BenQ D72 Service Manual

BenQ Rev 1.0
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BenQ March (D72)/Amethyst
LT Mobile Phone
Service Manual
BenQ Inc.
Wireless Business Unit
Customer Service Dep. Tel : +886-(0)2-2799-8800 ext 6687 E-Mail : Roychen@acercm.com.tw
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Contents
l Preface…………………………………………………..……………1 l Theory of Operation
1.GSM system Description…………………………………………7
2.Baseband function description…………………………………12
3.Radio Frequency function description ………………………..44
l Download
1.System requirements and setup ………………………………59
2.Function descriptions……………………………………………61
3.FAQ… ……………….……………….……………………………67
l Disassembly (Level1~Level2)………….………………………….69 l Troubleshooting
Level 1~level 2 repair………………………………………………73 Level 3~level 4 repair………………………………………………74 l Replacement parts
Exploded View (fig1~fig3)………………………………………….95 Spare parts list………………………………………………….…..98
l Service Manual Feedback Form……..…………………………….99
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Preface
This service manual is for the customers who purchase of Acer
March handset . It has several main parts of our handset that include hardware/software and simple disassembly/assembly procedure introduction. If you don’t understand some of these sections or any query about it please kindly use our service manual feedback form and send it back to our Customer Service Department and we’ll response your query as soon as possible.
Specifications
Table 1: Radio Frequency
Radio Frequency (900 MHz)
Frequency Range TX 880-915 MHz; RX 925-
960
MHz Channel Spacing 200 KHz Number of Channels 174 Carriers x 8 (TDMA) Modulation GMSK Duplex Spacing 45 MHz Frequency Stability +/- 0.1 ppm (Uplink TX) Power Output 33 dBM Class 4 (2 W peak) Receiver Level < -102 dBm (Wireless)
Radio Frequency (1800 MHz)
Frequency Range TX 1710-1785 MHz; RX
1805-1880 MHz Channel Spacing 200 KHz Number of Channels 374 Carriers x 8 (TDMA) Modulation GMSK Duplex Spacing 95 MHz Frequency Stability +/- 0.1 ppm (Uplink TX) Power Output 30 dBM – 0 dBM Receiver Level < -102 dBm (Wireless)
Operating Temperature Range -10 to +55 °C
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Table 2: Voltage Operation
Voltage Operation
Li-ion Battery DC 3.3-4.2 V Ni-MH Battery DC 3.3-4.2 V
Table 3: Power Consumption
Power Consumption
Working Current Average < 270 mAH Standby Current 6 +/-0.2 mAH Talking Time* 120 ~300 min (With Ni-
MH 550
mAH)
Standby Time* 50~120 hours (With Ni-
MH 550
mAH)
DTX / DTR Yes
Table 4: Appearance
Handset Appearance
Dimensions 106 x 40 x 16 mm Volume 68 c.c. Handset Weight 99 g
Table 5: Basic Services
Telephony (Speech)
Tele Service
Emergency Call
Delivery Report
Short Message Service MT/MO
Short Message Service
Cell Broadcast
Bearer Service
Data circuit duplex
asynchronous up to 14400
bit/sec
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Scope of Manual
This manual is intended for use by experienced technicians familiar with similar types of equipment. It is intended primarily to support electrical and mechanical repairs. Repairs not covered in the scope of this manual should be forwarded to Motorola’s regional Cellular Subscriber Support Centers.
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Theory of Operation
GSM System Description
General Cellular Concept
The cellular systems are used to provide radiotelephone service in the frequency range 890-960 MHz. A cellular system provides higher call handling capacity and system availability than would be possible with conventional radiotelephone systems (those which require total system area coverage on every operating channel) by dividing the system coverage area into several adjoining sub-areas or cells.
Each cell contains a base station (cell site) which provides transmitting and receiving facilities, for an allocated set of duplex frequency pairs (channels). Since each cell is a relatively small area, both the cell site and the radiotelephone that it supports can operate at lower power levels than would be used in conventional systems.
Using this technique, radiation on a given channel is virtually contained in the cell operating on that channel and, to some extent, those cells directly adjacent to that cell.
Since the coverage area of a cell on a given channel is limited to a small area (relative to the total system coverage area), a channel may be reused in another cell outside the coverage area of the first. By this means, several subscribers may operate within the same geographic area, without interference with each other, on a single channel.
GSM Description
Unlike previous cellular systems, GSM uses digital radio techniques. The GSM system has the following advantages over previous analogue systems: International Roaming - Due to international harmonization and
standardization, it will be possible to make and receive calls in any
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country which supports a GSM system.
Digital Air Interface - The GSM phone will provide an entirely digital link between the telephone and the base station, which is, in turn, digitally linked into the switching subsystems and on into the PSTN.
ISDN Compatibility - ISDN is a digital communications standard that many countries are committed to implementing. It is designed to carry digital voice and data over existing copper telephone cables. The GSM phone will be able to offer similar features to the ISDN telephone.
Security and Confidentiality – Telephone calls on analogue systems can very easily be overheard by the use of a suitable radio receiver.
GSM offers vastly improved confidentiality because of the way in which data is digitally encrypted and transmitted.
Better Call Quality - Co-channel interference, handover breaks, and fading will be dealt with more effectively in the digital system. The call quality is also enhanced by error correction, which reconstructs lost information.
Efficiency - The GSM system will be able to use spectral resources in a much more efficient way than previous analogue
Systems
In the figure below, the area bounded by bold lines represents the total coverage area of a hypothetical system. This area is divided into several cells, each containing a cell site (base station) operating on a given set of channels which interfaces radiotele- phone subscribers to the telephone switching system.
