Analog Devices AMP04 b Datasheet

Precision Single Supply

1

2

3

4

8

7

6

5

AMP04

R

GAIN

V+

V

OUT

REF

R

GAIN

–IN

+IN

V–

AMP04

V+

R

GAIN

V

OUT

REF

R

GAIN

–IN

+IN

V–

a

FEATURES
Single Supply Operation
Low Supply Current: 700 A Max
Wide Gain Range: 1 to 1000
Low Offset Voltage: 150 V Max
Zero-In/Zero-Out
Single-Resistor Gain Set
8-Lead Mini-DIP and SO Packages

APPLICATIONS
Strain Gages
Thermocouples
RTDs
Battery-Powered Equipment
Medical Instrumentation
Data Acquisition Systems
PC-Based Instruments
Portable Instrumentation

GENERAL DESCRIPTION

The AMP04 is a single-supply instrumentation amplifier
designed to work over a +5 volt to ±15 volt supply range. It
offers an excellent combination of accuracy, low power con­sumption, wide input voltage range, and excellent gain
performance.

Gain is set by a single external resistor and can be from 1 to

1000. Input common-mode voltage range allows the AMP04 to
handle signals with full accuracy from ground to within 1 volt of
the positive supply. And the output can swing to within 1 volt of
the positive supply. Gain bandwidth is over 700 kHz. In addi­tion to being easy to use, the AMP04 draws only 700 µA of
supply current.

For high resolution data acquisition systems, laser trimming of
low drift thin-film resistors limits the input offset voltage to
under 150 µV, and allows the AMP04 to offer gain nonlinearity
of 0.005% and a gain tempco of 30 ppm/°C.

A proprietary input structure limits input offset currents to
less than 5 nA with drift of only 8 pA/°C, allowing direct con­nection of the AMP04 to high impedance transducers and
other signal sources.

Instrumentation Amplifier

AMP04*

FUNCTIONAL BLOCK DIAGRAM

100k

R

100k

11k

GAIN

11k

8-Lead Narrow-Body SO

(S Suffix)

V

OUT

IN(–)

INPUT BUFFERS

IN(+)

REF

The AMP04 is specified over the extended industrial (–40°C to
+85°C) temperature range. AMP04s are available in plastic and
ceramic DIP plus SO-8 surface mount packages.

Contact your local sales office for MIL-STD-883 data sheet
and availability.

PIN CONNECTIONS

8-Lead Epoxy DIP

(P Suffix)

*Protected by U.S. Patent No. 5,075,633.

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 2000

AMP04–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(VS = 5 V, VCM = 2.5 V, TA = 25C unless otherwise noted)

AMP04E AMP04F

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

OFFSET VOLTAGE

Input Offset Voltage V

IOS

Input Offset Voltage Drift TCV
Output Offset Voltage V

OOS

Output Offset Voltage Drift TCV

IOS

OOS

–40°C ≤ T

–40°C ≤ T

≤ +85°C 300 600 µV

A

≤ +85°C3 6mV

A

30 150 300 µV

36µV/°C

0.5 1.5 3 mV

30 50 µV/°C

INPUT CURRENT

Input Bias Current I

B

Input Bias Current Drift TCI
Input Offset Current I

OS

Input Offset Current Drift TCI

B

OS

–40°C ≤ T

–40°C ≤ T

≤ +85°C50 60nA

A

≤ +85°C10 15nA

A

22 30 40 nA

65 65 pA/°C
15 10nA

8 8 pA/°C

INPUT

Common-Mode Input Resistance 4 4 GΩ
Differential Input Resistance 4 4 GΩ
Input Voltage Range V

IN

Common-Mode Rejection CMR 0 V ≤ V

≤ 3.0 V

CM

0 3.0 0 3.0 V

G = 1 60 80 55 dB
G = 10 80 100 75 dB
G = 100 90 105 80 dB
G = 1000 90 105 80 dB

Common-Mode Rejection CMR 0 V ≤ V

–40°C ≤ T

≤ 2.5 V

CM

A

≤ +85°C

G = 1 55 50 dB
G = 10 75 70 dB
G = 100 85 75 dB
G = 1000 85 75 dB

Power Supply Rejection PSRR 4.0 V ≤ V

–40°C ≤ T

≤ 12 V

S

≤ +85°C

A

G = 1 95 85 dB
G = 10 105 95 dB
G = 100 105 95 dB
G = 1000 105 95 dB

GAIN (G = 100 K/R

GAIN

)

