Conexant RF210A, RF210B Datasheet

not

Do

use for new designs. Use the RF212 device instead

(Data Sheet No. 100780)

RF210A and RF210B

Dual-Band, Image-Reject Downconverters For GSM Applications

The RF210A and RF210B devices are available as a dual-band front end for Global
System for Mobile Communications (GSM) handset applications. Both of these
highly integrated, monolithic devices are optimized for dual-band use in
GSM900/DCS1800 or GSM 900/PCS1900 applications. The devices include two
Low Noise Amplifiers (LNAs), two image-reject mixers, and two Local Oscillator
(LO) buffer amplifiers.

The main advantage of the RF210A and RF210B is their ability to provide 30 dB of
image rejection for both the GSM900 and the DCS1800 (or PCS1900) bands
without requiring the use of a post-LNA image reject filter. A block diagram of the
RF210(A/B) is shown in Figure 1. The device package and pin configuration are
shown in Figure 2.

LNA900GND

BIASGND

LNA900IN

0

90

90

IFOUT

Features

• LNA/image-reject mixer for RF to IF conversion

• 10 dB (RF210A) or 20 dB (RF210B) switchable

gain for GSM

• 8 dB (RF210A) or 16 dB (RF210B) switchable gain
for DCS/PCS

• 30 dB of image rejection. No post-LNA filtering
required

• High isolation LO input buffer

• Differential IF output

• High dynamic range

• Three-cell battery operation (2.7 to 5 V)

• 20-pin Thin Shrink Small Outline Package

(TSSOP)

Applications

• Dual-band digital cellular mobile telephony
(GSM900/DCS 1800 or GSM900/PCS1900)

NC

1

2

3

20

19

18

MIXVCC

MIXGND

BYP900

GAINSEL

LNA1800IN

BANDSEL

Data Sheet

IRM

0

90

BIAS

BYP900

BYP1800

Figure 1. RF210(A/B) Block Diagram

Proprietary Information and Specifications are Subject to Change October 20, 1999

LOIN

C069

Conexant

LNA900IN

BIASVCC

LNAVCC

GAINSEL

LNA1800IN

LNA1800GND

ENA

4
5

6

7
8

9

10

Figure 2. RF210(A/B) Pin Configuration – 20-Pin TSSOP

IFOUT+

17

IFOUT-

16

BYP1800

15

BANDSEL

14

LOIN

13

LOGND

12

ADJMIX

11

C067

Doc. No. 100775A

RF210(A/B) Image-Reject Downconverter

Technical Description

The RF210(A/B) dual-band, image-reject downconverters
implement the front-end functions of a dual-band super­heterodyne receiver. These devices consist of two receive
paths, one for GSM900 and the other for DCS1800 (or
PCS1900). Each receive path contains an LNA and an image­reject mixer. The IF and LO ports are common to both receive
paths. The image-reject mixers can provide 30 dB of image
rejection for both the GSM900 and the DCS1800 (or PCS1900)
bands without using any post-LNA image reject filters.

The LNA/mixer combination has a switchable gain. The RF210A
and RF210B both have 22 dB of gain in the high gain mode. For
the RF210A, the gain is reduced by 10 dB (GSM band) and by
8 dB (DCS/PCS band) in the low gain mode. For the RF210B,
the gain is reduced by 20 dB (GSM band) and by 16 dB
(DCS/PCS band) in the low gain mode. The gain mode is
selected using the GAINSEL pin (Pin 7). Low gain mode is
selected by driving the GAINSEL signal high; high gain mode is
selected by driving the signal low. In addition, small adjustments

Table 1. RF210(A/B) Signal Description

of the mixer gain can be accomplished by varying the quiescent
current on the ADJMIX pin (Pin 11). This pin can be connected
to VCC or ground through resistors. The current will increase if
the pin is connected to GND and decrease if connected to VCC.
For optimal performance, this pin should be left unconnected.

The band of operation for RF210(A/B) is selected by the
BANDSEL signal on Pin 14. It switches the receive path
between GSM900 and DCS1800 (or PCS1900) bands.