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The radiotelephones themselves are capable of operation on any channel in the system, allowing them to operate in any cell. Due to the low power requirements for communications between radiotelephones in a particular cell and the cell site, operating channels may be repeated in cells which are outside the coverage area of each other.
For example, presume that cell A operates on channels arbitrarily numbered 1 through 8, cell B operates on channels 9 through 16, cell C operates on channels 17 through 24 and cell D operates on channels 1 through 8 (repeating the usage of those channels used by cell A). In this system, subscribers in cell A and subscribers in cell D could simultaneously operate on channels 1 through 8.
The implementation of frequency re-use increases the call handling capability of the system, without increasing the number of available channels. When re-using identical frequencies in a small area, co-channel interference can be a problem. The GSM system can tolerate higher levels of co-channel interference than analogue systems, by incorporating digital modulation, forward error correction and equalization. This means that cells using identical frequencies can be
CELL A
CHANNELS
1-8
CELL B
CHANNELS
9-16
CELL C
CHANNELS
17-24
CELL D
CHANNELS
1-8
CELL F
CHANNELS
17-24
CELL E
CHANNELS
9-16
Figure 2: Hypothetical
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physically closer, than similar cells in analogue systems. Therefore the advantage of frequency re-use can be further enhanced in a GSM system, allowing greater traffic handling in high use areas.
By incorporating Time Division Multiple Access (TDMA) several calls can share the same carrier. The carrier is divided into a continuous stream of TDMA frames, each frame is split into eight time slots. When a connection is required the system allocates the subscriber a dedicated time slot within each TDMA frame. User data (speech/data) for transmission is digitized and sectioned into blocks. The user data blocks are sent as information bursts in the allocated time slot of each TDMA frame.
The data blocks are modulated onto the carrier using Gaussian Minimum Shift Keying (GMSK), a very efficient method of phase modulation.
Each time an information burst is transmitted, it may be transmitted on a different frequency. This process is known as frequency hopping. Frequency hopping reduces the effects of fading, and enhances the security and confidentiality of the link. A GSM radiotelephone is only required to transmit for one burst in each frame, and not continually, thus enabling the unit to be more power efficient.
Each radiotelephone must be able to move from one cell to another, with minimal inconvenience to the user. The mobile itself carries out signal strength measurements on adjacent cells, and the quality of the traffic channel is measured by both the mobile and the base station. The handover criteria can thus be much more accurately determined, and the handover made before the channel quality deteriorates to the point that the subscriber notices.
When a radiotelephone is well within a cell, the signal strength measured will be high. As the radiotelephone moves towards the edge of the cell, the signal strength and quality measurement decreases.
Signal information provides an indication of the subscriber’s
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distance from the base station. As the radiotelephone moves from cell to cell, its control is handed from one base station to another in the new cell.
This change is handled by the radiotele-phone and base stations, and is completely transparent to the user.
Service Area
The area within which calls can be placed and received is defined by the system operators. (Because this is a radio system, there is no exact boundary that can be drawn on a map.) If the telephone is outside a coverage area, the (no service) indicator will illuminate and calls will be unable to be placed or received. If this happens during a conversation, the call will be lost. There may also besmall areas within a particular service area where communications may be lost.
The radiotelephone’s identity information is held by its local GSM system in its Home Location Register (HLR) and Visitor Location Register (VLR). The VLR contains identity information on all local active radiotelephones. Should you roam to another area, system or country the radiotelephones identity information is sent to the VLR in the new system. The new system will then check the radiotelephones details with your home system for authenticity. If everything is in order it will be possible to initiate and receive calls whilst in the new area.
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Baseband function Descriptions
1. Introduction:
March(T191) utilizes TI’s chipsets (Ulysse and Nausica) as base-band solution. Base-band is composed with two potions: Logic and Analog/Codec. Ulysse is a GSM digital base-band logic solution included microprocessor, DSP, and peripherals. Nausica is a combination of analog/codec solution and power management which contain base-band codec, voice-band codec, several voltage regulators and SIM level shifter etc. In addition, 56D66 integrates with other features such as LED backlight, LCD display, vibration, buzzer and charging etc. The following sections will present the operation theory with circuitry and descriptions respectively.
2. Block Diagram
2.1 Ulysse (Hercules)
JAMES WANG, WEN-SHIH LIU PAGE 1 OF 2
DUAL BAND AMETHYST
BASEBAND BLOCK DIAGRAM REV 1.0
DUAL BAND AMETHYST
SRAM 1Mbit
G5 A2 B5 A1 B2
Flash
Memory
32Mbit
D7 B4 B3 D8
ARM7
RTC
PWT PWL
UART
I2C
SPI
MEM. INTF.
GPIO
ACT
TSP
SIM
JTAG
RIF
Voice-
band INTF
DAI
DSP
2M
SRAM
E10 A11
B6 C2
B1 D2
D3 F4
C4
K11
J1 J3 M6 A7
C7 C8 A8
P6 M9 N8 L8
P7 K8 K7
C6 E6 E9 B11 D11 B12 B13 H10
D14 E14 D13
J14 J13 K14
G1 H1 H3 H2
F12 F13 F14 G13
G11 H12 H13 H11
D8 D9 B9 A9
NROMCS1 FDP RNW NFOE
NRAMCS NBLE NBHE
MCUEN MCUDO MCUDI
IO3DATA_HP_SEL IO13ACCIN
IO0VIBRATOR IO1BATID_DET
SCL SDA NRSTOUT
TXD0 RXD0
BU BL
RTCINT
H3 D7 G3 G14 H14
VR1 VR2 VR2B VR3
RX_ON TX_ON
DCS_T/R
GSM_T/R
BS2
PC
BS1
LE
DATA
CLK
TSPEN0
S_CLK
S_IO
S_RST
TCK TMS TDO
TDI
BFSR
BDR
BFSX
BDX
VCLKRX
VDX VDR
VFSRX
DAI_RST
DAI_CLK
DAI_DI
DAI_DO
TO / FROM
OMEGA
{
TO / FROM
OMEGA
{
JTAG
TO / FROM
OMEGA
{
DAI INTF
{
DATA BUS
DATA BUS
ADDRESS BUS
VR2
DATA BUS
ADDRESS BUS
VR2
}
TO / FROM ULYSSE
LCM
CONT.
