltages
PNP 2N6520
V
CE(sat)
@ IC/IB = 5.0
−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70
V, VOLTAGE (VOLTS)
−0.8
−0.6
−0.4
−0.2
0
V
@ IC/IB = 10
BE(sat)
V
@ VCE = 10 V
BE(on)
V
@ IC/IB = 10
CE(sat)
V
@ IC/IB = 5.0
0
CE(sat)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
IC, COLLECTOR CURRENT (mA)
Figure 6. “On” Voltages
NPN 2N6515, 2N6517
2.5
I
C
+ 10
I
B
25°C to 125°C
R
for V
q
VC
0
CE(sat)
−55°C to
25°C
2.0
1.5
1.0
0.5
0
−0.5
I
C
+ 10
I
B
25°C to 125°C
R
for V
q
VB
BE
−55°C to
25°C
−1.0
−55°C to 125°C
R
for V
q
VB
BE
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
IC, COLLECTOR CURRENT (mA)
−1.5
R
for V
q
VC
, TEMPERATURE COEFFICIENTS (mV/ C)°
−2.0
V
θ
R
−2.5
CE(sat)
−55°C to 125°C
−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70
IC, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
100
7.0
5.0
3.0
2.0
1.0
Figure 8. Temperature Coefficients
NPN 2N6515, 2N6517
Figure 9. Temperature Coefficients
PNP 2N6520
100
C, CAPACITANCE (pF)
7.0
5.0
3.0
70
50
C
eb
TJ = 25°C
30
20
10
C
cb
70
50
C
30
eb
TJ = 25°C
20
10
C
cb
2.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Capacitance
NPN 2N6515, 2N6517
1.0
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −10
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
PNP 2N6520
−20
0
0
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4
Page 5
NPN − 2N6515, 2N6517; PNP − 2N6520
1.0k
700
500
300
200
100
70
t, TIME (ns)
50
30
20
10
10k
7.0k
5.0k
3.0k
2.0k
1.0k
700
t, TIME (ns)
500
300
200
100
td @ V
t
r
BE(off)
= 2.0 V
IC, COLLECTOR CURRENT (mA)
Figure 12. Turn−On Time
NPN 2N6515, 2N6517
t
s
V
CE(off)
t
f
IC, COLLECTOR CURRENT (mA)
IC/IB = 5.0
IB1 = I
TJ = 25°C
V
CE(off)
IC/IB = 5.0
TJ = 25°C
= 100 V
B2
= 100 V
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
1.0k
700
500
300
200
100
70
t, TIME (ns)
50
30
20
10
2.0k
1.0k
700
500
300
200
100
70
50
30
20
t
r
td @ V
BE(off)
= 2.0 V
IC, COLLECTOR CURRENT (mA)
Figure 13. Turn−On Time
PNP 2N6520
t
s
t
f
IC, COLLECTOR CURRENT (mA)
V
CE(off)
IC/IB = 5.0
IB1 = I
TJ = 25°C
V
= −100 V
CE(off)
IC/IB = 5.0
TJ = 25°C
= −100 V
B2
−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70
−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70
Figure 14. Turn−Off Time
NPN 2N6515, 2N6517
+10.8 V
−9.2 V
PULSE WIDTH ≈ 100 ms
tr, tf ≤ 5.0 ns
DUTY CYCLE ≤ 1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
Figure 15. Turn−Off Time
+V
CC
VCC ADJUSTED
FOR V
CE(off)
= 100 V
2.2 k
1.0 k
1/2MSD7000
APPROXIMATELY
−1.35 V
(ADJUST FOR V
Figure 16. Switching Time Test Circuit
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5
PNP 2N6520
20 k
50 W SAMPLING SCOPE
50
= 2.0 V)
(BE)off
Page 6
1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
RESISTANCE (NORMALIZED)
0.02
0.05
SINGLE PULSE
SINGLE PULSE
NPN − 2N6515, 2N6517; PNP − 2N6520
Z
Z
q
q
JC(t)
JA(t)
= r(t) • R
= r(t) • R
T
q
JC
T
q
JA
J(pk)
J(pk)
− TC = P
− TA = P
(pk)
(pk)
Z
q
JC(t)
Z
q
JA(t)
0.01
t, TIME (ms)
Figure 17. Thermal Response
500
200
100
50
TA = 25°C
T
C
= 25°C
100 ms
100 ms
1.0 ms
20
10
5.0
, COLLECTOR CURRENT (mA)
C
I
2.0
1.0
0.5
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25°C)
SECOND BREAKDOWN LIMIT
CURVES APPLY
BELOW RATED V
CEO
2N6515
2N6517, 2N6520
0.5 1.0 2.0 5.0 10 20 50 100 200 500
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10 ms
FIGURE A
t
P
P
P
t
1
1/f
DUTYCYCLE + t1f +
PEAK PULSE POWER = P
Figure 18. Active Region Safe Operating Area Design Note: Use of Transient Thermal
Resistance Data
10k0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k
P
P
t
1
t
P
P
ORDERING INFORMATION
Device Package Shipping
2N6515RLRMG TO−92
2000 Ammo Pack
(Pb−Free)
2N6517G TO−92
5000 Unit / Bulk
(Pb−Free)
2N6517RLRPG TO−92
2000 Ammo Pack
(Pb−Free)
2N6520RLRAG TO−92
2000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
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6
Page 7
NPN − 2N6515, 2N6517; PNP − 2N6520
TO−92 (TO−226)
PACKAGE DIMENSIONS
CASE 29−11
ISSUE AM
SEATING
PLANE
R
T
SEATING
PLANE
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
K
XX
H
V
1
G
C
N
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
MILLIMETERSINCHES
N
A
B
P
K
XX
G
V
1
C
N
BENT LEAD
TAPE & REEL
AMMO PACK
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 −−−
N 2.04 2.66
P 1.50 4.00
R 2.93 −−−
V 3.43 −−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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7
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