Analog Devices AMP01NBS, AMP01GS-REEL, AMP01GS, AMP01GBC, AMP01FX Datasheet
...
REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
AMP01*
Low Noise, Precision
Instrumentation Amplifier
GENERAL DESCRIPTION
The AMP01 is a monolithic instrumentation amplifier designed
for high-precision data acquisition and instrumentation applications. The design combines the conventional features of an
instrumentation amplifier with a high current output stage. The
output remains stable with high capacitance loads (1 µF), a
unique ability for an instrumentation amplifier. Consequently,
the AMP01 can amplify low level signals for transmission
through long cables without requiring an output buffer. The output
stage may be configured as a voltage or current generator.
Input offset voltage is very low (20 µV), which generally elimi-
nates the external null potentiometer. Temperature changes
have minimal effect on offset; TCV
IOS
is typically 0.15 µV/°C.
Excellent low-frequency noise performance is achieved with a
minimal compromise on input protection. Bias current is very
low, less than 10 nA over the military temperature range. High
common-mode rejection of 130 dB, 16-bit linearity at a gain of
1000, and 50 mA peak output current are achievable simultaneously. This combination takes the instrumentation amplifier
one step further towards the ideal amplifier.
AC performance complements the superb dc specifications. The
AMP01 slews at 4.5 V/µs into capacitive loads of up to 15 nF,
settles in 50 µs to 0.01% at a gain of 1000, and boasts a healthy
26 MHz gain-bandwidth product. These features make the
AMP01 ideal for high speed data acquisition systems.
Gain is set by the ratio of two external resistors over a range of
0.1 to 10,000. A very low gain temperature coefficient of
10 ppm/°C is achievable over the whole gain range. Output
voltage swing is guaranteed with three load resistances; 50 Ω,
500 Ω, and 2 kΩ. Loaded with 500 Ω, the output delivers
±13.0 V minimum. A thermal shutdown circuit prevents de-
struction of the output transistors during overload conditions.
The AMP01 can also be configured as a high performance operational amplifier. In many applications, the AMP01 can be
used in place of op amp/power-buffer combinations.
PIN CONFIGURATIONS
18-Lead Cerdip
TOP VIEW
(Not to Scale)
18
17
16
15
14
13
12
11
10
1
2
3
4
5
6
7
8
9
AMP01
OUTPUT
REFERENCE
R
G
R
G
–IN
V
OOS
NULL
SENSE
TEST PIN*
V
OOS
NULL
–V
OP
V–
+IN
V
IOS
NULL
V
IOS
NULL
R
S
V+
+V
OP
R
S
*MAKE NO ELECTRICAL CONNECTION
AMP01 BTC/883
28-Terminal LCC
NC = NO CONNECT
TOP VIEW
(Not to Scale)
28 27123426
25
21
22
23
24
19
20
5
6
7
8
9
10
11
12
13 14 15 16 17 18
AMP01
NC
V
OOS
NULL
NC
V
OOS
NULL
NC
TEST PIN*
NC
V
IOS
NULL
NC
R
S
R
S
+V
OP
NC
V+
–IN
R
G
R
G
NC
+IN
NC
V
IOS
NULL
SENSE
REF
OUT
NC
–V
OP
NC
V–
*MAKE NO ELECTRICAL CONNECTION
20-Lead SOIC
TOP VIEW
(Not to Scale)