4 5 6
7 , 8
1
2 , 3
VR2 VLCD
C34
}
TO EARPHONE JACK
BQ3
BUZZER
U7 BQ2
LCM BACKLIGHT
KEYPAD BACKLIGHT
BQ4 M
U15 BATID
EXTIRQ EXTFIQ NRESET
13MHZ
13MOUT
FROM
OMEGA
FROM U61
KEYPAD
POWER
FROM OMEGA
ULYSSE
U1
VIBRATOR
X1 32.768KHZ
E11 D6
TCXOEN
ON_OFF
{
{ {
TO RF BLOCK
TO RF BLOCK
{
TO / FROM
OMEGA
ROW0~ROW3
COL0~COL4
ADDRESS BUS
VBAT
VBATBB
VBAT
U5
U6
TO OMEGA
TO U84,U90
FROM OMEGA
TO OMEGA
TO OMEGA
U9
3 4 2
1
R72
EARPHONE JACK
TXDO
AUXI
IO3DATA_HP_SEL
IO13ACCIN
RXDO
AUXOP
U8
U10
VR2BSW
VR2BSW
MIC
SPK
VR2BSWVR2B
{
U13
M1
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2.2 Nausica (Omega)
IBIC BUS
CONT.
C4 B3 B2 B4 B5 D4 A2 A1 B1
BSP
K5 J 5 H5 G5
SPI
BCI
ADC
VRPC
F5 K6 J 6
E3 E4 E5
B5 A5 E6 D6 C6
F7 F6 D7 D10
B10
BACKUP
VR1B
2.0V@50mA
VR2B
2.9V@50mA
VR2
2.9V@120mA VR1
1.8V@120mA VR3
2.9V@80mA
VREG
B/B U/L
C9
C10
D8 D9
B/B D/L
E7 E8 E9
E10
AFC APC
TSP
VOICE
D/L
VOICE
U/L
USP
SIM REG.
3/5V
SHIFTER
F8 F9 J 4
K4 H8
H9 J 9 K9 J 8 K8 H7
H6 G6 G7 K7
K3 D2
G9
J3 C3
C1
D1
E1
H1
H10
F1 A4
TXIP TXIN TXQP TXQN RXIP RXIN RXQP RXQN
AFC
RAMP
SMADA TPENQ
AUXOP MICBIAS
MICIN MICIP AUXI
VCLKRX VDR VDSRX VDX
S_CLK S_RST S_IO CLK RST I/O VSIM
C8
BDX
BFSX
BDR
BFSR
MCUEN0
MCUDO
MCUDI
ICTL
VCHG
VBAT
BATID
TBAT
HWID
EXTFIQ
NRESET
RTCINT
ON_OFF
PWON
VCC1 VCC2 VCC3
VBACKUP
UPR
VR1B
VR2B
VR2
VR1
VR3
OSCAS EXTIRQ
EARPHONE_IN
SIM
SOCKET
1 3 2 4
}
TO / FROM ULYSSE
}
}
TO U61
}
FROM U61
TR1
ROW4
S19
EARN EARP
SPEAKER
MICROPHONE
TO U85 TO U74
}
TO/FROM ULYSSE
{
TO / FROM
ULYSSE
{
TO / FROM
ULYSSE
{
FROM BATBB
OMEGA
POWER JACK
BATTERY
CONNECTOR
U3
COIN LI-ION
BATTERY
TO / FROM ULYSSE
1 2 3 4
4 3 2 1
ICTL
VCHG
MANTEST
FUSE
F1
+
_
U4
U14
FROM ULYSSE
C22
TO / FROM
ULYSSE
{
D1
S1
G2
D2
G1
S2
U17
U17
JAMES WANG, WEN-SHIH LIU PAGE 2 OF 2
DUAL BAND AMETHYST
BASEBAND BLOCK DIAGRAM REV 1.0
DUAL BAND AMETHYST
U18
U16
D1
D2
D1
D2
J 1
R21
R24
VR3
VBBATBB
3. Theory:
3.1 Ulysse
ULYSSE (HERCROM200) is a chip implementing the digital base-band processor of a GSM mobile phone. This chip combines a DSP M16L80 mega-module (LEAD2 CPU) with its program and data memories, a Micro-Controller core with emulation facilities (ARM7TDMIE) and an internal 2M-bit RAM memory, a clock squarer cell, several compiled single-port or 2-ports RAM and 120K equivalent CMOS gates.
Major functions of this chip are as follows:
3.1.1 Real Time Clock (RTC)
3.1.2 Pulse Width Tones (PWT)
The function of the PWT is to generate a modulated frequency signal for the external buzzer.
3.1.3 Pulse Width Light (PWL)
This module allows the control of the backlight of LCD and keypad by employing a 4096 bit random sequence.
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3.1.4 MODEM-UART
3.1.5 I2C master serial interface (I2C)
In 56D66, we employ I2C bus to control LCD module.
