Analog Devices AD8551AR, AD8554AR, AD8552ARU, AD8552AR, AD8551ARM Datasheet

Zero-Drift, Single-Supply,

1 2 3 4

8 7 6 5

AD8551

2IN A

V2

+IN A

V+ OUT A

NC

NC = NO CONNECT

1 2 3 4

8 7 6 5

AD8552

2IN A

V2

+IN A

OUT B

2IN B

V+

+IN B

OUT A

14

13

12

11

10

9

8

1

2

3

4

5

6

7

2IN A

+IN A

V+

+IN B

2IN B

OUT B

OUT D

2IN D

+IN D

V2

+IN C

2IN C

OUT C

OUT A

AD8554

2IN A 1IN A

V2

V+ OUT A

NC

1

45

8

AD8551

NC

NC = NO CONNECT

NC

Rail-to-Rail Input/Output

a

FEATURES Low Offset Voltage: 1 ␮V Input Offset Drift: 0.005 ␮V/ⴗC Rail-to-Rail Input and Output Swing +5 V/+2.7 V Single-Supply Operation High Gain, CMRR, PSRR: 130 dB Ultralow Input Bias Current: 20 pA Low Supply Current: 700 ␮A/Op Amp Overload Recovery Time: 50 ␮s No External Capacitors Required

APPLICATIONS Temperature Sensors Pressure Sensors Precision Current Sensing Strain Gage Amplifiers Medical Instrumentation Thermocouple Amplifiers

GENERAL DESCRIPTION

This new family of amplifiers has ultralow offset, drift and bias current. The AD8551, AD8552 and AD8554 are single, dual and quad amplifiers featuring rail-to-rail input and output swings. All are guaranteed to operate from +2.7 V to +5 V single supply.

The AD855x family provides the benefits previously found only in expensive autozeroing or chopper-stabilized amplifiers. Using Analog Devices’ new topology these new zero-drift amplifiers combine low cost with high accuracy. No external capacitors are required.

With an offset voltage of only 1 µV and drift of 0.005 µV/°C,

the AD8551 is perfectly suited for applications where error sources cannot be tolerated. Temperature, position and pressure sensors, medical equipment and strain gage amplifiers benefit greatly from nearly zero drift over their operating temperature range. The rail-to-rail input and output swings provided by the AD855x family make both high-side and lowside sensing easy.

The AD855x family is specified for the extended industrial/

automotive (–40°C to +125°C) temperature range. The AD8551

single is available in 8-lead MSOP and narrow 8-lead SOIC packages. The AD8552 dual amplifier is available in 8-lead narrow SO and 8-lead TSSOP surface mount packages. The AD8554 quad is available in narrow 14-lead SOIC and 14-lead TSSOP packages.

AD8551/AD8552/AD8554

8-Lead MSOP

(RM Suffix)

8-Lead TSSOP

(RU Suffix)

OUT A

2IN A

+IN A

OUT A

2IN A 1IN A

1IN B 2IN B

OUT B

1

AD8552

4

V2

14-Lead TSSOP

(RU Suffix)

1

V1

AD8554

78

Operational Amplifiers

PIN CONFIGURATIONS

8-Lead SOIC

(R Suffix)

8-Lead SOIC

(R Suffix)

8

V+ OUT B

2IN B

+IN B

5

14-Lead SOIC

(R Suffix)

OUT D

14

2IN D 1IN D V2 1IN C 2IN C

OUT C

REV. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1999

AD8551/AD8552/AD8554–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(VS = +5 V, VCM = +2.5 V, VO = +2.5 V, TA = +25ⴗC unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS␣

Offset Voltage V

Input Bias Current I

Input Offset Current I

B

OS

–40°C ≤ T –40°C ≤ T –40°C ≤ T

≤ +125°C10µV

A

≤ +125°C 1.0 1.5 nA

A

≤ +125°C 150 200 pA

A

15 µV

10 50 pA

20 70 pA

Input Voltage Range 05V Common-Mode Rejection Ratio CMRR V

Large Signal Voltage Gain

1

A

VO

= 0 V to +5 V 120 140 dB

CM

–40°C ≤ T

R

= 10 kΩ, V

L

–40°C ≤ T

≤ +125°C 115 130 dB

A

= +0.3 V to +4.7 V 125 145 dB

O

≤ +125°C 120 135 dB

A

Offset Voltage Drift ∆VOS/∆T –40°C ≤ TA ≤ +125°C 0.005 0.04 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage High V

