Low offset voltage: 1 μV
Input offset drift: 0.005 μV/°C
Rail-to-rail input and output swing
5 V/2.7 V single-supply operation
High gain, CMRR, PSRR: 130 dB
Ultralow input bias current: 20 pA
Low supply current: 700 μA/op amp
Overload recovery time: 50 μs
No external capacitors required
APPLICATIONS
Temperature sensors
Pressure sensors
Precision current sensing
Strain gage amplifiers
Medical instrumentation
Thermocouple amplifiers
GENERAL DESCRIPTION
This family of amplifiers has ultralow offset, drift, and bias
current. The AD8551, AD8552, and AD8554 are single, dual,
and quad amplifiers featuring rail-to-rail input and output swings.
All are guaranteed to operate from 2.7 V to 5 V with a single supply.
The AD855x family provides the benefits previously found only
in expensive auto-zeroing or chopper-stabilized amplifiers.
Using Analog Devices, Inc. topology, these new zero-drift
amplifiers combine low cost with high accuracy. No external
capacitors are required.
AD8551/AD8552/AD8554
PIN CONFIGURATIONS
18
NC
IN
AD8551
IN
V–
45
NC = NO CONNECT
Figure 1. 8-Lead MSOP (RM Suffix)
1
NC
–IN A
2
AD8551
+IN
3
V–
4
NC = NO CONNECT
Figure 2. 8-Lead SOIC (R Suffix)
OUT A
–IN A
+IN A
18
AD8552
V–
45
Figure 3. 8-Lead TSSOP (RU Suffix)
1
OUT A
–IN A
2
AD8552
+IN A
3
V–
4
Figure 4. 8-Lead SOIC (R Suffix)
OUT A
–IN A
+IN A
+IN B
–IN B
OUT B
114
V+
AD8554
78
Figure 5. 14-Lead TSSOP (RU Suffix)
8
7
6
5
8
7
6
5
NC
V+
OUT A
NC
NC
V+
OUT A
NC
V+
OUT B
–IN B
+IN B
V+
OUT B
–IN B
+IN B
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
1101-001
1101-002
01101-003
01101-004
1101-005
With an offset voltage of only 1 μV and drift of 0.005 μV/°C, the
AD855x are perfectly suited for applications in which error
sources cannot be tolerated. Temperature, position and pressure
sensors, medical equipment, and strain gage amplifiers benefit
greatly from nearly zero drift over their operating temperature
range. The rail-to-rail input and output swings provided by the
AD855x family make both high-side and low-side sensing easy.
The AD855x family is specified for the extended industrial/auto
OUT A
–IN A
+IN A
V+
+IN B
–IN B
OUT B
Figure 6. 14-Lead SOIC (R Suffix)
motive temperature range (−40°C to +125°C). The AD8551
single amplifier is available in 8-lead MSOP and 8-lead narrow
SOIC packages. The AD8552 dual amplifier is available in 8-lead
narrow SOIC and 8-lead TSSOP surface-mount packages. The
AD8554 quad is available in 14-lead narrow SOIC and 14-lead
TSSOP packages.
Rev. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
VS = 5 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS 1 5 μV
−40°C ≤ TA ≤ +125°C 10 μV
Input Bias Current IB 10 50 pA
AD8551/AD8554 −40°C ≤ TA ≤ +125°C 1.0 1.5 nA
AD8552 −40°C ≤ TA ≤ +85°C 160 300 pA
AD8552 −40°C ≤ TA ≤ +125°C 2.5 4 nA
Input Offset Current IOS 20 70 pA
AD8551/AD8554 −40°C ≤ TA ≤ +125°C 150 200 pA
AD8552 −40°C ≤ TA ≤ +85°C 30 150 pA
AD8552 −40°C ≤ TA ≤ +125°C 150 400 pA
Input Voltage Range 0 5 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to +5 V 120 140 dB
−40°C ≤ TA ≤ +125°C 115 130 dB
Large Signal Voltage Gain1 AVO RL = 10 kΩ, VO = 0.3 V to 4.7 V 125 145 dB
−40°C ≤ TA ≤ +125°C 120 135 dB
Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 0.005 0.04 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 100 kΩ to GND 4.99 4.998 V
R
R
R
Output Voltage Low V
R
R
R
Output Short-Circuit Limit Current ISC ±25 ±50 mA
−40°C to +125°C ±40 mA
Output Current IO ±30 mA
−40°C to +125°C ±15 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 120 130 dB
−40°C ≤ TA ≤ +125°C 115 130 dB
Supply Current/Amplifier ISY VO = 0 V 850 975 μA
−40°C ≤ TA ≤ +125°C 1000 1075 μA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.4 V/μs
Overload Recovery Time 0.05 0.3 ms
Gain Bandwidth Product GBP 1.5 MHz
NOISE PERFORMANCE
Voltage Noise en p-p 0 Hz to 10 Hz 1.0 μV p-p
e
Voltage Noise Density en f = 1 kHz 42 nV/√Hz
Current Noise Density in f = 10 Hz 2 fA/√Hz
1
Gain testing is dependent upon test bandwidth.
