Analog Devices AMP01 Datasheet
Low Noise, Precision
a
FEATURES
Low Offset Voltage: 50 V Max
Very Low Offset Voltage Drift: 0.3 V/ⴗC Max
Low Noise: 0.12 V p-p (0.1 Hz to 10 Hz)
Excellent Output Drive: ⴞ10 V at ⴞ50 mA
Capacitive Load Stability: to 1 F
Gain Range: 0.1 to 10,000
Excellent Linearity: 16-Bit at G = 1000
High CMR: 125 dB min (G = 1000)
Low Bias Current: 4 nA Max
May Be Configured as a Precision Op Amp
Output-Stage Thermal Shutdown
Available in Die Form
GENERAL DESCRIPTION
The AMP01 is a monolithic instrumentation amplifier designed
for high-precision data acquisition and instrumentation applications. The design combines the conventional features of an
instrumentation amplifier with a high current output stage. The
output remains stable with high capacitance loads (1 µF), a
unique ability for an instrumentation amplifier. Consequently,
the AMP01 can amplify low level signals for transmission
through long cables without requiring an output buffer. The output
stage may be configured as a voltage or current generator.
Input offset voltage is very low (20 µV), which generally elimi-
nates the external null potentiometer. Temperature changes
have minimal effect on offset; TCV
Excellent low-frequency noise performance is achieved with a
minimal compromise on input protection. Bias current is very
low, less than 10 nA over the military temperature range. High
common-mode rejection of 130 dB, 16-bit linearity at a gain of
1000, and 50 mA peak output current are achievable simultaneously. This combination takes the instrumentation amplifier
one step further towards the ideal amplifier.
AC performance complements the superb dc specifications. The
AMP01 slews at 4.5 V/µs into capacitive loads of up to 15 nF,
settles in 50 µs to 0.01% at a gain of 1000, and boasts a healthy
26 MHz gain-bandwidth product. These features make the
AMP01 ideal for high speed data acquisition systems.
Gain is set by the ratio of two external resistors over a range of
0.1 to 10,000. A very low gain temperature coefficient of
10 ppm/°C is achievable over the whole gain range. Output
voltage swing is guaranteed with three load resistances; 50 Ω,
500 Ω, and 2 kΩ. Loaded with 500 Ω, the output delivers
±13.0 V minimum. A thermal shutdown circuit prevents de-
struction of the output transistors during overload conditions.
The AMP01 can also be configured as a high performance operational amplifier. In many applications, the AMP01 can be
used in place of op amp/power-buffer combinations.
is typically 0.15 µV/°C.
IOS
Instrumentation Amplifier
AMP01*
PIN CONFIGURATIONS
18-Lead Cerdip
18
+IN
17
V
IOS
16
V
NULL
IOS
15
R
S
14
R
S
13
+V
OP
12
V+
V–
11
10
–V
AMP01
G
NC
R
OP
NULL
IOS
V
+IN
NC
28 27123426
AMP01
OP
V–
NC
NC
OUT
–V
20
R
G
19
TEST PIN*
18
+IN
17
V
IOS
16
V
IOS
15
R
S
14
R
S
13
+V
OP
12
V+
11
V–
NULL
25
24
23
22
21
20
19
NULL
NULL
V
NC
R
R
+V
NC
V+
IOS
S
S
NULL
OP
V
NULL
