Analog Devices AMP04GBC, AMP04FS-REEL7, AMP04FS-REEL, AMP04FS, AMP04FP Datasheet

REV. B

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a

AMP04*

FUNCTIONAL BLOCK DIAGRAM

IN(–)

IN(+)

INPUT BUFFERS

REF

100k

11k

11k

R

GAIN

V

OUT

100k

FEATURES
Single Supply Operation
Low Supply Current: 700 A Max
Wide Gain Range: 1 to 1000
Low Offset Voltage: 150 V Max
Zero-In/Zero-Out
Single-Resistor Gain Set
8-Lead Mini-DIP and SO Packages

APPLICATIONS
Strain Gages
Thermocouples
RTDs
Battery-Powered Equipment
Medical Instrumentation
Data Acquisition Systems
PC-Based Instruments
Portable Instrumentation

Precision Single Supply

Instrumentation Amplifier

GENERAL DESCRIPTION

The AMP04 is a single-supply instrumentation amplifier
designed to work over a +5 volt to ±15 volt supply range. It
offers an excellent combination of accuracy, low power con­sumption, wide input voltage range, and excellent gain
performance.

Gain is set by a single external resistor and can be from 1 to

1000. Input common-mode voltage range allows the AMP04 to
handle signals with full accuracy from ground to within 1 volt of
the positive supply. And the output can swing to within 1 volt of
the positive supply. Gain bandwidth is over 700 kHz. In addi­tion to being easy to use, the AMP04 draws only 700 µA of
supply current.

For high resolution data acquisition systems, laser trimming of
low drift thin-film resistors limits the input offset voltage to
under 150 µV, and allows the AMP04 to offer gain nonlinearity
of 0.005% and a gain tempco of 30 ppm/°C.

A proprietary input structure limits input offset currents to
less than 5 nA with drift of only 8 pA/°C, allowing direct con­nection of the AMP04 to high impedance transducers and
other signal sources.

The AMP04 is specified over the extended industrial (–40°C to
+85°C) temperature range. AMP04s are available in plastic and
ceramic DIP plus SO-8 surface mount packages.

Contact your local sales office for MIL-STD-883 data sheet
and availability.

PIN CONNECTIONS

8-Lead Epoxy DIP

(P Suffix)

8-Lead Narrow-Body SO

(S Suffix)

*Protected by U.S. Patent No. 5,075,633.

1

2

3

4

8

7

6

5

AMP04

R

GAIN

V+

V

OUT

REF

R

GAIN

–IN

+IN

V–

AMP04

V+

R

GAIN

V

OUT

REF

R

GAIN

–IN

+IN

V–

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 2000

AMP04–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

AMP04E AMP04F

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

OFFSET VOLTAGE

Input Offset Voltage V

IOS

30 150 300 µV

–40°C ≤ T

A

≤ +85°C 300 600 µV

Input Offset Voltage Drift TCV

IOS

36µV/°C

Output Offset Voltage V

OOS

0.5 1.5 3 mV

–40°C ≤ T

A

≤ +85°C3 6mV

Output Offset Voltage Drift TCV

OOS

30 50 µV/°C

INPUT CURRENT

Input Bias Current I

B

22 30 40 nA

–40°C ≤ T

A

≤ +85°C50 60nA

Input Bias Current Drift TCI

B

65 65 pA/°C

Input Offset Current I

OS

15 10nA

–40°C ≤ T

A

≤ +85°C10 15nA

Input Offset Current Drift TCI

OS

8 8 pA/°C

INPUT

Common-Mode Input Resistance 4 4 GΩ
Differential Input Resistance 4 4 GΩ
Input Voltage Range V

IN

0 3.0 0 3.0 V

Common-Mode Rejection CMR 0 V ≤ V

CM

≤ 3.0 V

G = 1 60 80 55 dB
G = 10 80 100 75 dB
G = 100 90 105 80 dB
G = 1000 90 105 80 dB

Common-Mode Rejection CMR 0 V ≤ V

CM

≤ 2.5 V

–40°C ≤ T

A

≤ +85°C

G = 1 55 50 dB
G = 10 75 70 dB
G = 100 85 75 dB
G = 1000 85 75 dB

Power Supply Rejection PSRR 4.0 V ≤ V

S

≤ 12 V

–40°C ≤ T

A

≤ +85°C

G = 1 95 85 dB
G = 10 105 95 dB
G = 100 105 95 dB
G = 1000 105 95 dB

GAIN (G = 100 K/R

GAIN

)

