How it Works
Analog Devices
Loading...
AD8551 2 4 a
Datasheet
20 pgs355.33 Kb0
Table of contents
Loading...

Analog Devices AD8551 2 4 a Datasheet

Zero-Drift, Single-Supply,
IN AIN A
V
V+ OUT A
NC
1
45
8
AD8551
NC
NC = NO CONNECT
NC
IN A
+IN A
V
OUT B IN B +IN B
V+
1
4
5
8
AD8552
OUT A
OUT A
IN AIN A
V
IN D
IN D
V
OUT D
IN BIN B
OUT B
IN C OUT C
IN C
AD8554
1
14
78
Rail-to-Rail Input/Output
a
FEATURES Low Offset Voltage: 1 V Input Offset Drift: 0.005 V/C Rail-to-Rail Input and Output Swing +5 V/+2.7 V Single-Supply Operation High Gain, CMRR, PSRR: 130 dB Ultralow Input Bias Current: 20 pA Low Supply Current: 700 A/Op Amp Overload Recovery Time: 50 s No External Capacitors Required
APPLICATIONS Temperature Sensors Pressure Sensors Precision Current Sensing Strain Gage Amplifiers Medical Instrumentation Thermocouple Amplifiers

GENERAL DESCRIPTION

This new family of amplifiers has ultralow offset, drift and bias current. The AD8551, AD8552 and AD8554 are single, dual and quad amplifiers featuring rail-to-rail input and output swings. All are guaranteed to operate from +2.7 V to +5 V single supply.
The AD855x family provides the benefits previously found only in expensive autozeroing or chopper-stabilized amplifiers. Using Analog Devices’ new topology these new zero-drift amplifiers combine low cost with high accuracy. No external capacitors are required.
With an offset voltage of only 1 µV and drift of 0.005 µV/°C, the AD8551 is perfectly suited for applications where error sources cannot be tolerated. Temperature, position and pres­sure sensors, medical equipment and strain gage amplifiers benefit greatly from nearly zero drift over their operating temperature range. The rail-to-rail input and output swings provided by the AD855x family make both high-side and low­side sensing easy.
The AD855x family is specified for the extended industrial/ automotive (–40°C to +125°C) temperature range. The AD8551 single is available in 8-lead MSOP and narrow 8-lead SOIC packages. The AD8552 dual amplifier is available in 8-lead narrow SO and 8-lead TSSOP surface mount packages. The AD8554 quad is available in narrow 14-lead SOIC and 14-lead TSSOP packages.
Operational Amplifiers
AD8551/AD8552/AD8554