OOS
V
NULL
OOS
TEST PIN*
SENSE
REFERENCE
OUTPUT
*MAKE NO ELECTRICAL CONNECTION
NC
V
NULL
OOS
NC
V
NULL
OOS
NC
TEST PIN*
NC = NO CONNECT
10
11
NC
*MAKE NO ELECTRICAL CONNECTION
TEST PIN*
V
NULL
OOS
V
NULL
OOS
TEST PIN*
SENSE
REFERENCE
OUTPUT
–V
*MAKE NO ELECTRICAL CONNECTION
1
R
G
2
R
G
3
–IN
4
5
6
7
8
9
TOP VIEW
(Not to Scale)
AMP01 BTC/883
28-Terminal LCC
G
–IN
R
5
6
7
8
9
TOP VIEW
(Not to Scale)
12
13 14 15 16 17 18
REF
SENSE
20-Lead SOIC
1
R
G
2
3
–IN
4
5
AMP01
TOP VIEW
6
(Not to Scale)
7
8
9
10
OP
REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
*Protected under U.S. Patent Numbers 4,471,321 and 4,503,381.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1999
AMP01–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ VS = ⴞ15 V, RS = 10 k⍀, RL = 2 k⍀, TA = +25ⴗC, unless otherwise noted)
AMP01A AMP01B
Parameter Symbol Conditions Min Typ Max Min Typ Max Units
OFFSET VOLTAGE
T
Input Offset Voltage V
IOS
Input Offset Voltage Drift TCV
Output Offset Voltage V
OOS
Output Offset Voltage Drift TCV
IOS
OOS
= +25°C 2050 40100 µV
A
–55°C ≤ T
≤ +125°C 4080 60150 µV
A
–55°C ≤ TA ≤ +125°C 0.15 0.3 0.3 1.0 µV/°C
T
= +25°C1326mV
A
–55°C ≤ T
RG =
≤ +125°C36610mV
A
∞
–55°C ≤ TA ≤ +125°C 2050 50120 µV/°C
Offset Referred to Input PSR G = 1000 120 130 110 120 dB
vs. Positive Supply G = 100 110 130 100 120 dB
V+ = +5 V to +15 V G = 10 95 110 90 100 dB
G = 1 75 90 70 80 dB
–55°C ≤ T
≤ +125°C
A
G = 1000 120 130 110 120 dB
G = 100 110 130 100 120 dB
G = 10 95 110 90 100 dB
G = 1 75 90 70 80 dB
Offset Referred to Input PSR G = 1000 105 125 105 115 dB
vs. Negative Supply G = 100 90 105 90 95 dB
V– = –5 V to –15 V G = 10 70 85 70 75 dB
G = 1 50 65 50 60 dB
–55°C ≤ T
≤ +125°C
A
G = 1000 105 125 105 115 dB
G = 100 90 105 90 95 dB
G = 10 70 85 70 75 dB
G = 1 50 85 50 60 dB
Input Offset Voltage Trim
Range V
Output Offset Voltage Trim
Range V
= ±4.5 V to ±18 V
S
= ±4.5 V to ±18 V
S
1
1
±6 ±6mV
±100 ±100 mV
INPUT CURRENT
T
Input Bias Current I
B
Input Bias Current Drift TCI
Input Offset Current I
OS
Input Offset Current Drift TCI
B
OS
= +25°C1426nA
A
–55°C ≤ T
≤ +125°C410615nA
A
–55°C ≤ TA ≤ +125°C 40 50 pA/°C
T
= +25°C 0.2 1.0 0.5 2.0 nA
A
–55°C ≤ T
≤ +125°C 0.5 3.0 1.0 6.0 nA
A
–55°C ≤ TA ≤ +125°C 3 5 pA/°C
INPUT
Input Resistance R
IN
Differential, G = 1000 1 1 GΩ
Differential, G ≤ 100 10 10 GΩ
Input Voltage Range IVR T
Common-Mode Rejection CMR V
Common Mode, G = 1000 20 20 GΩ
= +25°C
A
–55°C ≤ T
= ±10 V, 1 kΩ
CM
2
≤ +125°C ±10.0 ±10.0 V
A
±10.5 ±10.5 V
Source Imbalance
G = 1000 125 130 115 125 dB
G = 100 120 130 110 125 dB
G = 10 100 120 95 110 dB
G = 1 85 100 75 90 dB
–55°C ≤ T
≤ +125°C
A
G = 1000 120 125 110 120 dB
G = 100 115 125 105 120 dB
G = 10 95 115 90 105 dB
G = 1 80 95 75 90 dB
NOTES
1
V
and V
IOS
2
Refer to section on common-mode rejection.
Specifications subject to change without notice.
nulling has minimal affect on TCV
OOS
and TCV
IOS
respectively.