I2C_SCL: programmed to the fast transmission mode (400KHz) I2C_SDA: the serial bi-directional data of the LCM controller
3.1.6 General Purposes I/O (GPIO)
Ulysse provides 16 GPIOs configurable in read or write mode by internal registers. In 56D66, we utilize 5 of them as follows:
IO0 : to control vibrator; ‘L’: idle, ‘H’: activate vibrator IO1 : to identify legal NiMH battery IO3 : to control phone jack configuration; ‘L’: data cable, ‘H’:
hands-free
IO8 : to support one-wire protocol for Li-Ion battery
IO13 : to detect accessory plug-in at phone jack; ‘H’: idle, ‘L’: plug-in
3.1.7 Serial Port Interface (SPI)
3.1.8 Memory Interface and internal Static RAM
A 2Mbit SRAM is embedded on the die and memory mapped on the chip-select CS6 of the memory interface.
3.1.9 SIM Interface
3.1.10 JTAG
3.1.11 Time Serial Port (TSP)
3.1.12 TSP Parallel interface (ACT)
In 56D66, we employ 8 of them to control RF activity.
TSPACT1: Band selection 1 (BS1) TSPACT2: Power control enable (PC) TSPACT3: Band selection 2 (BS2) TSPACT4: GSM TR switch on/off (GSM_TR) TSPACT5: DCS TR switch on/off (DCS_TR) TSPACT8: RX VCO on/off (RX_ON) TSPACT9: TX VCO on/off (TX_ON) TSPACT10: Latch enable (LE)
3.1.13 Radio Interface (RIF)
3.2 Nausica (Omega)
Together with a digital base-band device (Ulysse), OMEGA is part of a TI DSP solution intended for digital cellular telephone applications including GSM 900, DCS 1800 and PCS 1900 standards (dual band
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capability).
It includes a complete set of base-band functions to perform the interface and processing of voice signals, base-band in-phase (I) and quadrature (Q) signals which support single-slot and multi-slot mode, associated auxiliary RF control features, supply voltage regulation, battery charging control and switch ON/OFF system analysis.
OMEGA interfaces with the digital base-band device through a set of digital interfaces dedicated to the main functions of Ulysse, a base-band serial port (BSP) and a voice-band serial port (VSP) to communicate with the DSP core (LEAD), a micro-controller serial port to communicate with the micro-controller core and a time serial port (TSP) to communicate with the time processing unit (TPU) for real time control.
OMEGA includes also on chip voltage reference, under voltage detection and power-on reset circuits.
Major functions of this chip are as follows:
3.2.1 Baseband Codec (BBC)
3.2.2 Automatic Frequency control (AFC)
3.2.3 Automatic Power Control (APC)
3.2.4 Time serial port (TSP)
3.2.5 Voice band Codec (VBC)
3.2.6 Micro-controller serial port (USP)
3.2.7 SIM card shifters (SIMS)
3.2.8 Voltage Regulation (VREG)
Linear-regulation performed by several low dropout (LDO) regulators to supply analog and digital baseband circuits. (1) LDO R1 generates the supply voltage (2.5V, 1.8V, 1.4V and 1.2V)
for the digital core of Ulysse. In 56D66, it is programmed to 1.8V. This regulator takes power from the battery voltage and it has a backup through BBS system.
(2) LDO R1B generates the supply voltage 2.0V for the digital core of
OMEGA. It is supplied by the battery.
(3) LDO R2B generates the supply voltage 2.9V for the digital I/O’s of
Ulysse and Omega. It is supplied from battery voltage and has a backup through BBS system.
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(4) LDO R2 generates the supply voltages 2.9V for Ulysse memory
interfaces I/O’s. It has a backup through BBS system.
(5) LDO R3 generates the supply voltage 2.9V for the analog
functions of OMEGA.
The backup battery switch (BBS) generates at its output an uninterrupted power rail (UPR) of which purpose is to supply continuously the minimum necessary circuitry of the power-control functions either from the main battery of from the backup battery
