Analog Devices AD8544, AD8542, AD8541 Datasheet

General Purpose CMOS
a
FEATURES Single Supply Operation: +2.7 V to +5.5 V Low Supply Current: 45 ␮A/Amplifier Wide Bandwidth: 1 MHz No Phase Reversal Low Input Currents: 4 pA Unity Gain Stable Rail-to-Rail Input and Output
APPLICATIONS ASIC Input or Output Amplifier Sensor Interface Piezo Electric Transducer Amplifier Medical Instrumentation Mobile Communication Audio Output Portable Systems
GENERAL DESCRIPTION
The AD8541/AD8542/AD8544 are single, dual and quad rail­to-rail input and output single supply amplifiers featuring very low supply current and 1 MHz bandwidth. All are guaranteed to operate from a +2.7 V single supply as well as a +5 V supply. These parts provide 1 MHz bandwidth at low current consump­tion of 45 µA per amplifier.
Very low input bias currents enable the AD8541/AD8542/AD8544 to be used for integrators, photodiode amplifiers, piezo electric sensors and other applications with high source impedance. Supply current is only 45 µA per amplifier, ideal for battery operation.
Rail-to-rail inputs and outputs are useful to designers buffering ASICs in single supply systems. The AD8541/AD8542/AD8544 are optimized to maintain high gains at lower supply voltages, making them useful for active filters and gain stages.
The AD8541/AD8542/AD8544 are specified over the extended industrial (–40°C to +125°C) temperature range. The AD8541 is available in 8-lead SO and 5-lead SOT-23 packages. The AD8542 is available in 8-lead SO, 8-lead MSOP, and 8-lead TSSOP surface mount packages. The AD8544 is available in 14-lead narrow SO-14 and 14-lead TSSOP surface mount pack­ages. All TSSOP, MSOP, and SOT versions are available in tape and reel only.
Rail-to-Rail Amplifiers
AD8541/AD8542/AD8544
PIN CONFIGURATIONS
SO-8 (R) SOT-23-5 (RT)
V
V+
1
2
3
1
2
3
4
5
6
7
AD8541
AD8544
5
4
14
13
12
11
10
V+
IN A
9
8
OUT D
IN D
+IN D
V
+IN C
IN C
OUT C
NC
1
IN A
2
+IN A
3
V
4
NC = NO CONNECT
AD8541
8
7
6
5
NC
V+
OUT A
NC
OUT A
+IN A
SO-8 (R), RM-8, and RU-8 SO-14 (R) and RU-14
OUT A
IN A
+IN A
V
1
2
3
4
AD8542
8
7
6
5
V+
OUT B
IN B
+IN B
OUT A
IN A
+IN A
+IN B
IN B
OUT B
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000
AD8541/AD8542/AD8544–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(VS = +2.7 V, VCM = +1.35 V, TA = +25C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
B
OS
OS
–40°C T
–40°C T –40°C T
–40°C T –40°C T
+125°C7mV
A
+85°C 100 pA
A
+125°C 1,000 pA
A
+85°C50pA
A
+125°C 500 pA
A
16 mV
460 pA
0.1 30 pA
Input Voltage Range 0 +2.7 V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A
Offset Voltage Drift ∆V Bias Current Drift ∆I
VO
/T –40°C TA ≤ +125°C4µV/°C
OS
/T –40°C TA ≤ +85°C 100 fA/°C
B
= 0 V to +2.7 V 40 45 dB
CM
–40°C T
+125°C38 dB
A
RL = 100 k , VO = +0.5 V to +2.2 V 100 500 V/mV –40°C T –40°C T
–40°C T
+85°C 50 V/mV
A
+125°C 2 V/mV
A
+125°C 2,000 fA/°C
A
Offset Current Drift ∆IOS/T –40°C TA ≤ +125°C 25 fA/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Output Current I
Closed Loop Output Impedance Z
OUT
±I
OH
OL
SC
OUT
IL = 1 mA +2.575 +2.65 V –40°C T
+125°C +2.550 V
A
IL = 1 mA 35 100 mV –40°C T V
OUT
+125°C 125 mV
A
= VS – 1 V 15 mA
±20 mA
f = 200 kHz, AV = 1 50
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = +2.5 V to +6 V 65 76 dB
Supply Current/Amplifier I
SY
–40°C T VO = 0 V 38 55 µA
+125°C60 dB
A
–40°C TA +125°C75µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 k 0.4 0.75 V/µs Settling Time t
S
To 0.1% (1 V Step) 5 µs
Gain Bandwidth Product GBP 980 kHz Phase Margin Φo 63 Degrees
NOISE PERFORMANCE
Voltage Noise Density e
Current Noise Density i
Specifications subject to change without notice.
