ANALOG DEVICES AD 8532 ARZ Datasheet

Page 1
Low Cost, 250 mA Output,
O
O

FEATURES

Single-supply operation: 2.7 V to 6 V High output current: ±250 mA Low supply current: 750 μA/amplifier Wide bandwidth: 3 MHz Slew rate: 5 V/μs No phase reversal Low input currents Unity gain stable Rail-to-rail input and output

APPLICATIONS

Multimedia audio LCD drivers ASIC input or output amplifiers Headphone drivers

GENERAL DESCRIPTION

The AD8531, AD8532, and AD8534 are single, dual, and quad rail-to-rail input/output single-supply amplifiers featuring 250 mA output drive current. This high output current makes these amplifiers excellent for driving either resistive or capacitive loads. AC performance is very good with 3 MHz bandwidth, 5 V/μs slew rate, and low distortion. All are guaranteed to operate from a 3 V single supply as well as a 5 V supply.
The very low input bias currents enable the AD853x to be used for integrators, diode amplification, and other applications requiring low input bias current. Supply current is only 750 μA per amplifier at 5 V, allowing low current applications to control high current loads.
Applications include audio amplification for computers, sound ports, sound cards, and set-top boxes. The AD853x family is very stable, and it is capable of driving heavy capacitive loads such as those found in LCDs.
The ability to swing rail-to-rail at the inputs and outputs enables designers to buffer CMOS DACs, ASICs, or other wide output swing devices in single-supply systems.
The AD8531/AD8532/AD8534 are specified over the extended industrial temperature range (−40°C to +85°C). The AD8531 is available in 8-lead SOIC, 5-lead SC70, and 5-lead SOT-23 packages. The AD8532 is available in 8-lead SOIC, 8-lead MSOP, and 8-lead TSSOP surface-mount packages. The AD8534 is available in narrow 14-lead SOIC and 14-lead TSSOP surface-mount packages.
Rev. F
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
Single-Supply Amplifiers
AD8531/AD8532/AD8534

PIN CONFIGURATIONS

AD8531
1
OUT A
V–
2
3
+IN A
Figure 1. 5-Lead SC70 and 5-Lead SOT-23
(KS and RJ Suffixes)
NC 1
–IN A 2
+IN A
AD8531
3
V– 4
NC = NO CONNECT
Figure 2. 8-Lead SOIC
(R Suffix)
1
OUT A
2
–IN A
3
+IN A
4
V–
AD8532
Figure 3. 8-Lead SOIC, 8-Lead TSSOP, and 8-Lead MSOP
(R, RU, and RM Suffixes)
1
UT A
2
–IN A
3
+IN A
4
V+
+IN B
–IN B
UT B
AD8534
5
6
7
Figure 4. 14-Lead SOIC and 14-Lead TSSOP
(R and RU Suffixes)
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©1996–2008 Analog Devices, Inc. All rights reserved.
6
5
4
NC8
V+7
OUT A
NC5
8
7
6
5
14
13
12
11
10
9
8
V+
–IN A
V+
OUT B
–IN B
+IN B
OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
01099-001
01099-002
01099-003
01099-004
Page 2
AD8531/AD8532/AD8534

TABLE OF CONTENTS

Features .............................................................................................. 1
Applications....................................................................................... 1
General Description......................................................................... 1
Pin Configurations ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Electrical Characteristics............................................................. 3
Absolute Maximum Ratings............................................................ 5
Thermal Resistance ...................................................................... 5
ESD Caution.................................................................................. 5
Typical Performance Characteristics ............................................. 6
Theory of Operation ...................................................................... 11
Short-Circuit Protection............................................................ 11
Power Dissipation....................................................................... 11
Power Calculations for Varying or Unknown Loads............. 12
Calculating Power by Measuring Ambient and Case
Te mp e r at u re ................................................................................ 12
Calculating Power by Measuring Supply Current ................. 12
Input Overvoltage Protection................................................... 12
Output Phase Reversal............................................................... 13
Capacitive Load Drive ............................................................... 13
Applications Information.............................................................. 14
High Output Current, Buffered Reference/Regulator........... 14
Single-Supply, Balanced Line Driver ....................................... 14
Single-Supply Headphone Amplifier....................................... 15
Single-Supply, 2-Way Loudspeaker Crossover Network....... 15
Direct Access Arrangement for Telephone Line Interface ... 16
Outline Dimensions ....................................................................... 17
Ordering Guide .......................................................................... 20

REVISION HISTORY

1/08—Rev. E to Rev. F
Changes to Layout............................................................................ 5
Changes to Figure 12 and Figure 13............................................... 7
Changes to Figure 38...................................................................... 11
Changes to Input Overvoltage Protection Section..................... 12
Changes to Figure 43...................................................................... 14
Updated Outline Dimensions....................................................... 17
Changes to Ordering Guide.......................................................... 20
4/05—Rev. D to Rev. E
Updated Format..................................................................Universal
Changes to Pin Configurations....................................................... 1
Changes to Table 4............................................................................ 5
Updated Outline Dimensions....................................................... 18
Changes to Ordering Guide.......................................................... 19
10/02—Rev. C to Rev. D
Deleted 8-Lead PDIP (N-8) .............................................. Universal
Deleted 14-Lead PDIP (N-14) ..........................................Universal
Edits to Figure 34...............................................................................9
Updated Outline Dimensions........................................................15
8/96—Revision 0: Initial Version
Rev. F | Page 2 of 20
Page 3
AD8531/AD8532/AD8534