3.2.9 Baseband Serial Port (BSP)
3.2.10 Battery charger Interface (BCI)
3.2.11 Monitoring ADC (MADC)
3.2.12 Reference Voltage / Power on Control (VRPC)
3.2.13 Internal bus and interrupt controller (IBIC)
3.3 Power Supply circuit
BGND
BGND
VR3
BGND
BGND
BGND
VR2B
BGND
BGND
BGND
VR2
VBATBB
VR1VR1B
TPL16
1
U1
ULYSSE_uBGA179
B2 C2 C3 B1 C1 D3 D2 D1 F5 E4 E2 E3 E1 F4 F3 F2 F1 G5 G4 G2 G3 G1 H1 H3 H2 H4 H5 J1 J2 J3 J4 K1 K3 K2 K4 J5 L1 L2 L3 M1 N1 M3 M2
N2
P2N3P3L4M4N4P4K5L5N5P5M5K6M6P6N6L6K7L7P7N7M7M8N8P8L8K8L9N9P9M9K9M10
P10
N10
L10
K10
P11
N11
M11
L11
P12
N12
P13
N13
M13
M12
N14
M14
L12
L13
L14
K11
K13
K12
K14
J11
J12
J13
J14
H10
H11
H13
H12
H14
G14
J10
G12
G13
G11
G10
F14
F13
F12
F11
E14
E12
E13
E11
F10
D14
D13
D12
C14
B14
C12
C13
B13
A13
B12
A12
D11
C11
B11
A11
E10
D10
B10
A10
C10E9C9A9B9D9E8D8A8B8C8C7B7A7D7E7D6B6A6C6E6C5A5B5D5E5A4B4C4D4A3B3A2
P1
A14
P14
GND BU/PWT VDDS2 LT/PWL SDO/INT10n RX_MODEM TX_MODEM SD_IRDA/CLKOUT_DSP DSR_MODEM/LPG RTS_MODEM/TOUT CTS_MODEM/XF SCLK/INT1n RX_IRDA nSCS0/SCL RXIR_IRDA/X_A1 TX_IRDA TXIR_IRDA/X_A4 nSCS1/X_A2 nEMU1 nEMU0 nRESPWRON TCK TMS TDO TDI nBSCAN EN_LMM_PWR/X_IOSTRB IO0/TPU_WAIT GND IO1/TPU_IDLE ADD0 ADD1 VDDS1 ADD2 ADD3 VDD ADD4 ADD5 ADD6 ADD7 ADD8 ADD9 ADD10
ADD11
ADD12
ADD13
GNDLMM
ADD14
IO2/IRQ4
ADD15
ADD16
ADD17
ADD18
ADD19
ADD20
VDDLMM
ADD21/CK16X_IRDA
IO3/SIM_RnW
nCS0
GND
VDDS1
nBHE/IO14
nCS1
nCS2
GNDLMM
nCS3
CS4/ADD22
RnW
VDD
nFOE/X_A3
nBLE/IO15
nFWE/X_A0
VDDS1
DATA0
FDP/nIACK
DATA1
GND
DATA2
DATA3
GND
DATA4
DATA5
GNDARM
DATA6
DATA7
VDDARM
DATA8
DATA9
DATA10
DATA11
DATA12
DATA13
DATA14
GND
DATA15
CLK13M_OUT/START_BIT
nRESET_OUT/IO7
TSPACT11/MCLK
VDDS2
SIM_RST
SIM_CD/MAS0
SIM_PWCTRL/IO5
SIM_IO
SIM_CLK
TSPACT10/nWAIT
VFSRX
VDR
VDX
GNDA1
CLKTCXO
VDDS1
VDDA1
BDX
VCLKRX
BCLKX/IO6
BFSX
BDR
BFSR
BCLKR/ARMCLK
TSPCLKX
GND
EXT_IRQ
TCXOEN
VDD
TSPDO
TSPEN0
TSPEN1
TSPDI/IO4
TSPEN2
TSPEN3/nSCS2
TSPACT0
TSPACT1
VDD
TSPACT2
GND
TSPACT3
CLK32K_OUT
GNDA2
OSC32K_OUT
OSC32K_IN
VDDS2
TSPACT4
RFEN/NOPC
GND
TSPACT5
IDDQ
MCSI_TXD/IO9
MCSI_RXD/IO10
MCSI_CLK/IO11
TSPACT6/nCS6
MCSI_FSYNCH/IO12
MCUDI
VDDLMM
MCUDO
MCUEN0
MCUEN1/IO8
MCUEN2/IO13
EXT_FIQ
TSPACT7/CLKX_SPI
ON_OFF
IT_WAKEUP/INT4n
KBC0/NFIQ
TSPACT8/nMREQ
TSPACT9/MAS1
GNDLMM
KBC1/NIRQ
KBC2/XDI_00
KBC3/XDI_01
KBC4/XDI_02
KBR0/XDI_03
KBR1/XDI_04
SDI/SDA
KBR2/XDI_05
VDDLMM
KBR3/XDI_06
KBR4/XDI_07
GND
VDDS2
VDDS1
C21 10UF
C26
0.1UF
C250.1UF
C19 2.2UF
C1710UF
C20 10UF
R22
0
R15
0
U3
OMEGA
B2B1C2C3C1D2D1D3E1E2E3E4E5F1F2F3F4G4G1G2G3H1H2J1K1
J2
K2
J3
H3
K3
J4
K4
H4
K5
J5
H5
G5
F5
K6
J6
H6
G6
G7
K7
J7
H7
K8
J8
K9
K10
A10
B10C9D8D9D10D7E7E8E9
E10F6F7F8F9
F10G8G10G9H10H8H9
J10
J9
A1
A2
B3
A3
C4
B4
A4
D4
D5
C5
B5
A5
E6
D6
C6
B6
A6
C7
A7
B7
A8
C8
B8
A9
B9
C10
SIO3
VS1
GRND2
UPR
VR1BOUT
VCC2
VR2BOUT
VR2SEL
VR2OUT
VR2IN
ICTL
VCHG
VBAT
OSCAS
TESTRESETZ
REFGND
VREF
BGTR1
IBIAS
BGTR3
BGTR2
VR1OUT
BGTR4
FDBK
GRND1
BGTR5
SWITCH
VBACKUP
COMP
VCC1
TDR
TEN
INT2
BDX
BFSX
BDR
BFSR
UEN
UDR
UDX
VCK
VDX
VFS
VDR
AGNDA1
AUXI
MICIP
MICIN
MICBIAS
BUZZOP
RPWON
PWON
BULIP
BULQP
BULQM
ONNOFF
RTC_ALARM
BDLIP
BDLIM
BDLQP
BDLQM
RESPWRONZ
INT1
AFC
APC
DAC
AUXGND
GRND3
VCC3
VR3OUT
EARN
EARP
AUXON
AUXOP
VS2
SVDD
SRST3
VAUX
SCLK3
SCLK5
CK13M
SIO5
SRST5
LCDSYNC
ADIN1
ADIN2
ADIN3
ADIN4/TSCXP
ADIN5/TSCYP
TSCXM
TSCYM
TDO
TDI
TCK
TMS
TEST1
TEST2
TEST3
TEST4
BULIM
R54
0
+-V
U4A
Back-up Battery
2 1
R160R17
0
C15 2.2UF
2.9V@80mA Omega/Ulysse Analog part
1.8V@120mA
Ulysse Core
2.9V@120mA
Memory
2.9V@50mA
Peripherals
(From Main Battery)
2.0V@50mA
Omega Core
The phone is mainly supplied from the main battery (VBAT) which is divided into two routes: VBAT is for RF block, vibrator and buzzer; VBATBB is for baseband block.
