2.7 V to 5.5 V power supply
Separate charge pump supply (VP) allows extended tuning
voltage in 3 V systems
Programmable dual-modulus prescaler 8/9, 16/17, 32/33,
64/65
Programmable charge pump currents
Programmable antibacklash pulse width
3-wire serial interface
Analog and digital lock detect
Hardware and software power-down mode
APPLICATIONS
Base stations for wireless radio (GSM, PCS, DCS, CDMA,
WCDMA)
Wireless handsets (GSM, PCS, DCS, CDMA, WCDMA)
Wireless LANS
Communications test equipment
CAT V equipment
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
The ADF4110 family of frequency synthesizers can be used to
implement local oscillators in the upconversion and downconversion sections of wireless receivers and transmitters. They
consist of a low noise digital PFD (phase frequency detector), a
precision charge pump, a programmable reference divider,
programmable A and B counters, and a dual-modulus prescaler
(P/P + 1). The A (6-bit) and B (13-bit) counters, in conjunction
with the dual-modulus prescaler (P/P + 1), implement an N
divider (N = BP + A). In addition, the 14-bit reference counter
(R counter) allows selectable REFIN frequencies at the PFD
input. A complete phase-locked loop (PLL) can be implemented
if the synthesizer is used with an external loop filter and voltage
controlled oscillator (VCO).
Control of all the on-chip registers is via a simple 3-wire
interface. The devices operate with a power supply ranging
from 2.7 V to 5.5 V and can be powered down when not in use.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Figure 1. Functional Block Diagram
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Phase Frequency Detector (PFD) and Charge Pump ............ 13
REFIN Input Frequency 5/104 5/104 MHz min/max For f < 5 MHz, ensure SR > 100 V/µs.
Reference Input Sensitivity 0.4/AVDD 0.4/AVDD V p-p min/max AVDD = 3.3 V, biased at AVDD/2. See Note 3.
3.0/AVDD 3.0/AVDD V p-p min/max AVDD = 5 V, biased at AVDD/2. See Note 3.
REFIN Input Capacitance 10 10 pF max
REFIN Input Current ±100 ±100 µA max
PHASE DETECTOR FREQUENCY4 55 55 MHz max
CHARGE PUMP
ICP Sink/Source Programmable (see Table 9).
High Value 5 5 mA typ With R
= 4.7 kΩ.
SET
Low Value 625 625 µA typ
Absolute Accuracy 2.5 2.5 % typ With R
R
Range 2.7/10 2.7/10 kΩ typ See Table 9.
SET
= 4.7 kΩ.
SET
ICP 3-State Leakage Current 1 1 nA typ
Sink and Source Current Matching 2 2 % typ 0.5 V ≤ VCP ≤ VP – 0.5 V.
ICP vs. VCP 1.5 1.5 % typ 0.5 V ≤ VCP ≤ VP – 0.5 V.
ICP vs. Temperature 2 2 % typ VCP = VP/2.
LOGIC INPUTS
V
, Input High Voltage 0.8 × DVDD 0.8 × DVDD V min
INH
V
, Input Low Voltage 0.2 × DVDD 0.2 × DVDD V max
INL
I
, Input Current ±1 ±1 µA max
INH/IINL
CIN, Input Capacitance 10 10 pF max
LOGIC OUTPUTS
VOH, Output High Voltage DVDD – 0.4 DVDD – 0.4 V min IOH = 500 µA.
VOL, Output Low Voltage 0.4 0.4 V max IOL = 500 µA.
Rev. D | Page 3 of 28
ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet
ADF4112: 900 MHz Output9
−90
−90
dBc/Hz typ
@ 1 kHz offset and 200 kHz PFD frequency.
ADF4111: 836 MHz Output10
−81/−84
−81/−84
dBc typ
@ 30 kHz/60 kHz and 30 kHz PFD frequency.
Parameter B Version B Chips1 Unit Test Conditions/Comments
POWER SUPPLIES
AVDD 2.7/5.5 2.7/5.5 V min/V max
DV
AVDD AVDD
DD
VP AVDD/6.0 AVDD/6.0 V min/V max AVDD ≤ VP ≤ 6.0 V. See Figure 25 and Figure 26.
5
I
(AIDD + DIDD)
DD
ADF4110 5.5 4.5 mA max 4.5 mA typical.
ADF4111 5.5 4.5 mA max 4.5 mA typical.
ADF4112 7.5 6.5 mA max 6.5 mA typical.
ADF4113 11 8.5 mA max 8.5 mA typical.