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
AMP01
–V
OP
OUTPUT
REFERENCE
TEST PIN*
–IN
V
OOS
NULL
SENSE
TEST PIN*
V
OOS
NULL
V–
V+
+V
OP
TEST PIN*
+IN
V
IOS
NULL
R
S
R
S
R
G
R
G
V
IOS
NULL
*MAKE NO ELECTRICAL CONNECTION
FEATURES
Low Offset Voltage: 50 V Max
Very Low Offset Voltage Drift: 0.3 V/ⴗC Max
Low Noise: 0.12 V p-p (0.1 Hz to 10 Hz)
Excellent Output Drive: ⴞ10 V at ⴞ50 mA
Capacitive Load Stability: to 1 F
Gain Range: 0.1 to 10,000
Excellent Linearity: 16-Bit at G = 1000
High CMR: 125 dB min (G = 1000)
Low Bias Current: 4 nA Max
May Be Configured as a Precision Op Amp
Output-Stage Thermal Shutdown
Available in Die Form
*Protected under U.S. Patent Numbers 4,471,321 and 4,503,381.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1999
REV. D–2–
AMP01–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ VS = ⴞ15 V, RS = 10 k⍀, RL = 2 k⍀, TA = +25ⴗC, unless otherwise noted)
AMP01A AMP01B
Parameter Symbol Conditions Min Typ Max Min Typ Max Units
OFFSET VOLTAGE
Input Offset Voltage V
IOS
T
A
= +25°C 2050 40100 µV
–55°C ≤ T
A
≤ +125°C 4080 60150 µV
Input Offset Voltage Drift TCV
IOS
–55°C ≤ TA ≤ +125°C 0.15 0.3 0.3 1.0 µV/°C
Output Offset Voltage V
OOS
T
A
= +25°C1326mV
–55°C ≤ T
A
≤ +125°C36610mV
Output Offset Voltage Drift TCV
OOSRG
=
∞
–55°C ≤ TA ≤ +125°C 2050 50120 µV/°C
Offset Referred to Input PSR G = 1000 120 130 110 120 dB
vs. Positive Supply G = 100 110 130 100 120 dB
V+ = +5 V to +15 V G = 10 95 110 90 100 dB
G = 1 75 90 70 80 dB
–55°C ≤ T
A
≤ +125°C
G = 1000 120 130 110 120 dB
G = 100 110 130 100 120 dB
G = 10 95 110 90 100 dB
G = 1 75 90 70 80 dB
Offset Referred to Input PSR G = 1000 105 125 105 115 dB
vs. Negative Supply G = 100 90 105 90 95 dB
V– = –5 V to –15 V G = 10 70 85 70 75 dB
G = 1 50 65 50 60 dB
–55°C ≤ T
A
≤ +125°C
G = 1000 105 125 105 115 dB
G = 100 90 105 90 95 dB
G = 10 70 85 70 75 dB
G = 1 50 85 50 60 dB
Input Offset Voltage Trim
Range V
S
= ±4.5 V to ±18 V
1
±6 ±6mV
Output Offset Voltage Trim
Range V
S
= ±4.5 V to ±18 V
1
±100 ±100 mV
INPUT CURRENT
Input Bias Current I
B
T
A
= +25°C1426nA
–55°C ≤ T
A
≤ +125°C410615nA
Input Bias Current Drift TCI
B
–55°C ≤ TA ≤ +125°C 40 50 pA/°C
Input Offset Current I
OS
T
A
= +25°C 0.2 1.0 0.5 2.0 nA
–55°C ≤ T
A
≤ +125°C 0.5 3.0 1.0 6.0 nA
Input Offset Current Drift TCI
OS
–55°C ≤ TA ≤ +125°C 3 5 pA/°C
INPUT
Input Resistance R
IN
Differential, G = 1000 1 1 GΩ
Differential, G ≤ 100 10 10 GΩ
Common Mode, G = 1000 20 20 GΩ
Input Voltage Range IVR T
A
= +25°C
2
±10.5 ±10.5 V
–55°C ≤ T
A
≤ +125°C ±10.0 ±10.0 V
Common-Mode Rejection CMR V
CM
= ±10 V, 1 kΩ
Source Imbalance
G = 1000 125 130 115 125 dB
G = 100 120 130 110 125 dB
G = 10 100 120 95 110 dB
G = 1 85 100 75 90 dB
–55°C ≤ T
A
≤ +125°C
G = 1000 120 125 110 120 dB
G = 100 115 125 105 120 dB
G = 10 95 115 90 105 dB
G = 1 80 95 75 90 dB
NOTES
1
V
IOS
and V
OOS
nulling has minimal affect on TCV
IOS
and TCV
OOS
respectively.