OH

R

= 100 kΩ to GND 4.99 4.998 V

L

–40°C to +125°C 4.99 4.997 V

= 10 kΩ to GND 4.95 4.98 V

R

L

–40°C to +125°C 4.95 4.975 V

R

Output Voltage Low V

OL

= 100 kΩ to V+ 1 10 mV

L

–40°C to +125°C210mV

= 10 kΩ to V+ 10 30 mV

R

L

–40°C to +125°C1530mV

Short Circuit Limit I

SC

±25 ±50 mA

–40°C to +125°C ±40 mA

Output Current I

O

±30 mA

–40°C to +125°C ±15 mA

POWER SUPPLY␣

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

SY

= +2.7 V to +5.5 V 120 130 dB

S

–40°C ≤ T

V

= 0 V 850 975 µA

O

≤ +125°C 115 130 dB

A

–40°C ≤ TA ≤ +125°C 1,000 1,075 µA

DYNAMIC PERFORMANCE␣

Slew Rate SR R

= 10 kΩ 0.4 V/µs

L

Overload Recovery Time 0.05 0.3 ms Gain Bandwidth Product GBP 1.5 MHz

NOISE PERFORMANCE␣

Voltage Noise e

Voltage Noise Density e Current Noise Density i

NOTE

1

Gain testing is highly dependent upon test bandwidth.

Specifications subject to change without notice.

p-p 0 Hz to 10 Hz 1.0 µV p-p

n

p-p 0 Hz to 1 Hz 0.32 µV p-p

e

n

f = 1 kHz 42 nV/√Hz f = 10 Hz 2 fA/√Hz

–2– REV. 0

AD8551/AD8552/AD8554

ELECTRICAL CHARACTERISTICS

(VS = +2.7 V, VCM = +1.35 V, VO = +1.35 V, TA = +25ⴗC unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS␣

Offset Voltage V

Input Bias Current I

Input Offset Current I

B

OS

–40°C ≤ T –40°C ≤ T –40°C ≤ T

≤ +125°C10µV

A

≤ +125°C 1.0 1.5 nA

A

≤ +125°C 150 200 pA

A

15 µV

10 50 pA

Input Voltage Range 0 2.7 V Common-Mode Rejection Ratio CMRR V

Large Signal Voltage Gain

1

A

VO

= 0 V to +2.7 V 115 130 dB

CM

–40°C ≤ T

R

= 10 kΩ, V

L

–40°C ≤ T

≤ +125°C 110 130 dB

A

= +0.3 V to +2.4 V 110 140 dB

O

≤ +125°C 105 130 dB

A

Offset Voltage Drift ∆VOS/∆T –40°C ≤ TA ≤ +125°C 0.005 0.04 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage High V

OH

R

= 100 kΩ to GND 2.685 2.697 V

L

–40°C to +125°C 2.685 2.696 V

= 10 kΩ to GND 2.67 2.68 V

R

L

–40°C to +125°C 2.67 2.675 V

R

Output Voltage Low V

OL

= 100 kΩ to V+ 1 10 mV

L

–40°C to +125°C210mV

= 10 kΩ to V+ 10 20 mV

R

L

–40°C to +125°C1520mV

Short Circuit Limit I

SC

±10 ±15 mA

–40°C to +125°C ±10 mA

Output Current I

O

±10 mA

–40°C to +125°C ±5mA

POWER SUPPLY␣

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

SY

= +2.7 V to +5.5 V 120 130 dB

S

–40°C ≤ T

V

= 0 V 750 900 µA

O

≤ +125°C 115 130 dB

A

–40°C ≤ TA ≤ +125°C 950 1,000 µA

DYNAMIC PERFORMANCE␣

Slew Rate SR R

= 10 kΩ 0.5 V/µs

L

Overload Recovery Time 0.05 ms Gain Bandwidth Product GBP 1 MHz

NOISE PERFORMANCE␣

Voltage Noise e Voltage Noise Density e Current Noise Density i

NOTE

1

Gain testing is highly dependent upon test bandwidth.