Gain Equation Accuracy G = 1 to 100 0.2 0.5 0.75 %

G = 1 to 100
–40°C ≤ T

≤ +85°C 0.8 1.0 %

A

G = 1000 0.4 0.75 %
Gain Range G 1 1000 1 1000 V/V
Nonlinearity G = 1, R

G = 10, R

G = 100, R

= 5 kΩ 0.005 %

L

= 5 kΩ 0.015 %

L

= 5 kΩ 0.025 %

L

Gain Temperature Coefficient ∆G/∆T 30 50 ppm/°C

OUTPUT

Output Voltage Swing High V

Output Voltage Swing Low V

OH

OL

RL = 2 kΩ 4.0 4.2 4.0 V

R

= 2 kΩ

L

–40°C ≤ T

≤ +85°C 3.8 3.8 V

A

RL = 2 kΩ

–40°C ≤ T

≤ +85°C 2.0 2.5 mV

A

Output Current Limit Sink 30 30 mA

Source 15 15 mA

–2–

REV. B

AMP04

AMP04E AMP04F

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

NOISE

Noise Voltage Density, RTI e

Noise Current Density, RTI i
Input Noise Voltage e

N

N

p-p 0.1 Hz to 10 Hz, G = 1 7 7 µV p-p

N

DYNAMIC RESPONSE

Small Signal Bandwidth BW G = 1, –3 dB 300 300 kHz

POWER SUPPLY

Supply Current I

Specifications subject to change without notice.

SY

f = 1 kHz, G = 1 270 270 nV/√Hz
f = 1 kHz, G = 10 45 45 nV/√Hz
f = 100 Hz, G = 100 30 30 nV/√Hz
f = 100 Hz, G = 1000 25 25 nV/√Hz
f = 100 Hz, G = 100 4 4 pA/√Hz

0.1 Hz to 10 Hz, G = 10 1.5 1.5 µV p-p

0.1 Hz to 10 Hz, G = 100 0.7 0.7 µV p-p

550 700 700 µA

–40°C ≤ TA ≤ +85°C 850 850 µA

ELECTRICAL CHARACTERISTICS

(VS = 15 V, VCM = 0 V, TA = 25C unless otherwise noted)

AMP04E AMP04F

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

OFFSET VOLTAGE

Input Offset Voltage V

IOS

Input Offset Voltage Drift TCV
Output Offset Voltage V

OOS

Output Offset Voltage Drift TCV

IOS

OOS

–40°C ≤ T

–40°C ≤ T

≤ +85°C 600 900 µV

A

≤ +85°C6 9mV

A

80 400 600 µV

36µV/°C

13 6 mV

30 50 µV/°C

INPUT CURRENT

Input Bias Current I

B

Input Bias Current Drift TCI
Input Offset Current I

OS

Input Offset Current Drift TCI

B

OS

–40°C ≤ T

–40°C ≤ T

≤ +85°C50 60nA

A

≤ +85°C15 20nA

A

17 30 40 nA

65 65 pA/°C
25 10nA

28 28 pA/°C

INPUT

Common-Mode Input Resistance 4 4 GΩ
Differential Input Resistance 4 4 GΩ
Input Voltage Range V

IN

Common-Mode Rejection CMR –12 V ≤ V

≤ +12 V

CM

–12 +12 –12 +12 V

G = 1 60 80 55 dB
G = 10 80 100 75 dB
G = 100 90 105 80 dB
G = 1000 90 105 80 dB

Common-Mode Rejection CMR –11 V ≤ V

–40°C ≤ T

≤ +11 V

CM

≤ +85°C

A

G = 1 55 50 dB
G = 10 75 70 dB
G = 100 85 75 dB
G = 1000 85 75 dB

Power Supply Rejection PSRR ± 2.5 V ≤ V

–40°C ≤ T

≤ ± 18 V

S

≤ +85°C

A

G = 1 75 70 dB
G = 10 90 80 dB
G = 100 95 85 dB
G = 1000 95 85 dB

REV. B

–3–

AMP04

AMP04E AMP04F

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

GAIN (G = 100 K/R

Gain Equation Accuracy G = 1 to 100 0.2 0.5 0.75 %

Gain Range G 1 1000 1 1000 V/V
Nonlinearity G = 1, R

Gain Temperature Coefficient ∆G/∆T 30 50 ppm/°C

OUTPUT

Output Voltage Swing High V

Output Voltage Swing Low V

Output Current Limit Sink 30 30 mA

NOISE

Noise Voltage Density, RTI e

Noise Current Density, RTI i
Input Noise Voltage e

DYNAMIC RESPONSE

Small Signal Bandwidth BW G = 1, –3 dB 700 700 kHz

POWER SUPPLY

Supply Current I

Specifications subject to change without notice.

