Analog Devices AD8544ARU, AD8544AR, AD8542ARU, AD8542ARM, AD8542AR Datasheet

...

REV. B

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AD8541/AD8542/AD8544

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000

General-Purpose CMOS

Rail-to-Rail Amplifiers

PIN CONFIGURATIONS

FEATURES Single Supply Operation: 2.7 V to 5.5 V Low Supply Current: 45 ␮A/Amplifier Wide Bandwidth: 1 MHz No Phase Reversal Low Input Currents: 4 pA Unity Gain Stable Rail-to-Rail Input and Output

APPLICATIONS ASIC Input or Output Amplifier Sensor Interface Piezo Electric Transducer Amplifier Medical Instrumentation Mobile Communication Audio Output Portable Systems

GENERAL DESCRIPTION

The AD8541/AD8542/AD8544 are single, dual and quad railto-rail input and output single supply amplifiers featuring very low supply current and 1 MHz bandwidth. All are guaranteed to operate from a 2.7 V single supply as well as a 5 V supply. These parts provide 1 MHz bandwidth at low current consumption of 45 µA per amplifier.

Very low input bias currents enable the AD8541/AD8542/AD8544 to be used for integrators, photodiode amplifiers, piezo electric sensors and other applications with high source impedance. Supply current is only 45 µA per amplifier, ideal for battery operation.

Rail-to-rail inputs and outputs are useful to designers buffering ASICs in single supply systems. The AD8541/AD8542/AD8544 are optimized to maintain high gains at lower supply voltages, making them useful for active filters and gain stages.

The AD8541/AD8542/AD8544 are specified over the extended industrial (–40°C to +125°C) temperature range. The AD8541 is available in 8-lead SOIC, 5-lead SC70, and 5-lead SOT-23 packages. The AD8542 is available in 8-lead SOIC, 8-lead MSOP, and 8-lead TSSOP surface-mount packages. The AD8544 is available in 14-lead narrow SOIC, and 14-lead TSSOP surface mount packages. All TSSOP, MSOP, SC70, and SOT versions are available in tape and reel only.

5-Lead SC70 and SOT-23

(KS and RT Suffixes)

AD8542

OUT A

–IN A

+IN A

V–

+IN B

–IN B

OUT B

V+

AD8544

OUT A

–IN A

+IN A

V+

V–

+IN D

–IN D

OUT D

+IN B

–IN B

OUT B

OUT C

–IN C

+IN C

–IN A

+IN A

V–

V+

OUT A

AD8541

NC = NO CONNECT

ⴚIN A

+IN A

V+

OUT A

AD8541

Vⴚ

8-Lead SOIC

(R Suffix)

8-Lead SOIC, MSOP, and TSSOP

(R, RM, and RU Suffixes)

14-Lead SOIC and TSSOP

(R and RU Suffixes)

–2–

REV. B

AD8541/AD8542/AD8544–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

16 mV

–40°C ≤ T

≤ +125°C7mV

Input Bias Current I

460 pA

–40°C ≤ T

≤ +85°C 100 pA

–40°C ≤ T

≤ +125°C 1,000 pA

Input Offset Current I

0.1 30 pA

–40°C ≤ T

≤ +85°C50pA

–40°C ≤ T

≤ +125°C 500 pA

Input Voltage Range 0 2.7 V Common-Mode Rejection Ratio CMRR V

= 0 V to 2.7 V 40 45 dB

–40°C ≤ T

≤ +125°C38 dB

Large Signal Voltage Gain A

RL = 100 kΩ , VO = 0.5 V to 2.2 V 100 500 V/mV –40°C ≤ T

≤ +85°C 50 V/mV

–40°C ≤ T

≤ +125°C 2 V/mV

Offset Voltage Drift ∆V

/∆T –40°C ≤ TA ≤ +125°C4µV/°C

Bias Current Drift ∆I

/∆T –40°C ≤ TA ≤ +85°C 100 fA/°C

–40°C ≤ T

≤ +125°C 2,000 fA/°C

Offset Current Drift ∆IOS/∆T –40°C ≤ TA ≤ +125°C 25 fA/°C

OUTPUT CHARACTERISTICS

Output Voltage High V

IL = 1 mA 2.575 2.65 V –40°C ≤ T

≤ +125°C 2.550 V

Output Voltage Low V

IL = 1 mA 35 100 mV –40°C ≤ T

≤ +125°C 125 mV

Output Current I

OUT

= VS – 1 V 15 mA

±I

±20 mA

Closed Loop Output Impedance Z

OUT

f = 200 kHz, AV = 1 50 Ω

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 2.5 V to 6 V 65 76 dB

–40°C ≤ T

≤ +125°C60 dB

Supply Current/Amplifier I

VO = 0 V 38 55 µA –40°C ≤ TA ≤ +125°C75µA

DYNAMIC PERFORMANCE

Slew Rate SR RL = 100 kΩ 0.4 0.75 V/µs Settling Time t

To 0.1% (1 V Step) 5 µs

Gain Bandwidth Product GBP 980 kHz Phase Margin Φo 63 Degrees

NOISE PERFORMANCE

Voltage Noise Density e

f = 1 kHz 40 nV/√Hz

f = 10 kHz 38 nV/√Hz

Current Noise Density i

<0.1 pA/√Hz

Specifications subject to change without notice.