Specifications subject to change without notice.

p-p 0 Hz to 10 Hz 1.6 µV p-p

n

f = 1 kHz 75 nV/√Hz f = 10 Hz 2 fA/√Hz

–3–REV. 0

AD8551/AD8552/AD8554

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6 V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . GND to V

Differential Input Voltage

2

. . . . . . . . . . . . . . . . . . . . . . ±5.0 V

ESD(Human Body Model) . . . . . . . . . . . . . . . . . . . . . 2,000 V

Output Short-Circuit Duration to GND . . . . . . . . . Indefinite

Storage Temperature Range

RM, RU and R Packages . . . . . . . . . . . . . –65°C to +150°C

Operating Temperature Range

AD8551A/AD8552A/AD8554A . . . . . . . . –40°C to +125°C

Junction Temperature Range

RM, RU and R Packages . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

2

Differential input voltage is limited to ±5.0 V or the supply voltage, whichever is less.

1

+ 0.3 V

S

ORDERING GUIDE

Package Type ␪

1

JA

␪

JC

Units

8-Lead MSOP (RM) 190 44 °C/W 8-Lead TSSOP (RU) 240 43 °C/W 8-Lead SOIC (R) 158 43 °C/W 14-Lead TSSOP (RU) 180 36 °C/W 14-Lead SOIC (R) 120 36 °C/W

NOTE

1

θJA is specified for worst case conditions, i.e., θ

for P-DIP packages, θ

SOIC and TSSOP packages.

is specified for device soldered in circuit board for

JA

is specified for device in socket

JA

Temperature Package Package

Model Range Description Option Brand

AD8551ARM

2

–40°C to +125°C 8-Lead MSOP RM-8 AHA

AD8551AR –40°C to +125°C 8-Lead SOIC SO-8

AD8552ARU

3

–40°C to +125°C 8-Lead TSSOP RU-8

AD8552AR –40°C to +125°C 8-Lead SOIC SO-8

AD8554ARU

3

–40°C to +125°C 14-Lead TSSOP RU-14

AD8554AR –40°C to +125°C 14-Lead SOIC SO-14

NOTES

1

Due to package size limitations, these characters represent the part number.

2

Available in reels only. 1,000 or 2,500 pieces per reel.

3

Available in reels only. 2,500 pieces per reel.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8551/AD8552/AD8554 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