2
Refer to section on common-mode rejection.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
AMP01E AMP01F/G
Parameter Symbol Conditions Min Typ Max Min Typ Max Units
OFFSET VOLTAGE
Input Offset Voltage V
IOS
T
A
= +25°C 2050 40100 µV
T
MIN
≤ TA ≤ T
MAX
40 80 60 150 µV
Input Offset Voltage Drift TCV
IOS
T
MIN
≤ TA ≤ T
MAX
1
0.15 0.3 0.3 1.0 µV/°C
Output Offset Voltage V
OOS
T
A
= +25°C1326mV
T
MIN
≤ TA ≤ T
MAX
36 610 mV
Output Offset Voltage Drift TCV
OOSRG
=
∞
1
T
MIN
≤ TA ≤ T
MAX
20 100 50 120 µV/°C
Offset Referred to Input PSR G = 1000 120 130 110 120 dB
vs. Positive Supply G = 100 110 130 100 120 dB
V+ = +5 V to +15 V G = 10 95 110 90 100 dB
G = 1 75 90 70 80 dB
T
MIN
≤ TA ≤ T
MAX
G = 1000 120 130 110 120 dB
G = 100 110 130 100 120 dB
G = 10 95 110 90 100 dB
G = 1 75 90 70 80 dB
Offset Referred to Input PSR G = 1000 110 125 105 115 dB
vs. Negative Supply G = 100 95 105 90 95 dB
V– = –5 V to –15 V G = 10 75 85 70 75 dB
G = 1 55 65 50 60 dB
T
MIN
≤ TA ≤ T
MAX
G = 1000 110 125 105 115 dB
G = 100 95 105 90 95 dB
G = 10 75 85 70 75 dB
G = 1 55 85 50 60 dB
Input Offset Voltage Trim
Range V
S
= ±4.5 V to ±18 V
2
±6 ±6mV
Output Offset Voltage Trim
Range V
S
= ±4.5 V to ±18 V
2
±100 ±100 mV
INPUT CURRENT
Input Bias Current I
B
T
A
= +25°C1426mV
T
MIN
≤ TA ≤ T
MAX
410 615 mV
Input Bias Current Drift TCI
B
T
MIN
≤ TA ≤ T
MAX
40 50 pA/°C
Input Offset Current I
OS
T
A
= +25°C 0.2 1.0 0.5 2.0 mV
T
MIN
≤ TA ≤ T
MAX
0.5 3.0 1.0 6.0 mV
Input Offset Current Drift TCI
OS
T
MIN
≤ TA ≤ T
MAX
3 5 pA/°C
INPUT
Input Resistance R
IN
Differential, G = 1000 1 1 GΩ
Differential, G ≤ 100 10 10 GΩ
Common Mode, G = 1000 20 20 GΩ
Input Voltage Range IVR T
A
= +25°C
3
±10.5 ±10.5 V
T
MIN
≤ TA ≤ T
MAX
±10.0 ±10.0 V
Common-Mode Rejection CMR V
CM
= ±10 V, 1 kΩ
Source Imbalance
G = 1000 125 130 115 125 dB
G = 100 120 130 110 125 dB
G = 10 100 120 95 110 dB
G = 1 85 100 75 90 dB
T
MIN
≤ TA ≤ T
MAX
G = 1000 120 125 110 120 dB
G = 100 115 125 105 120 dB
G = 10 95 115 90 105 dB
G = 1 80 95 75 90 dB
NOTES
1
Sample tested.
2
V
IOS
and V
OOS
nulling has minimal affect on TCV
IOS
and TCV
OOS
, respectively.
3
Refer to section on common-mode rejection.
Specifications subject to change without notice.
(@ VS = ⴞ15 V, RS = 10 k⍀, RL = 2 k⍀, T
A
= +25ⴗC, –25ⴗC ≤
T
A
≤ +85ⴗC for E, F
grades, 0ⴗC ≤ TA ≤ +70ⴗC for G grade, unless otherwise noted)
AMP01
–3–
REV. D
AMP01
–4–
REV. D
ELECTRICAL CHARACTERISTICS
(@ VS = ⴞ15 V, RS = 10 k⍀, RL = 2 k⍀, TA = +25ⴗC, unless otherwise noted)
AMP01A/E AMP01B/F/G
Parameter Symbol Conditions Min Typ Max Min Typ Max Units
GAIN
Gain Equation Accuracy G =
20 × R
S
R
G
0.3 0.6 0.5 0.8 %
Accuracy Measured
from G = 1 to 1000
Gain Range G 0.1 10k 0.1 10k V/V
Nonlinearity G = 1000
1
0.0007 0.005 0.0007 0.005 %
G = 100
1
0.005 0.005 %
G = 10
1
0.005 0.007 %
G = 1
1
0.010 0.015 %
Temperature Coefficient G
TC
1 ≤ G ≤ 1000
1, 2
5 10 5 15 ppm°C
OUTPUT RATING
Output Voltage Swing V
OUT
R
L
= 2 kΩ±13.0 ±13.8 ±13.0 ±13.8 V