The input power (VBATBB) to Nausica is divided into 4 blocks:
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VCC1: to provide power for DC/DC and regulator R1 (VR1) VCC2: to provide power for regulator R1B (VR1B), R2B (VR2B) and
charger pump VCC3: to provide power for regulator R3 (VR3) VR2IN: to provide power for regulator R2 (VR2)
NAUSICA provides five low drop-out voltage regulators. R1 (VR1): 1.8V@50mA; to supply ULYSSE digital core, RTC,
32KHz and the internal SRAM
R2 (VR2): 2.9V@120mA; to supply 13MHz clock, external memory
devices and LCD display
R2B (VR2B): 2.9V@50mA; to supply peripheral devices, I/O to
NAUSICA R1B (VR1B): 2.0V@50mA; to supply the digital part of NAUSICA R3 (VR3): 2.9V@80mA; to supply analog part of NAUSICA. Among these 5 LDOs, only R1, R2 and R2B are support with
back-up mode.
The power of Ulysse is supplied by these LDOs: VDD: supplied by VR1 and used for core logic VDDS1: supplied by VR2 and used for I/Os to memory devices VDDS2: supplied by VR2B and used for I/Os to Omega and peripherals
VDDLMM: supplied by VR1 and used for Lead MegaModule (DSP) VDDARM: supplied by VR1 and used for ARM
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3.4 System power on/off Sequence
3.4.1 Power on
There are three conditions that system can power on.
-On button pushed: A falling edge is detected on PWON pin and the
debouncing time is greater than 30ms.
-Set Alarm: A rising edge is detected on RTC_ALARM (RTCINT)
-Charger plugged: VCHG > VBAT + 0.4V is detected
When these conditions occur in the power on state, the
hardware power on sequence starts:
1. Enable local oscillator OSCAS (~ 100KHz)
2. Enable band-gap (VREF and IREF)
3. Check if Main Battery voltage is greater than 3.2V
4. Enable charge pump (VAUX ~ 5.8V)
5. Enable LDO regulators (R1, R1B, R2, R2B and R3)
6. Set ON_OFF pin to ‘H’.
7. NRESET pin is set from ‘L’ to ‘H’
8. 13MHz clock oscillator is enabled (Ulysse’s task)
3.4.2 Power off in normal mode
When system is powered off in normal mode by long pressing
power-on key, the power off sequence will be executed:
1. Start watchdog timer during 150us and disable DC/DC
2. Set ON_OFF pin to ‘L’
3. Disable all the regulators
4. Disable the band-gap
5. Disable the local oscillator OSCAS
3.4.3 Power off in emergency mode
When the main battery voltage is detected lower than 2.7V, the
following sequence is executed:
1. Set INT1 (FIQ) to ‘L’
2. Start watchdog timer during 150us and disable DC/DC
3. Set ON_OFF pin to ‘L’
4. Disable all the regulators
5. Disable the band-gap
6. Disable the local oscillator OSCAS
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3.5 Memory circuit
DATA BUS
U5
FLASH
U6
SRAM
ULYSSE
CE#
CE1
NROMCS1
NRAMCS
OE#
NFOE
ADDRESS BUS
RP#
WE#
FDP
RNW
OE HB LB
NBHE NBLE
VCCQ
VCC
VCC VCC CE2
VR2
VR2
Description
Flash (U5) is a 32Mbit device, supported by VR2 and booted from top. The total 32Mbits are divided into two sections: 24Mbits is used for software program code and 8Mbits is used for EEPROM data. The access time of Flash is 100ns. SRAM (U6) is a 1Mbit device, supported by VR2. The access time of SRAM is 70ns.
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3.6 Display circuit
VR2
BGND
NRSTOUT
I2C_SDA
I2C_SCL
R27
1K
C33
1UF(0603)
C32
C(0603)
J2
LCD
1
2
3
4
5
6
7
8
9
10
VLCD
VSS
VSS
SCL
SDA
/RES
VDD2,3
VDD1
X
X
C50
39PF
C51
39PF
C34
1UF(0805 Z5U 16V)
2.9V
400KHz
7.6V
From U1/Ulysse
Description
Display circuit is composed of a 98*64 resolution LCD module and a display supply voltage bypass capacitor C34. The power of LCDM is supplied from VR2. It is controlled by U1 via I2C bus: SCL and SDA. The data rate of I2C is programmed to 400KHz. NRESTOUT is low active to reset all LCD registers. The LCD Module is adopted with COG (chip on glass) type, and default display supply voltage VLCD at normal temperature is 7.6V. R27 is used for ESD protection and C50, C51 are used for radiation suppression.
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3.7 Vibrator circuit
BGND
VBAT
IO0VIBRATOR
R49
15
R46
1K
A
-
+
M1 LA4-432
12
BQ4
UMT4401
2
1
3
D14
DAN222
2
1
3
3.6V
94mA
1.2V
From U1/Ulysse
Description
To enable vibration, Ulysse sets IO0VIBRATOR to ‘H’ to activate the motor. R46 and R49 are used to make BQ4 working in saturation area. D14 is used to feedback EMF. Under the condition of VBAT =
3.6V, the average voltage across the motor is about 1.2V and drain current is around 94mA.
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3.8 Buzzer circuit
VBAT
BGND
BGNDBGND
BU
BUZZOP
C59 8PF
D14 DAN222
2
1
3
U13
BUZZER
3
4
R48 0
R45
1K
BQ3
UMT4401
2
1
3
T10
TVS
1 2
. .
D16
DAN222(N.M.)
2
1
3
R71
0
3.6V
78mA
1.3V
From U1/Ulysse
(PWT)
(Not In Use)
Description
To alert the buzzer, Ulysse applies PWT (Pulse Width Tone) signal at BU to drive the buzzer. R45 and R48 are used to make BQ3 working in saturation mode. D14 is used to feedback EMF. Under the condition of VBAT = 3.6V, the average current is 78mA and terminal voltage of buzzer is about 1.3V.
