Analog Devices AMP03GS-REEL, AMP03GS, AMP03GP, AMP03GBC, AMP03FJ Datasheet

Precision, Unity-Gain

a

FEATURES
High CMRR: 100 dB Typ
Low Nonlinearity: 0.001% Max
Low Distortion: 0.001% Typ
Wide Bandwidth: 3 MHz Typ
Fast Slew Rate: 9.5 V/ms Typ
Fast Settling (0.01%): 1 ms Typ
Low Cost

APPLICATIONS
Summing Amplifiers
Instrumentation Amplifiers
Balanced Line Receivers
Current-Voltage Conversion
Absolute Value Amplifier
4 mA–20 mA Current Transmitter
Precision Voltage Reference Applications
Lower Cost and Higher Speed Version of INA105

GENERAL DESCRIPTION

The AMP03 is a monolithic unity-gain, high speed differential
amplifier. Incorporating a matched thin-film resistor network,
the AMP03 features stable operation over temperature without
requiring expensive external matched components. The AMP03
is a basic analog building block for differential amplifier and
instrumentation applications.

The differential amplifier topology of the AMP03 serves to both
amplify the difference between two signals and provide extremely
high rejection of the common-mode input voltage. By providing
common-mode rejection (CMR) of 100 dB typical, the AMP03
solves common problems encountered in instrumentation design.
As an example, the AMP03 is ideal for performing either addi­tion or subtraction of two signals without using expensive
externally-matched precision resistors. The large common­mode rejection is made possible by matching the internal resistors
to better than 0.002% and maintaining a thermally symmetric
layout. Additionally, due to high CMR over frequency, the
AMP03 is an ideal general amplifier for buffering signals in a
noisy environment into data acquisition systems.

The AMP03 is a higher speed alternative to the INA105. Fea-

turing slew rates of 9.5 V/µs, and a bandwidth of 3 MHz, the

AMP03 offers superior performance for high speed current
sources, absolute value amplifiers and summing amplifiers than
the INA105.

Differential Amplifier

AMP03

FUNCTIONAL BLOCK DIAGRAM

AMP03

AMP03

AMP03

NC

8

4

V–

25kV

25kV

8
7
6
5

8
7
6
5

NC
V+
OUTPUT
SENSE

NC
V+
OUTPUT
SENSE

7 V+

6 OUTPUT

5 SENSE

5

SENSE

+V

7

CC

6

OUTPUT

–V

4

EE

1

REFERENCE

25kV

2

–IN

25kV

+IN

3

PIN CONNECTIONS

8-Lead Plastic DIP

(P Suffix)

REFERENCE

1
2

–IN

TOP VIEW

(Not to Scale)

3

+IN

4

V–

NC = NO CONNECT

8-Lead SOIC

(S Suffix)

REFERENCE

1
2

–IN

TOP VIEW

(Not to Scale)

3

+IN

4

V–

NC = NO CONNECT

Header

(J Suffix)

REFERENCE 1

–IN 2

+IN 3

NC = NO CONNECT

REV. E

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1999

AMP03–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(@ VS = 615 V, TA = +258C, unless otherwise noted)

AMP03F AMP03B AMP03G

Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Units

Offset Voltage V

OS

Gain Error No Load, V

V

= 0 V –400 10 400 –700 20 700 –750 25 750 µV

CM

= 0 Ω 0.00004 0.008 0.00004 0.008 0.001 0.008 %

R

S

= ±10 V,

IN

Input Voltage Range IVR (Note 1) ±10 ±10 ±10 V

Common-Mode Rejection CMR V
Power Supply Rejection Ratio PSRR V
Output Swing V
Short-Circuit Current Limit I

O

SC

= ±10 V 85 100 80 95 80 95 dB

CM

= ±6 V to ±18 V 0.6 10 0.6 10 0.7 10 µV/V

S

R

= 2 kΩ±12 ±13.7 ±12 ±13.7 ±12 ±13.7 V

L

Output Shorted
to Ground +45/–15 +45/–15 +45/–15 mA

Small-Signal Bandwidth

(–3 dB) BW R

Slew Rate SR R

= 2 kΩ 3 3 3 MHz

L

= 2 kΩ 6 9.5 6 9.5 6 9.5 V/µs

L

Capacitive Load Drive

Capability C

Supply Current I

NOTES

1

Input voltage range guaranteed by CMR test.

Specifications subject to change without notice.

L

SY

ELECTRICAL CHARACTERISTICS

No Oscillation 300 300 300 pF
No Load 2.5 3.5 2.5 3.5 2.5 3.5 mA

(@ V

= 615 V, –558C ≤ TA ≤ +1258C for B Grade)

S

AMP03B

Parameter Symbol Conditions Min Typ Max Units

Offset Voltage V

OS

Gain Error No Load, V

V

= 0 V –1500 150 1500 µV

CM

= ±10 V, RS = 0 Ω 0.0014 0.02 %

IN

Input Voltage Range IVR ±20 V

Common-Mode Rejection CMR V

= ±10 V 75 95 dB

CM

Power Supply Rejection

Ratio PSRR V

Output Swing V

O

Slew Rate SR R
Supply Current I

Specifications subject to change without notice.