1

–4– REV. 0

INPUT COMMON-MODE VOLTAGE – V

INPUT BIAS CURRENT – pA

1,500

22,000

01

5

234

1,000

500

0

21,000

21,500

2500

VSY = +5V T

A

= +1258C

LOAD CURRENT – mA

10

0.1

0.001

OUTPUT VOLTAGE – mV

0.1

110

1

100

10k

100

1k

0.0001 0.01

SOURCE

SINK

VSY = +5V T

A

= +258C

TEMPERATURE – 8C

SUPPLY CURRENT – mA

1.0

0.8

0

275 250

125

225

0

25 50 75 100

0.6

0.4

0.2

150

+5V

+2.7V

Typical Performance Characteristics–

AD8551/AD8552/AD8554

180 160

140

120 100

80 60

NUMBER OF AMPLIFIERS

40

20

0

21.5 20.5

22.5

OFFSET VOLTAGE – mV

0.5

VSY = +2.7V

= +1.35V

V

CM

= +258C

T

A

1.5

2.5

Figure 1. Input Offset Voltage Distribution at +2.7 V

180 160

140

120 100

80 60

NUMBER OF AMPLIFIERS

40

20

0

22.5

21.5 20.5

OFFSET VOLTAGE – mV

VSY = +5V

= +2.5V

V

CM

T

= +258C

A

0.5 2.5

1.5

Figure 4. Input Offset Voltage Distribution at +5 V

50

VSY = +5V

40

= 2408C, +258C, +858C

T

A

30

20

10

0

210

INPUT BIAS CURRENT – pA

220

230

01

INPUT COMMON-MODE VOLTAGE – V

234

+858C

+258C

2408C

Figure 2. Input Bias Current vs. Common-Mode Voltage

12

VSY = +5V

= +2.5V

10

8

6

4

NUMBER OF AMPLIFIERS

2

0

01 6

INPUT OFFSET DRIFT – nV/8C

V

CM

T

= 2408C TO +1258C

A

234 5

Figure 5. Input Offset Voltage Drift Distribution at +5 V

5

Figure 3. Input Bias Current vs. Common-Mode Voltage

Figure 6. Output Voltage to Supply Rail vs. Output Current at +5 V

10k

1k

100

10

OUTPUT VOLTAGE – mV

1

0.1

0.0001 0.01

Figure 7. Output Voltage to Supply Rail vs. Output Current at +2.7 V

VSY = +2.7V

= +258C

T

A

SOURCE

0.001

0.1

LOAD CURRENT – mA

SINK

110

100

0

VCM = +2.5V

= +5V

V

SY

2250

2500

2750

INPUT BIAS CURRENT – pA

21000

275 250

225

0 25 50 75 100

TEMPERATURE – 8C

125

150

Figure 8. Bias Current vs. Temperature

–5–REV. 0

Figure 9. Supply Current vs. Temperature

AD8551/AD8552/AD8554

g

FREQUENCY – Hz

OPEN-LOOP GAIN – dB

10k 100k 100M1M 10M

60 50

240

40 30 20 10

0

210 220 230

45 90 135 180 225 270

0

PHASE SHIFT – Degrees

VSY = +5V C

L

= 0pF

R

L

=

FREQUENCY – Hz

OUTPUT IMPEDANCE – V

100 1k 10M10k 100k 1M

300 270

0

240 210 180 150 120

90 60 30

VSY = +2.7V

AV = 100

AV = 1

AV = 10

5ms

1V

VSY = +5V C

L

= 300pF

R

L

= 2kV

A

V

= +1

800

TA = +258C

700

600

500

400

300

200

100

SUPPLY CURRENT PER AMPLIFIER – mA

0

16

2345

SUPPLY VOLTAGE – V

Figure 10. Supply Current vs. Supply Voltage

60 50 40

AV = 2100

30 20

AV = 210

10

0

AV = +1

210

CLOSED-LOOP GAIN – dB

220 230 240

100 1k 10M10k 100k 1M

FREQUENCY – Hz

VSY = +2.7V

= 0pF

C

L

R

= 2kV

L

Figure 13. Closed Loop Gain vs. Frequency at +2.7 V

60

VSY = +2.7V

50 40 30 20 10

210

OPEN-LOOP GAIN – dB

220 230 240

= 0pF

C

L

R

=

L

0

10k 100k 100M1M 10M

FREQUENCY – Hz

Figure 11. Open-Loop Gain and Phase Shift vs. Frequency at +2.7 V

60 50 40

AV = 2100

30 20

AV = 210

10

0

AV = +1

210

CLOSED-LOOP GAIN – dB

220 230

240

100 1k 10M10k 100k 1M

FREQUENCY – Hz

VSY = +5V

= 0pF

C

L

R

= 2kV

L

Figure 14. Closed Loop Gain vs. Frequency at +5 V

0

rees

45 90 135 180 225

PHASE SHIFT – De

270

Figure 12. Open-Loop Gain and Phase Shift vs. Frequency at +5 V

Figure 15. Output Impedance vs. Frequency at +2.7 V

300

VSY = +5V

270 240 210 180 150 120

90

OUTPUT IMPEDANCE – V

60 30

0

100 1k 10M10k 100k 1M

Figure 16. Output Impedance vs. Frequency at +5 V

AV = 100

FREQUENCY – Hz

AV = 10

AV = 1

VSY = +2.7V

= 300pF

C

L

= 2kV

R

L

= +1

A

V

2ms

500mV

Figure 17. Large Signal Transient Response at +2.7 V

–6– REV. 0

Figure 18. Large Signal Transient Response at +5 V