Gain Equation Accuracy G = 1 to 100 0.2 0.5 0.75 %

G = 1 to 100
–40°C ≤ T

A

≤ +85°C 0.8 1.0 %

G = 1000 0.4 0.75 %
Gain Range G 1 1000 1 1000 V/V
Nonlinearity G = 1, R

L

= 5 kΩ 0.005 %

G = 10, R

L

= 5 kΩ 0.015 %

G = 100, R

L

= 5 kΩ 0.025 %

Gain Temperature Coefficient ∆G/∆T 30 50 ppm/°C

OUTPUT

Output Voltage Swing High V

OH

RL = 2 kΩ 4.0 4.2 4.0 V

R

L

= 2 kΩ

–40°C ≤ T

A

≤ +85°C 3.8 3.8 V

Output Voltage Swing Low V

OL

RL = 2 kΩ

–40°C ≤ T

A

≤ +85°C 2.0 2.5 mV

Output Current Limit Sink 30 30 mA

Source 15 15 mA

REV. B

–2–

(VS = 5 V, VCM = 2.5 V, TA = 25C unless otherwise noted)

AMP04

REV. B

–3–

AMP04E AMP04F

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

NOISE

Noise Voltage Density, RTI e

N

f = 1 kHz, G = 1 270 270 nV/√Hz
f = 1 kHz, G = 10 45 45 nV/√Hz
f = 100 Hz, G = 100 30 30 nV/√Hz
f = 100 Hz, G = 1000 25 25 nV/√Hz

Noise Current Density, RTI i

N

f = 100 Hz, G = 100 4 4 pA/√Hz

Input Noise Voltage e

N

p-p 0.1 Hz to 10 Hz, G = 1 7 7 µV p-p

0.1 Hz to 10 Hz, G = 10 1.5 1.5 µV p-p

0.1 Hz to 10 Hz, G = 100 0.7 0.7 µV p-p

DYNAMIC RESPONSE

Small Signal Bandwidth BW G = 1, –3 dB 300 300 kHz

POWER SUPPLY

Supply Current I

SY

550 700 700 µA

–40°C ≤ TA ≤ +85°C 850 850 µA

Specifications subject to change without notice.

ELECTRICAL CHARACTERISTICS

AMP04E AMP04F

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

OFFSET VOLTAGE

Input Offset Voltage V

IOS

80 400 600 µV

–40°C ≤ T

A

≤ +85°C 600 900 µV

Input Offset Voltage Drift TCV

IOS

36µV/°C

Output Offset Voltage V

OOS

13 6 mV

–40°C ≤ T

A

≤ +85°C6 9mV

Output Offset Voltage Drift TCV

OOS

30 50 µV/°C

INPUT CURRENT

Input Bias Current I

B

17 30 40 nA

–40°C ≤ T

A

≤ +85°C50 60nA

Input Bias Current Drift TCI

B

65 65 pA/°C

Input Offset Current I

OS

25 10nA

–40°C ≤ T

A

≤ +85°C15 20nA

Input Offset Current Drift TCI

OS

28 28 pA/°C

INPUT

Common-Mode Input Resistance 4 4 GΩ
Differential Input Resistance 4 4 GΩ
Input Voltage Range V

IN

–12 +12 –12 +12 V

Common-Mode Rejection CMR –12 V ≤ V

CM

≤ +12 V

G = 1 60 80 55 dB
G = 10 80 100 75 dB
G = 100 90 105 80 dB
G = 1000 90 105 80 dB

Common-Mode Rejection CMR –11 V ≤ V

CM

≤ +11 V

–40°C ≤ T

A

≤ +85°C

G = 1 55 50 dB
G = 10 75 70 dB
G = 100 85 75 dB
G = 1000 85 75 dB

Power Supply Rejection PSRR ± 2.5 V ≤ V

S

≤ ± 18 V

–40°C ≤ T

A

≤ +85°C

G = 1 75 70 dB
G = 10 90 80 dB
G = 100 95 85 dB
G = 1000 95 85 dB

(VS = 15 V, VCM = 0 V, TA = 25C unless otherwise noted)

AMP04

REV. B

–4–

AMP04E AMP04F

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

GAIN (G = 100 K/R

GAIN

)