(VS = 2.7 V, VCM = 1.35 V, TA = 25ⴗC unless otherwise noted)

–3–REV. B

AD8541/AD8542/AD8544

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

16 mV

–40°C ≤ T

≤ +125°C7mV

Input Bias Current I

460 pA

–40°C ≤ T

≤ +85°C 100 pA

–40°C ≤ T

≤ +125°C 1,000 pA

Input Offset Current I

0.1 30 pA

–40°C ≤ T

≤ +85°C50pA

–40°C ≤ T

≤ +125°C 500 pA

Input Voltage Range 03V Common-Mode Rejection Ratio CMRR V

= 0 V to 3 V 40 45 dB

–40°C ≤ T

≤ +125°C38 dB

Large Signal Voltage Gain A

RL = 100 kΩ , VO = 0.5 V to 2.2 V 100 500 V/mV –40°C ≤ T

≤ +85°C 50 V/mV

–40°C ≤ T

≤ +125°C 2 V/mV

Offset Voltage Drift ∆V

/∆T –40°C ≤ TA ≤ +125°C4µV/°C

Bias Current Drift ∆I

/∆T –40°C ≤ TA ≤ +85°C 100 fA/°C

–40°C ≤ T

≤ +125°C 2,000 fA/°C

Offset Current Drift ∆IOS/∆T –40°C ≤ TA ≤ +125°C 25 fA/°C

OUTPUT CHARACTERISTICS

Output Voltage High V

IL = 1 mA 2.875 2.955 V –40°C ≤ T

≤ +125°C 2.850 V

Output Voltage Low V

IL = 1 mA 32 100 mV –40°C ≤ T

≤ +125°C 125 mV

Output Current I

OUT

= VS – 1 V 18 mA

±I

±25 mA

Closed Loop Output Impedance Z

OUT

f = 200 kHz, AV = 1 50 Ω

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 2.5 V to 6 V 65 76 dB

–40°C ≤ T

≤ +125°C60 dB

Supply Current/Amplifier I

VO = 0 V 40 60 µA –40°C ≤ TA ≤ +125°C75µA

DYNAMIC PERFORMANCE

Slew Rate SR RL = 100 kΩ 0.4 0.8 V/µs Settling Time t

To 0.01% (1 V Step) 5 µs

Gain Bandwidth Product GBP 980 kHz Phase Margin Φo 64 Degrees

NOISE PERFORMANCE

Voltage Noise Density e

f = 1 kHz 42 nV/√Hz

f = 10 kHz 38 nV/√Hz

Current Noise Density i

<0.1 pA/√Hz

Specifications subject to change without notice.

(VS = 3.0 V, VCM = 1.5 V, TA = 25ⴗC unless otherwise noted)

–4–

REV. B

AD8541/AD8542/AD8544–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

16 mV

–40°C ≤ T

≤ +125°C7mV

Input Bias Current I

460 pA

–40°C ≤ T

≤ +85°C 100 pA

–40°C ≤ T

≤ +125°C 1,000 pA

Input Offset Current I

0.1 30 pA

–40°C ≤ T

≤ +85°C50pA

–40°C ≤ T

≤ +125°C 500 pA

Input Voltage Range 0 5V Common-Mode Rejection Ratio CMRR V

= 0 V to 5 V 40 48 dB

–40°C ≤ T

≤ +125°C38 dB

Large Signal Voltage Gain A

RL = 100 kΩ , VO = 0.5 V to 2.2 V 20 40 V/mV –40°C ≤ T

≤ +85°C 10 V/mV

–40°C ≤ T

≤ +125°C 2 V/mV

Offset Voltage Drift ∆V

/∆T –40°C ≤ TA ≤ +125°C4µV/°C

Bias Current Drift ∆I

/∆T –40°C ≤ TA ≤ +85°C 100 fA/°C

–40°C ≤ T

≤ +125°C 2,000 fA/°C

Offset Current Drift ∆IOS/∆T –40°C ≤ TA ≤ +125°C 25 fA/°C

OUTPUT CHARACTERISTICS

Output Voltage High V

IL = 1 mA 4.9 4.965 V –40°C ≤ T

≤ +125°C 4.875 V

Output Voltage Low V

IL = 1 mA 25 100 mV –40°C ≤ T

≤ +125°C 125 mV

Output Current I

OUT

= VS – 1 V 30 mA

±I

±60 mA

Closed Loop Output Impedance Z

OUT

f = 200 kHz, AV = 1 45 Ω

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 2.5 V to 6 V 65 76 dB

–40°C ≤ T

≤ +125°C60 dB

Supply Current/Amplifier I

VO = 0 V 45 65 µA –40°C ≤ TA ≤ +125°C85µA

DYNAMIC PERFORMANCE

Slew Rate SR RL = 100 kΩ, CL = 200 pF 0.45 0.92 V/µs Full-Power Bandwidth BW

1% Distortion 70 kHz

Settling Time t

To 0.1% (1 V Step) 6 µs

Gain Bandwidth Product GBP 1,000 kHz Phase Margin Φo 67 Degrees

NOISE PERFORMANCE

Voltage Noise Density e

f = 1 kHz 42 nV/√Hz

f = 10 kHz 38 nV/√Hz

Current Noise Density i

<0.1 pA/√Hz

Specifications subject to change without notice.

(VS = 5.0 V, VCM = 2.5 V, TA = 25ⴗC unless otherwise noted)

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