PIN CONFIGURATIONS

8-Lead MSOP
(RM Suffix)
8-Lead TSSOP
(RU Suffix)
14-Lead TSSOP
(RU Suffix)
8-Lead SOIC
(R Suffix)
1
NC
IN A
2
+IN A
3
V
4
NC = NO CONNECT
8-Lead SOIC
(R Suffix)
1
OUT A
IN A
2
3
+IN A
V
4
14-Lead SOIC
(R Suffix)
OUT A
1
IN A
2
+IN A
3
V+
4
+IN B
IN B
OUT B
AD8554
5
6
7
AD8551
AD8552
8
7
6
5
8
7
6
5
14
13
12
11
10
9
8
NC
V+
OUT A
NC
V+
OUT B
IN B
+IN B
OUT D
IN D
+IN D
V
+IN C
IN C
OUT C
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2002 Analog Devices, Inc. All rights reserved.
AD8551/AD8552/AD8554–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(VS = +5 V, VCM = +2.5 V, VO = +2.5 V, TA = +25C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
B
OS
OS
–40°C ≤ T
–40°C ≤ T
–40°C ≤ T
≤ +125°C10µV
A
≤ +125°C 1.0 1.5 nA
A
≤ +125°C 150 200 pA
A
15 µV
10 50 pA
20 70 pA
Input Voltage Range 05V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain
1
A
VO
= 0 V to +5 V 120 140 dB
CM
–40°C ≤ T
≤ +125°C 115 130 dB
A
RL = 10 kΩ, VO = +0.3 V to +4.7 V 125 145 dB –40°C ≤ T
≤ +125°C 120 135 dB
A
Offset Voltage Drift ∆VOS/∆T –40°C ≤ TA ≤ +125°C 0.005 0.04 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
RL = 100 kΩ to GND 4.99 4.998 V –40°C to +125°C 4.99 4.997 V
= 10 kΩ to GND 4.95 4.98 V
R
L
–40°C to +125°C 4.95 4.975 V
Output Voltage Low V
OL
RL = 100 kΩ to V+ 1 10 mV –40°C to +125°C210mV
= 10 kΩ to V+ 10 30 mV
R
L
–40°C to +125°C1530mV
Short Circuit Limit I
SC
±25 ±50 mA
–40°C to +125°C ±40 mA
Output Current I
O
±30 mA
–40°C to +125°C ±15 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = +2.7 V to +5.5 V 120 130 dB
Supply Current/Amplifier I
SY
–40°C ≤ T VO = 0 V 850 975 µA
≤ +125°C 115 130 dB
A
–40°C ≤ TA ≤ +125°C 1,000 1,075 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.4 V/µs Overload Recovery Time 0.05 0.3 ms Gain Bandwidth Product GBP 1.5 MHz
NOISE PERFORMANCE
Voltage Noise en p-p 0 Hz to 10 Hz 1.0 µV p-p
e
p-p 0 Hz to 1 Hz 0.32 µV p-p
Voltage Noise Density e Current Noise Density i
NOTE
1
Gain testing is highly dependent upon test bandwidth.
Specifications subject to change without notice.
n
n
n
f = 1 kHz 42 nV/√Hz f = 10 Hz 2 fA/√Hz
–2–
REV. A
AD8551/AD8552/AD8554
ELECTRICAL CHARACTERISTICS
(VS = +2.7 V, VCM = +1.35 V, VO = +1.35 V, TA = +25C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
B
OS
OS
–40°C ≤ T
–40°C ≤ T
–40°C ≤ T
≤ +125°C10µV
A
≤ +125°C 1.0 1.5 nA
A
≤ +125°C 150 200 pA
A
15 µV
10 50 pA
10 50 pA
Input Voltage Range 0 2.7 V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain
1
A
VO
= 0 V to +2.7 V 115 130 dB
CM
–40°C ≤ T
≤ +125°C 110 130 dB
A
RL = 10 kΩ, VO = +0.3 V to +2.4 V 110 140 dB –40°C ≤ T
≤ +125°C 105 130 dB
A
Offset Voltage Drift ∆VOS/∆T –40°C ≤ TA ≤ +125°C 0.005 0.04 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
RL = 100 kΩ to GND 2.685 2.697 V –40°C to +125°C 2.685 2.696 V
= 10 kΩ to GND 2.67 2.68 V
R
L
–40°C to +125°C2.67 2.675 V
Output Voltage Low V
OL
RL = 100 kΩ to V+ 1 10 mV –40°C to +125°C210mV
= 10 kΩ to V+ 10 20 mV
R
L
–40°C to +125°C1520mV
Short Circuit Limit I
SC
±10 ±15 mA
–40°C to +125°C ±10 mA
Output Current I
O
±10 mA
–40°C to +125°C ±5mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = +2.7 V to +5.5 V 120 130 dB
Supply Current/Amplifier I
SY
–40°C ≤ T VO = 0 V 750 900 µA
≤ +125°C 115 130 dB
A
–40°C ≤ TA ≤ +125°C 950 1,000 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.5 V/µs Overload Recovery Time 0.05 ms Gain Bandwidth Product GBP 1 MHz
NOISE PERFORMANCE
Voltage Noise en p-p 0 Hz to 10 Hz 1.6 µV p-p Voltage Noise Density e Current Noise Density i
NOTE
1
Gain testing is highly dependent upon test bandwidth.
Specifications subject to change without notice.
n
n
f = 1 kHz 75 nV/√Hz f = 10 Hz 2 fA/√Hz
REV. A
–3–
AD8551/AD8552/AD8554
WARNING!
ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . GND to V
Differential Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . ±5.0 V
ESD(Human Body Model) . . . . . . . . . . . . . . . . . . . . .2,000 V
Output Short-Circuit Duration to GND . . . . . . . . . Indefinite
Storage Temperature Range
RM, RU and R Packages . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
AD8551A/AD8552A/AD8554A . . . . . . . . –40°C to +125°C
Junction Temperature Range
RM, RU and R Packages . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . .+300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating condi­tions for extended periods may affect device reliability.
2
Differential input voltage is limited to ± 5.0 V or the supply voltage, whichever is less.
1
+ 0.3 V
S