The device can operate from a three-cell battery pack (2.7 V to

5.0 V). Standby mode current is extremely low at 20 µA, which
maximizes handset standby time.

The signal pin assignments and functional pin descriptions are
found in Table 1. The absolute maximum ratings of the
RF210(A/B) are provided in Table 2, the operating conditions
are specified in Table 3, and electrical specifications are
provided in Table 4. Figure 3 shows the diagram for a typical
application circuit using the RF210(A/B) downconverter. Figure
4 provides the package dimensions for the 20-pin TSSOP
device and Figure 5 provides the tape and reel dimensions.

Pin # Name Description Pin # Name Description

1 NC No connect 11 ADJMIX Mixer bias adjust pin
2 LNA900GND 900 MHz LNA ground 12 LOGND LO input ground

3 BIASGND Bias ground 13 LOIN LO input
4 LNA900IN 900 MHz LNA input 14 BANDSEL Band selection pin
5 BIASVCC Bias supply 15 BYP1800 Bypass capacitor for 1800 MHz band
6 LNAVCC LNA supply 16 IFOUT– Mixer output (negative)
7 GAINSEL LNA gain select 17 IFOUT+ Mixer output (positive)
8 LNA1800IN 1800 MHz LNA input 18 BYP900 Bypass capacitor for 900 MHz band
9 LNA1800GND 1800 MHz LNA ground 19 MIXGND Mixer ground

10 ENA Device enable (active high) 20 MIXVCC Mixer supply

Table 2. Absolute Maximum Ratings

Parameter Minimum Maximum Units

Storage Temperature –40 +125 °C
LNA Input Power +5 dBm
Supply Voltage (VCC) –0.3 +6 V
Input Voltage Range –0.3 Vcc V

2
October 20, 1999 Proprietary Information and Specifications are Subject to Change

Conexant

100775A

Image-Reject Downconverter RF210(A/B)

Table 3. RF210(A/B) Recommended Operating Conditions

Parameter Min Typical Max Units

Supply Voltage 2.7 3.0 5.0 V
Operating Temperature –30 +25 +85

°

C

Table 4. RF210(A/B) Electrical Specifications (1 of 2)

A

(T

= 25 C, Vcc = 3.0 V,

IF

f

= 400 MHz,

Plo

= –10 dBm)

Parameter Test Condition Min Typical Max Units

GSM900 Mode, BANDSEL = 0

Supply current:

Enable mode

Sleep mode
RF Input frequency 935 960 MHz
IF frequency 350 400 450 MHz
LO frequency 1285 1410 MHz
LO input power –10 dBm
LO to RF input isolation 30 dB
Input impedance LNA900IN = 950 MHz 40 – j50
Gain:

High gain (RF210A and RF210B)

Low gain (10 dB attenuation, RF210A)

Low gain (20 dB attenuation, RF210B)

Gain variation vs. Frequency

Gain step tracking error
Noise figure:

High gain

Low gain (12 dB gain, RF210A)

Low gain (2 dB gain, RF210B)

High gain (Note 1)

Input 1 dB compression point –25 dBm
Input third order i ntercept point –17 dBm
IF shunt resis tance/side 400 500 600
Spurious response:

2(RF) x 2(LO) and 3(RF) x 3(LO)

(Note 2):
Image rejection 35 dB

ENA = 1
ENA = 0

GAINSEL = 0
GAINSEL = 1
GAINSEL = 1

No blocker,
GAINSEL = 0
GAINSEL = 1
GAINSEL = 1
–28 dBm blocker @ 915
MHz, GAINSEL = 0

Interferer input = –75 dBm –45 dB

38

22
12

2

0.5 1

3.3

9.0
17

3.9

10

0.5

3.9
11
19

mA

µ

dB
dB
dB
dB
dB

dB
dB
dB
dB

Ω

Ω

A

100775A

Conexant

Proprietary Information and Specifications are Subject to Change October 20, 1999

3