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

VS = 3.0 V, VCM = 1.5 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
−40°C TA ≤ +85°C 30 mV Input Bias Current I
B
−40°C TA ≤ +85°C 60 pA Input Offset Current I
OS
−40°C TA ≤ +85°C 30 pA Input Voltage Range 0 3 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 3 V 38 45 dB Large Signal Voltage Gain A
VO
Offset Voltage Drift ΔVOS/ΔT 20 μV/°C Bias Current Drift ΔIB/ΔT 50 fA/°C Offset Current Drift ΔIOS/ΔT 20 fA/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C TA ≤ +85°C 2.8 V Output Voltage Low V
OL
−40°C TA ≤ +85°C 125 mV Output Current I Closed-Loop Output Impedance Z
OUT
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 3 V to 6 V 45 55 dB Supply Current/Amplifier I
SY
−40°C TA ≤ +85°C 1.25 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 3.5 V/μs Settling Time t
S
Gain Bandwidth Product GBP 2.2 MHz Phase Margin фo 70 Degrees Channel Separation CS f = 1 kHz, RL = 2 kΩ 65 dB
NOISE PERFORMANCE
Voltage Noise Density e
n
f = 10 kHz 30 nV/√Hz Current Noise Density i
n
25 mV
5 50 pA
1 25 pA
RL = 2 kΩ, VO = 0.5 V to 2.5 V 25 V/mV
IL = 10 mA 2.85 2.92 V
IL = 10 mA 60 100 mV
±250 mA f = 1 MHz, AV = 1 60 Ω
VO = 0 V 0.70 1 mA
To 0.01% 1.6 μs
f = 1 kHz 45 nV/√Hz
f = 1 kHz 0.05 pA/√Hz
Rev. F | Page 3 of 20
Page 4
AD8531/AD8532/AD8534
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
−40°C TA ≤ +85°C 30 mV
Input Bias Current I
B
−40°C TA ≤ +85°C 60 pA
Input Offset Current I
OS
−40°C TA ≤ +85°C 30 pA
Input Voltage Range 0 5 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 38 47 dB
Large Signal Voltage Gain A
VO
Offset Voltage Drift ΔVOS/ΔT −40°C TA ≤ +85°C 20 μV/°C
Bias Current Drift ΔIB/ΔT 50 fA/°C
Offset Current Drift ΔIOS/ΔT 20 fA/°C OUTPUT CHARACTERISTICS
Output Voltage High V
OH
−40°C TA ≤ +85°C 4.85 V
Output Voltage Low V
OL
−40°C TA ≤ +85°C 125 mV
Output Current I
Closed-Loop Output Impedance Z
OUT
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 3 V to 6 V 45 55 dB
Supply Current/Amplifier I
SY
−40°C TA ≤ +85°C 1.75 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 5 V/μs
Full-Power Bandwidth BW
Settling Time t
p
S
Gain Bandwidth Product GBP 3 MHz
Phase Margin фo 70 Degrees
Channel Separation CS f = 1 kHz, RL = 2 kΩ 65 dB NOISE PERFORMANCE
Voltage Noise Density e
n
f = 10 kHz 30 nV/√Hz
Current Noise Density i
n
25 mV
5 50 pA
1 25 pA
RL = 2 kΩ, VO = 0.5 V to 4.5 V 15 80 V/mV
IL = 10 mA 4.9 4.94 V
IL = 10 mA 50 100 mV
±250 mA f = 1 MHz, AV = 1 40 Ω
VO = 0 V 0.75 1.25 mA
1% distortion 350 kHz To 0.01% 1.4 μs
f = 1 kHz 45 nV/√Hz
f = 1 kHz 0.05 pA/√Hz
Rev. F | Page 4 of 20
Page 5
AD8531/AD8532/AD8534

ABSOLUTE MAXIMUM RATINGS

Table 3.
Parameter Rating
Supply Voltage (VS) 7 V Input Voltage GND to V Differential Input Voltage
1
±6 V
S
Storage Temperature Range −65°C to +150°C Operating Temperature Range −40°C to +85°C Junction Temperature Range −65°C to +150°C Lead Temperature (Soldering, 60 sec) 300°C
1
For supplies less than 6 V, the differential input voltage is equal to ±VS.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; the functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages.
2.5 –V
OL
2.0
1.5
OUT
±V
1.0
0.5
0
0 20 40 60 80 100 120 140 160 180 200
Figure 5. Output Voltage vs. Load, V

ESD CAUTION

+V
OH
R
LOAD
R
Is Connected to GND (0 V)
LOAD
(Ω)
= ±2.5 V,
S
01099-005
Table 4.
Package Type θ
JA
θ
JC
Unit
5-Lead SC70 (KS) 376 126 °C/W 5-Lead SOT-23 (RJ) 230 146 °C/W 8-Lead SOIC (R) 158 43 °C/W 8-Lead MSOP (RM) 210 45 °C/W 8-Lead TSSOP (RU) 240 43 °C/W 14-Lead SOIC (R) 120 36 °C/W 14-Lead TSSOP (RU) 240 43 °C/W
Rev. F | Page 5 of 20
Page 6
AD8531/AD8532/AD8534

