CENTR CXTA27 Datasheet

MAXIMUM RATINGS (TA=25°C)

SYMBOL UNITS

Collector-Emitter Voltage V

CES

60 V

Emitter-Base Voltage V

EBO

10 V

Collector Current I

C

500 mA

Power Dissipation P

D

1.2 W

Operating and Storage

Junction Temperature TJ,T

stg

-65 to +150 °C

Thermal Resistance Θ

JA

104 °C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS

I

CBO

VCB=50V 100 nA

I

CES

VCE=50V 500 nA

I

EBO

VEB=10V 100 nA

BV

CBO

I

C

=100µA60V

BV

CES

I

C

=100µA60V

V

CE(SAT)

IC=100mA, IB=0.1mA 1.5 V

V

BE(ON)

VCE=5.0V, IC=100mA 2.0 V

h

FE

VCE=5.0V, IC=10mA 10,000

h

FE

VCE=5.0V, IC=100mA 10,000

f

T

VCE=50V, IC=10mA, f=100MHz 125 MHz

CXTA27

SURFACE MOUNT

NPN DARLINGTON TRANSISTOR

SOT-89 CASE

Central

Semiconductor Corp.

TM

R1 ( 19-December 2001)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXTA27 type
is a NPN Silicon Darlington Transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for applications
requiring extremely high gain.

Central

Semiconductor Corp.

TM

SOT-89 CASE - MECHANICAL OUTLINE

CXTA27

SURFACE MOUNT

NPN DARLINGTON TRANSISTOR

R1 ( 19-December 2001)

LEAD CODE:

1) EMITTER

2) COLLECTOR

3) BASE

BOTTOM VIEW

B

A

E

C

F

H

1

J

G

2

K

L

M

3

R3