ATMEL T2525 User Manual

Features

• No External Components Except PIN Diode

• Supply-voltage Range: 4.5 V to 5.5 V

• Automatic Sensitivity Adaptation (AGC)

• Automatic Strong Signal Adaptation (ATC)

• Enhanced Immunity Against Ambient Light Disturbances

• Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted by Zener Diode

Fusing

• TTL and CMOS Compatible

• Suitable Minimum Burst Length ³ 6 or 10 Pulses/Burst

Applications

• Audio Video Applications

• Home Appliances

• Remote Control Equipment

Description

The IC T2525 is a complete IR receiver for data communication developed and opti­mized for use in carrier-frequency-modulated transmission applications. Its function
can be described using the block diagram (see Figure 1). The input stage meets two
main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly,
the pulsed photo-current signals are transformed into a voltage by a special circuit
which is optimized for low-noise applications. After amplification by a Controlled Gain
Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter
with a center frequency f
input signal. The demodulator is used to convert the input burst signal into a digital
envelope output pulse and to evaluate the signal information quality, i.e., unwanted
pulses will be suppressed at the output pin. All this is done by means of an integrated
dynamic feedback circuit which varies the gain as a function of the present environ­mental condition (ambient light, modulated lamps etc.). Other special features are
used to adapt to the current application to secure best transmission quality. The
T2525 operates in a supply-voltage range of 4.5 V to 5.5 V.

which is equivalent to the chosen carrier frequency of the

0

IR Receiver
ASSP

T2525

Figure 1. Block Diagram

Carrier frequency f

Modulated IR signal

min 6/10 pulses

IN

0

Input

Oscillator

CGA and

filter

AGC/ATC and digital

GND

VS

control

Demodulator

OUT

Micro-

controller

Rev. 4657D–AUTO–11/03

Pin Configuration

Figure 2. Pinning SO8 and TSSOP8

Pin Description

Pin Symbol Function

1 VS Supply voltage
2 NC Not connected
3 OUT Data output
4 NC Not connected
5 IN Input PIN diode
6 GND Ground
7 NC Not connected
8 NC Not connected

VS

NC

OUT

NC

1

8

NC

2

7

NC

3

6

GND

4

5

IN

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Parameters Symbol Value Unit

Supply voltage V
Supply current I
Input voltage V
Input DC current at V

= 5 V I

S

Output voltage V
Output current I
Operating temperature T
Storage temperature T
Power dissipation at T

= 25°C P

amb

S

S

IN

IN

O

O

amb

stg

tot

-0.3 to +6 V
3mA

-0.3 to V

S

V

0.75 mA

-0.3 to V

S

V

10 mA

-25 to +85 °C

-40 to +125 °C

30

mW

Thermal Resistance

Parameter Symbol Value Unit

Junction ambient SO8 R
Junction ambient TSSOP8 R

thJA

thJA

130 K/W

TBD K/W

2

T2525

4657D–AUTO–11/03

T2525

Electrical Characteristics

T

= 25°C, VS = 5 V unless otherwise specified.

amb

No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*

1 Supply

1.1 Supply-voltage range 1 V

1.2 Supply current I

= 0 1 I

IN

S

S

2Output

T

Internal pull-up

2.1
resistor

(1)

2.2 Output voltage low

2.3 Output voltage high 3,1 V
Output current

2.4
clamping

= 25°C;

amb

see Figure 9 on page 7

= 2 mA;

I

L

see Figure 9 on page 7

= 0;

R

2

see Figure 9 on page 7

1,3 R

3,6 V

3,6 I

PU

OL

OH

OCL

3 Input

3.1 Input DC current

Input DC current;

3.2
Figure 4 on page 5

IN

see Figure 9 on page 7

= 0; Vs = 5 V,

V

IN

T

= 25°C

amb

5I

5I

IN_DCMAX

IN_DCMAX

= 0;

V

Test signal:
see Figure 8 on page 7
VS = 5 V,
T

= 25°C,

Minimum detection

3.3

threshold current;
Figure 3 on page 5

amb

= 1 µA;

I

IN_DC

square pp,
burst N = 16,
f = f

; t

= 10 ms,

0

PER

3 I

Eemin

Figure 8 on page 7;
BER = 50

(2)

Test signal:
see Figure 8 on page 7

= 5 V,

V

Minimum detection
threshold current with

3.4

AC current disturbance
IIN_AC100 = 3 µA at
100 Hz

S

T

= 25°C,

amb

I

= 1 µA,

IN_DC

square pp,
burst N = 16,
f = f

; t

= 10 ms,

0

PER

3 I

Eemin

Figure 8 on page 7;
BER = 50%

(2)

*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”

2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT

3. After transformation of input current into voltage

4.555.5V C

0.8 1.1 1.4 mA B

30/40 kW A

250 mV B

VS - 0.25 Vs V B

8mAB

-85 µA C

-530 -960 µA B

-520 pA B

-800 pA C

4657D–AUTO–11/03

3

Electrical Characteristics (Continued)

T

= 25°C, VS = 5 V unless otherwise specified.

amb

No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*

Test signal:
see Figure 8 on page 7
V

= 5 V, T

S

Maximum detection

3.5

threshold current with

> 0V

V

IN

= 1 µA;

I

IN_DC

square pp,
burst N = 16,
f = f

; t

0

Figure 8 on page 7;
BER = 5%

4 Controlled Amplifier and Filter

Maximum value of

4.1
variable gain (CGA)

Minimum value of

4.2
variable gain (CGA)