ORDERING GUIDE

Package Type
1
JA
JC
Units
8-Lead MSOP (RM) 190 44 °C/W 8-Lead TSSOP (RU) 240 43 °C/W 8-Lead SOIC (RN) 158 43 °C/W 14-Lead TSSOP (RU) 180 36 °C/W 14-Lead SOIC (RN) 120 36 °C/W
NOTE
1
θJA is specified for worst case conditions, i.e., θ
for P-DIP packages, θ SOIC and TSSOP packages.
is specified for device soldered in circuit board for
JA
is specified for device in socket
JA
Temperature Package Package
Model Range Description Option Brand
AD8551ARM2–40°C to +125°C 8-Lead MSOP RM-8 AHA AD8551AR –40°C to +125°C 8-Lead SOIC RN-8
AD8552ARU
3
–40°C to +125°C 8-Lead TSSOP RU-8
AD8552AR –40°C to +125°C 8-Lead SOIC RN-8 AD8554ARU
3
–40°C to +125°C 14-Lead TSSOP RU-14
AD8554AR –40°C to +125°C 14-Lead SOIC RN-14
NOTES
1
Due to package size limitations, these characters represent the part number.
2
Available in reels only. 1,000 or 2,500 pieces per reel.
3
Available in reels only. 2,500 pieces per reel.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8551/AD8552/AD8554 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
1
–4–
REV. A
Typical Performance Characteristics–
AD8551/AD8552/AD8554
180
160
140
120
100
80
60
NUMBER OF AMPLIFIERS
40
20
0
2.5
1.5 0.5
OFFSET VOLTAGE – V
0.5
VSY = +2.7V V
= +1.35V
CM
T
= +25C
A
1.5
2.5
Figure 1. Input Offset Voltage Distribution at +2.7 V
180
160
140
120
100
80
60
NUMBER OF AMPLIFIERS
40
20
0
2.5
1.5 0.5
OFFSET VOLTAGE – V
VSY = +5V
= +2.5V
V
CM
= +25C
T
A
0.5 2.5
1.5
Figure 4. Input Offset Voltage Distribution at +5 V
50
VSY = +5V
40
= 40C, +25C, +85C
T
A
30
20
10
0
10
INPUT BIAS CURRENT – pA
20
30
01
INPUT COMMON-MODE VOLTAGE – V
234
+85C
+25C
40C
Figure 2. Input Bias Current vs. Common-Mode Voltage
12
VSY = +5V V
10
8
6
4
NUMBER OF AMPLIFIERS
2
0
01 6
INPUT OFFSET DRIFT – nV/C
= +2.5V
CM
= 40C TO +125C
T
A
23 4 5
Figure 5. Input Offset Voltage Drift Distribution at +5 V
1,500
VSY = +5V T
1,000
500
1,000
INPUT BIAS CURRENT – pA
1,500
5
2,000
= +125C
A
500
0
01
INPUT COMMON-MODE VOLTAGE – V
234
Figure 3. Input Bias Current vs. Common-Mode Voltage
10k
VSY = +5V
= +25C
T
A
1k
100
10
OUTPUT VOLTAGE – mV
1
0.1
0.0001 0.01
0.001
SOURCE
0.1
LOAD CURRENT – mA
Figure 6. Output Voltage to Supply Rail vs. Output Current at +5 V