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3.9 LED circuit
BGND
VBATBB
BGND
BGND
BL
BQ2
UMT4403
2
1 3
D8 19-21
D7 19-21
D9 19-21
D5 19-21D619-21
R34
2K
D10 19-21
R35
24 (0805)
U7
UMH10N(SOT363)
1 6
2
3 4
5
D11 19-21
D12 19-21
D3 22-21
D13 22-21
D4 22-21
R40
39 (0805)
3.6V
From U1/Ulysse
3.35V
60mA37mA
1.9V
(PWL)
Description
56D66 employs three LEDs for LCD module backlight and eight LEDs for keypad backlight. To light up the LEDs, Ulysse applies PWL (Pulse Width Light) at BL to drive LEDs. U7 is used as an inverter to enable BQ2. Under the default condition (VBAT=3.6V), the average current of one LCD backlight LED is about 12mA and of one keypad backlight LED is about 7.5mA. In 56D66, all the LEDs are yellow-green color and forward voltage is 1.9V
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3.10 Audio circuit Uplink:
MICIP
MICIN
BGND
MICBIAS
BGND
BGND
C43
4.7UF(0805)
R43
1K
C44 1UF(0603)
X2
Microphone
1 2 3
1 2 3
C54 47PF
R44
4.3K
C42
0.1UF
C45 1UF(0603)
R47
4.3K
U14
EMIF01-10005W5
1 2
34
5
I1
GND
I2O2
O1
R50 0
C53 47PF
R51 0
2.5V
From U3/Omega
To U3/Omega To U3/Omega
Downlink:
EARN
EARP
BGND BGND
BGND
C39
100PF
BL2 0
BL3 0
R74
10
LS1
SPEAKER_0
C41 150PF
U12
EMIF01-10005W5 (N.M.)
1 2
3 4
5
I1 GND
I2 O2
O1
C40 150PF
R73
10
T4
TVS
1 2
. .
T3
TVS
1 2
. .
From U3/Omega From U3/Omega
Description The audio circuit is divided into two parts, uplink and downlink.
For uplink path, the analog voice signals are fed into NAUSICA from the microphone differential input and then transmitted to Ulysse DSP via the voice-band series port (VSP). After being modulated, the signals go through the uplink I/Q path to the RF transceiver and transmitted from the antenna.
The microphone circuit is biased from Nausica MICBIAS (2.5V). The bias circuit R43, R44, R47 mainly provides the optimal operation point for the microphone signals, MICP and MICN. For downlink path, the signals received from the antenna are down-converted to I/Q signals and then transmitted to Ulysse DSP. After being demodulated, the signals are fed to NAUSICA via voice-band interface and then amplified to drive the receiver.
BenQ Rev 1.0
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3.11 Charging circuit
BGND
BGND
BGND
VBATBB
VBAT
VR3
BGND
BGND
BGND
BGND
BGND
BGND
BGND
BGND
BGND
CHARGERIN
TBAT
VCHG
BATID_NIMH
IO8ONEWIRE
ICTL
G1
S2 G2
D2S1D1
U17 FDC6506P
1 6
3 4
52
C28
C
C31
0.1UF
G1
S2
G2
D2
S1
D1
U18 FDG6303N
1 6
3 4
52
R70 0
R66
3.9M
R67 200K
C48
4.7UF(0805)
R68 0
D15
RB520S-30
1 2
G1
S2
G2
D2
S1
D1
U16FDG6303N
1 6
3 4
52
R65 43K (1%)
R63
470K
R62
470K (1%)
R60
6.2K
F1
FUSE(1A 0603)
C49 1K
T1
TVS
12
..
T5
TVS
12
..
J1
Power Jack
1 2 3 4
V+ SW SW
GND
J5
0
1 2 3
C56
10UF(0805)
R24
0.2(1%) 0805
D1
CRS03
1 2
C30 100PF
R25 47K
JP1
BATTERY CONN
4 3 2 1
C29
10UF(0805)
C47
0.1UF
C57
1000PF
C55
0.1UF
R64 100K
C58
1000PF
Trigger Charging Circuit
Charger Over-voltage Protection Circuit
Main Charging Route
To U3/Omega To U3/Omega
Description
The charging circuit of 56D66 is composed of charger over-voltage protection circuit, 3-sec trigger charging circuit and main charging circuit that are controlled by Omega (U3). 56D66’s charging devices are standard linear 3.6V/600mA charger and switching VPA (cigarette charger) with 6V/400mA output.
The group of R62, R65, R63 R64, R70, C47 and U16 compose the charger over-voltage protection circuit. The cut-off voltage is 8V. While the charger voltage is over 8V, the circuit will turn off U17 by latching U17.G1 to stop charging.
The group of D15, R66, C48, R67 and U18 compose the 3-sec trigger charging circuit. At the very beginning of charging, the circuit will force to turn on U17 to full charger the battery which can prevent from long charging wake-up for deep discharge battery. After around 3 seconds, software will take over the charging task by controlling ICTL.
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F1 is a 1A fuse to assure charging current under limit.
The normal charging operation theory is that Omega monitors charger voltage via VCHG pin to decide whether charger plug in or out, and control power P-MOSFET (U17) via ICTL pin. If phone enters into charging mode, Ulysse will follow the charging algorithm to control charging circuit and monitor charging current by detecting the terminal voltage of R24 (0.2 ohm). Omega control procedure is classified into two parts according to whether battery voltage is higher than 3.2V. Omega will execute trickle charge with 20mA to charge battery via VCHG pin if battery voltage is lower than 3.2V. On the other hand, the phone will proceed normal charging task following by the charging algorithm.
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3.12 Earphone jack circuit
IO3DATA_HP_SEL
VR3
IO13ACCIN
AUXI
EARPHONE_INRXD0
MICBIAS
TXD0
AUXOP
BGND
BGND
BGND
BGND
BGND
VR3
VR2B_SW
BGND
BGND
VR2B_SW
BGND
T9
TVS
1 2
. .
