Analog Devices AD8531 2 4 d Datasheet

Low Cost, 250 mA Output
1
2
3
5
4
IN A
+IN A
V+
OUT A
AD8531
V
a
FEATURES Single-Supply Operation: 2.7 Volts to 6 Volts High Output Current: 250 mA Low Supply Current: 750 ␮A/Amplifier Wide Bandwidth: 3 MHz Slew Rate: 5 V/␮s No Phase Reversal Low Input Currents Unity Gain Stable Rail-to-Rail Input and Output
APPLICATIONS Multimedia Audio LCD Driver ASIC Input or Output Amplifier Headphone Driver

GENERAL DESCRIPTION

The AD8531, AD8532, and AD8534 are single, dual and quad rail-to-rail input and output single-supply amplifiers featuring 250 mA output drive current. This high output current makes these amplifiers excellent for driving either resistive or capacitive loads. AC performance is very good with 3 MHz bandwidth, 5 V/ms slew rate and low distortion. All are guaranteed to oper­ate from a 3 volt single supply as well as a 5 volt supply.
The very low input bias currents enable the AD853x to be used for integrators, diode amplification and other applications requiring low input bias current. Supply current is only 750 mA per amplifier at 5 volts, allowing low current applications to control high current loads.
Applications include audio amplification for computers, sound ports, sound cards and set-top boxes. The AD853x family is very stable and capable of driving heavy capacitive loads, such as those found in LCDs.
The ability to swing rail-to-rail at the inputs and outputs enables designers to buffer CMOS DACs, ASICs or other wide output swing devices in single-supply systems.
The AD8531, AD8532, and AD8534 are specified over the extended industrial (–40C to +85C) temperature range. The AD8531. The AD8532 is available in 8-lead SOIC, MSOP, TSSOP surface-mount packages. The AD8534 is available in narrow SO-14 and 14-lead TSSOP surface-mount packages. All TSSOP, SOT, and SC70 versions are available in tape and reel only.
Single-Supply Amplifiers

