Datasheet 2N6509G Specification

2N6504 Series

Pb

Thyristors

Surface Mount – 50 - 800V > 2N6504 Series

Description

Designed primarily for half-wave ac control applications,
such as motor controls, heating controls and power supply
crowbar circuits.

Features

• Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 Volts

Pin Out

• 300 A Surge Current Capability

• Pb−Free Package is Available

Functional Diagram

CASE 221A

STYLE 4

1

2

Additional Information

Datasheet

Resources

Samples

Specifications are subject to change without notice.

© 2017 Littelfuse, Inc.

Revised: 08/30/17

Thyristors

Surface Mount – 50 - 800V > 2N6504 Series

Maximum Ratings (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, T

= 25 to 125°C)

J

2N6504

2N6505

2N6507

2N6508

2N6509

,

V

DRM

V

RRM

50

100

400

V

600

800

On-State RMS Current (180° Conduction Angles; T

Average On-State Current (180° Conduction Angles; T

Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T

= 100°C)

J

Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, T

Forward Average Gate Power (t = 8.3 ms, T

= 85°C) P

C

Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, T

Operating Junction Temperature Range

Storage Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.

Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. V

and V

DRM

potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative

RRM

= 85°C) I

C

= 85°C) I

C

= 85°C) P

C

= 85°C) I

C

T (RMS)

T (AV)

I

TSM

GM

G(AV)

GM

T

J

T

stg

25 A

16 A

250 A²s

20 W

0.5 W

2.0 A

-40 to +125 °C

-40 to +125 °C

Thermal Characteristics

Rating Symbol Value Unit

*Thermal Resistance, Junction to Case

*Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds

* Indicates JEDEC Registered Data..

R

8JC

T

L

Specifications are subject to change without notice.

1. 5

260 °C

© 2017 Littelfuse, Inc.

Revised: 08/30/17

°C/W

Thyristors

Surface Mount – 50 - 800V > 2N6504 Series

Electrical Characteristics - OFF (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

†Peak Repetitive Blocking Current TJ = 25°C
(V

= V

= V

AK

DRM

T

Electrical Characteristics - ON (T

; Gate Open)

RRM

= 25°C unless otherwise noted; Electricals apply in both directions)

C

= 125°C

J

I

DRM

I

RRM

Characteristic Symbol Min Typ Max Unit

* Forward On-State Voltage (Note 2) (ITM = 50 A) V

* Gate Trigger Current (Continuous dc) T

(VAK = Rated V

* Gate Trigger Voltage (Continuous dc) (V

Gate Non-Trigger Voltage (V

*Holding Current (V

or V

DRM

, Gate Open)

RRM

= 12 Vdc, RL = 100 Ω, TC = -40 °C)

AK

= 12 Vdc, RL = 100 Ω, TJ = 125°C)

AK

= 12 Vdc, TC = 25°C

D

Initiating Current = 200 mA, Gate Open)

= 25°C

C

TC = -40 °C

TC = -40 °C

,

- - 1. 0

µA

- - 2.0 mA

TM

− − 1. 8 V

− 9.0 30

I

GT

mA

− − 75

V

GT

V

GD

− 1. 0 1. 5 V

0.2 − − V

− 18 40

I

H

mA

− − 80

* Turn-On Time (I

Turn-Off Time (V

= 25 A, IGT = 50 mAdc) t

TM

= rated voltage) (ITM = 25 A, IR = 25 A)

RM

(ITM = 25 A, IR = 25 A, TJ = 125°C)

*Indicates JEDEC Registered Data

2. Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.

Dynamic Characteristics

Characteristic Symbol Min Typ Max Unit

Critical Rate of Rise of Off‐State Voltage (Gate Open, Rated VDRM,
Exponential Waveform)

gt

− 1. 5 2.0 µs

- - 15

t

q

- - 35

dv/dt(c) − 50 −

µs

V/µs

Specifications are subject to change without notice.

© 2017 Littelfuse, Inc.

Revised: 08/30/17

Thyristors

Surface Mount – 50 - 800V > 2N6504 Series

Voltage Current Characteristic of SCR

Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

Peak Repetitive Forward Off State Voltage

Peak Forward Blocking Current

Peak Repetitive Reverse Off State Voltage

Peak Reverse Blocking Current

Maximum On State Voltage

Holding Current

I

I

I

Figure 1. AverageCurrent Derating Figure 2. Maximum On-State Power Dissipation

Specifications are subject to change without notice.

© 2017 Littelfuse, Inc.

Revised: 08/30/17

Thyristors

Surface Mount – 50 - 800V > 2N6504 Series

Figure 4. Maximum Non−Repetitive Surge CurrentFigure 3. Typical On−State Characteristics

Figure 5. Thermal Response

Specifications are subject to change without notice.

© 2017 Littelfuse, Inc.

Revised: 08/30/17

Thyristors

Surface Mount – 50 - 800V > 2N6504 Series

Typical Trigger Characteristics

Figure 6. Typical Gate Trigger Current vs. Junction Temperature

Figure 8. Typical Holding Current vs.Junction Temperature

Figure 7. Typical Gate Trigger Voltage vs. Junction Temperature

Ordering Information

Device Package Shipping

2N6504

2N6504G

2N6505

2N6505G

2N6505T

2N6505TG

2N6507

2N6507G

2N6507T TO-220AB

2N6507TG

2N6508 TO-220AB

2N6508G

2N6508TG TO-220AB

2N6509

2N6509G TO-220AB

2N6509T

2N6509TG TO-220AB

TO-220AB

TO-220AB

(Pb-Free)

TO-220AB

TO-220AB

(Pb-Free)

TO-220AB

TO-220AB

(Pb-Free)

TO-220AB

TO-220AB

(Pb-Free)

TO-220AB

(Pb-Free)

TO-220AB

(Pb-Free)

TO-220AB

(Pb-Free)

TO-220AB

(Pb-Free)

500 Units / Box

50 Units / Box

500 Units / Box

50 Units / Box

500 Units / Box

50 Units / Box

500 Units / Box

50 Units / Box

Specifications are subject to change without notice.

© 2017 Littelfuse, Inc.

Revised: 08/30/17

Thyristors

Surface Mount – 50 - 800V > 2N6504 Series

Dimensions Part Marking System

SEATING
PLANE

FB

12 3

4

A

K

Q

H

Z

T

U

C

S

1

2

TO-220AB

CASE 221A

STYLE 3

L

V

G

D

N

Inches Millimeters

Dim

Min Max Min Max

A 0.570 0.620 14.48 15.75

B 0.380 0.405 9.66 10.28

C 0.160 0.190 4.07 4.82

D

0.025 0.035 0.64 0.88

F 0.142 0.147 3.61 3.73

G 0.095 0.105 2.42 2.66

H 0 .110 0.155 2.80 3.93

J 0.014 0.022 0.36 0.55

K 0.500 0.562 12.70 14.27

L 0.045 0.060 1.1 5 1.52

N 0.190 0.210 4.83 5.33

Q 0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79

S 0.045 0.055 1. 1 5 1.39

T 0.235 0.255 5.97 6.47

U 0.000 0.050 0.00 1.27

V 0.045 −−− 1. 15 −−−

Z −−− 0.080 −−− 2.04

R

J

Pin Assignment

1 Cathode

2 Anode

3 Gate

4 Anode

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD
IRREGULARITIES ARE ALLOWED.

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics.

Specifications are subject to change without notice.

© 2017 Littelfuse, Inc.

Revised: 08/30/17