R
L
= 500 Ω±13.0 ±13.5 ±13.0 ±13.5 V
R
L
= 50 Ω±2.5 ±4.0 ±2.5 ±4.0 V
R
L
= 2 kΩ Over Temp. ±12.0 ±13.8 ±12.0 ±13.8 V
R
L
= 500 Ω
3
±12.0 ±13.5 ±12.0 ±13.5 V
Positive Current Limit Output-to-Ground Short 60 100 120 60 100 120 mA
Negative Current Limit Output-to-Ground Short 60 90 120 60 90 120 mA
Capacitive Load Stability 1 ≤ G ≤ 1000
No Oscillations
1
0.1 1 0.1 1 µF
Thermal Shutdown
Temperature Junction Temperature 165 165 °C
NOISE
Voltage Density, RTI e
n
fO = 1 kHz
e
n
G = 1000 5 5 nV/√Hz
e
n
G = 100 10 10 nV/√Hz
e
n
G = 10 59 59 nV/√Hz
e
n
G = 1 540 540 nV/√Hz
Noise Current Density, RTI i
n
f
O
= 1 kHz, G = 1000 0.15 0.15 pA/√Hz
Input Noise Voltage e
n
p-p 0.1 Hz to 10 Hz
e
n
p-p G = 1000 0.12 0.12 µV p-p
e
n
p-p G = 100 0.16 0.16 µV
p-p
e
n
p-p G = 10 1.4 1.4 µV p-p
e
n
p-p G = 1 13 13 µV p-p
Input Noise Current in p-p 0.1 Hz to 10 Hz, G = 1000 2 2 pA p-p
DYNAMIC RESPONSE
Small-Signal G = 1 570 570 kHz
Bandwidth (–3 dB) BW G = 10 100 100 kHz
G = 100 82 82 kHz
G = 1000 26 26 kHz
Slew Rate SR G = 10 3.5 4.5 3.0 4.5 V/µs
Settling Time t
S
To 0.01%, 20 V step
G = 1 12 12 µs
G = 10 13 13 µs
G = 100 15 15 µs
G = 1000 50 50 µs
NOTES
1
Guaranteed by design.
2
Gain tempco does not include the effects of gain and scale resistor tempco match.
3
–55°C ≤ TA ≤ +125°C for A/B grades, –25°C ≤ TA ≤ +85°C for E/F grades, 0°C ≤ TA ≤ 70°C for G grades.
Specifications subject to change without notice.
ORDERING GUIDE
Model Temperature Range Package Description Package Option
AMP01AX –55°C to +125°C 18-Lead Cerdip Q-18
AMP01AX/883C –55°C to +125°C 18-Lead Cerdip Q-18
AMP01BTC/883C –55°C to +125°C 28-Terminal LCC E-28A
AMP01BX –55°C to +125°C 18-Lead Cerdip Q-18
AMP01BX/883C –55°C to +125°C 18-Lead Cerdip Q-18
AMP01EX –25°C to +85°C 18-Lead Cerdip Q-18
AMP01FX –25°C to +85°C 18-Lead Cerdip Q-18
AMP01GBC Die
AMP01GS 0°C to +70°C 20-Lead SOIC R-20
AMP01GS-REEL 0°C to +70°C13" Tape and Reel R-20
AMP01NBC Die
5962-8863001VA* –55°C to +125°C 18-Lead Cerdip Q-18
5962-88630023A* –55°C to +125°C 28-Terminal LCC E-28A
5962-8863002VA* –55°C to +125°C 18-Lead Cerdip Q-18
*Standard military drawing available.
ELECTRICAL CHARACTERISTICS
(@ VS = ⴞ15 V, RS = 10 k⍀, RL = 2 k⍀, TA = +25ⴗC, unless otherwise noted)
AMP01A/E AMP01B/F/G
Parameter Symbol Conditions Min Typ Max Min Typ Max Units
SENSE INPUT
Input Resistance R
IN
35 50 65 35 50 65 kΩ
Input Current I
IN
Referenced to V– 280 280 µA
Voltage Range (Note 1) –10.5 +15 –10.5 +15 V
REFERENCE INPUT
Input Resistance R
IN
35 50 65 35 50 65 kΩ
Input Current I
IN
Referenced to V– 280 280 µA
Voltage Range (Note 1) –10.5 +15 –10.5 +15 V
Gain to Output 1 1 V/V
POWER SUPPLY –25°C ≤ T
A
≤ +85°C for E/F Grades, –55°C ≤ TA ≤ +125°C for A/B Grades
Supply Voltage Range V
S
+V linked to +V
OP
±4.5 ±18 ±4.5 ±18 V
V
S
–V linked to –V
OP
±4.5 ±18 ±4.5 ±18 V
Quiescent Current I
Q
+V linked to +V
OP
3.0 4.8 3.0 4.8 mA
I
Q
–V linked to –V
OP
3.4 4.8 3.4 4.8 mA
NOTE
1
Guaranteed by design.