PIN CONFIGURATIONS

5-Lead SC70 and SOT-23
(KS and RT Suffixes)
8-Lead SOIC, TSSOP, and MSOP
(R, RU, and RM Suffixes)
1
NULL
AD8531
2
–IN A
3
+IN A
4
V–
8-Lead SOIC, TSSOP, and MSOP
(R, RU, and RM Suffixes)
OUT A
1
–IN A
2
3
+IN A
4
V–
14-Lead SOIC, and TSSOP
(R, and RU Suffixes)
1
OUT A
2
–IN A
3
+IN A
4
V+
5
+IN B
6
–IN B
7
OUT B
AD8532
AD8534
8
NC
V+
7
OUT A
6
5
NULL
8
V+
7
OUT B
6
–IN B
5
+IN B
14
OUT D
–IN D
13
12
+IN D
11
V–
10
+IN C
9
–IN C
8
OUT C
REV. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002
AD8531/AD8532/AD8534–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ VS = 3.0 V, VCM = 1.5 V, TA = 25C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
B
OS
OS
–40C £ T
–40C £ T
–40C £ T
£ +85C30mV
A
550 pA
£ +85C60pA
A
125 pA
£ +85C30pA
A
25 mV
Input Voltage Range 0 3 V Common-Mode Rejection Ratio CMRR V Large Signal Voltage Gain A Offset Voltage Drift DV Bias Current Drift DI
VO
/DT20mV/∞C
OS
/DT50fA/∞C
B
= 0 V to 3 V 38 45 dB
CM
RL = 2 kW, VO = 0.5 V to 2.5 V 25 V/mV
Offset Current Drift DIOS/DT20fA/∞C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Output Current I Closed-Loop Output Impedance Z
OH
OL
OUT
OUT
IL = 10 mA 2.85 2.92 V –40C £ T
£ +85C 2.8 V
A
IL = 10 mA 60 100 mV –40C £ T
£ +85C 125 mV
A
± 250 mA
f = 1 MHz, AV = 1 60 W
POWER SUPPLY
Power Supply Rejection Ratio PSRR V Supply Current/Amplifier I
SY
= 3 V to 6 V 45 55 dB
S
VO = 0 V 0.70 1 mA –40C £ TA £ +85C1.25 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kW 3.5 V/ms Settling Time t
S
To 0.01% 1.6 ms
Gain Bandwidth Product GBP 2.2 MHz Phase Margin fo70Degrees Channel Separation CS f = 1 kHz, RL = 2 kW 65 dB
NOISE PERFORMANCE
Voltage Noise Density e
n
f = 1 kHz 45 nV/÷Hz f = 10 kHz 30 nV/÷Hz
Current Noise Density i
Specifications subject to change without notice.
n
f = 1 kHz 0.05 pA/÷Hz
–2–
REV. D
AD8531/AD8532/AD8534
ELECTRICAL CHARACTERISTICS
(@ VS = 5.0 V, VCM = 2.5 V, TA = 25C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
B
OS
OS
–40C £ T
–40C £ T
–40C £ T
£ +85C30mV
A
550 pA
£ +85C60pA
A
125 pA
£ +85C30pA
A
25 mV
Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR V Large Signal Voltage Gain A Offset Voltage Drift DV Bias Current Drift DI
VO
/DT –40C £ TA £ +85C20mV/∞C
OS
/DT50fA/∞C
B
= 0 V to 5 V 38 47 dB
CM
RL = 2 kW, VO = 0.5 V to 4.5 V 15 80 V/mV
Offset Current Drift DIOS/DT20fA/∞C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Output Current I Closed-Loop Output Impedance Z
OH
OL
OUT
OUT
IL = 10 mA 4.9 4.94 V –40C £ T
£ +85C4.85 V
A
IL = 10 mA 50 100 mV –40C £ T
£ +85C 125 mV
A
± 250 mA
f = 1 MHz, AV = 1 40 W
POWER SUPPLY
Power Supply Rejection Ratio PSRR V Supply Current/Amplifier I
SY
= 3 V to 6 V 45 55 dB
S
VO = 0 V 0.75 1.25 mA –40C £ TA £ +85C1.75 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kW 5V/ms Full-Power Bandwidth BW Settling Time t
S
p
1% Distortion 350 kHz To 0.01% 1.4 ms
Gain Bandwidth Product GBP 3 MHz Phase Margin fo70Degrees Channel Separation CS f = 1 kHz, RL = 2 kW 65 dB
NOISE PERFORMANCE
Voltage Noise Density e
n
f = 1 kHz 45 nV/÷Hz f = 10 kHz 30 nV/÷Hz
Current Noise Density i
Specifications subject to change without notice.
n
f = 1 kHz 0.05 pA/÷Hz
REV. D
–3–
AD8531/AD8532/AD8534
WARNING!
ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

1

PACKAGE INFORMATION

Supply Voltage (VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to V
S
Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . ± 6 V
Storage Temperature Range . . . . . . . . . . . . –65C to +150∞C
Operating Temperature Range . . . . . . . . . . . –40C to +85∞C
Junction Temperature Range . . . . . . . . . . . . –65C to +150∞C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300∞C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; the functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
For supplies less than +6 volts, the differential input voltage is equal to ± VS.
Package Type JA*
JC
5-Lead SC70 (KS) 376 126 ∞C/W 5-Lead SOT-23 (RT) 230 146 ∞C/W 8-Lead SOIC (RN) 158 43 ∞C/W 8-Lead MSOP (RM) 210 45 ∞C/W 8-Lead TSSOP (RU) 240 43 ∞C/W 14-Lead SOIC (RN) 120 36 ∞C/W 14-Lead TSSOP (RU) 240 43 ∞C/W
*qJA is specified for the worst case conditions, i.e., qJA is specified for device in socket
for P-DIP packages; qJA is specified for device soldered onto a circuit board for surface-mount packages.
Unit