IP 0.5 0.5 mA max TA = 25°C.
ADF4110: 540 MHz Output8 −91 −91 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency.
ADF4111: 900 MHz Output9 −87 −87 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency.
ADF4113: 900 MHz Output9 −91 −91 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency.
ADF4111: 836 MHz Output10 −78 −78 dBc/Hz typ @ 300 Hz offset and 30 kHz PFD frequency.
ADF4112: 1750 MHz Output11 −86 −86 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency.
ADF4112: 1750 MHz Output12 −66 −66 dBc/Hz typ @ 200 Hz offset and 10 kHz PFD frequency.
ADF4112: 1960 MHz Output13 −84 −84 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency.
ADF4113: 1960 MHz Output13 −85 −85 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency.
ADF4113: 3100 MHz Output
Spurious Signals
ADF4110: 540 MHz Output9 −97/−106 −97/−106 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency.
ADF4111: 900 MHz Output9 −98/−110 −98/−110 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency.
ADF4112: 900 MHz Output9 −91/−100 −91/−100 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency.
ADF4113: 900 MHz Output9 −100/−110 −100/−110 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency.
14
−86 −86 dBc/Hz typ @ 1 kHz offset and 1 MHz PFD frequency.
ADF4112: 1750 MHz Output11 −88/−90 −88/−90 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency.
ADF4112: 1750 MHz Output12 −65/−73 −65/−73 dBc typ @ 10 kHz/20 kHz and 10 kHz PFD frequency.
ADF4112: 1960 MHz Output13 −80/−84 −80/−84 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency.
ADF4113: 1960 MHz Output13 −80/−84 −80/−84 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency.
ADF4113: 3100 MHz Output14 −80/−82 −82/−82 dBc typ @ 1 MHz/2 MHz and 1 MHz PFD frequency.
1
The B chip specifications are given as typical values.
2
This is the maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the RF input is divided down to a frequency that
is less than this value.
3
AC coupling ensures AVDD/2 bias. See Figure 33 for a typical circuit.
4
Guaranteed by design.
5
TA = 25°C; AVDD = DVDD = 3 V; P = 16; SYNC = 0; DLY = 0; RFIN for ADF4110 = 540 MHz; RFIN for ADF4111, ADF4112, ADF4113 = 900 MHz.
6
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO, PN
value) and 10logF
7
The phase noise is measured with the EVAL-ADF411xEB1 evaluation board and the HP8562E spectrum analyzer. The spectrum analyzer provides the REFIN for the
synthesizer (f
8
f
= 10 MHz; f
REFIN
9
f
= 10 MHz; f
REFIN
10
f
= 10 MHz; f
REFIN
11
f
= 10 MHz; f
REFIN
12
f
= 10 MHz; f
REFIN
13
f
= 10 MHz; f
REFIN
14
f
= 10 MHz; f
REFIN
: PN
= PN
PFD
SYNTH
= 10 MHz @ 0 dBm). SYNC = 0; DLY = 0 (Table 7).
REFOUT
= 200 kHz; offset frequency = 1 kHz; fRF = 540 MHz; N = 2700; loop B/W = 20 kHz.
PFD
= 200 kHz; offset frequency = 1 kHz; fRF = 900 MHz; N = 4500; loop B/W = 20 kHz.
PFD
= 30 kHz; offset frequency = 300 Hz; fRF = 836 MHz; N = 27867; loop B/W = 3 kHz.
PFD
= 200 kHz; offset frequency = 1 kHz; fRF = 1750 MHz; N = 8750; loop B/W = 20 kHz
PFD
= 10 kHz; offset frequency = 200 Hz; fRF = 1750 MHz; N = 175000; loop B/W = 1 kHz.
PFD
= 200 kHz; offset frequency = 1 kHz; fRF = 1960 MHz; N = 9800; loop B/W = 20 kHz.
PFD
= 1 MHz; offset frequency = 1 kHz; fRF = 3100 MHz; N = 3100; loop B/W = 20 kHz.
PFD
– 10logF
TOT
– 20logN.
PFD
, and subtracting 20logN (where N is the N divider
TOT
Rev. D | Page 4 of 28
Data Sheet ADF4110/ADF4111/ADF4112/ADF4113
t1
10
ns min
DATA to CLOCK setup time
CLOCK
DATA
LE
LE
DB23 (MSB)DB22DB2
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
1
t
2
t
3
t
4
t
5
t
6
03496-002
TIMING CHARACTERISTICS
Guaranteed by design but not production tested. AVDD = DVDD = 3 V ± 10%, 5 V ± 10%; AVDD ≤ VP ≤ 6 V;
AGND = DGND = CPGND = 0 V; R
Table 2.