Total internal

4.3
amplification

Center frequency fusing

4.4
accuracy of bandpass

Overall accuracy center

4.5
f r e q u e n c y o f b a n d p a s s

BPF bandwidth:
type N0 - N3

4.6
BPF bandwidth:

type N6, N7

(3)

= 5 V, T

V

S

-3 dB; f
Figure 6 on page 6

-3 dB; f
Figure 6 on page 6

*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”

2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT

3. After transformation of input current into voltage

= 25°C,

amb

= 10 ms,

PER

(2)

= 25°C f

amb

= 38 kHz; see

0

= 38 kHz

0

3I

Eemax

G

VAR MA X

G

VAR MIN

G

0_FUSE

MAX

f

0

B3.5kHzC

B5.4kHzC

-400 µA D

51 dB D

-5 dB D

71 dB D

-3 f

-6.7 f

0

0

+3 % A

+4.1 % C

ESD All pins Þ 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7

Reliability Electrical qualification (1000h) in molded SO8 plastic package

4

T2525

4657D–AUTO–11/03

T2525

Typical Electrical Curves at T

Figure 3. I

Figure 4. VIN versus I

amb

Eemin

= 25°C

versus I

IN_DC

, VS = 5 V

IN_DC

, VS = 5 V

4657D–AUTO–11/03

Figure 5. Data Transmission Rate, VS = 5 V

5

Figure 7. Illustration of Used Terms

Figure 6. Typical Bandpass Curve

Q = f0/Df; Df = -3 dB values. Example: Q = 1/(1.047 - 0.954) = 11

IN

OUT

OUT

1066 µs

533 µs

7

116

t

DON

Data word

17 ms

Burst (N=16 pulses)

t

DOFF

Envelope 1 Envelope 16

Telegram pause

T

= 62 ms

REP

Example: f = 30 kHz, burst with 16 pulses, 16 periods

Period (P=16)

7

33 µs

17056 µs/data word

7

533 µs

Data word

t

6

T2525

4657D–AUTO–11/03

Figure 8. Test Circuit

IEe = D

T2525

U1/400K

I

Ee

~

I

IN_AC100

Figure 9. Application Circuit

V

1 nF

PULSE

VS

T2525

GND

VDD = 5 V

OUT

R1 = 220

C

1

4.7 µF

DU1

20k

20k

I

IN_DC

I

IN

IN

DU2

I

= DU2/40k

IN_DC

-

DC

+

400k

1 nF

f

0

t

PER

16

= 10 ms

VDD= 5 V

I

IN_DC

(1) optional

(1)

R2

R1 = 220

I

S

RPU

> 2.4k

VS

I

IN

T2525

I

IN

OUT

OCL

I

L

Microcontroller

GND

V

IN

I

Ee

= 4.7 µF

C

1

V

O

(1)

C

= 470 pF

2

4657D–AUTO–11/03

7

Chip Dimensions Figure 10. Chip Size in µm

1130,1030

GND IN

351,904

VS

0,0

63,660

63,70

T2525

FUSING

OUT

width

h

t
g
n
e

l

723,885

Note: Pad coordinates are for lower left corner of the pad in µm from the origin 0,0

scribe

Dimensions Length inclusive scribe 1.15 mm

Width inclusive scribe 1.29 mm

Thickness 290 µ ± 5%

Pads 90 µ ´ 90 µ

Fusing pads 70 µ ´ 70 µ

Pad metallurgy Material AlCu/AlSiTi

(1)

Thickness 0.8 µm

Finish Material Si3N4/SiO

2

Thickness 0.7/0.3 µm

Note: 1. Value depends on manufacture location.

8

T2525

4657D–AUTO–11/03

Ordering Information

T2525

Extended Type
Number PL

(1)

T2525N0xx

T2525N1xx

T2525N2xx

T2525N3xx

T2525N6xx

T2525N7xx

(5)

-yyy

(1)

-DDW 1 30 2090 Standard type: ³ 10 pulses, enhanced sensibility, high data rate

(1)

(5)

-yyy

(1)

-DDW 1 40 1373

(1)

(5)

-yyy

(1)

-DDW 1 30 3415 Short burst type: ³ 6 pulses, enhanced data rate

(2)

(3)

R

PU

(4)

D

Type

2 30 2090 Standard type: ³ 10 pulses, enhanced sensibility, high data rate

2 40 1373

Lamp type: ³ 10 pulses, enhanced suppression of disturbances, secure
data transmission

Lamp type: ³ 10 pulses, enhanced suppression of disturbances, secure
data transmission

2 30 3415 Short burst type: ³ 6 pulses, enhanced data rate

Notes: 1. xx means the used carrier frequency value f0 30,33,36,38,40,44 ,56 kHz.(76 kHz type on request)

2. Two pad layout versions (see Figure 11 and Figure 12) available for different assembly demand

3. Integrated pull-up resistor at pin OUT (see “Electrical Characteristics”)

4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V (see Figure 5 on page 5)

5. yyy means kind of packaging:

.................... .......DDW -> unsawn wafers in box

.................... .......6AQ -> (only on request, TSSOP8 taped and reeled)

Pad Layout Figure 11. Pad Layout 1 (DDW only)

GND

IN

OUT

T2525

VS

FUSING

Figure 12. Pad Layout 2 (DDW, SO8 or TSSOP8)

(6) (5)

(1)

VS

(3)

OUT

GND IN

T2525

FUSING

4657D–AUTO–11/03

9

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4657D–AUTO–11/03