TYPICAL PERFORMANCE CHARACTERISTICS

VS= 2.7V
= 1.35V
V
CM
= 25°C
T
500
400
300
200
QUANTITY ( Amplifi ers)
100
–12 –10 –8 –6 –4 –2 0 2 4
INPUT OFFSET VOLTAGE (mV)
A
INPUT BIAS CURRENT (pA)
01099-006
Figure 6. Input Offset Voltage Distribution
VS= 5V
= 2.5V
V
CM
= 25°C
T
500
400
300
200
QUANTITY ( Amplifi ers)
100
A
INPUT BIAS CURRENT (pA)
VS= 5V, 3V V
= VS/2
CM
8
7
6
5
4
3
2
–35 –15 5 25 45 65 85
TEMPERATURE (°C)
Figure 9. Input Bias Current vs. Temperature
VS= 5V
T
= 25°C
A
8
7
6
5
4
3
2
01099-009
–12 –10 –8 –6 –4 –2 0 2 4
INPUT OFFSET VOLTAGE (mV)
Figure 7. Input Offset Voltage Distribution
–2
–3
–4
–5
–6
–7
INPUT OFFSET VOLTAGE (mV)
–8
–35 –15 5 25 45 65 85
TEMPERATURE (°C)
Figure 8. Input Offset Voltage vs. Temperature
VS= 5V V
= 2.5V
CM
01099-007
01 2 34 5
COMMON-MODE VOLTAGE (V)
01099-010
Figure 10. Input Bias Current vs. Common-Mode Voltage
6
VS= 5V, 3V
= VS/2
V
CM
5
4
3
2
1
0
INPUT OFFSET CURRENT (pA)
–1
01099-008
–2
–35 –15 5 25 45 65 85
TEMPERATURE (°C)
01099-011
Figure 11. Input Offset Current vs. Temperature
Rev. F | Page 6 of 20
Page 7
AD8531/AD8532/AD8534
1000
VS= 2.7V
= 25°C
T
A
VS= 5V
= NO LOAD
R
L
= 25°C
T
A
100
10
1
ΔOUTPUT VOLTAGE (mV)
0.1
0.01
0.001 0.01 0.1 1 10 100 LOAD CURRENT (mA)
SOURCE
SINK
Figure 12. Output Voltage to Supply Rail vs. Load Current
1000
VS= 5V
= 25°C
T
A
100
10
1
ΔOUTPUT VOLTAGE (mV)
0.1
SOURCE
SINK
80
60
40
GAIN (dB)
20
0
01099-012
1k 10k 100k 1M 10M 100M
FREQUENCY ( Hz)
45
90
135
180
PHASE SHIFT (Degrees)
01099-015
Figure 15. Open-Loop Gain and Phase Shift vs. Frequency
5
VS= 2.7V
= 25°C
T
A
= 2k
R
L
= 2.5V p-p
V
4
IN
3
2
OUTPUT SWING (V p-p)
1
0.01
0.001 0.01 0.1 1 10 100 LOAD CURRENT (mA)
Figure 13. Output Voltage to Supply Rail vs. Load Current
VS= 2.7V
= NO LOAD
R
L
= 25°C
T
A
80
60
40
GAIN (dB)
20
0
1k 10k 100k 1M 10M 100M
FREQUENCY ( Hz)
Figure 14. Open-Loop Gain and Phase Shift vs. Frequency
45
90
135
180
01099-013
0
1k 10k 100k 1M 10M
FREQUENCY ( Hz)
01099-016
Figure 16. Closed-Loop Output Swing vs. Frequency
5
4
3
2
PHASE SHIFT (Degrees)
01099-014
OUTPUT SWING (V p-p)
1
0
1k 10k 100k 1M 10M
FREQUENCY ( Hz)
VS= 5V
= 25°C
T
A
= 2k
R
L
= 4.9V p-p
V
IN
01099-017
Figure 17. Closed-Loop Output Swing vs. Frequency
Rev. F | Page 7 of 20
Page 8
AD8531/AD8532/AD8534
(
200
VS= 5V
= 25°C
T
180
A
160
140
)
120
100
80
IMPEDANCE
60
40
20
0
1k 10k 100k 1M 10M 100M
AV= 10
AV= 1
LOAD CURRENT (mA)
Figure 18. Closed-Loop Output Impedance vs. Frequency
VS = 5V
= 1000
A
100
90
V
T
= 25°C
A
FREQUENCY = 1kHz
01099-018
1
VS= 5V
= 25°C
T
A
0.1
CURRENT NOISE DENSITY ( pA/√Hz)
0.01 10 100 1k 10k 100k
FREQUENCY ( Hz)
Figure 21. Current Noise Density vs. Frequency
110
VS= 5V T
= 25°C
A
100
90
80
01099-021
100µV/DIV
10
0%
MARKER 41µV/√Hz
Figure 19. Voltage Noise Density vs. Frequency (1 kHz)
VS = 5V
= 1000
A
100
90
200µV/DIV
10
0%
MARKER 25.9µV/√Hz
V
T
= 25°C
A
FREQUENCY = 10kHz
Figure 20. Voltage Noise Density vs. Frequency (10 kHz)
70
60
COMMON-MO DE REJECTI ON (dB)
50
01099-019
40
1k 10k 100k 1M 10M
FREQUENCY ( Hz)
01099-022
Figure 22. Common-Mode Rejection vs. Frequency
140
V
= 2.7V
S
T
= 25°C
120
A
100
80
60
40
20
0
–20
POWER SUPPLY REJECTION (dB)
–40
01099-020
–60
100 1k 10k 100k 1M 10M
PSSR–
PSSR+
FREQUENCY ( Hz)
01099-023
Figure 23. Power Supply Rejection vs. Frequency
Rev. F | Page 8 of 20
Page 9
AD8531/AD8532/AD8534
A
A
A
A
140
VS= 5V T
= 25°C
120
A
100
80
60
40
20
0
–20
POWER SUPPLY REJECTION (dB)
–40
–60
100 1k 10k 100k 1M 10M
PSSR–
PSSR+
FREQUENCY ( Hz)
Figure 24. Power Supply Rejection vs. Frequency
50
VS= 2.7V
= 25°C
T
A
= 2k
R
L
40
01099-024
50
VS= 5V
= 25°C
T
A
= 600
R
L
40
30
L OVERSHOOT (%)
20
10
SMALL SIGN
0
10 100 1000 10000
–OS
CAPACITANCE (pF)
+OS
Figure 27. Small Signal Overshoot vs. Load Capacitance
50
VS= 2.7V
= 25°C
T
A
= 600
R
L
40
01099-027
30
L OVERSHOOT (%)
20
10
SMALL SIGN
0
10 100 1000 10000
–OS
+OS
CAPACITANCE (pF)
Figure 25. Small Signal Overshoot vs. Load Capacitance
60
VS= 5V
= 25°C
T
A
= 2k
R
L
50
40
–OS
30
L OVERSHOOT (%)
20
SMALL SIGN
10
0
10 100 1000 10000
CAPACITANCE (pF)
+OS
Figure 26. Small Signal Overshoot vs. Load Capacitance
30
L OVERSHOOT (%)
20
–OS
10
SMALL SIGN
+OS
01099-025
0
10 100 1000 10000
CAPACITANCE (pF)
01099-028
Figure 28. Small Signal Overshoot vs. Load Capacitance
0.90
0.85
0.80
0.75
0.70
0.65
0.60
SUPPLY CURRENT/AMPLI FIER (mA)
0.55
01099-026
0.50 –20–40 0 20 40 60 80
TEMPERATURE (°C)
VS= 5V
VS= 3V
01099-029
Figure 29. Supply Current per Amplifier vs. Temperature
Rev. F | Page 9 of 20
Page 10
AD8531/AD8532/AD8534
V
V
0.8 TA= 25°C
0.7
0.6
0.5
0.4
0.3
0.2
SUPPLY CURRENT/AMPLIFI ER (mA)
0.1
0
0.75 1.501.00 2.00 2.50 3.00 SUPPLY VOLTAGE V)
Figure 30. Supply Current per Amplifier vs. Supply Voltage
VS= 1.35V V A R C T
0V
20mV/DI
= 50mV
IN
= 1
V
= 2k
L
= 300pF
L
= 25°C
A
100
90
10
0%
01099-030
Figure 33. Large Signal Transient Response
100
90
VS = ±2.5V
= 1
A
V
= 2k
R
L
= 25°C
T
A
500ns500mV
VS = ±1.35V
= 1
A
V
= 2k
R
L
= 25°C
T
A
01099-033
10
0%
500 ns/DIV
Figure 31. Small Signal Transient Response
0V
20mV/DI
VS= 2.5V V
IN
= 1
A
V
= 2k
R
L
= 300pF
C
L
= 25°C
T
A
500ns/DIV
Figure 32. Small Signal Transient Response
= 50mV
01099-031
500ns500mV
Figure 34. Large Signal Transient Response
1V
100
90
10
0%
1V
01099-032
10µs
Figure 35. No Phase Reversal
01099-034
01099-035
Rev. F | Page 10 of 20
Page 11
AD8531/AD8532/AD8534
V
V
V