Gain Equation Accuracy G = 1 to 100 0.2 0.5 0.75 %

G = 1000 0.4 0.75 %

G = 1 to 100

–40°C ≤ T

A

≤ +85°C 0.8 1.0 %

Gain Range G 1 1000 1 1000 V/V
Nonlinearity G = 1, R

L

= 5 kΩ 0.005 0.005 %

G = 10, R

L

= 5 kΩ 0.015 0.015 %

G = 100, R

L

= 5 kΩ 0.025 0.025 %

Gain Temperature Coefficient ∆G/∆T 30 50 ppm/°C

OUTPUT

Output Voltage Swing High V

OH

RL = 2 kΩ 13 13.4 13 V

R

L

= 2 kΩ

–40°C ≤ T

A

≤ +85°C 12.5 12.5 V

Output Voltage Swing Low V

OL

RL = 2 kΩ

–40°C ≤ T

A

≤ +85°C –14.5 –14.5 V

Output Current Limit Sink 30 30 mA

Source 15 15 mA

NOISE

Noise Voltage Density, RTI e

N

f = 1 kHz, G = 1 270 270 nV/√Hz

f = 1 kHz, G = 10 45 45 nV/√Hz

f = 100 Hz, G = 100 30 30 nV/√Hz

f = 100 Hz, G = 1000 25 25 nV/√Hz
Noise Current Density, RTI i

N

f = 100 Hz, G = 100 4 4 pA/√Hz
Input Noise Voltage e

N

p-p 0.1 Hz to 10 Hz, G = 1 5 5 µV p-p

0.1 Hz to 10 Hz, G = 10 1 1 µV p-p

0.1 Hz to 10 Hz, G = 100 0.5 0.5 µV p-p

DYNAMIC RESPONSE

Small Signal Bandwidth BW G = 1, –3 dB 700 700 kHz

POWER SUPPLY

Supply Current I

SY

750 900 900 µA

–40°C ≤ TA ≤ +85°C 1100 1100 µA

Specifications subject to change without notice.

WAFER TEST LIMITS

Parameter Symbol Conditions Limit Unit

OFFSET VOLTAGE

Input Offset Voltage V

IOS

300 µV max

Output Offset Voltage V

OOS

3mV max

INPUT CURRENT

Input Bias Current I

B

40 nA max

Input Offset Current I

OS

10 nA max

INPUT

Common-Mode Rejection CMR 0 V ≤ VCM ≤ 3.0 V

G = 1 55 dB min
G = 10 75 dB min
G = 100 80 dB min
G = 1000 80 dB min

Common-Mode Rejection CMR V

S

= ±15 V, –12 V ≤ VCM ≤ +12 V

G = 1 55 dB min
G = 10 75 dB min
G = 100 80 dB min

(VS = 5 V, VCM = 2.5 V, TA = 25C unless otherwise noted)

AMP04

REV. B

–5–

Parameter Symbol Conditions Limit Unit

G = 1000 80 dB min

Power Supply Rejection PSRR 4.0 V ≤ V

S

≤ 12 V

G = 1 85 dB min
G = 10 95 dB min
G = 100 95 dB min
G = 1000 95 dB min

GAIN (G = 100 K/R

GAIN

)

Gain Equation Accuracy G = 1 to 100 0.75 % max

OUTPUT

Output Voltage Swing High V

OH

RL = 2 kΩ 4.0 V min

Output Voltage Swing Low V

OL

RL = 2 kΩ 2.5 mV max

POWER SUPPLY

Supply Current I

SY

VS = ±15 900 µA max

700 µA max

NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18 V

Common-Mode Input Voltage

2

. . . . . . . . . . . . . . . . . . . ± 18 V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 36 V

Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite

Storage Temperature Range

Z Package . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Operating Temperature Range

AMP04A . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C

AMP04E, F . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Junction Temperature Range

Z Package . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C

Package Type 

JA

3



JC

Unit

8-Lead Cerdip (Z) 148 16 °C/W
8-Lead Plastic DIP (P) 103 43 °C/W
8-Lead SOIC (S) 158 43 °C/W

NOTES

1

Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.

2

For supply voltages less than ± 18 V, the absolute maximum input voltage is
equal to the supply voltage.

3

θJA is specified for the worst case conditions, i.e., θJA is specified for device in

socket for cerdip, P-DIP, and LCC packages; θJA is specified for device
soldered in circuit board for SOIC package.

ORDERING GUIDE

Temperature VOS @ 5 V Package Package

Model Range TA = 25C Description Option

AMP04EP XIND 150 µV Plastic DIP N-8
AMP04ES XIND 150 µV SOIC SO-8
AMP04ES-REEL7 XIND 150 µV SOIC SO-8
AMP04FP XIND 300 µV Plastic DIP N-8
AMP04FS XIND 300 µV SOIC SO-8
AMP04FS-REEL XIND 150 µV SOIC SO-8
AMP04FS-REEL7 XIND 150 µV SOIC SO-8
AMP04GBC 25°C 300 µV

DICE CHARACTERISTICS

R

GAIN

1

R

GAIN

8

7 V+

6 V

OUT

5 REF

–IN 2

+IN 3

V– 4

AMP04 Die Size 0.075 × 0.99 inch, 7,425 sq. mils.
Substrate (Die Backside) Is Connected to V+.
Transistor Count, 81.