Analog Devices AMP02 e Datasheet

High Accuracy

Instrumentation Amplifier

AMP02

FEATURES
Low Offset Voltage: 100 ␮V max
Low Drift: 2 ␮V/ⴗC max
Wide Gain Range: 1 to 10,000
High Common-Mode Rejection: 115 dB min
High Bandwidth (G = 1000): 200 kHz typ
Gain Equation Accuracy: 0.5% max
Single Resistor Gain Set
Input Overvoltage Protection
Low Cost
Available in Die Form

APPLICATIONS
Differential Amplifier
Strain Gage Amplifier
Thermocouple Amplifier
RTD Amplifier
Programmable Gain Instrumentation Amplifier
Medical Instrumentation
Data Acquisition Systems

FUNCTIONAL BLOCK DIAGRAM

8-Lead PDIP and CERDIP

RG

–IN

+IN

1

1

2

3

4

V–

8

RG

2

7

V+

6

OUT

5

REFERENCE

3

+IN

–IN

FOR SOL CONNECT SENSE TO OUTPUT

–

1

RG

R

G

G = = + 1

1

8

RG

2

2

+

V

OUT

(+IN) – (–IN)

Figure 1. Basic Circuit Connections

NC

RG

NC

–IN

+IN

NC

V–

NC

V+

7

4

V–

50k⍀

()

16-Lead SOIC

1

2

1

3

4

5

6

7

8

NC = NO CONNECT

6

5

REFERENCE

R

G

OUT

16

NC

15

RG

2

14

NC

13

V+

12

SENSE

11

OUT

10

REFERENCE

9

NC

GENERAL DESCRIPTION

The AMP02 is the first precision instrumentation amplifier
available in an 8-lead package. Gain of the AMP02 is set by a
single external resistor and can range from 1 to 10,000. No
gain set resistor is required for unity gain. The AMP02 includes
an input protection network that allows the inputs to be taken
60 V beyond either supply rail without damaging the device.

Laser trimming reduces the input offset voltage to under 100 µV.
Output offset voltage is below 4 mV, and gain accuracy is better
than 0.5% for a gain of 1000. ADI’s proprietary thin-film resis­tor process keeps the gain temperature coefficient under 50 ppm/°C.

REV. E

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.

Due to the AMP02’s design, its bandwidth remains very high
over a wide range of gain. Slew rate is over 4 V/µs, making the
AMP02 ideal for fast data acquisition systems.

A reference pin is provided to allow the output to be referenced
to an external dc level. This pin may be used for offset correc­tion or level shifting as required. In the 8-lead package, sense is
internally connected to the output.

For an instrumentation amplifier with the highest precision,
consult the AMP01 data sheet.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © Analog Devices, Inc., 2002. All rights reserved.

AMP02–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(@ VS = ⴞ15 V, VCM = 0 V, TA = 25ⴗC, unless otherwise noted.)

AMP02E AMP02F

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

OFFSET VOLTAGE

Input Offset Voltage V

Input Offset Voltage Drift TCV
Output Offset Voltage V

Output Offset Voltage Drift TCV
Power Supply Rejection PSR VS = ±4.8 V to ±18 V

IOS

IOS

OOS

OOS

TA = 25°C20100 40 200 µV
–40°C ≤ TA ≤ +85°C50200 100 350 µV
–40°C ≤ TA ≤ +85°C 0.5 2 1 4 µV/°C
TA = 25°C1428mV
–40°C ≤ T
–40°C ≤ TA ≤ +85°C50100 100 200 µV/°C

≤ +85°C410920mV

A

G = 100, 1000 115 125 110 115 dB
G = 10 100 110 95 100 dB
G = 1 80 90 75 80 dB

= ±4.8 V to ±18 V

V

S

–40°C ≤ T

G = 1000, 100 110 120 105 110 dB

≤ +85°C

A

G = 10 95 110 90 95 dB
G = 1 75 90 70 75 dB

INPUT CURRENT

Input Bias Current I
Input Bias Current Drift TCI
Input Offset Current I
Input Offset Current Drift TCI

B

OS

B

OS

TA = 25°C210420nA
–40°C ≤ TA ≤ +85°C 150 250 pA/°C
TA = 25°C 1.2 5 2 10 nA
–40°C ≤ TA ≤ +85°C9 15pA/°C

INPUT

Input Resistance R

IN

Input Voltage Range IVR TA = 25°C
Common-Mode Rejection CMR V

Differential, G ≤ 1000 10 10 GΩ
Common Mode, G = 1000 16.5 16.5 GΩ

CM

1

±11 ±11 V

= ±11 V

G = 1000, 100 115 120 110 115 dB
G = 10 100 115 95 110 dB
G = 1 80 95 75 90 dB

VCM = ±11 V
–40°C ≤ TA ≤ +85°C

G = 100, 1000 110 120 105 115 dB
G = 10 95 110 90 105 dB
G = 1 75 90 70 85 dB

GAIN

Gain Equation G = 1000 0.50 0.70 %

Accuracy G =

50 kΩ

+1 G = 100 0.30 0.50 %

R

G

G = 10 0.25 0.40 %

G = 1 0.02 0.05 %
Gain Range G 1 10k 1 10k V/V
Nonlinearity G = 1 to 1000 0.006 0.006 %
Temperature Coefficient G