THEORY OF OPERATION

The AD8531/AD8532/AD8534 are all CMOS, high output current drive, rail-to-rail input/output operational amplifiers. Their high output current drive and stability with heavy capacitive loads make the AD8531/AD8532/AD8534 excellent choices as drive amplifiers for LCD panels.
Figure 36 illustrates a simplified equivalent circuit for the AD8531/AD8532/AD8534. Like many rail-to-rail input amplifier configurations, it comprises two differential pairs, one N-channel (M1 to M2) and one P-channel (M3 to M4). These differential pairs are biased by 50 μA current sources, each with a compliance limit of approximately 0.5 V from either supply voltage rail. The differential input voltage is then converted into a pair of differential output currents. These differential output currents are then combined in a compound folded-cascade second gain stage (M5 to M9). The outputs of the second gain stage at M8 and M9 provide the gate voltage drive to the rail-to-rail output stage. Additional signal current recombination for the output stage is achieved using M11 to M14.
To achieve rail-to-rail output swings, the AD8531/AD8532/ AD8534 design employs a complementary, common source output stage (M15 to M16). However, the output voltage swing is directly dependent on the load current because the difference between the output voltage and the supply is determined by the AD8531/AD8532/AD8534’s output transistors on channel resistance (see
Figure 12 and Figure 13). The output stage also exhibits voltage gain by virtue of the use of common source amplifiers; as a result, the voltage gain of the output stage (thus, the open-loop gain of the device) exhibits a strong dependence on the total load resistance at the output of the AD8531/ AD8532/AD8534.
+
IN–
IN+
M1
50µA
M3
50µA
100µA 100µA
V
B2
M4
M2
V
B3
M5
M8
M6
M9
M7 M10
V–
M12
20µA
20µA
M11
M15
OUT
M16
M14
M13
Figure 36. Simplified Equivalent Circuit
01099-036

SHORT-CIRCUIT PROTECTION

As a result of the design of the output stage for the maximum load current capability, the AD8531/AD8532/AD8534 do not have any internal short-circuit protection circuitry. Direct connection of the output of the AD8531/AD8532/AD8534 to the positive supply in single-supply applications destroys the device. In applications where some protection is needed, but not at the expense of reduced output voltage headroom, a low value resistor in series with the output, as shown in
Figure 37, can be used. The resistor, connected within the feedback loop of the amplifier, has very little effect on the performance of the amplifier other than limiting the maximum available output voltage swing. For single 5 V supply applications, resistors less than 20 Ω are not recommended.
5
R
IN
AD8532
Figure 37. Output Short-Circuit Protection
20
X
V
OUT
01099-037

POWER DISSIPATION

Although the AD8531/AD8532/AD8534 are capable of providing load currents to 250 mA, the usable output load current drive capability is limited to the maximum power dissipation allowed by the device package used. In any application, the absolute maximum junction temperature for the AD8531/AD8532/AD8534 is 150°C. The maximum junction temperature should never be exceeded because the device could suffer premature failure. Accurately measuring power dissipation of an integrated circuit is not always a straightforward exercise; therefore, as a design aid for either setting a safe output current drive level or selecting a heat sink for the package options available on the AD8531/AD8532/AD8534.
1.5
SOIC
θ
= 158°C/W
JA
1.0
MSOP
θ
= 210°C/W
JA
SC70
0.5
θ
= 376°C/W
JA
POWER DISSIPATI ON (W)
TSSOP
θ
= 240°C/W
JA
0
0 25 50 75 85 100
TEMPERATURE (°C)
Figure 38. Maximum Power Dissipation vs. Ambient Temperature
Figure 38 is provided
SOT-23
θ
= 230°C/W
JA
TJMAX = 150°C
FREE AIR
NO HEAT SINK
01099-038
Rev. F | Page 11 of 20
Page 12
AD8531/AD8532/AD8534
The thermal resistance curves were determined using the AD8531/AD8532/AD8534 thermal resistance data for each package and a maximum junction temperature of 150°C. The following formula can be used to calculate the internal junction temperature of the AD8531/AD8532/AD8534 for any application:
= P
J
× θJA + T
DISS
A
T
where:
T
is the junction temperature.
J
P
is the power dissipation.
DISS
is the package thermal resistance, junction-to-case.
θ
JA
T
is the ambient temperature of the circuit.
A
To calculate the power dissipated by the AD8531/AD8532/ AD8534, the following equation can be used:
= I
P
DISS
× (VS − V
LOAD
OUT
)
where:
I
is the output load current.
LOAD
V
is the supply voltage.
S
is the output voltage.
V
OUT
The quantity within the parentheses is the maximum voltage developed across either output transistor. As an additional design aid in calculating available load current from the AD8531/AD8532/AD8534,
Figure 5 illustrates the output voltage of the AD8531/AD8532/AD8534 as a function of load resistance.

POWER CALCULATIONS FOR VARYING OR UNKNOWN LOADS

Often, calculating power dissipated by an integrated circuit to determine if the device is being operated in a safe range is not as simple as it may seem. In many cases, power cannot be directly measured, which may be the result of irregular output waveforms or varying loads; indirect methods of measuring power are required.
There are two methods to calculate power dissipated by an integrated circuit. The first can be done by measuring the package temperature and the board temperature, and the other is to directly measure the supply current of the circuit.

