Datasheet 2N5401-D Datasheet (ON Semiconductor)

2N5401

Preferred Device

Amplifier Transistors

PNP Silicon

Features

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter V oltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C

Derate above 25°C
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Operating and Storage Junction

Temperature Range

CEO
CBO
EBO

P

P

TJ, T

C

D

D

stg

150 Vdc
160 Vdc

5.0 Vdc
600 mAdc
625

5.0

1.5

12

−55 to +150 °C

mW

mW/°C

W

mW/°C

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COLLECTOR

3

2

BASE

1

EMITTER

TO−92
CASE 29
STYLE 1

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient R
Thermal Resistance, Junction−to−Case R

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

q

JA

q

JC

200 °C/W

83.3 °C/W

1

2

3

STRAIGHT LEAD

BULK PACK

1

2

3

BENT LEAD

TAPE & REEL

AMMO PACK

MARKING DIAGRAM

2N

5401

AYWWG

G

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 2

1 Publication Order Number:

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

ORDERING INFORMATION

2N5401/D

2N5401

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

Base−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Noise Figure

(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

h

V

CE(sat)

V

BE(sat)

f

C

obo

h

NF

FE

150 −

Vdc

160

Vdc

−
Vdc

5.0 −

−

−

50
50

nAdc

− 50

−
50
60
50

−

240

−
Vdc

−

−

0.2

0.5
Vdc

−

−

T

100 300

1.0

1.0

MHz

pF

− 6.0

fe

40 200

−

dB

− 8.0

ORDERING INFORMATION

Device Package Shipping

2N5401G TO−92

5000 Unit / Bulk

(Pb−Free)

2N5401RLRAG TO−92

2000 Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

http://onsemi.com

2

200

150

TJ = 125°C

100

70

50

FE

h , CURRENT GAIN

−55°C

30

20

0.1

1.0

0.9

0.8

0.7

0.6

0.5

IC = 1.0 mA 10 mA 30 mA 100 mA

0.4

0.3

0.2

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.1

CE

V

0

0.005 0.01 0.02 0.05

25°C

2N5401

VCE = − 1.0 V
VCE = − 5.0 V

0.5 2.0 3.0 100.2 0.3

1.0 5.0

20 30 50 100

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

0.1 0.5 2.0 100.2 1.0 5.0 20 50

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

3

10

VCE = 30 V

2

10

IC = I

1

10

CES

TJ = 125°C

0

10

−1

10

, COLLECTOR CURRENT (A)μI

−2

C

10

−3

10

75°C

REVERSE FORWARD

25°C

0.10.3 0.2

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

VBE, BASE−EMITTER VOLTAGE (VOLTS)

Figure 3. Collector Cut−Off Region

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3

2N5401

1.0
TJ = 25°C

0.9

0.8

0.7

V

BE(sat)

0.6

0.5

0.4

V, VOLTAGE (VOLTS)

0.3

0.2

0.1

0

0.1 0.2

10.2 V

V

in

tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%

@ IC/IB = 10

V

@ IC/IB = 10

CE(sat)

1.0 2.0 5.0

0.5

0.3
IC, COLLECTOR CURRENT (mA)

Figure 4. “On” Voltages

10 ms

INPUT PULSE

0.25 mF

V

in

3.0

10 20 50 100

V

BB

+8.8 V

100

R

B

5.1 k

100

1N914

3.0 k

2.5

2.0

TJ = − 55°C to 135°C

1.5

1.0

0.5

0

qVC for V

CE(sat)

−0.5

−1.0

−1.5

qVB for V

, TEMPERATURE COEFFICIENT (mV/ C)°θ

−2.0

V

BE(sat)

−2.5

30

0.1 0.2

1.0 2.0 5.0

0.5

3.0

10 20 50 1000.3

30

IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

100

70

V

CC

−30 V

R

C

V

out

50

30

20

10

7.0

5.0

C, CAPACITANCE (pF)

3.0

2.0

TJ = 25°C

C

ibo

C

obo

1000

700
500

300

200

100

70

t, TIME (ns)

50

30

20

10

0.2

Values Shown are for IC @ 10 mA

Figure 6. Switching Time Test Circuit

IC/IB = 10
TJ = 25°C

0.5

1.0 2.0 5.0

3.0

IC, COLLECTOR CURRENT (mA)

tr @ VCC = 120 V

td @ V

BE(off)

VCC = 120 V

10 200.3

tr @ VCC = 30 V

= 1.0 V

Figure 8. Turn−On Time

30 50 100 200

1.0

0.2

2000

1000

700
500

300

200

t, TIME (ns)

100

70

50

30

20

0.2

IC/IB = 10
TJ = 25°C

tf @ VCC = 30 V

0.5

0.5

1.0 2.0 5.0

0.7

3.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitances

ts @ VCC = 120 V

1.0 2.0 5.0

3.0

10 200.3

IC, COLLECTOR CURRENT (mA)

Figure 9. Turn−Off Time

7.0

tf @ VCC = 120 V

30 50 100 200

10 200.3

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4

2N5401

TO−92 (TO−226)

PACKAGE DIMENSIONS

CASE 29−11

ISSUE AM

SEATING
PLANE

R

T

SEATING
PLANE

A

B

STRAIGHT LEAD

BULK PACK

R

P

L

K

XX

V

1

G

H

C

N

D

J

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66

J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−

MILLIMETERSINCHES

N

A

B

P

K

XX

G

V

1

C

N

BENT LEAD

TAPE & REEL

AMMO PACK

D

J

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION:
MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.

MILLIMETERS

DIM MIN MAX

A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80

J 0.39 0.50
K 12.70 −−−
N 2.04 2.66
P 1.50 4.00
R 2.93 −−−
V 3.43 −−−

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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2N5401/D

5