n
e
n
n
f = 1 kHz 40 nV/Hz f = 10 kHz 38 nV/Hz
<0.1 pA/Hz
–2–
REV. A
AD8541/AD8542/AD8544
ELECTRICAL CHARACTERISTICS
(VS = +3.0 V, VCM = +1.5 V, TA = +25C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
B
OS
OS
–40°C T
–40°C T –40°C T
–40°C T –40°C T
+125°C7mV
A
+85°C 100 pA
A
+125°C 1,000 pA
A
+85°C50pA
A
+125°C 500 pA
A
16 mV
460 pA
0.1 30 pA
Input Voltage Range 0+3V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A
Offset Voltage Drift ∆V Bias Current Drift ∆I
VO
/T –40°C TA ≤ +125°C4µV/°C
OS
/T –40°C TA ≤ +85°C 100 fA/°C
B
= 0 V to +3 V 40 45 dB
CM
–40°C T
+125°C38 dB
A
RL = 100 k , VO = +0.5 V to +2.2 V 100 500 V/mV –40°C T –40°C T
–40°C T
+85°C 50 V/mV
A
+125°C 2 V/mV
A
+125°C 2,000 fA/°C
A
Offset Current Drift ∆IOS/T –40°C TA ≤ +125°C 25 fA/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Output Current I
Closed Loop Output Impedance Z
OUT
±I
OH
OL
SC
OUT
IL = 1 mA +2.875 +2.955 V –40°C T
+125°C +2.850 V
A
IL = 1 mA 32 100 mV –40°C T V
OUT
+125°C 125 mV
A
= VS – 1 V 18 mA
±25 mA
f = 200 kHz, AV = 1 50
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = +2.5 V to +6 V 65 76 dB
+125°C60 dB
A
Supply Current/Amplifier I
SY
–40°C T VO = 0 V 40 60 µA –40°C TA ≤ +125°C75µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 k 0.4 0.8 V/µs Settling Time t
S
To 0.01% (1 V Step) 5 µs
Gain Bandwidth Product GBP 980 kHz Phase Margin Φo 64 Degrees
NOISE PERFORMANCE
Voltage Noise Density e
Current Noise Density i
Specifications subject to change without notice.
n
e
n
n
f = 1 kHz 42 nV/Hz f = 10 kHz 38 nV/Hz
<0.1 pA/Hz
–3–REV. A
AD8541/AD8542/AD8544–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(VS = +5.0 V, VCM = +2.5 V, TA = +25C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
B
OS
OS
–40°C T
–40°C T –40°C T
–40°C T –40°C T
+125°C7mV
A
+85°C 100 pA
A
+125°C 1,000 pA
A
+85°C50pA
A
+125°C 500 pA
A
16 mV
460 pA
0.1 30 pA
Input Voltage Range 0+5V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A
Offset Voltage Drift ∆V Bias Current Drift ∆I
VO
/T –40°C TA ≤ +125°C4µV/°C
OS
/T –40°C TA ≤ +85°C 100 fA/°C
B
= 0 V to +5 V 40 48 dB
CM
–40°C T
+125°C38 dB
A
RL = 100 k , VO = +0.5 V to +2.2 V 20 40 V/mV –40°C T –40°C T
–40°C T
+85°C 10 V/mV
A
+125°C 2 V/mV
A
+125°C 2,000 fA/°C
A
Offset Current Drift ∆IOS/T –40°C TA ≤ +125°C 25 fA/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Output Current I
Closed Loop Output Impedance Z
OUT
±I
OH
OL
SC
OUT
IL = 1 mA +4.9 +4.965 V –40°C T
+125°C +4.875 V
A
IL = 1 mA 25 100 mV –40°C T V
OUT
+125°C 125 mV
A
= VS – 1 V 30 mA
±60 mA
f = 200 kHz, AV = 1 45
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = +2.5 V to +6 V 65 76 dB
Supply Current/Amplifier I
SY
–40°C T VO = 0 V 45 65 µA
+125°C60 dB
A
–40°C TA ≤ +125°C85µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 100 k, CL = 200 pF 0.45 0.92 V/µs Full-Power Bandwidth BW Settling Time t
S
P
1% Distortion 70 kHz To 0.1% (1 V Step) 6 µs
Gain Bandwidth Product GBP 1,000 kHz Phase Margin Φo 67 Degrees
NOISE PERFORMANCE
Voltage Noise Density e
Current Noise Density i
Specifications subject to change without notice.
n
e
n
n
f = 1 kHz 42 nV/Hz f = 10 kHz 38 nV/Hz
<0.1 pA/Hz
–4–
REV. A
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