Parameter Limit at T
t2 10 ns min DATA to CLOCK hold time
t3 25 ns min CLOCK high duration
t4 25 ns min CLOCK low duration
t5 10 ns min CLOCK to LE setup time
t6 20 ns min LE pulse width
= 4.7 kΩ; TA = T
SET
to T
MIN
(B Version) Unit Test Conditions/Comments
MAX
MIN
to T
, unless otherwise noted.
MAX
Figure 2. Timing Diagram
Rev. D | Page 5 of 28
ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet
REFIN, RFINA, RFINB to GND
−0.3 V to VDD + 0.3 V
TSSOP θJA Thermal Impedance
150.4°C/W
Lead Temperature, Soldering
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted
Table 3.
Parameter Rating
AVDD to GND1 −0.3 V to +7 V
AVDD to DVDD −0.3 V to +0.3 V
VP to GND −0.3 V to +7 V
VP to AVDD −0.3 V to +5.5 V
Digital I/O Voltage to GND −0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND −0.3 V to VP + 0.3 V
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
RFINA to RFINB ±320 mV
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Maximum Junction Temperature 150°C
LFCSP θJA Thermal Impedance
(Paddle Soldered)
LFCSP θJA Thermal Impedance
(Paddle Not Soldered)
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
1
GND = AGND = DGND = 0 V.
122°C/W
216°C/W
TRANSISTOR COUNT
6425 (CMOS) and 303 (Bipolar).
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. D | Page 6 of 28
Data Sheet ADF4110/ADF4111/ADF4112/ADF4113
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
DV
DD
MUXOUT
LE
V
P
DATA
CLK
CE
DGND
R
SET
CP
CPGND
AGND
RF
IN
B
RF
IN
A
AV
DD
REF
IN
TOP VIEW
(Not to Scale)
ADF4110
ADF4111
ADF4112
ADF4113
03496-0-003
1
2
3
4
5
15
16
17
18
19
20
14
13
12
11
6
7
9108
CPGND
AGND
AGND
RF
IN
B
RF
IN
A
MUXOUT
NOTES
1. THE E X P OSED PADDLE S HOULD BE
CONNECTED T O AGND.
LE
DATA
CLK
CE
CP
R
SET
V
P
DV
DD
DV
DD
AVDDAV
DD
REF
IN
DGND
DGND
TOP VIEW
(Not to S cale)
ADF4110
ADF4111
ADF4112
ADF4
113
03496-004
SET
maxCP
R
I
5.23
=
7
6, 7
AVDD
Analog Power Supply. This may range from 2.7 V to 5.5 V. Decoupling capacitors to the analog ground
Connecting a resistor between this pin and CPGND sets the maximum charge pump output current.
The nominal voltage potential at the R
pin is 0.56 V. The relationship between I
SET
CP
and R
is
SET
2 20 CP
So, with R
Charge Pump Output. When enabled, this provides ±I
= 4.7 kΩ, I
SET
CPmax
= 5 mA.
drives the external VCO.
3 1 CPGND Charge Pump Ground. This is the ground return path for the charge pump.
4 2, 3 AGND Analog Ground. This is the ground return path of the prescaler.
5 4 RFINB
Complementary Input to the RF Prescaler. This point should be decoupled to the ground plane with
a small bypass capacitor, typically 100 pF. See Figure 29.
6 5 RFINA Input to the RF Prescaler. This small-signal input is ac-coupled from the VCO.
plane should be placed as close as possible to this pin. AVDD must be the same value as DVDD.
8 8 REFIN
Reference Input. This is a CMOS input with a nominal threshold of V
resistance of 100 kΩ. See Figure 28. This input can be driven from a TTL or CMOS crystal oscillator, or
can be ac-coupled.
9 9, 10 DGND Digital Ground.
Chip Enable. A logic low on this pin powers down the device and puts the charge pump output into
three-state mode. Taking the pin high powers up the device depending on the status of the power-
down Bit F2.
11 12 CLK
Serial Clock Input. This serial clock is used to clock in the serial data to the registers. The data is
latched into the 24-bit shift register on the CLK rising edge. This input is a high impedance CMOS
input.