CALCULATING POWER BY MEASURING AMBIENT AND CASE TEMPERATURE

Given the two equations for calculating junction temperature
T
= TA + P
J
where:
T
is the junction temperature.
J
T
is the ambient temperature.
A
is the junction to ambient thermal resistance.
θ
JA
DISS θJA
TJ = TC + P
DISS θJA
where:
T
is the case temperature.
C
and θJC are given in the data sheet.
θ
JA
The two equations can be solved for P (power)
T
+ P
A
P
= (TA − TC)/(θJC − θJA)
DISS
DISS θJA
= TC +
JC
Once power is determined, it is necessary to go back and calculate the junction temperature to ensure that it has not been exceeded.
The temperature measurements should be directly on the package and on a spot on the board that is near the package but not touching it. Measuring the package could be difficult. A very small bimetallic junction glued to the package can be used, or measurement can be done using an infrared sensing device if the spot size is small enough.

CALCULATING POWER BY MEASURING SUPPLY CURRENT

Power can be calculated directly, knowing the supply voltage and current. However, supply current may have a dc component with a pulse into a capacitive load, which can make rms current very difficult to calculate. It can be overcome by lifting the supply pin and inserting an rms current meter into the circuit. For this to work, be sure the current is being delivered by the supply pin being measured. This is usually a good method in a single-supply system; however, if the system uses dual supplies, both supplies may need to be monitored.

INPUT OVERVOLTAGE PROTECTION

As with any semiconductor device, whenever the condition exists for the input to exceed either supply voltage, the input overvoltage characteristic of the device must be considered. When an overvoltage occurs, the amplifier can be damaged, depending on the magnitude of the applied voltage and the magnitude of the fault current. Although not shown here, when the input voltage exceeds either supply by more than 0.6 V, pn junctions internal to the AD8531/AD8532/AD8534 energize, allowing current to flow from the input to the supplies. As illustrated in the simplified equivalent input circuit (see the AD8531/AD8532/AD8534 do not have any internal current limiting resistors; therefore, fault currents can quickly rise to damaging levels.
This input current is not inherently damaging to the device, as long as it is limited to 5 mA or less. For the AD8531/AD8532/ AD8534, once the input voltage exceeds the supply by more than
0.6 V, the input current quickly exceeds 5 mA. If this condition continues to exist, an external series resistor should be added. The size of the resistor is calculated by dividing the maximum overvoltage by 5 mA. For example, if the input voltage could reach 10 V, the external resistor should be (10 V/5 mA) = 2 kΩ.
This resistance should be placed in series with either or both inputs if they are exposed to an overvoltage condition.
Figure 36),
Rev. F | Page 12 of 20
Page 13
AD8531/AD8532/AD8534
50mV
5V
AD8532
V
C
L
47nF
OUT
01099-040
R
S
5
C
S
1µF
is determined; 10 μF is a
S
Figure 41. The top trace was
Tabl e 5

OUTPUT PHASE REVERSAL

Some operational amplifiers designed for single-supply operation exhibit an output voltage phase reversal when their inputs are driven beyond their useful common-mode range. The AD8531/ AD8532/AD8534 are free from reasonable input voltage range restrictions, provided that input voltages no greater than the supply voltage rails are applied. Although the output of the device does not change phase, large currents can flow through internal junctions to the supply rails, which was described in the Input Overvoltage Protection section. Without limit, these fault currents can easily destroy the amplifier. The technique recommended in the
Input Overvoltage Protection section should therefore be applied in those applications where the possibility of input voltages exceeding the supply voltages exists.

CAPACITIVE LOAD DRIVE

The AD8531/AD8532/AD8534 exhibit excellent capacitive load driving capabilities. They can drive up to 10 nF directly, as shown in the device is stable, a capacitive load does not come without a penalty in bandwidth. As shown in reduced to less than 1 MHz for loads greater than 10 nF. A snubber network on the output does not increase the bandwidth, but it does significantly reduce the amount of overshoot for a given capacitive load. A snubber consists of a series RC network (R C
S
device to ground. This network operates in parallel with the load capacitor, C actual value of the resistor and capacitor is best determined empirically.
Figure 25 through Figure 28. However, even though
Figure 39, the bandwidth is
), as shown in Figure 40, connected from the output of the
, to provide phase lag compensation. The
L
4.0
3.5
3.0
VS= ±2.5V
= 1k
R
L
= 25°C
T
A
,
S
V
IN
100mV p-p
Figure 40. Snubber Network Compensates for Capacitive Loads
The first step is to determine the value of the resistor, RS. A good starting value is 100 Ω. This value is reduced until the small signal transient response is optimized. Next, C good starting point. This value is reduced to the smallest value for acceptable performance (typically, 1 μF). For the case of a 47 nF load capacitor on the AD8531/AD8532/AD8534, the optimal snubber network is 5 Ω in series with 1 μF. The benefit is immediately apparent, as seen in taken with a 47 nF load, and the bottom trace was taken with the 5 Ω in series with a 1 μF snubber network in place. The amount of overshoot and ringing is dramatically reduced. illustrates a few sample snubber networks for large load capacitors.
Table 5. Snubber Networks for Large Capacitive Loads
Load Capacitance (CL) Snubber Network (RS, CS)
0.47 nF 300 Ω, 0.1 μF
4.7 nF 30 Ω, 1 μF 47 nF 5 Ω, 1 μF
ONLY
100
90
47nF LO AD
2.5
2.0
1.5
BANDWIDITH ( MHz)
1.0
0.5
0
0.01 0.1 1 10 100 CAPACITIVE LOAD ( nF)
SNUBBER
IN CIRCUIT
01099-039
10
0%
10µs50mV
Figure 41. Overshoot and Ringing Are Reduced by Adding a Snubber
Network in Parallel with the 47 nF Load
01099-041
Figure 39. Unity-Gain Bandwidth vs. Capacitive Load
Rev. F | Page 13 of 20
Page 14
AD8531/AD8532/AD8534
V
V