OOS
REV. D–2–
AMP01
(@ VS = ⴞ15 V, RS = 10 k⍀, RL = 2 k⍀, T
ELECTRICAL CHARACTERISTICS
grades, 0ⴗC ≤ TA ≤ +70ⴗC for G grade, unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Min Typ Max Units
OFFSET VOLTAGE
T
Input Offset Voltage V
IOS
Input Offset Voltage Drift TCV
Output Offset Voltage V
OOS
Output Offset Voltage Drift TCV
IOS
OOS
= +25°C 2050 40100 µV
A
≤ TA ≤ T
T
MIN
T
≤ TA ≤ T
MIN
T
= +25°C1326mV
A
≤ TA ≤ T
T
MIN
RG =
∞
T
≤ TA ≤ T
MIN
MAX
1
MAX
MAX
1
MAX
Offset Referred to Input PSR G = 1000 120 130 110 120 dB
vs. Positive Supply G = 100 110 130 100 120 dB
V+ = +5 V to +15 V G = 10 95 110 90 100 dB
G = 1 75 90 70 80 dB
≤ TA ≤ T
T
MIN
MAX
G = 1000 120 130 110 120 dB
G = 100 110 130 100 120 dB
G = 10 95 110 90 100 dB
G = 1 75 90 70 80 dB
Offset Referred to Input PSR G = 1000 110 125 105 115 dB
vs. Negative Supply G = 100 95 105 90 95 dB
V– = –5 V to –15 V G = 10 75 85 70 75 dB
G = 1 55 65 50 60 dB
≤ TA ≤ T
T
MIN
MAX
G = 1000 110 125 105 115 dB
G = 100 95 105 90 95 dB
G = 10 75 85 70 75 dB
G = 1 55 85 50 60 dB
Input Offset Voltage Trim
Range V
Output Offset Voltage Trim
Range V
= ±4.5 V to ±18 V
S
= ±4.5 V to ±18 V
S
2
2
INPUT CURRENT
T
Input Bias Current I
B
Input Bias Current Drift TCI
Input Offset Current I
OS
Input Offset Current Drift TCI
B
OS
= +25°C1426mV
A
≤ TA ≤ T
T
MIN
T
≤ TA ≤ T
MIN
T
= +25°C 0.2 1.0 0.5 2.0 mV
A
≤ TA ≤ T
T
MIN
T
≤ TA ≤ T
MIN
MAX
MAX
MAX
MAX
INPUT
Input Resistance R
IN
Differential, G = 1000 1 1 GΩ
Differential, G ≤ 100 10 10 GΩ
Input Voltage Range IVR T
Common-Mode Rejection CMR V
Common Mode, G = 1000 20 20 GΩ
= +25°C
A
T
MIN
= ±10 V, 1 kΩ
CM
3
≤ TA ≤ T
MAX
±10.5 ±10.5 V
±10.0 ±10.0 V
Source Imbalance
G = 1000 125 130 115 125 dB
G = 100 120 130 110 125 dB
G = 10 100 120 95 110 dB
G = 1 85 100 75 90 dB
≤ TA ≤ T
T
MIN
MAX
G = 1000 120 125 110 120 dB
G = 100 115 125 105 120 dB
G = 10 95 115 90 105 dB
G = 1 80 95 75 90 dB
NOTES
1
Sample tested.
2
V
and V
IOS
3
Refer to section on common-mode rejection.
Specifications subject to change without notice.
nulling has minimal affect on TCV
OOS
REV. D
and TCV
IOS
, respectively.
OOS
–3–
= +25ⴗC, –25ⴗC ≤
A
T
≤ +85ⴗC for E, F
A
AMP01E AMP01F/G
40 80 60 150 µV
0.15 0.3 0.3 1.0 µV/°C
36 610 mV
20 100 50 120 µV/°C
±6 ±6mV
±100 ±100 mV
410 615 mV
40 50 pA/°C
0.5 3.0 1.0 6.0 mV
3 5 pA/°C
AMP01
ELECTRICAL CHARACTERISTICS
(@ VS = ⴞ15 V, RS = 10 k⍀, RL = 2 k⍀, TA = +25ⴗC, unless otherwise noted)
AMP01A/E AMP01B/F/G
Parameter Symbol Conditions Min Typ Max Min Typ Max Units
GAIN
20 × R
Gain Equation Accuracy G =
S
R
G
0.3 0.6 0.5 0.8 %
Accuracy Measured
from G = 1 to 1000
Gain Range G 0.1 10k 0.1 10k V/V
Nonlinearity G = 1000
G = 100
G = 10
G = 1
Temperature Coefficient G
TC
1 ≤ G ≤ 1000
1
1
1
1
1, 2
0.0007 0.005 0.0007 0.005 %
0.005 0.005 %
0.005 0.007 %
0.010 0.015 %
5 10 5 15 ppm°C
OUTPUT RATING
R
Output Voltage Swing V
OUT
= 2 kΩ±13.0 ±13.8 ±13.0 ±13.8 V
L
= 500 Ω±13.0 ±13.5 ±13.0 ±13.5 V
R
L
= 50 Ω±2.5 ±4.0 ±2.5 ±4.0 V