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding Information
AD8531AKS* –40C to +85∞C 5-Lead SC70 KS-5 A7B AD8531AR –40C to +85∞C 8-Lead SOIC RN-8 AD8531ART* –40C to +85∞C 5-Lead SOT-23 RT-5 A7A
AD8532AR –40C to +85∞C 8-Lead SOIC RN-8 AD8532ARM* –40C to +85∞C 8-Lead MSOP RM-8 ARA AD8532ARU* –40C to +85∞C 8-Lead TSSOP RU-8
AD8534AR –40C to +85∞C 14-Lead SOIC RN-14 AD8534ARU* –40C to +85∞C 14-Lead TSSOP RU-14
*Available in reels only.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8531/AD8532/AD8534 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
2.5
–V
OL
2
+V
OH
1.5
OUT
V
1
0.5
0
020406080100 120 140 160 180 200
R
LOAD –
Figure 1. Output Voltage vs. Load. VS = ±2.5 V, RL Is Connected to GND (0 V)
–4–
REV. D
Typical Performance Characteristics–AD8531/AD8532/AD8534
g
VS = 2.7V
V
= 1.35V
500
400
300
200
QUANTITY – Amplifiers
100
–12
–10 –8 –6 –4 –2 0 2 4
INPUT OFFSET VOLTAGE – mV
T
CM
= 25ⴗC
A
Figure 2. Input Offset Voltage Distribution
VS = 5V, 3V
8
V
= VS/2
CM
7
6
5
4
3
INPUT BIAS CURRENT – pA
2
–35 –15 5 25 45 65
TEMPERATURE – ⴗC
Figure 5. Input Bias Current vs. Temperature
VS = 5V
= 2.5V
V
500
400
300
200
QUANTITY – Amplifiers
100
–12
–10 –8 –6 –4 –2 0 2 4
INPUT OFFSET VOLTAGE – mV
T
CM
= 25ⴗC
A
Figure 3. Input Offset Voltage Distribution
VS = 5V
T
= 25ⴗC
A
8
7
6
5
4
3
2
INPUT BIAS CURRENT – pA
1
85
01234 5
COMMON-MODE VOLTAGE – Volts
Figure 6. Input Bias Current vs. Common-Mode Voltage
–2
–3
–4
–5
–6
–7
INPUT OFFSET VOLTAGE – mV
–8
–35 –15 5 25 45 65
TEMPERATURE – ⴗC
Figure 4. Input Offset Voltage vs. Temperature
6
VS = 5V, 3V
5
V
= VS/2
CM
4
3
2
1
0
INPUT OFFSET CURRENT – pA
–1
–2
–35 –15 5 25 45 65 85
TEMPERATURE – ⴗC
Figure 7. Input Offset Current vs. Temperature
VS = 5V
V
= 2.5V
CM
85
1000
VS = 2.7V
TA = 25ⴗC
100
SOURCE
10
1
OUTPUT VOLTAGE – mV
0.1
0.01 0.1 1000110100 LOAD CURRENT – mA
SINK
Figure 8. Output Voltage to Supply Rail vs. Load Current
10000
VS = 5V
T
= 25ⴗC
A
1000
100
10
OUTPUT VOLTAGE – mV
1
0.01
0.01 0.1 1000110100
SOURCE
SINK
LOAD CURRENT – mA
Figure 9. Output Voltage to Supply Rail vs. Load Current
VS = 2.7V
R
= NO LOAD
L
T
= 25ⴗC
A
80
60
40
20
GAIN – dB
0
1k 10k 100k 1M 10M 100M
FREQUENCY – Hz
Figure 10. Open-Loop Gain and Phase vs. Frequency
rees
45
90
135
180
PHASE SHIFT – De
REV. D
–5–
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