APPLICATIONS INFORMATION

HIGH OUTPUT CURRENT, BUFFERED REFERENCE/REGULATOR

Many applications require stable voltage outputs relatively close in potential to an unregulated input source. This low dropout type of reference/regulator is readily implemented with a rail­to-rail output op amp and is particularly useful when using a higher current device, such as the AD8531/AD8532/AD8534. A typical example is the 3.3 V or 4.5 V reference voltage developed from a 5 V system source. Generating these voltages requires a three terminal reference, such as the
REF194 (4.5 V), both of which feature low power, with sourcing
outputs of 30 mA or less.
Figure 42 shows how such a reference can be outfitted with an AD8531/AD8532/AD8534 buffer for higher currents and/or voltage levels, plus sink and source load capability.
S
5V
C1
0.1µF
C3
0.1µF
V
C
ON/OFF CONTROL INPUT CMOS HI (OR OPEN) = ON
LO = OFF
V
S
COMMON
3
2
U1
REF196
4
6
V
OUT2
3.3V
=
Figure 42. High Output Current Reference/Regulator
The low dropout performance of this circuit is provided by stage U2, an AD8531 connected as a follower/buffer for the basic reference voltage produced by U1. The low voltage saturation characteristic of the AD8531/AD8532/AD8534 allows up to 100 mA of load current in the illustrated use, as a 5 V to 3.3 V converter with good dc accuracy. In fact, the dc output voltage change for a 100 mA load current delta measures less than 1 mV. This corresponds to an equivalent output impedance of < 0.01 Ω. In this application, the stable
3.3 V from U1 is applied to U2 through a noise filter, R1 to C1. U2 replicates the U1 voltage within a few millivolts, but at a higher current output at V
OUT1
source output current(s), unlike most IC references. R2 and C2 in the feedback path of U2 provide additional noise filtering.
Transient performance of the reference/regulator for a 100 mA step change in load current is also quite good and is largely determined by the R5 to C5 output network. With values as shown, the transient is about 20 mV peak and settles to within 2 mV in less than 10 μs for either polarity. Although room exists
REF196 (3.3 V) or the
U2
R1 10k 1%
(See Text)
C4 1µF
R3
R4
3.3k
AD8531
R2
10k1%
C2
0.1µF
V
=
OUT1
3.3V @ 100mA
C5 100µF/ 16V TAN TALU M
R5
0.2
V
OUT
COMMON
, with the ability to both sink and
01099-042
for optimizing the transient response, any changes to the R5 to C5 network should be verified by experiment to preclude the possibility of excessive ringing with some capacitor types.
To s c al e V resistor R3 (shown dotted in new V
to another (higher) output level, the optional
OUT2
Figure 42) is added, causing the
to become
OUT1
R2
VV
⎛ ⎜
OUT2OUT1
+×=
1
R3
The circuit can either be used as shown, as a 5 V to 3.3 V reference/regulator, or with on/off control. By driving Pin 3 of U1 with a logic control signal as noted, the output is switched on/off. Note that when on/off control is used, R4 must be used with U1 to speed on/off switching.

SINGLE-SUPPLY, BALANCED LINE DRIVER

The circuit in Figure 43 is a unique line driver circuit topology used in professional audio applications. It was modified for automotive and multimedia audio applications. On a single 5 V supply, the line driver exhibits less than 0.7% distortion into a 600 Ω load from 20 Hz to 15 kHz (not shown) with an input signal level of 4 V p-p. In fact, the output drive capability of the AD8531/AD8532/AD8534 maintains this level for loads as small as 32 Ω. For input signals less than 1 V p-p, the THD is less than 0.1%, regardless of load. The design is a transformer­less, balanced transmission system where output common­mode rejection of noise is of paramount importance. As with the transformer-based system, either output can be shorted to ground for unbalanced line driver applications without changing the circuit gain of 1. Other circuit gains can be set according to the equation in the diagram. This allows the design to be easily configured for inverting, noninverting, or differential operation.
R3
5V
2
C1
22µF
IN
A1, A2 = 1/2 AD8532
GAIN =
SET: R7, R10, R11 = R2
SET: R6, R12, R13 = R3
A1
3
R3 R2
10k
R1
10k
10k
1
R10
10k
2
1
A2
3
R2
R7 10k
12V
7
A1
R11
R12
10k
10k
6
7
A2
5
R13
10k
R6
10k
6
5
100k
R5
50
5V
R8 100k
C2
R9
1µF
R14 50
Figure 43. Single-Supply, Balanced Line Driver for Multimedia and
Automotive Applications
C3
47µF
600
C4
47µF
V
OUT1
R
L
V
OUT2
01099-043
Rev. F | Page 14 of 20
Page 15
AD8531/AD8532/AD8534
V

SINGLE-SUPPLY HEADPHONE AMPLIFIER

Because of its speed and large output drive, the AD8531/ AD8532/AD8534 make an excellent headphone driver, as illustrated in
Figure 44. Its low supply operation and rail-to-rail inputs and outputs give a maximum signal swing on a single 5 V supply. To ensure maximum signal swing available to drive the headphone, the amplifier inputs are biased to V+/2, which in this case is 2.5 V. The 100 kΩ resistor to the positive supply is equally split into two 50 kΩ resistors, with their common point bypassed by 10 μF to prevent power supply noise from contaminating the audio signal.
The audio signal is then ac-coupled to each input through a 10 μF capacitor. A large value is needed to ensure that the 20 Hz audio information is not blocked. If the input already has the proper dc bias, the ac coupling and biasing resistors are not required. A 270 μF capacitor is used at the output to couple the amplifier to the headphone. This value is much larger than that used for the input because of the low impedance of the head­phones, which can range from 32 Ω to 600 Ω. An additional 16 Ω resistor is used in series with the output capacitor to protect the output stage of the op amp by limiting the capacitor discharge current. When driving a 48 Ω load, the circuit exhibits less than 0.3% THD+N at output drive levels of 4 V p-p.
5V
V5V
1µF/0.1µF
16
16
270µF
270µF
50k
50k
LEFT HEADPHONE
RIGHT HEADPHONE
01099-044
LEFT
INPUT
RIGHT
INPUT
50k
50k
10µF
50k
10µF
10µF
100k
V
50k
10µF
100k
1/2
AD8532
1/2
AD8532
Figure 44. Single-Supply, Stereo Headphone Driver