R
L
= 2 kΩ Over Temp. ±12.0 ±13.8 ±12.0 ±13.8 V
R
L
= 500 Ω
R
L
3
±12.0 ±13.5 ±12.0 ±13.5 V
Positive Current Limit Output-to-Ground Short 60 100 120 60 100 120 mA
Negative Current Limit Output-to-Ground Short 60 90 120 60 90 120 mA
Capacitive Load Stability 1 ≤ G ≤ 1000
No Oscillations
1
0.1 1 0.1 1 µF
Thermal Shutdown
Temperature Junction Temperature 165 165 °C
NOISE
Voltage Density, RTI e
Noise Current Density, RTI i
Input Noise Voltage e
n
e
n
e
n
e
n
e
n
n
n
e
n
e
n
e
n
e
n
fO = 1 kHz
G = 1000 5 5 nV/√Hz
G = 100 10 10 nV/√Hz
G = 10 59 59 nV/√Hz
G = 1 540 540 nV/√Hz
f
= 1 kHz, G = 1000 0.15 0.15 pA/√Hz
O
p-p 0.1 Hz to 10 Hz
p-p G = 1000 0.12 0.12 µV p-p
p-p G = 100 0.16 0.16 µV
p-p
p-p G = 10 1.4 1.4 µV p-p
p-p G = 1 13 13 µV p-p
Input Noise Current in p-p 0.1 Hz to 10 Hz, G = 1000 2 2 pA p-p
DYNAMIC RESPONSE
Small-Signal G = 1 570 570 kHz
Bandwidth (–3 dB) BW G = 10 100 100 kHz
G = 100 82 82 kHz
G = 1000 26 26 kHz
Slew Rate SR G = 10 3.5 4.5 3.0 4.5 V/µs
Settling Time t
S
To 0.01%, 20 V step
G = 1 12 12 µs
G = 10 13 13 µs
G = 100 15 15 µs
G = 1000 50 50 µs
NOTES
1
Guaranteed by design.
2
Gain tempco does not include the effects of gain and scale resistor tempco match.
3
–55°C ≤ TA ≤ +125°C for A/B grades, –25°C ≤ TA ≤ +85°C for E/F grades, 0°C ≤ TA ≤ 70°C for G grades.
Specifications subject to change without notice.
–4–
REV. D
AMP01
ELECTRICAL CHARACTERISTICS
(@ VS = ⴞ15 V, RS = 10 k⍀, RL = 2 k⍀, TA = +25ⴗC, unless otherwise noted)
AMP01A/E AMP01B/F/G
Parameter Symbol Conditions Min Typ Max Min Typ Max Units
SENSE INPUT
Input Resistance R
Input Current I
IN
IN
Referenced to V– 280 280 µA
35 50 65 35 50 65 kΩ
Voltage Range (Note 1) –10.5 +15 –10.5 +15 V
REFERENCE INPUT
Input Resistance R
Input Current I
IN
IN
Referenced to V– 280 280 µA
35 50 65 35 50 65 kΩ
Voltage Range (Note 1) –10.5 +15 –10.5 +15 V
Gain to Output 1 1 V/V
POWER SUPPLY –25°C ≤ T
Supply Voltage Range V
Quiescent Current I
NOTE
1
Guaranteed by design.
Specifications subject to change without notice.
≤ +85°C for E/F Grades, –55°C ≤ TA ≤ +125°C for A/B Grades
A
S
V
S
Q
I
Q
+V linked to +V
–V linked to –V
+V linked to +V
–V linked to –V
OP
OP
OP
OP
±4.5 ±18 ±4.5 ±18 V
±4.5 ±18 ±4.5 ±18 V
3.0 4.8 3.0 4.8 mA
3.4 4.8 3.4 4.8 mA
ORDERING GUIDE
Model Temperature Range Package Description Package Option
AMP01AX –55°C to +125°C 18-Lead Cerdip Q-18
AMP01AX/883C –55°C to +125°C 18-Lead Cerdip Q-18
AMP01BTC/883C –55°C to +125°C 28-Terminal LCC E-28A
AMP01BX –55°C to +125°C 18-Lead Cerdip Q-18
AMP01BX/883C –55°C to +125°C 18-Lead Cerdip Q-18
AMP01EX –25°C to +85°C 18-Lead Cerdip Q-18
AMP01FX –25°C to +85°C 18-Lead Cerdip Q-18
AMP01GBC Die
AMP01GS 0°C to +70°C 20-Lead SOIC R-20
AMP01GS-REEL 0°C to +70°C13" Tape and Reel R-20
AMP01NBC Die
5962-8863001VA* –55°C to +125°C 18-Lead Cerdip Q-18
5962-88630023A* –55°C to +125°C 28-Terminal LCC E-28A
5962-8863002VA* –55°C to +125°C 18-Lead Cerdip Q-18
*Standard military drawing available.
