Page 1
Discrete POWER & Signal
Technologies
2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
2N5484
2N5485
2N5486
G
S
D
TO-92
MMBF5484
MMBF5485
MMBF5486
G
SOT-23
Mark: 6B / 6M / 6H
S
D
N-Channel RF Amplifier
This device is designed primarily for electronic switching
applications such as low On Resistance analog switching.
Sourced from Process 50.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
V
GS
I
GF
TJ ,T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Drain-Gate Voltage 25 V
Gate-Source Voltage - 25 V
Forward Gate Current 10 mA
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5484 *MMBF5484
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
ã 1997 Fairchild Semiconductor Corporation
Total Devi ce Dissipation
Derate above 25°C
Ther mal Resist ance, Junction to C ase 125
Thermal Resistance, Junction to Ambient 357 556
350
2.8
225
1.8
mW
mW/°C
C/W
°
C/W
°
Page 2
(BR)
µ
)
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
N-Channel RF Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
GSS
I
GSS
V
GS(off
ON CHARACTERISTICS
I
DSS
SMALL SIGNAL CHARACTERISTICS
g
fs
Re(y
is)
g
os
Re(y
os)
Re(y
fs)
C
iss
C
rss
C
oss
NF Noise Figure
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2%
Gate-Source Breakdow n Voltage
I
= - 1.0 µA, VDS = 0
G
Gate Reverse Current VGS = - 20 V, VDS = 0
V
= - 20 V, VDS = 0, TA = 100°C
GS
Gate-Source Cutoff Voltag e VDS = 15 V, ID = 10 nA
Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0
Forward Transfer Conductance VDS = 15, V
Input Conductance VDS = 15, V
V
= 15, V
DS
= 0, f = 1.0 kHz
GS
= 0, f = 100 MHz
GS
= 0, f = 400 MHz
GS
2N5485 / 2N5486
Output Conductance VDS = 15, V
Output Conductance VDS = 15, V
V
= 15, V
DS
= 0, f = 1.0 kHz
GS
= 0, f = 100 MHz
GS
= 0, f = 400 MHz
GS
2N5485 / 2N5486
Forward Transconductance VDS = 15, V
V
= 15, V
DS
Input Capacitance VDS = 15, V
Reverse Transfer Capacitance VDS = 15, V
Output Capacitance VDS = 15, V
V
= 15 V, RG = 1.0 kΩ,
DS
= 0, f = 100 MHz
GS
= 0, f = 400 MHz
GS
= 0, f = 1.0 MHz 5.0 pF
GS
= 0, f = 1.0 MHz 1.0 pF
GS
= 0, f = 1.0 MHz 2.0 pF
GS
f = 100 MHz
V
= 15 V, RG = 1.0 kΩ,
DS
f = 400 MHz
V
= 15 V , RG = 1.0 kΩ,
DS
f = 100 MHz
V
= 15 V, RG = 1.0 kΩ,
DS
f = 400 MHz
2N5485 / 2N5486
2N5485 / 2N5486
2N5484
2N5485
2N5486
2N5484
2N5485
2N5486
2N5484
2N5485
2N5486
2N5484
2N5484
2N5485
2N5486
2N5484
2N5484
2N5485
2N5486
2N5484
2N5484
- 25 V
- 1.0
- 0.2
- 0.3
- 0.5
- 2.0
1.0
4.0
8.0
3000
3500
4000
- 3.0
- 4.0
- 6.0
5.0
10
20
6000
7000
8000
100
1000
50
60
75
75
100
2500
3000
3500
3.0
4.0
2.0
4.0
mA
mA
mA
mhos
mhos
mhos
mhos
mhos
mhos
mhos
mhos
mhos
mhos
mhos
mhos
mhos
2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
nA
A
V
V
V
dB
dB
dB
dB
Page 3
Typical Characteristics
2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
N-Channel RF Amplifier
(continued)
20
V = -4.5V
16
12
8
4
D
I - DRAIN CURRENT (mA)
0
7
6
5
4
3
2
1
0
gfs -- TRANSCONDUCTANCE (mmhos)
Transfer Characteristics
GS(OFF)
O
T = -55 C
A
O
T = +25 C
A
O
T = +125 C
A
T = -55 C
A
T = +25 C
A
T = +125 C
A
-2.5 V
V - GATE-SOURCE VOLTAGE(V)
GS
Transconductance
Characteristics
O
T = -55 C
A
-2.5 V
V - GATE-SOURCE VOLTAGE(V)
GS
O
T = +25 C
A
T = +125 C
A
O
V = 15V
DS
O
O
O
V = 15V
DS
T = -55 C
A
T = +25 C
A
T = +125 C
A
V = -4.5V
GS(OFF)
Chann el Resistance vs Temperature
1000
Ω
500
V = -1.0V
300
200
GS(OFF)
-2.5 V
-5.0V
100
50
30
20
DS
r - DRAIN ON RESISTANCE ( )
-5-4-3-2-10
10
-50 0 50 100 150
-8.0 V
V = 100mV
DS
V = 0 V
GS
°°
°
T - AMBIENT TEMPERATURE ( C)
A
°°
Common Drain-Source
Characteristics
5
4
O
O
O
-5-4-3-2-10
3
2
1
D
I -- DRAIN CURRENT (mA)
0
0 0.2 0.4 0.6 0.8 1
O
T = +25 C
A
TYP V = -5.0V
GS(OFF)
GS
V = 0V
V - DRAIN-SOURCE VOL TAGE(V)
DS