SY

= ±6 V to ±18 V 0.7 20 µV/V

S

R

= 2 kΩ±12 ±13.7 V

L

= 2 kΩ 9.5 V/µs

L

No Load 3.0 4.0 mA

ELECTRICAL CHARACTERISTICS

(@ V

= 615 V, –408C ≤ TA ≤ +858C for F and G Grades)

S

AMP03F AMP03G

Parameter Symbol Conditions Min Typ Max Min Typ Max Units

Offset Voltage V

OS

Gain Error No Load, V

V

= 0 V –1000 100 1000 –2000 200 2000 µV

CM

= ±10 V, RS = 0 Ω 0.0008 0.015 0.002 0.02 %

IN

Input Voltage Range IVR ±20 ± 20 V

Common-Mode Rejection CMR V

= ±10 V 8095 7590 dB

CM

Power Supply Rejection

Ratio PSRR V

Output Swing V

O

Slew Rate SR R
Supply Current I

Specifications subject to change without notice.

SY

= ±6 V to ±18 V 0.7 15 1.0 15 µV/V

S

R

= 2 kΩ±12 ±13.7 ±12 ±13.7 V

L

= 2 kΩ 9.5 9.5 V/µs

L

No Load 2.6 4.0 2.6 4.0 mA

–2–

REV. E

AMP03

1. Reference

2. –IN

3. +IN

4. V–

5. SENSE

6. OUTPUT

7. V+

8. NC

DIE SIZE 0.076 3 0.076 inch, 5,776 sq. mils

(1.93 3 1.93 mm, 3.73 sq. mm)

AMP03

+15V

–15V

0.1mF

0.1mF

VIN = 610V

V

OUT

= 610V

WAFER TEST LIMITS

(@ VS = 615 V, TA = +258C, unless otherwise noted)

AMP03BC

Parameter Symbol Conditions Limit Units

V

Offset Voltage V

OS

Gain Error No Load, V

= ±18 V 0.5 mV max

S

= ±10 V, RS = 0 Ω 0.008 % max

IN

Input Voltage Range IVR ±10 V min

Common-Mode Rejection CMR V
Power Supply Rejection Ratio PSRR V
Output Swing V
Short-Circuit Current Limit I
Supply Current I

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V

Input Voltage

2

. . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage

O

SC

SY

1

= ±10 V 80 dB min

CM

= ±6 V to ±18 V 8 µV/V max

S

R

= 2 kΩ±12 V max

L

Output Shorted to Ground +45/–15 mA min
No Load 3.5 mA max

DICE CHARACTERISTICS

Output Short-Circuit Duration . . . . . . . . . . . . . . Continuous

Storage Temperature Range

P, J Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . +300°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Operating Temperature Range

AMP03B . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C

AMP03F, AMP03G . . . . . . . . . . . . . . . . . . –40°C to +85°C

Package Type u

3

JA

u

JC

Units

Header (J) 150 18 °C/W
8-Lead Plastic DIP (P) 103 43 °C/W
8-Lead SOIC (S) 155 40 °C/W

NOTES

1

Absolute maximum ratings apply to both DICE and packaged parts, unless

otherwise noted.

2

For supply voltages less than ±18 V, the absolute maximum input voltage is equal

to the supply voltage.

3

θJA is specified for worst case mounting conditions, i.e., θJA is specified for device

in socket for header and plastic DIP packages and for device soldered to printed
circuit board for SOIC package.

ORDERING GUIDE

1

Temperature Package Package

Model Range Description Option

AMP03GP –40°C to +85°C 8-Lead Plastic DIP N-8
AMP03BJ –40°C to +85°C Header H-08B
AMP03FJ –40°C to +85°C Header H-08B
AMP03BJ/883C –55°C to +125°C Header H-08B
AMP03GS –40°C to +85°C 8-Lead SOIC SO-8
AMP03GS-REEL –40°C to +85°C 8-Lead SOIC SO-8
5962-9563901MGA –55°C to +125°C Header H-08B

AMP03GBC Die

NOTES

1

Burn-in is available on commercial and industrial temperature range parts in
plastic DIP and header packages.

2

For devices processed in total compliance to MIL-STD-883, add /883 after
part number. Consult factory for /883 data sheet.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AMP03 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

REV. E

BURN-IN CIRCUIT

25kV

2

SLEW RATE TEST CIRCUIT

–3–

+18V

AMP03

25kV25kV

–18V

WARNING!

ESD SENSITIVE DEVICE