REV. D
DICE CHARACTERISTICS
Die Size 0.111 × 0.149 inch, 16,539 sq. mils
(2.82 × 3.78 mm, 10.67 sq. mm)
–5–
1. R
G
2. R
G
3. –INPUT
4. V
NULL
OOS
NULL
5. V
OOS
6. TEST PIN*
7. SENSE
8. REFERENCE
9. OUTPUT
*MAKE NO ELECTRICAL CONNECTION
10. V– (OUTPUT)
11. V–
12. V+
13. V+ (OUTPUT)
14. R
S
15. R
S
16. V
NULL
IOS
NULL
17. V
IOS
18. +INPUT
AMP01
WARNING!
ESD SENSITIVE DEVICE
WAFER TEST LIMITS
(@ VS = ⴞ15 V, RS = 10 k⍀, RL = 2 k⍀, TA = +25ⴗC, unless otherwise noted)
AMP01NBC AMP01GBC
Parameter Symbol Conditions Limit Limit Units
Input Offset Voltage V
Output Offset Voltage V
IOS
OOS
60 120 µV max
4 8 mV max
Offset Referred to Input PSR V+ = +5 V to +15 V dB min
vs. Positive Supply G = 1000 120 110 dB min
G = 100 110 100 dB min
G = 10 95 90 dB min
G = 1 75 70 dB min
Offset Referred to Input PSR V– = –5 V to –15 V dB min
vs. Negative Supply G = 1000 105 105 dB min
G = 100 90 90 dB min
G = 10 70 70 dB min
G = 1 50 50 dB min
Input Bias Current I
Input Offset Current I
B
OS
48nA max
13nA max
Input Voltage Range IVR Guaranteed by CMR Tests ±10 ±10 V min
Common Mode Rejection CMR V
= ±10 V dB min
CM
G = 1000 125 115 dB min
G = 100 120 110 dB min
G = 10 100 95 dB min
G = 1 85 75 dB min
Gain Equation Accuracy G =
Output Voltage Swing V
V
V
OUT
OUT
OUT
R
= 2 kΩ±13 ±13 V min
L
R
= 500 Ω±13 ±13 V min
L
R
= 50 Ω±2.5 ±2.5 V min
L
S
R
G
0.6 0.8 % max
20 × R
Output Current Limit Output to Ground Short ±60 ±60 mA min
Output Current Limit Output to Ground Short ±120 ±120 mA max
Quiescent Current I
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
Q
+V Linked to +V
–V Linked to –V
OP
OP
4.8 4.8 mA max
4.8 4.8 mA max
V
IOS
NULL
A1
250V
–IN
250V
+IN
REFERENCE
R1
47.5kV
R2
2.5kV
Q1 Q2
R
GAIN
R
SCALE
V
OOS
NULL
A3A2
Figure 1. Simplified Schematic
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AMP01 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–6–
R3
47.5kV
R4
2.5kV
V+
+V
OP
OUTPUT
–V
OP
SENSE
V–
REV. D
AMP01
ELECTRICAL CHARACTERISTICS
(@ VS = ⴞ15 V, RS = 10 k⍀, RL = 2 k⍀, TA = +25ⴗC, unless otherwise noted)
AMP01NBC AMP01GBC
Parameter Symbol Conditions Typical Typical Units
Input Offset Voltage Drift TCV
Output Offset Voltage Drift TCV
Input Bias Current Drift TCI
Input Offset Current Drift TCI
B
OS
IOS
OOS
RG =
∞
0.15 0.30 µV/°C
20 50 µV/°C
40 50 pA/°C
3 5 pA/°C
Nonlinearity G = 1000 0.0007 0.0007 %
Voltage Noise Density e
Current Noise Density i
Voltage Noise e
n
n
p-p G = 1000
n
G = 1000
= 1 kHz 5 5 nV/√Hz
f
O
G = 1000
= 1 kHz 0.15 0.15 pA/√Hz
f
O
0.1 Hz to 10 Hz 0.12 0.12 µV p-p
Current Noise i
p-p G = 1000 2 2 pA p-p
n
0.1 Hz to 10 Hz
Small-Signal Bandwidth (–3 dB) BW G = 1000 26 26 kHz
Slew Rate SR G = 10 4.5 4.5 V/µs
Settling Time t
S
To 0.01%, 20 V Step
G = 1000 50 50 µs
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
REV. D
–7–
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