Specifications subject to change without notice.
AMP01
–5–
REV. D
1. R
G
2. R
G
3. –INPUT
4. V
OOS
NULL
5. V
OOS
NULL
6. TEST PIN*
7. SENSE
8. REFERENCE
9. OUTPUT
10. V– (OUTPUT)
11. V–
12. V+
13. V+ (OUTPUT)
14. R
S
15. R
S
16. V
IOS
NULL
17. V
IOS
NULL
18. +INPUT
*MAKE NO ELECTRICAL CONNECTION
DICE CHARACTERISTICS
Die Size 0.111 × 0.149 inch, 16,539 sq. mils
(2.82 × 3.78 mm, 10.67 sq. mm)
AMP01
–6–
REV. D
WAFER TEST LIMITS
(@ VS = ⴞ15 V, RS = 10 k⍀, RL = 2 k⍀, TA = +25ⴗC, unless otherwise noted)
AMP01NBC AMP01GBC
Parameter Symbol Conditions Limit Limit Units
Input Offset Voltage V
IOS
60 120 µV max
Output Offset Voltage V
OOS
4 8 mV max
Offset Referred to Input PSR V+ = +5 V to +15 V dB min
vs. Positive Supply G = 1000 120 110 dB min
G = 100 110 100 dB min
G = 10 95 90 dB min
G = 1 75 70 dB min
Offset Referred to Input PSR V– = –5 V to –15 V dB min
vs. Negative Supply G = 1000 105 105 dB min
G = 100 90 90 dB min
G = 10 70 70 dB min
G = 1 50 50 dB min
Input Bias Current I
B
48nA max
Input Offset Current I
OS
13nA max
Input Voltage Range IVR Guaranteed by CMR Tests ±10 ±10 V min
Common Mode Rejection CMR V
CM
= ±10 V dB min
G = 1000 125 115 dB min
G = 100 120 110 dB min
G = 10 100 95 dB min
G = 1 85 75 dB min
Gain Equation Accuracy G =
20 × R
S
R
G
0.6 0.8 % max
Output Voltage Swing V
OUT
R
L
= 2 kΩ±13 ±13 V min
V
OUT
R
L
= 500 Ω±13 ±13 V min
V
OUT
R
L
= 50 Ω±2.5 ±2.5 V min
Output Current Limit Output to Ground Short ±60 ±60 mA min
Output Current Limit Output to Ground Short ±120 ±120 mA max
Quiescent Current I
Q
+V Linked to +V
OP
4.8 4.8 mA max
–V Linked to –V
OP
4.8 4.8 mA max
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
V
IOS
NULL
R
GAIN
R
SCALE
V
OOS
NULL
R1
47.5kV
R2
2.5kV
R4
2.5kV
R3
47.5kV
A1
A3A2
Q1 Q2
250V
250V
–IN
+IN
REFERENCE
V+
+V
OP
OUTPUT
–V
OP
SENSE
V–
Figure 1. Simplified Schematic
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AMP01 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
AMP01
–7–
REV. D
ELECTRICAL CHARACTERISTICS
(@ VS = ⴞ15 V, RS = 10 k⍀, RL = 2 k⍀, TA = +25ⴗC, unless otherwise noted)
AMP01NBC AMP01GBC
Parameter Symbol Conditions Typical Typical Units
Input Offset Voltage Drift TCV
IOS
0.15 0.30 µV/°C
Output Offset Voltage Drift TCV
OOS
RG =
∞
20 50 µV/°C
Input Bias Current Drift TCI
B
40 50 pA/°C
Input Offset Current Drift TCI
OS
3 5 pA/°C
Nonlinearity G = 1000 0.0007 0.0007 %
Voltage Noise Density e
n
G = 1000
f
O
= 1 kHz 5 5 nV/√Hz
Current Noise Density i
n
G = 1000
f
O
= 1 kHz 0.15 0.15 pA/√Hz
Voltage Noise e
n
p-p G = 1000
0.1 Hz to 10 Hz 0.12 0.12 µV p-p
Current Noise i
n
p-p G = 1000 2 2 pA p-p
0.1 Hz to 10 Hz
Small-Signal Bandwidth (–3 dB) BW G = 1000 26 26 kHz
Slew Rate SR G = 10 4.5 4.5 V/µs
Settling Time t
S
To 0.01%, 20 V Step
G = 1000 50 50 µs
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
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