TC

1 ≤ G ≤ 1000

2, 3

20 50 20 50 ppm/°C

OUTPUT RATING

Output Voltage Swing V

OUT

TA = 25°C, RL = 1 kΩ±12 ±13 ±12 ±13 V

RL = 1 kΩ, –40°C ≤ TA ≤ +85°C ±11 ±12 ±11 ±12 V
Positive Current Limit Output-to-Ground Short 22 22 mA
Negative Current Limit Output-to-Ground Short 32 32 mA

NOISE

Voltage Density, RTI e

n

fO = 1 kHz

G = 1000 9 9 nV/√Hz
G = 100 10 10 nV/√Hz
G = 10 18 18 nV/√Hz
G = 1 120 120 nV/√Hz

Noise Current Density, RTI i
Input Noise Voltage en p-p 0.1 Hz to 10 Hz

n

fO = 1 kHz, G = 1000 0.4 0.4 pA/√Hz

G = 1000 0.4 0.4 µV p-p
G = 100 0.5 0.5 µV p-p
G = 10 1.2 1.2 µV p-p

DYNAMIC RESPONSE

Small-Signal Bandwidth BW G = 1 1200 1200 kHz

(–3 dB) G = 10 300 300 kHz

G = 100, 1000 200 200 kHz
Slew Rate SR G = 10, RL = 1 kΩ 46 4 6 V/µs
Settling Time t

S

To 0.01% ±10 V Step
G = 1 to 1000 10 10 µs

SENSE INPUT

Input Resistance R
Voltage Range ±11 ±11 V

IN

25 25 kΩ

REFERENCE INPUT

Input Resistance R
Voltage Range ±11 ±11 V

IN

50 50 kΩ

Gain to Output 11V/V

REV. E–2–

AMP02

AMP02E AMP02F

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

POWER SUPPLY

Supply Voltage Range V
Supply Current I

NOTES

1

Input voltage range guaranteed by common-mode rejection test.

2

Guaranteed by design.

3

Gain tempco does not include the effects of external component drift.

Specifications subject to change without notice.

S

SY

TA = 25°C5656mA
–40°C ≤ TA ≤ +85°C5656mA

±4.5 ±18 ± 4.5 ±18 V

ABSOLUTE MAXIMUM RATINGS

1, 2

Supply Voltage ±18 V
Common-Mode Input Voltage [(V–) – 60 V] to [(V+) + 60 V]
Differential Input Voltage [(V–) – 60 V] to [(V+) + 60 V]
Output Short-Circuit Duration Continuous
Operating Temperature Range –40°C to +85°C
Storage Temperature Range –65°C to +150°C
Function Temperature Range –65°C to +150°C
Lead Temperature (Soldering, 10 sec) 300°C

Package Type ␪

3

JA

␪

JC

Unit

8-Lead Plastic DIP (P) 96 37 °C/W
16-Lead SOIC (S) 92 27 °C/W

ORDERING GUIDE

V

max @ V

IOS

Model TA = 25ⴗCTA = 25ⴗC Range Description

AMP02EP 100 µV4 mV –40°C to +85°C 8-Lead Plastic DIP
AMP02FP 200 µV8 mV –40°C to +85°C 8-Lead Plastic DIP
AMP02AZ/883C 200 µV 10 mV –55°C to +125°C 8-Lead CERDIP
AMP02FS 200 µV8 mV –40°C to +85°C 16-Lead SOIC
AMP02GBC Die
AMP02FS-REEL 200 µV8 mV –40°C to +85°C 16-Lead SOIC

max @ Temperature Package

OOS

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.

3

θJA is specified for worst case mounting conditions, i.e., θJA is specified for

device in socket for P-DIP package; θJA is specified for device soldered to
printed circuit board for SOIC package.

–IN +IN

RG1R

G2

Figure 2. Simplified Schematic

REV. E

–3–

25k⍀

25k⍀

25k⍀

25k⍀

V+

SENSE

OUT

REFERENCE

V–

AMP02

8

1

DIE SIZE 0.103 inch ⴛ 0.116 inch, 11,948 sq. mils

(2.62 mm ⴛ 2.95 mm, 7.73 sq. mm)

NOTE: PINS 1 and 8 are KELVIN CONNECTED

Die Characteristics

1. RG

1

2. –IN

3. +IN

4. V–

5. REFERENCE

6. OUT

7. V+

8. RG

2

9. SENSE

CONNECT SUBSTRATE TO V–

WAFER TEST LIMITS*

(@ VS = ⴞ15 V, VCM = 0 V, TA = 25ⴗC, unless otherwise noted.)

AMP02 GBC

Parameter Symbol Conditions Limits Unit

Input Offset Voltage V

Output Offset Voltage V

IOS

OOS

= ±4.8 V to ±18 V

V

S

200 µV max

8 mV max

G = 1000 110
Power Supply PSR G = 100 110 dB
Rejection G = 10 95

G = 1 75

Input Bias Current I

Input Offset Current I

B

OS

20 nA max

10 nA max

Input Voltage Range IVR Guaranteed by CMR Tests ± 11 V min

= ±11 V

V

CM

G = 1000 110
Common-Mode CMR G = 100 110 dB
Rejection G = 10 95

G = 1 75

50 kΩ

Gain Equation Accuracy

Output Voltage Swing V

Supply Current I

*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not

guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

OUT

SY

G =

RL = 1 kΩ±12 V min

+1, G =1000

R

G

0.7 % max

6 mA max

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AMP02 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.

REV. E–4–