-0.5V
-1.0V
-1.5V
-2.0V
-2.5V
-3.0V
-3.5V
-4.0V
Output Conductance vs
Drain Current
O
T = +25 C
A
f = 1.0 kHz
20
10
V = 5v
DG
5
1
0.5
V = -1.5V
GS(OFF)
0.1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
gos -- OUTPUT CONDUCTANCE (u mhos)
V = -5.5V
GS(OFF)
10
20
5
15
10
15
20
V = -3.5V
GS(OFF)
I -- DRAIN CURRENT (mA)
D
5.0V
10V
15V
20V
Transconductance
Parameter Interactions
Ω
gfs, I @ V = 15 V, V = 0 PULSE
20
DS
10
r -- DRAIN "ON" RESISTANCE ( )
-
1235710
DSDSS
r @ V = 100mV, V = 0
DS
DS
V @ V = 15V, I = 1nA
GS(OFF)
V - GATE-SOURCE VOLTAGE(V)
GS
--
GS
GS
GS D
--
100
50
30
20
10
5
3
2
1
-
DSS
I -- DRAIN CURRE NT ( mA )
gfs --- TRANSCONDUCTANCE ( mmhos )
Page 4
Typical Characteristics (continued)
2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
N-Channel RF Amplifier
(continued)
Transconductance vs
Drain Current
10
V = - 1.5V
GS(OFF)
GS
5
1
0.5
0.1
gfs -- TRANSCONDUCTANCE (mmhos)
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
O
T = -55 C
A
O
T = +25 C
A
T = +125 C
O
A
V = - 5V
GS(OFF)
GS
I - DRAIN CURRENT (mA)
D
T = -55 C
A
O
T = +25 C
A
T = +125 C
A
V = 15V
DG
f = 1.0 kHz
Capacitance vs Voltage
10
rs
is
C ( C ) -- CAPACITANCE (pF)
5
C ( V = 15 V)
1
V -- GATE-SOURCE VOLTAGE(V)
GS
f = 0.1 - 1.0 MHz
C ( V = 15 V)
DS
is
C ( V = 0 V)
rs
DS
Noise Vol tage vs Frequency
V = 15V
DG
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.2 f @ f > 1.0 kHz
O
I = 0.5 mA
O
10
5
I = 3 mA
D
n
e - NOISE VOLTAGE ( nV/ Hz )
1
0.01 0.03 0.1 0.3 1 3 10 30 100
D
f -- FREQUENCY (kHz)
Noise Figure Frequency
5
V = 15V
DS
I = 5.0 mA
D
4
R = 1.0 k
g
T = +25 C
A
3
2
NF -- NOISE FIGURE (dB)
1
0
-20-15-10-50
10 20 30 50 100 200 300 500 1000
Ω
O
f -- FREQUENCY (MHz)
Power Dissipation vs
Ambient Temperature
350
300
250
SOT-23
200
150
100
50
D
P - POWER DISSIPATION (mW)
0
0 25 50 75 100 125 150
TEMPERATURE ( C)
TO-92
o
Page 5
Common Source Characteristics
2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
N-Channel RF Amplifier
(continued)
Input Ad mittance
10
V = 15V
DS
V = 0
5
GS
(CS)
1
b
iss
g
iss
iss
Y -- INPUT ADMITTANCE (mmhos)
100 200 300 500 700 1000
f -- FREQUENCY (MHz)
Forward Transadmittance
10
5
1
fss
Y -- FORW ARD TRANSFE R (mmhos)
100 200 300 500 700 1000
+g
V = 15V
DS
V = 0
GS
(CS)
fss
-b
fss
f -- FREQUENCY (MHz)
Output Admittance
1
b (x 10)
OSS
g
OSS
V = 15V
DS
V = 0
GS
(CS)
OSS
Y -- OUTPUT CONDUCTANCE (mmhos)
100 200 300 500 700 1000
f -- FREQUENCY (MHz)
Reverse Transadmittance
10
5
- b
1
V = 15V
DS
V = 0
GS
rss
(CS)
Y -- REVERSE TRANSFER (mmhos)
100 200 300 500 700 1000
rss
-g ( X 0.1)
f -- FREQUENCY (MHz)
rss
Page 6
Common Gate Characteristics
2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486
N-Channel RF Amplifier
(continued)
Input Admittance
V = 15V
DS
V = 0
GS
(CG)
10
g
igs
5
b
igs
igs
Y -- INPUT ADMITTANCE (mmhos)
1
100 200 300 500 700 1000
f -- FREQUENCY (MHz)
Forward Transadmittance
10
5
+g
fgs
-b
fgs
1
V = 15V
DS
V = 0
GS
fgs
Y -- FORWARD TRANSFER (mmhos )
100 200 300 500 700 1000
f -- FREQUENCY (MHz)
(CG)
Output Admittance
1
b (x 10)
OgS
g
Ogs
V = 15V
DS
V = 0
GS
(CG)
ogs
Y -- OUTPUT CONDUCTANCE (mmhos)
100 200 300 500 700 1000
f -- FREQUENCY (MHz)
Reverse T ransadmittance
1
V = 15V
DS
V = 0
GS
(CG)
- b
rgs
rgs
Y -- REVERSE TRANSFE R (m mhos)
100 200 300 500 700 1000
f -- FREQUENCY (MHz)
g
rgs
Page 7
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not intended to be an exhaustive list of all such trademarks.
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TM
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®
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As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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