Analog Devices MAT01AH, MAT01GH Datasheet
Matched Monolithic
a
FEATURES
Low V
Low TCV
High h
Excellent h
Low Noise Voltage: 0.23 V p-p—0.1 Hz to 10 Hz
High Breakdown: 45 V min
PRODUCT DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
Silicon Nitride “Triple-Passivation” process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40 µV, tem-
perature drift of 0.15 µV/°C, and h
high h
including an exceptional h
10 nA. The high gain at low collector current makes the
MAT01 ideal for use in low power, low level input stages.
(VBE Match): 40 V typ, 100 V max
OS
: 0.5 V/ⴗC max
OS
: 500 min
FE
Linearity from 10 nA to 10 mA
FE
matching of 0.7%. Very
is provided over a six decade range of collector current,
FE
FE
FE
of 590 at a collector current of only
Dual Transistor
MAT01
PIN CONNECTION
TO-78
(H Suffix)
NOTE: Substrate is connected to case.
BURN-IN CIRCUIT
REV. B
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may result from its use. No license is granted by implication or otherwise
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Fax: 781/326-8703 © Analog Devices, Inc., 2002
MAT01–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Min Typ Min Unit
Breakdown Voltage BV
Offset Voltage V
CEO
OS
(@ VCB = 15 V, IC = 10 A, TA = 25ⴗC, unless otherwise noted.)
MAT01AH MAT01GH
IC = 100 µA45 45 V
0.04 0.1 0.10 0.5 mV
Offset Voltage Stability
First Month V
/Time (Note 1) 2.0 2.0 µV/Mo
OS
Long Term (Note 2) 0.2 0.2 µV/Mo
Offset Current I
Bias Current I
Current Gain h
Current Gain Match ∆h
OS
B
FE
FE
IC = 10 nA 590 430
= 10 µA 500 770 250 560
I
C
I
= 10 mA 840 610
C
IC = 10 µA 0.7 3.0 1.0 8.0 %
100 nA ≤ I
Low Frequency Noise
Voltage en p-p 0.1 Hz to 10 Hz
≤ 10 mA 0.8 1.2 %
C
3
0.1 0.6 0.2 3.2 nA
13 20 18 40 nA
0.23 0.4 0.23 0.4 µV p-p
Broadband Noise
Voltage e
Noise Voltage
Density e
Offset Voltage Change ∆V
Offset Current Change ∆I
Collector-Base
Leakage Current I
Collector-Emitter
Leakage Current I
Collector-Collector
Leakage Current I
Collector Saturation V
Voltage I
Gain-Bandwidth Product f
Output Capacitance C
rms 1 Hz to 10 kHz 0.60 0.60 µV rms
n
n
OS/∆VCB
OS/∆VCB
CBO
CES
CC
CE(SAT)
T
OB
fO = 10 Hz
f
= 100 Hz
O
f
= 1000 Hz
O
0 ≤ VCB ≤ 30 V 0.5 3.0 0.8 8.0 µV/V
0 ≤ VCB ≤ 30 V 2 15 3 70 pA/V
VCB = 30 V, IE = 0
VCE = 30 V, VBE = 0
VCC = 30 V
IB = 0.1 mA, IC = 1 mA 0.12 0.20 0.12 0.25 V
= 1 mA, IC = 10 mA 0.8 0.8 V
B
VCE = 10 V, IC = 10 mA 450 450 MHz
VCB = 15 V, IE = 0 2.8 2.8 pF
3
3
3
4
4, 5
5
7.0 9.0 7.0 9.0 nV/√Hz
6.1 7.6 6.1 7.6 nV/√Hz
6.0 7.5 6.0 7.5 nV/√Hz
15 50 25 200 pA
50 200 90 400 pA
20 200 30 400 pA
Collector-Collector
Capacitance C
CC
V
= 0 8.5 8.5 pF
CC
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Min Typ Min Unit
Offset Voltage V
OS
(@ VCB = 15 V, IC = 10 A, –55ⴗC ≤ TA ≤ +125ⴗC, unless otherwise noted.)
MAT01AH MAT01GH
0.06 0.15 0.14 0.70 mV
Average Offset
Voltage Drift TCV
Offset Current I
OS
OS
(Note 6) 0.15 0.50 0.35 1.8 µV/°C
0.9 8.0 1.5 15.0 nA
Average Offset
Current Drift TCI
Bias Current Ι
Current Gain h
Collector-Base I
OS
Β
FE
CBO
Leakage Current I
Collector-Emitter I
CES
Leakage Current V
Collector-Collector I
CC
(Note 7) 10 90 15 150 pA/°C
28 60 36 130 nA
167 400 77 300
TA = 125°C, VCB = 30 V,
4
= 0
E
TA = 125°C, VCE = 30 V,
BE
= 0
4, 6
15 80 25 200 nA
50 300 90 400 nA
TA = 125°C, VCC = 30 V,
Leakage Current (Note 6) 30 200 50 400 nA
–2–
REV. B
MAT01
TYPICAL ELECTRICAL CHARACTERISTICS
(@ VCB = 15 V and IC = 10 A, TA = +25ⴗC, unless otherwise noted.)
MAT01N
Parameter Symbol Conditions Typical Unit
Average Offset Voltage Drift TCV
Average Offset Current Drift TCI
OS
OS
0.35 µV/°C
15 pA/°C
Collector-Emitter-Leakage
Current I
CES
VCE = 30 V, VBE = 0 90 pA
Collector-Base-Leakage
Current I
Gain Bandwidth Product f
CBO
T
Offset Voltage Stability ∆V
/T First Month (Note 1) 2.0 µV/Mo
OS
VCB = 30 V, IE = 0 25 pA
VCE = 10 V, IC = 10 mA 450 MHz
Long-Term (Note 2) 0.2 µV/Mo
NOTES
1
Exclude first hour of operation to allow for stabilization.
2
Parameter describes long-term average drift after first month of operation.
3
Sample tested.
4
The collector-base (I
reduced by a factor of two to ten times by connecting the substrate (package) to
a potential which is lower than either collector voltage.
5
ICC and I
6
Guaranteed by VOS test (TCVOS ≅
7
Guaranteed by IOS test limits over temperature.
Specifications subject to change without notice.
are guaranteed by measurement of I
CES
) and collector-emitter (I
CBO
V
OS
for VOS VBE) T = 298°K for TA = 25°C.
T
) leakage currents may be
CES
.
CBO
REV. B
–3–
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