Datasheet 2N5210 Datasheet (Fairchild)

2N5210/MMBT5210

g

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

C

B

E

TO-92

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

st

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Collector-Emitter Voltage 50 V Collector-Base Voltage 50 V Emitter-Base Voltage 4.5 V Collector Current - Continuous 100 mA Operating and Stora ge Junction Temperature Range -55 to +150

C

B

E

SOT-23

Mark: 3M

C

°

2N5210/MMBT5210

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

PD Total Device Dissipation

R

θJC

R

θJA

Derate above 25°C Thermal Resistance, Junction to Ca se 83.3

Thermal Resistance, Junction to Am bient 200 357

 2002 Fairchild Semiconductor Corporation

Characteristic

Max.

2N5210 MMBT5210

625

5.0

350

2.8

Units

mW

mW/°C

C/W

° °C/W

2N5210, Rev B

(BR)

NPN General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

CEO

V

CBO

I

CBO

I

EBO

ON CHARACTERISTICS

h

FE

V

sat

CE(

V

BE(on)

SMALL SIGNAL CHARACTERISTICS

f

T

C

cb

h

fe

NF Noise Fi gure

*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 50 V Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 50 V Collector Cutoff Current VCB = 35 V, IE = 0 50 nA Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA

DC Current Gain

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.7 V

)

I

= 100 µA, VCE = 5.0 V

C

I

= 1.0 mA, VCE = 5.0 V

C

= 10 mA, VCE = 5.0 V*

I

C

200 250 250

Base-Emitter On Voltage IC = 1.0 mA, VCE = 5.0 V 0.85 V

Current Gain - Bandwidth Product

I

= 500 µA,V

C

CE

= 5.0 V,

30 MHz

f= 20 MHz

Collector-Base Capacitance VCB = 5.0 V, I Small-Signal Current Gain IC = 1.0 mA, V

= 0, f = 100 kHz 4.0 pF

E

CE

= 5.0 V,

250 900 f = 1.0 kHz I

= 20 µA, VCE = 5.0 V,

C

R

= 22 kΩ, f = 10 Hz to 15.7 kHz

S

I

= 20 µA, VCE = 5.0 V,

C

R

= 10 kΩ, f = 1.0 kHz

S

600

2.0

3.0

dB dB

2N5210/MMBT5210

3

T ypical Characteristics

2N5210/MMBT5210

NPN General Purpose Amplifier

(continued)

T ypical Pulsed Current Gain

vs Collector Current

1200

1000

800

600

400

200

- TYPICAL PULSED CURRENT GAIN

0

FE

h

0.01 0.1 1 10 100

125 oC

25 oC

0.03

IC - COLLECTOR CURRENT (mA)

VCE = 5.0V

- 40 oC

30.3

Base-Emitter Saturation

V oltage vs Collector Current

1.0

0.8

0.6

0.4

0.2

- COLLECTOR-EMITTER VOLTAGE (V)

0.1 1 10 100

BESAT

V

IC - COLLECTOR CURRENT (mA)

- 40 oC

25 oC

125 oC

ββββ

= 10

Collector-Emitter Saturation V oltage vs Collector Current

0.30

= 10

ββββ

0.25

0.20

0.15

0.10

0.05

- BASE-EMITTER ON VOLTAGE (V)

BEON

30

0.1 1 10 100

V

IC - COLLECTOR CURRENT (mA)

125 oC

25 oC

- 40 oC

Base-Emitter ON V oltage vs

Collector Current

1.0

0.8

0.6

0.4

0.2

- BASE-EMITTER ON VOLTAGE (V)

BEON

0.1 1 10

V

- 40 oC

IC - COLLECTOR CURRENT (mA)

25 oC

125 oC

VCE = 5.0V

Co llector-C u to ff Cur re nt

vs Ambie nt Temp erature

10

V = 45V

CB

1

CBO

0.1

I - C OLLE CT O R CURRENT (nA)

25 50 75 100 125 150

T - A M BI E NT TE MP ERATURE ( C)

A

°

Typical Characteristics (continued)

0

2N5210/MMBT5210

NPN General Purpose Amplifier

(continued)

Input and Output Capacitance

vs Reverse Bias Voltage

5

4

3

C

te

2

CAPACITANCE (pF)

1

0

048121620

REVERSE BIAS VOLTAGE (V)

f = 1.0 MHz

C

ob

Normalized Collector-Cutoff Current

°

A

CHARACTERIS TIC S RELATIVE TO VALUE AT T = 25 C

1000

vs Ambient Temp er ature

100

10

1

25 50 75 100 125 150

T - AMBIENT TEMPERATURE ( C)

A

°

Contours of Constant Gain

Bandwi dt h Prod uc t (f )

10

7 5

3

2

CE

V - COLLECTOR VOLTAGE (V)

1

0.1 1 10 100

I - COLLEC TOR CURRENT (mA)