12 13 DATA
Serial Data Input. The serial data is loaded MSB first with the two LSBs being the control bits. This
input is a high impedance CMOS input.
13 14 LE
14 15 MUXOUT
15 16, 17 DVDD
16 18 VP
EPAD Exposed Pad (LFCSP Only). The exposed paddle should be connected to AGND.
Load Enable, CMOS Input. When LE goes high, the data stored in the shift registers is loaded into
one of the four latches; the latch is selected using the control bits.
This multiplexer output allows either the lock detect, the scaled RF, or the scaled reference
frequency to be accessed externally.
Digital Power Supply. This may range from 2.7 V to 5.5 V. Decoupling capacitors to the digital ground
plane should be placed as close as possible to this pin. DV
Charge Pump Power Supply. This should be greater than or equal to V
V
can be set to 6 V and used to drive a VCO with a tuning range of up to 6 V. 1
P
Rev. D | Page 7 of 28
to the external loop filter, which in turn
CP
/2, and an equivalent input
DD
must be the same value as AVDD.
DD
. In systems where VDD is 3 V,
DD
ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet
FREQ PARAMDATAKEYWORDIMPEDANCE
–UNIT–TYPE –FORMAT–OHMS
GHzSMAR50
FREQ MAGS11 ANGS11
1.050.9512–40.134
1.100.93458–43.747
1.150.94782–44.393
1.200.96875–46.937
1.250.92216–49.6
1.300.93755–51.884
1.350.96178–51.21
1.400.94354–53.55
1.450.95189–56.786
1.500.97647–58.781
1.550.98619–60.545
1.600.95459–61.43
1.650.97945–61.241
1.700.98864–64.051
1.750.97399–66.19
1.800.97216–63.775
FREQ MAGS11 ANGS11
0.050.89207–2.0571
0.100.8886–4.4427
0.150.89022–6.3212
0.200.96323–2.1393
0.250.90566–12.13
0.300.90307–13.52
0.350.89318–15.746
0.400.89806–18.056
0.450.89565–19.693
0.500.88538–22.246
0.550.89699–24.336
0.600.89927–25.948
0.650.87797–28.457
0.700.90765–29.735
0.750.88526–31.879
0.800.81267–32.681
0.850.90357–31.522
0.900.92954–34.222
0.950.92087–36.961
1.000.93788–39.343
03496-0-005
–35
–30
–25
–20
–15
–10
–5
0
RF INPUT POWER (dBm)
012345
RF INPUT FREQUENCY (GHz)
03496-0-006
VDD = 3V
V
P
= 3V
T
A
= +85°C
T
A
= +25°C
TA = –40°C
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
OUTPUT POWER (dB)
–2.0kHz–1.0kHz900MHz1.0kHz2.0kHz
FREQUENCY
03496-0-007
VDD = 3V, VP = 5V
I
CP
= 5mA
PFD FREQUENCY = 200kHz
LOOP BANDWIDTH = 20kHz
RES. BANDWIDTH = 10Hz
VIDEO BANDWIDTH = 10Hz
SWEEP = 1.9 s
AVERAGES = 19
REFERENCE
LEVEL = –4.2dBm
–91.0dBc/Hz
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
OUTPUT POWER (dB)
–2.0kHz–1.0kHz900MHz1.0kHz2.0kHz
FREQUENCY
03496-0-008
VDD = 3V, VP = 5V
I
CP
= 5mA
PFD FREQUENCY = 200kHz
LOOP BANDWIDTH = 20kHz
RES. BANDWIDTH = 10Hz
VIDEO BANDWIDTH = 10Hz
SWEEP = 1.9 s
AVERAGES = 19
REFERENCE
LEVEL = –4.2dBm
–92.5dBc/Hz
–140
–130
–120
–1
10
–100
–90
–80
–70
–60
–50
–40
PHASE NOISE (dBc/Hz)
FREQUENCY OFFSET FROM 900MHz CARRIER (Hz)
1k10010k100k1M
03496-0-009
RMS NOISE = 0.52°
R
L
= –40dBc/Hz
–140
–130
–120
–110
–100
–90
–80
–70
–60
–50
–40
PHASE NOISE (dBc/Hz)
FREQUENCY OFFSET FROM 900MHz CARRIER (Hz)
1k10010k100k1M
03496-0-010
RMS NOISE = 0.62°
R
L
= –40dBc/Hz
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 5. S-Parameter Data for the ADF4113 RF Input (up to 1.8 GHz)
(900 MHz, 200kHz, 20 kHz) with DLY and SYNC Enabled