SINGLE-SUPPLY, 2-WAY LOUDSPEAKER CROSSOVER NETWORK

Active filters are useful in loudspeaker crossover networks because of small size, relative freedom from parasitic effects, the ease of controlling low/high channel drive, and the controlled driver damping provided by a dedicated amplifier. Both Sallen­Key (SK) and multiple-feedback (MFB) filter architectures are useful in implementing active crossover networks. The circuit shown in that combines the advantages of both filter topologies.
Figure 45 is a single-supply, 2-way active crossover
This active crossover exhibits less than 0.4% THD+N at output levels of 1.4 V rms using general-purpose, unity-gain HP/LP stages.
In this 2-way example, the LO signal is a dc-to-500 Hz LP woofer output, and the HI signal is the HP (>500 Hz) tweeter output. U1B forms an LP section at 500 Hz, while U1A provides an HP section, covering frequencies ≥500 Hz.
+
270µF
+
500Hz
AND UP
100k
DC – 500Hz
100k
HI
LO
V
IN
TO U1
R
100k
V
S
C1
0.01µF
IN
C
10µF
0.1µ F
IN
100k
100k
R2
31.6k
R5
31.6k
V
S
100µF/25V
C2
0.01µF
15.8k
C4
0.02µF
10µF
31.6k
31.6k
R7
5V
COM
R1
V
S
U1A
AD8532
3
1
2
4
R6
C3
0.01µF
6
7
5
U1B
AD8532
Figure 45. A Single-Supply, 2-Way Active Crossover
R3
49.9
R4
49.9
270µF
The crossover example frequency of 500 Hz can be shifted lower or higher by frequency scaling of either resistors or capacitors. In configuring the circuit for other frequencies, complementary LP/HP action must be maintained between sections, and component values within the sections must be in the same ratio.
Tabl e 6 provides a design aid to adaptation, with
suggested standard component values for other frequencies.
For additional information on the active filters and active crossover networks, refer to the data sheet for the
OP279, a dual rail-to-
rail, high output current, operational amplifier.
Table 6. RC Component Selection for Various Crossover Frequencies
Crossover Frequency (Hz) R1/C1 (U1A)2, R5/C3 (U1B)
1
3
100 160 kΩ/0.01 μF 200 80.6 kΩ/0.01 μF 319 49.9 kΩ/0.01 μF 500 31.6 kΩ/0.01 μF 1 k 16 kΩ/0.01 μF 2 k 8.06 kΩ/0.01 μF 5 k 3.16 kΩ/0.01 μF 10 k 1.6 kΩ/0.01 μF
1
Applicable for Filter A = 2.
2
For Sallen-Key stage U1A: R1 = R2, and C1 = C2, and so on.
3
For multiple feedback stage U1B: R6 = R5, R7 = R5/2, and C4 = 2C3.
01099-045
Rev. F | Page 15 of 20
Page 16
AD8531/AD8532/AD8534
T

DIRECT ACCESS ARRANGEMENT FOR TELEPHONE LINE INTERFACE

Figure 46 illustrates a 5 V only transmit/receive telephone line interface for 600 Ω transmission systems. It allows full duplex transmission of signals on a transformer-coupled 600 Ω line in a differential manner. A1 provides gain that can be adjusted to meet the modem output drive requirements. Both A1 and A2 are configured to apply the largest possible signal on a single supply to the transformer. Because of the high output current drive and low dropout voltage of the AD8531/AD8532/AD8534, the largest signal available on a single 5 V supply is approximately
4.5 V p-p into a 600 Ω transmission system. A3 is configured as a difference amplifier for two reasons: it prevents the transmit signal from interfering with the receive signal, and it extracts the receive signal from the transmission line for amplification by A4. The gain of A4 can be adjusted in the same manner as that of A1 to meet the input signal requirements of the modem. Standard resistor values permit the use of single in-line package (SIP) format resistor arrays.
P1 Tx GAIN ADJUST
OTELEPHONE
LINE
1:1
Z
O
600
T1 MIDCOM 671-8005
A1, A2 = 1/2 AD8532 A3, A4 = 1/2 AD8532
6.2V
6.2V
R11
10k
360
R9
10k
R12
10k
R3
R5
10k
R6
10k
R10
10k
2
A3
3
Figure 46. Single-Supply Direct Access Arrangement for Modems
2k
1
7
1
9.09k
A1
A2
R13
10k
R2
2
3
6
5
R14
14.3k
6
5
R1
10k
A4
C1
0.1µF
10µF
P2 Rx GAIN ADJUST
2k
7
5V DC
0.1µF
TRANSMIT
R7 10k
R8 10k
RECEIVE
C2
TxA
RxA
01099-046
Rev. F | Page 16 of 20
Page 17
AD8531/AD8532/AD8534

