−3 dB bandwidth: 190 MHz, G = +5
Slew rate: 820 V/μs, R
Wide output swing
20.4 V p-p differential, R
High output current
Low distortion
−95 dBc typical at 1 MHz, V
−69 dBc typical at 10 MHz, V
Power management and shutdown
Control inputs CMOS level compatible
Shutdown quiescent current 0.65 mA/amplifier
Adjustable low quiescent current: 3.9 mA to 7.6 mA per amp
APPLICATIONS
Home networking line drivers
Twisted pair line drivers
Power line communications
Video line drivers
ARB line drivers
I/Q channel amplifiers
= 50 Ω
LOAD
of 100 Ω from 12 V supply
LOAD
= 2 V p-p, G = +5, R
OUT
= 2 V p-p, G = +5, R
OUT
LOAD
LOAD
= 50 Ω
= 50 Ω
Line Driver with Shutdown
ADA4310-1
PIN CONFIGURATIONS
+V
1
S
2
NC
3
OUT A
–IN A
4
+IN A
5
NC = NO CONNECT
Figure 1. Thermally Enhanced, 10-Lead MINI_SO_EP
OUT
16
1NC
2−IN A
3+IN A
4GND
NC = NO CONNECT
5
NC
Figure 2. Thermally Enhanced, 4 mm × 4 mm 16-Lead LFCSP_VQ
OUT B
10
9
–IN B
8
+IN B
PD1
7
PD0
6
S
OUT
NC
+V
14
13
15
12 NC
11 −IN B
10 +IN B
9PD1
8
7
6
S
NC
–V
PD0
06027-001
06027-002
GENERAL DESCRIPTION
The ADA4310-1 is comprised of two high speed, current
feedback operational amplifiers. The high output current, high
bandwidth, and fast slew rate make it an excellent choice for
broadband applications requiring high linearity performance
while driving low impedance loads.
The ADA4310-1 incorporates a power management function
that provides shutdown capabilities and/or the ability to
optimize the amplifiers quiescent current. The CMOScompatible, power-down control pins (PD1 and PD0) enable
the ADA4310-1 to operate in four different modes: full power,
medium power, low power, and complete power down. In the
power-down mode, quiescent current drops to only
0.65 mA/amplifier, while the amplifier output goes to a high
impedance state.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
The ADA4310-1 is available in a thermally enhanced, 10-lead
MSOP with an exposed paddle for improved thermal conduction
and in a thermally enhanced, 4 mm × 4 mm 16-lead LFCSP.
The ADA4310-1 is rated to work in the extended industrial
temperature range of −40°C to +85°C.
Parameter Test Conditions/Comments Min Typ Max Unit
POWER DOWN PINS
PD1, PD0 Threshold Referenced to GND 1.5 V
PD1, PD0 = 0 Pin Bias Current PD1 or PD0 = 0 V −0.2 μA
PD1, PD0 = 1 Pin Bias Current PD1 or PD0 = 3 V 70 μA
Enable/Disable Time 0.04/2 μs
Power Supply Rejection Ratio Positive/Negative −70/−60 dB
Rev. 0 | Page 4 of 16
ADA4310-1
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage
10-Lead MINI_SO_EP 12 V
16-Lead LFCSP_VQ ±6V
Power Dissipation (T
JMAX
− TA)/θ
JA
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature (Soldering 10 sec) 300°C
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is
specified for device soldered in circuit board for surface-mount
packages.
The maximum safe power dissipation for the ADA4310-1 is
limited by the associated rise in junction temperature (T
) on
J
the die. At approximately 150°C, which is the glass transition
temperature, the plastic changes its properties. Even temporarily
exceeding this temperature limit can change the stresses that the
package exerts on the die, permanently shifting the parametric
performance of the amplifiers. Exceeding a junction temperature of
150°C for an extended period can result in changes in silicon
devices, potentially causing degradation or loss of functionality.
Figure 4 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 10-lead
MINI_SO_EP (44°C/W) and for the 16-lead LFCSP_VQ
(63°C/W) on a JEDEC standard 4-layer board. θ
values are
JA
approximations.
5.0
4.5
4.0
3.5
3.0
2.5
LFCSP_VQ-16
2.0
1.5
1.0
MAXIMUM POW ER DISSIP ATION (W )
0.5
0
–35–15525456585
Figure 4. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
MINI_SO_E P-10
AMBIENT TEMPERATURE (°C)
06027-016
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 5 of 16
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