T8
T
1 2
. .
R76
0
U8
NC7SB3157
1
3
2
4
5
6
B1
B0
GndAVcc
S
BL1
BEAD(0603)
R36 10K
T2
TVS
1 2
. .
C37
4.7UF(0805)
R72 1K
J3
Audio Jack
12 3 4 5
GNDSW SPK MIC MIC
R37 2K
R38
1K
R41
2K
U9
EMIF01-10005W5
1 2
3 4
5
I1 GND
I2 O2
O1
U10
NC7SB3157
1
3
2
4
5
6
B1
B0
GndAVcc
S
C38
1UF(0603)
BL4
22
J4
0
1 2 3
TP33
1
R32 100K
L: Download H: Earpiece active
Plug-In
2.9V
2.9V
V= 1.0 ~ 2.4 => Hands-free V= 2.6 ~ 2.8 => Data Cable
(To U3/Omega)
2.9V
(Not In Use)
For Data Cable
For Hands-Free
(From U1/Ulysse)
Description
The earphone Jack circuit is used either for the headset or the data service. The IO13ACCIN will be pulled to low level when headset or data cable is plugged in. Here, U8 and U10 are used as the switch between headset using or data service using which is controlled by the IO3DATA_HP_SEL. When IO13ACCIN is detected as low level, IO3DATA_HP_SEL is switched from low to high level to identify whether the headset or the data cable is plug-in by reading the voltage at EARPHONE_IN. If the voltage at EARPHONE_IN is in the range of
1.0V to 2.4V, the phone recognizes headset is plugged in and IO3DATA_HP_SEL stays at high to keep U8 and U10 as auxiliary audio path. If the voltage at EARPHONE_IN is in the range of 2.6V to 2.8V, the phone identifies data cable plugged in and IO IO3DATA_HP_SEL switches back to low to keep U8 and U10 as data service path.
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3.13 Rader circuit
OMEGA
SCLK5
SIO5
SRST5
SVDD
RST
CLK
VCC/VPP
GND
I/OSIO3
SCLK3
SRST3
SIM_IO
SIM_CLK
SIM_RST
ULYSSE
SIM
SOCKET
Description
The SIM follows the GSM and ISO specifications and works in 3 volts or in 5 volts with a minimum external logic.
SIM_IO(I/O): Data SIM_RST(O): Reset signal SIM_CLK(O): Clock (1.6MHz/3.2MHz)
The SIM card digital interface insures the translation of logic levels between ULYSSE and SIM card. There is a level shifter embedded in Omega to support 5V SIM card.
BenQ Rev 1.0
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3.14 Keyboard circuit
BGND
ROW2
COL2
COL3
COL1
ROW4
ROW3ROW0
COL4
ROW1
COL0
PWON
S1 KSW
[3]
S7 KSW
[4]
S2 KSW
[2]
S16 KSW
[#]
S10 KSW
[7]
S3 KSW
[1]
S9
KSW
[8]
S6 KSW
[5]
S5 KSW
[6]
S4 KSW
[Down]
D2
RB520S-30
1 2
S13 KSW
[0]
S15 KSW
[menu]
S19
KSW
[NO] [PWR]
S14 KSW
[*]
S8 KSW
[SEL]
S17 KSW
[Send]
S12 KSW
[9]
S18 KSW
[QUIT]
S11 KSW
[Up]
To U3/Omega
Description
1. The keypad is made of a 5 Column x 4 Row matrixes.
2. The keypad matrix is as follows:
Function Key
COL0 COL1 COL2 COL3 COL4 RO
W0 ROW1 ROW2
ROW3
3 S1 0 0 2 S2 0 0 1 S3 0 0
DOWN S4 0 0
6 S5 0 0 5 S6 0 0 4 S7 0 0
SEL S8 0 0
8 S9 0 0 7 S10 0 0
UP S11 0 0
9 S12 0 0 0 S13 0 0
* S14 0 0
MENU S15 0 0
# S16 0 0
SEND S17 0 0
QUIT S18 0 0
NO/PWR S19
Reference Drawing:
BenQ Rev 1.0
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56D72 Side 1 Layout
U2
RN4
RN2
RN1
RN3
D2
R1
R26
C1
C2
R56
R52
R59
R58
R57
RN5 RN6
C13
R14
U7
BQ2 U14
C35
R34
C54
C53
C44
C45
C55
T1
R51
R50
R44
C43
C48 U18
D15
D1
R24
C29 C56
R66
R67
R25
C36
C42
TR1
R43
R47
R19
C4
C5
R5 R8
R7
R9
C7
R6
R28 R29 R13
R15
R17
R18
R16
C9
R21
C24 R20
C25
C18
C6
R77
C22
R4
R23
C46
C23
C8
C19 C20
C21
C17
C15
R41
R22
C12
C11
C26
R54
C37
R37
R38
U8
U10
C38
R33
R36
R32
U9
JP1
R11
C3
R2
J1
X2
U6
U5
U1
U3
X1
RF
BLOCK
D14
T10
J3
T8
T9 T2
R72
R76
C27
R3
C16
U15
BenQ Rev 1.0
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56D72 Side 2 Layout
LCD Module
D5
D7
D9
D11
D6
D8
D10
D12
D3
D4
D13
C57
T3
C34
T4
BL2
BL3 R74
C41
R73
C39
C40
R40
R35
C50
C51
C33R27
BQ3
BQ4
R48
R45
R71
R49
R46
C31
C30
T5
R60
F1
R75
R68
U17
R64
R70
R65
R63
R62
C49
C47
U16
U4
R61C10
R80
C58
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