OUTLINE DIMENSIONS

2.20
2.00
1.80
1.35
1.25
1.15
PIN 1
1.00
0.90
0.70
0
.
1
0
M
X
A
0.10 COPLANARITY
123
0.30
0.15
COMPLIANT TO JEDEC STANDARDS MO-203-AA
45
0.65 BSC
2.40
2.10
1.80
1.10
0.80
SEATING PLANE
0.40
0.10
0.22
0.08
Figure 47. 5-Lead Thin Shrink Small Outline Transistor Package [SC70]
(KS-5)
Dimensions shown in millimeters
2.90 BSC
1.60 BSC
1.30
1.15
0.90
0.15 MAX
5
123
PIN 1
COMPLIANT TO JEDEC STANDARDS MO-178-A A
1.90
BSC
0.50
0.30
4
0.95 BSC
2.80 BSC
1.45 MAX
SEATING PLANE
0.22
0.08
10°
5° 0°
Figure 48. 5-Lead Small Outline Transistor Package [SOT-23]
(RJ-5)
Dimensions shown in millimeters
5.00 (0.1968)
4.80 (0.1890)
0.46
0.36
0.26
0.60
0.45
0.30
4.00 (0.1574)
3.80 (0.1497)
0.25 (0.0098)
0.10 (0.0040)
COPLANARITY
0.10
CONTROLL ING DIMENSI ONS ARE IN MILLIMETERS; INCH DI MENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRI ATE FOR USE IN DES IGN.
85
1
1.27 (0.0500)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-A A
BSC
6.20 (0.2441)
5.80 (0.2284)
4
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.31 (0.0122)
8° 0°
0.25 (0.0098)
0.17 (0.0067)
Figure 49. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body (R-8)
Dimensions shown in millimeters and (inches)
Rev. F | Page 17 of 20
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
0.40 (0.0157)
45°
012407-A
Page 18
AD8531/AD8532/AD8534
0.95
0.85
0.75
0.15
0.00
COPLANARITY
3.20
3.00
2.80
8
5
3.20
3.00
1
2.80
PIN 1
0.65 BSC
0.38
0.22
0.10
COMPLIANT TO JEDEC STANDARDS MO-187-AA
5.15
4.90
4.65
4
SEATING PLANE
1.10 MAX
0.23
0.08
8° 0°
0.80
0.60
0.40
Figure 50. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions shown in millimeters
3.10
3.00
2.90
8
5
4.50
6.40 BSC
4.40
4.30
41
PIN 1
0.65 BSC
0.15
0.05
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MO-153-AA
0.30
0.19
1.20 MAX
SEATING PLANE
0.20
0.09
8° 0°
0.75
0.60
0.45
Figure 51. 8-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-8)
Dimensions shown in millimeters
5.10
5.00
4.90
1.05
1.00
0.80
4.50
4.40
4.30
PIN 1
14
0.65 BSC
0.15
0.05
COMPLIANT TO JEDEC STANDARDS MO-153-AB-1
0.30
0.19
8
6.40 BSC
71
1.20 MAX
SEATING PLANE
0.20
0.09
COPLANARITY
0.10
8° 0°
0.75
0.60
0.45
Figure 52. 14-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-14)
Dimensions shown in millimeters
Rev. F | Page 18 of 20
Page 19
AD8531/AD8532/AD8534
8.75 (0.3445)
8.55 (0.3366)
BSC
8
7
6.20 (0.2441)
5.80 (0.2283)
1.75 (0.0689)
1.35 (0.0531)
SEATING PLANE
8° 0°
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0197)
0.25 (0.0098)
1.27 (0.0500)
0.40 (0.0157)
45°
060606-A
4.00 (0.1575)
3.80 (0.1496)
0.25 (0.0098)
0.10 (0.0039)
COPLANARIT Y
0.10
CONTROLL ING DIMENSIONS ARE IN MILLI METERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-O FF MIL LIMETE R EQUIVALENTS FOR REFERENCE ON LY AND ARE NOT APPROPRI ATE FOR USE IN DESIGN.
14
1
1.27 (0.0500)
0.51 (0.0201)
0.31 (0.0122)
COMPLIANT TO JEDEC STANDARDS MS-012-AB
Figure 53. 14-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-14)
Dimensions shown in millimeters and (inches)
Rev. F | Page 19 of 20
Page 20
AD8531/AD8532/AD8534

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding
AD8531AKS-R2 −40°C to +85°C 5-Lead SC70 KS-5 A7B AD8531AKS-REEL7 −40°C to +85°C 5-Lead SC70 KS-5 A7B AD8531AKSZ-R2 AD8531AKSZ-REEL7 AD8531ART-REEL −40°C to +85°C 5-Lead SOT-23 RJ-5 A7A AD8531ART-REEL7 −40°C to +85°C 5-Lead SOT-23 RJ-5 A7A AD8531ARTZ-REEL AD8531ARTZ-REEL7 AD8531AR −40°C to +85°C 8-Lead SOIC_N R-8 AD8531AR-REEL −40°C to +85°C 8-Lead SOIC_N R-8 AD8531ARZ AD8531ARZ-REEL AD8532AR −40°C to +85°C 8-Lead SOIC_N R-8 AD8532AR-REEL −40°C to +85°C 8-Lead SOIC_N R-8 AD8532AR-REEL7 −40°C to +85°C 8-Lead SOIC_N R-8 AD8532ARZ AD8532ARZ-REEL AD8532ARZ-REEL7 AD8532ARM-R2 −40°C to +85°C 8-Lead MSOP RM-8 ARA AD8532ARM-REEL −40°C to +85°C 8-Lead MSOP RM-8 ARA AD8532ARMZ-R2 AD8532ARMZ-REEL AD8532ARU −40°C to +85°C 8-Lead TSSOP RU-8 AD8532ARU-REEL −40°C to +85°C 8-Lead TSSOP RU-8 AD8532ARUZ AD8532ARUZ-REEL AD8534AR −40°C to +85°C 14-Lead SOIC_N R-14 AD8534AR-REEL −40°C to +85°C 14-Lead SOIC_N R-14 AD8534ARZ AD8534ARZ-REEL AD8534ARU −40°C to +85°C 14-Lead TSSOP RU-14 AD8534ARU-REEL −40°C to +85°C 14-Lead TSSOP RU-14 AD8534ARUZ AD8534ARUZ-REEL
1
Z = RoHS Compliant Part.
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
−40°C to +85°C 5-Lead SC70 KS-5 A0Q
−40°C to +85°C 5-Lead SC70 KS-5 A0Q
−40°C to +85°C 5-Lead SOT-23 RJ-5 A0P
−40°C to +85°C 5-Lead SOT-23 RJ-5 A0P
−40°C to +85°C 8-Lead SOIC_N R-8
−40°C to +85°C 8-Lead SOIC_N R-8
−40°C to +85°C 8-Lead SOIC_N R-8
−40°C to +85°C 8-Lead SOIC_N R-8
−40°C to +85°C 8-Lead SOIC_N R-8
−40°C to +85°C 8-Lead MSOP RM-8 A0R
−40°C to +85°C 8-Lead MSOP RM-8 A0R
−40°C to +85°C 8-Lead TSSOP RU-8
−40°C to +85°C 8-Lead TSSOP RU-8
−40°C to +85°C 14-Lead SOIC_N R-14
−40°C to +85°C 14-Lead SOIC_N R-14
−40°C to +85°C 14-Lead TSSOP RU-14
−40°C to +85°C 14-Lead TSSOP RU-14
©1996–2008 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D01099-0-1/08(F)
Rev. F | Page 20 of 20
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