SINK
110
5
100
10k
VSY = +2.7V
= +25C
T
A
1k
100
10
OUTPUT VOLTAGE – mV
1
0.1
0.0001 0.01
0.001
SOURCE
LOAD CURRENT – mA
0.1
SINK
110
100
Figure 7. Output Voltage to Supply Rail vs. Output Current at +2.7 V
REV. A
0
VCM = +2.5V V
= +5V
SY
250
500
750
INPUT BIAS CURRENT – pA
1000
75 50
25
0255075100
TEMPERATURE – C
125
150
Figure 8. Bias Current vs. Temperature
–5–
1.0
+5V
0.8
+2.7V
0.6
0.4
SUPPLY CURRENT – mA
0.2
0
75 50
0
25
25 50 75 100
TEMPERATURE – C
125
Figure 9. Supply Current vs. Temperature
150
AD8551/AD8552/AD8554
g
800
TA = +25C
700
600
500
400
300
200
100
SUPPLY CURRENT PER AMPLIFIER – A
0
0
16
2345
SUPPLY VOLTAGE – V
Figure 10. Supply Current vs. Supply Voltage
60
50
40
AV = 100
30
20
AV = 10
10
0
AV = +1
10
CLOSED-LOOP GAIN – dB
20
30
40
100 1k 10M10k 100k 1M
FREQUENCY – Hz
VSY = +2.7V C
= 0pF
L
= 2k
R
L
Figure 13. Closed Loop Gain vs. Frequency at +2.7 V
60
VSY = +2.7V
50
C
= 0pF
L
R
=
L
40
30
20
10
0
10
OPEN-LOOP GAIN – dB
20
30
40
10k 100k 100M1M 10M
FREQUENCY – Hz
Figure 11. Open-Loop Gain and Phase Shift vs. Frequency at +2.7 V
60
50
40
AV = 100
30
20
AV = 10
10
0
AV = +1
10
CLOSED-LOOP GAIN – dB
20
30
40
100 1k 10M10k 100k 1M
FREQUENCY – Hz
VSY = +5V C
= 0pF
L
= 2k
R
L
Figure 14. Closed Loop Gain vs. Frequency at +5 V
60
VSY = +5V
0
rees
45
90
135
180
225
PHASE SHIFT – De
270
50
40
30
20
10
10
OPEN-LOOP GAIN – dB
20
30
40
= 0pF
C
L
=
R
L
0
10k 100k 100M1M 10M
FREQUENCY – Hz
Figure 12. Open-Loop Gain and Phase Shift vs. Frequency at +5 V
300
VSY = +2.7V
270
240
210
180
150
120
90
OUTPUT IMPEDANCE –
60
30
0
100 1k 10M10k 100k 1M
AV = 100
FREQUENCY – Hz
Figure 15. Output Impedance vs. Frequency at +2.7 V
AV = 1
AV = 10
0
45
90
135
180
225
PHASE SHIFT – Degrees
270
300
VSY = +5V
270
240
210
180
150
120
90
OUTPUT IMPEDANCE –
60
30
0
100 1k 10M10k 100k 1M
AV = 100
AV = 10
AV = 1
FREQUENCY – Hz
Figure 16. Output Impedance vs. Frequency at +5 V
VSY = +2.7V
= 300pF
C
L
= 2k
R
L
A
= +1
V
2s
500mV
Figure 17. Large Signal Transient Response at +2.7 V
–6–
VSY = +5V C
= 300pF
L
= 2k
R
L
A
= +1
V
5s
1V
Figure 18. Large Signal Transient Response at +5 V
REV. A
Loading...
+ 14 hidden pages
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use