GAIN

)

G = 1000 0.4 0.75 %

G = 1 to 100

≤ +85°C 0.8 1.0 %

A

= 5 kΩ 0.005 0.005 %

L

= 5 kΩ 0.015 0.015 %

L

= 5 kΩ 0.025 0.025 %

L

≤ +85°C 12.5 12.5 V

A

≤ +85°C –14.5 –14.5 V

A

OH

OL

–40°C ≤ T

G = 10, R

G = 100, R

RL = 2 kΩ 13 13.4 13 V

= 2 kΩ

R

L

–40°C ≤ T

RL = 2 kΩ

–40°C ≤ T

Source 15 15 mA

N

f = 1 kHz, G = 1 270 270 nV/√Hz

f = 1 kHz, G = 10 45 45 nV/√Hz

f = 100 Hz, G = 100 30 30 nV/√Hz

f = 100 Hz, G = 1000 25 25 nV/√Hz

N

p-p 0.1 Hz to 10 Hz, G = 1 5 5 µV p-p

N

f = 100 Hz, G = 100 4 4 pA/√Hz

0.1 Hz to 10 Hz, G = 10 1 1 µV p-p

0.1 Hz to 10 Hz, G = 100 0.5 0.5 µV p-p

SY

750 900 900 µA

–40°C ≤ TA ≤ +85°C 1100 1100 µA

WAFER TEST LIMITS

(VS = 5 V, VCM = 2.5 V, TA = 25C unless otherwise noted)

Parameter Symbol Conditions Limit Unit

OFFSET VOLTAGE

Input Offset Voltage V
Output Offset Voltage V

IOS

OOS

300 µV max
3mV max

INPUT CURRENT

Input Bias Current I
Input Offset Current I

B

OS

40 nA max
10 nA max

INPUT

Common-Mode Rejection CMR 0 V ≤ VCM ≤ 3.0 V

G = 1 55 dB min
G = 10 75 dB min
G = 100 80 dB min
G = 1000 80 dB min

Common-Mode Rejection CMR V

= ±15 V, –12 V ≤ VCM ≤ +12 V

S

G = 1 55 dB min
G = 10 75 dB min
G = 100 80 dB min

–4–

REV. B

AMP04

Parameter Symbol Conditions Limit Unit

G = 1000 80 dB min

Power Supply Rejection PSRR 4.0 V ≤ V

G = 1 85 dB min
G = 10 95 dB min
G = 100 95 dB min
G = 1000 95 dB min

GAIN (G = 100 K/R

GAIN

)

Gain Equation Accuracy G = 1 to 100 0.75 % max

OUTPUT

Output Voltage Swing High V
Output Voltage Swing Low V

OH

OL

RL = 2 kΩ 4.0 V min
RL = 2 kΩ 2.5 mV max

POWER SUPPLY

Supply Current I

NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

SY

VS = ±15 900 µA max

≤ 12 V

S

700 µA max

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18 V

Common-Mode Input Voltage

1

2

. . . . . . . . . . . . . . . . . . . ± 18 V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 36 V

Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite

Storage Temperature Range

Z Package . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Operating Temperature Range

AMP04A . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C

AMP04E, F . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Junction Temperature Range

Z Package . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +175°C

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C

Package Type 

3

JA



JC

Unit

8-Lead Cerdip (Z) 148 16 °C/W
8-Lead Plastic DIP (P) 103 43 °C/W
8-Lead SOIC (S) 158 43 °C/W

NOTES

1

Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.

2

For supply voltages less than ± 18 V, the absolute maximum input voltage is
equal to the supply voltage.

3

θJA is specified for the worst case conditions, i.e., θJA is specified for device in

socket for cerdip, P-DIP, and LCC packages; θJA is specified for device
soldered in circuit board for SOIC package.

DICE CHARACTERISTICS

–IN 2

+IN 3

V– 4

R

GAIN

1

R

GAIN

8

7 V+

6 V

5 REF

OUT

AMP04 Die Size 0.075 × 0.99 inch, 7,425 sq. mils.
Substrate (Die Backside) Is Connected to V+.
Transistor Count, 81.

REV. B

ORDERING GUIDE

Temperature VOS @ 5 V Package Package

Model Range TA = 25C Description Option

AMP04EP XIND 150 µV Plastic DIP N-8
AMP04ES XIND 150 µV SOIC SO-8
AMP04ES-REEL7 XIND 150 µV SOIC SO-8
AMP04FP XIND 300 µV Plastic DIP N-8
AMP04FS XIND 300 µV SOIC SO-8
AMP04FS-REEL XIND 150 µV SOIC SO-8
AMP04FS-REEL7 XIND 150 µV SOIC SO-8
AMP04GBC 25°C 300 µV

–5–