C

150 MH z

125 MH z 100 MH z

75 MHz

T

175 MH z

Wideband Noise Frequency

vs Source Resistance

5

4

3

2

1

NF - NOI S E FI GURE (d B)

0

1,000 2,000 5,000 10,000 20,000 50,000 100,000

V = 5.0 V

CE

BANDWI DT H = 1 5.7 kH z

µµµµ

I = 100

R - SOURCE RESISTANCE ( )

S

A

C

I = 30

C

I = 10

C

ΩΩΩΩ

µµµµ

A

µµµµ

A

3

Noise Figure vs Frequency

10

µµµµ

I = 200

8

6

4

2

NF - NOISE FIGURE (dB)

0

0.0001 0.001 0.01 0.1 1 10 100

R = 10 k

I = 100

C

R = 10 k

S

I = 1.0 mA,

C

R = 500

S

I = 1.0 mA,

C

R = 5.0 k

S

f - FREQU ENCY (M Hz)

A,

C

ΩΩΩΩ

S

µµµµ

A,

ΩΩΩΩ

V = 5.0V

CE

- POWER DISSIPATION (W) P

Base-Emitter Saturation

V oltage vs Collector Current

1.00

0.75

TO-92

0.50

SOT-23

0.25

D

0.00 025507510012515

TEMPERATURE (oC)

Typical Characteristics (continued)

2N5210/MMBT5210

NPN General Purpose Amplifier

(continued)

Cont ours of Co ns t a nt

Narrow Band Noise Figure

10,000

Ω

ΩΩ

Ω

5,000

2,000

1,000

500

V = 5. 0 V

CE

f = 100 Hz BANDWIDTH

200

= 20 Hz

S

R - SOURC E RESISTANCE ( )

100

1 10 100 1,000

I - COLLEC TOR CURRENT ( A)

C

3.0 dB

4.0 dB

6.0 dB

8.0 dB 10 dB

12 dB 14 dB

Contours of Constant

Nar r ow Band No is e Figure

10000

Ω

ΩΩ

Ω

5000

2000 1000

500

V = 5.0V

CE

f = 10kHz

200

BANDWIDTH

S

= 2.0kHz

R - SOURCE RESISTANCE ( )

100

1 10 100 1000

I - COLL ECTO R CURR ENT ( A)

C

1.0 dB

2.0 dB

µµµµ

3.0 dB

4.0 dB

6.0 dB

8.0 dB

Contours of Consta n t

Narrow Band Noise Figure

10,000

Ω

ΩΩ

Ω

5,000

2,000

1,000

500

V = 5.0 V

CE

f = 1.0 kHz BANDWIDTH

200

= 200 Hz

S

R - SOURCE RESISTANC E ( )

100

1 10 100 1,000

I - COLLECTOR CURRENT ( A)

C

2.0 dB

3.0 dB

4.0 dB

6.0 dB

8.0 dB

Contours of Constant

Nar row B and No ise Fi gure

10000

Ω

ΩΩ

Ω

5000

2000 1000

V =

CE

500

5.0V f = 1.0 MHz

200

BANDW IDTH

S

= 200kHz

R - SOURCE RESISTANCE ( )

100

0.01 0.1 1 10

I - COLLEC TO R CU RRENT ( A)

C

2.0 dB

3.0 dB

4.0 dB

8.0 dB

µµµµ

7.0 dB

µµµµ

5.0 dB

6.0 dB

NPN General Purpose Amplifier

Typical Common Emitter Characteristics (f = 1.0 kHz)

2N5210/MMBT5210

(continued)

Typical C o mmo n Emi tter Char acteri stics

1.4

CE

1.3

h

oe

1.2

1.1

h

re

1

h

ie

0.9

h

fe

0.8

CH AR AC TER IST I CS RELATI VE TO VALU E( V =5 V)

0 5 10 15 20 25

V - COLLECTOR VOLTAGE (V)

CE

h

fe

h

ie

h

re

h

oe

I = 1.0mA

C

f = 1. 0kHz T = 25 C

°

A

Typ ical Common Emitter Characteristics

100

C

f = 1.0kHz

10

h and h

re

ie

h

oe

1

h

fe

0.1

Typic al Common E mitter Characteristics

°

1.5

A

1.4

V = 5.0V

CE

1.3

f = 1.0kHz I = 1 .0mA

1.2

C

1.1 1

0.9

h

0.8

0.7

0.6

0.5

CHARACTE RISTICS REL ATIV E TO VALUE (T =25 C)

h

ie

oe

h

fe

h

ie

re

-100 -50 0 50 100 150

T - JU NC TIO N T E MP ERATURE ( C)

J

oe

h

re

h

fe

h

ie

h

re

h

fe

h

oe

°

3

0.01

CHARACTERISTICS RELATIVE TO VALUE (I =1mA)

0.1 0.2 0.5 1 2 5 10 20 50 100

I - COLLEC TOR CUR RE NT (mA)

C

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Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4