R
OL
p-p 0 Hz to 1 Hz 0.32 μV p-p
n
= 100 kΩ to GND @ −40°C to +125°C 4.99 4.997 V
L
= 10 kΩ to GND 4.95 4.98 V
L
= 10 kΩ to GND @ −40°C to +125°C 4.95 4.975 V
L
= 100 kΩ to V+ 1 10 mV
L
= 100 kΩ to V+ @ −40°C to +125°C 2 10 mV
L
= 10 kΩ to V+ 10 30 mV
L
= 10 kΩ to V+ @ −40°C to +125°C 15 30 mV
L
Rev. D | Page 3 of 24
AD8551/AD8552/AD8554
www.BDTIC.com/ADI
VS = 2.7 V, VCM = 1.35 V, VO = 1.35 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS 1 5 μV
−40°C ≤ TA ≤ +125°C 10 μV
Input Bias Current IB 10 50 pA
AD8551/AD8554 −40°C ≤ TA ≤ +125°C 1.0 1.5 nA
AD8552 −40°C ≤ TA ≤ +85°C 160 300 pA
AD8552 −40°C ≤ TA ≤ +125°C 2.5 4 nA
Input Offset Current I
AD8551/AD8554 −40°C ≤ TA ≤ +125°C 150 200 pA
AD8552 −40°C ≤ TA ≤ +85°C 30 150 pA
AD8552 −40°C ≤ TA ≤ +125°C 150 400 pA
Input Voltage Range 0 2.7 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.7 V 115 130 dB
−40°C ≤ TA ≤ +125°C 110 130 dB
Large Signal Voltage Gain1 AVO RL = 10 kΩ, VO = 0.3 V to 2.4 V 110 140 dB
−40°C ≤ TA ≤ +125°C 105 130 dB
Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 0.005 0.04 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 100 kΩ to GND 2.685 2.697 V
R
R
R
Output Voltage Low VOL RL = 100 kΩ to V+ 1 10 mV
R
R
R
Short-Circuit Limit ISC ±10 ±15 mA
−40°C to +125°C ±10 mA
Output Current IO ±10 mA
−40°C to +125°C ±5 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 120 130 dB
−40°C ≤ TA ≤ +125°C 115 130 dB
Supply Current/Amplifier ISY VO = 0 V 750 900 μA
−40°C ≤ TA ≤ +125°C 950 1000 μA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.5 V/μs
Overload Recovery Time 0.05 ms
Gain Bandwidth Product GBP 1 MHz
NOISE PERFORMANCE
Voltage Noise en p-p 0 Hz to 10 Hz 1.6 μV p-p
Voltage Noise Density en f = 1 kHz 75 nV/√Hz
Current Noise Density in f = 10 Hz 2 fA/√Hz
1
Gain testing is dependent upon test bandwidth.
10 50 pA
OS
= 100 kΩ to GND @ −40°C to +125°C 2.685 2.696 V
L
= 10 kΩ to GND 2.67 2.68 V
L
= 10 kΩ to GND @ −40°C to +125°C 2.67 2.675 V
L
= 100 kΩ to V+ @ −40°C to +125°C 2 10 mV
L
= 10 kΩ to V+ 10 20 mV
L
= 10 kΩ to V+ @ −40°C to +125°C 15 20 mV
L
Rev. D | Page 4 of 24
AD8551/AD8552/AD8554
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 6 V
Input Voltage GND to VS + 0.3 V
Differential Input Voltage1 ±5.0 V
ESD (Human Body Model) 2000 V
Output Short-Circuit Duration to GND Indefinite
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +125°C
Junction Temperature Range −65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) 300°C
1
Differential input voltage is limited to ±5.0 V or the supply voltage,