Analog Devices AD8519, AD8529 Datasheet

8 MHz Rail-to-Rail

1

2

3

5

4

2IN A

+IN A

V+

OUT A

AD8519

V2

a

FEATURES
Space-Saving SOT-23, ␮SOIC Packaging
Wide Bandwidth: 8 MHz @ 5 V
Low Offset Voltage: 1.2 mV Max
Rail-to-Rail Output Swing

2.7 V/␮s Slew Rate
Unity Gain Stable
Single Supply Operation: +2.7 V to +12 V

APPLICATIONS

Portable Communications
Microphone Amplifiers
Portable Phones
Sensor Interface
Active Filters
PCMCIA Cards
ASIC Input Drivers
Wearable Computers
Battery Powered Devices
Voltage Reference Buffers
Personal Digital Assistants

GENERAL DESCRIPTION

The AD8519 and AD8529 are rail-to-rail output bipolar amplifi­ers with a unity gain bandwidth of 8 MHz and a typical voltage
offset of less than 1 mV. The AD8519 brings precision and band­width to the SOT-23 package. The low supply current makes the
AD8519/AD8529 ideal for battery powered applications. The
rail-to-rail output swing of the AD8519/AD8529 is larger than
standard video op amps, making them useful in applications that
require greater dynamic range than standard video op amps. The

+2.7 V/µs slew rate makes the AD8529/AD8549 a good match

for driving ASIC inputs such as voice codecs.

The small SOT-23 package makes it possible to place the AD8519
next to sensors, reducing external noise pickup.

The AD8519/AD8529 is specified over the extended industrial

(–40°C to +125°C) temperature range. The AD8519 is avail-

able in 5-lead SOT-23-5 and SO-8 surface mount packages.

The AD8529 is available in 8-lead SOIC and µSOIC packages.

Operational Amplifiers

AD8519/AD8529

PIN CONFIGURATIONS

8-Lead SOIC

(R Suffix)

AD8519

NC

1

2IN A

2

+IN A

3

V2

4

NC = NO CONNECT

5-Lead SOT-23

(RT Suffix)

8-Lead SOIC

(R Suffix)

OUT A

18

AD8529

27

2IN A
1IN A

TOP VIEW

36
45

V2

8-Lead ␮SOIC

(RM Suffix)

V2

1

AD8529

45

OUT A

2IN A
1IN A

NC

8

V+

7

OUT A

6

NC

5

V1
OUT B

2IN B
1IN B

8

V1

OUT B

2IN B
1IN B

REV. A

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reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1998

AD8519/AD8529–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(VS = +5.0 V, V– = 0 V, VCM = +2.5 V, TA = +25ⴗC unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

Offset Voltage V

Input Bias Current I

Input Offset Current I

Input Voltage Range V

OS

OS

B

OS

CM

Common-Mode Rejection Ratio CMRR 0 V ≤ V

Large Signal Voltage Gain A

Offset Voltage Drift ∆V

VO

/∆T2µV/°C

OS

AD8519ART (SOT-23-5) 600 1,100 µV
–40°C ≤ T

≤ +125°C 800 1,300 µV

A

AD8519AR (SO-8), AD8529 600 1,000 µV
–40°C ≤ T

≤ +125°C 1,100 µV

A

300 nA

–40°C ≤ T

≤ +125°C 400 nA

A

±50 nA

–40°C ≤ T

≤ +125°C ±100 nA

A

0+4V

≤ +4.0 V,

CM

–40°C ≤ T

R

= 2 kΩ, +0.5 V < V

L

= 10 kΩ, +0.5 V < V

R

L

= 10 kΩ, –40°C ≤ TA ≤ +125°C 30 V/mV

R

L

≤ +125°C 63 100 dB

A

< +4.5 V 30 V/mV

OUT

< +4.5 V 50 100 V/mV

OUT

Bias Current Drift ∆IB/∆T 500 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

Short Circuit Current I
Maximum Output Current I

OH

OL

SC

OUT

I

= 250 µA

L

–40°C ≤ T

= 5 mA +4.80 V

I

L

I

= 250 µA

L

–40°C ≤ T

= 5 mA 200 mV

I

L

≤ +125°C +4.90 V

A

≤ +125°C80mV

A

Short to Ground, Instantaneous ±70 mA

±25 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

SY

= +2.7 V to +7 V, 110 dB

S

–40°C ≤ T

V

OUT

≤ +125°C80dB

A

= +2.5 V 600 1,200 µA

–40°C ≤ TA ≤ +125°C 1,400 µA

DYNAMIC PERFORMANCE

Slew Rate SR +1 V < V
Settling Time t

S

To 0.01% 1,200 ns

< +4 V, R

OUT

= 10 kΩ 2.9 V/µs

L

Gain Bandwidth Product GBP 8 MHz

Phase Margin φ

m

60 Degrees

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

p-p 0.1 Hz to 10 Hz 0.5 µV p-p

n

n

n

f = 1 kHz 7 nV/√Hz
f = 1 kHz 0.4 pA/√Hz

–2– REV. A

AD8519/AD8529

ELECTRICAL CHARACTERISTICS

(VS = +3.0 V, V– = 0 V, VCM = +1.5 V, TA = +25ⴗC unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

Input Bias Current I
Input Offset Current I
Input Voltage Range V

OS

V

OS

B

OS

CM

Common-Mode Rejection Ratio CMRR 0 V ≤ V

Large Signal Voltage Gain A

VO

AD8519ART (SOT-23-5) 700 1,200 µV
–40°C ≤ T

≤ +125°C 900 1,400 µV

A

AD8519AR (SO-8), AD8529 700 1,100 µV
–40°C ≤ T

≤ +125°C 1,200 µV

A

300 nA

±50 nA

0+2V

≤ +2.0 V,

CM

–40°C ≤ T

R

= 2 kΩ, +0.5 V < V

L

R

= 10 kΩ 20 30 V/mV

L

≤ +125°C5575dB

A

< +2.5 V 20 V/mV

OUT

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

OH

OL

I

= 250 µA +2.90 V

L

= 5 mA +2.80 V

I

L

I

= 250 µA 100 mV

L

IL = 5 mA 200 mV

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

SY

= +2.5 V to +7 V,

S

–40°C ≤ T

V

OUT

≤ +125°C6080dB

A

= +1.5 V 600 1,100 µA

–40°C ≤ TA ≤ +125°C 1,300 µA

DYNAMIC PERFORMANCE

Slew Rate SR R
Settling Time t

S

= 10 kΩ 1.5 V/µs

L

To 0.01% 2,000 ns

Gain Bandwidth Product GBP 6 MHz

Phase Margin φ

m

55 Degrees

NOISE PERFORMANCE

Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

n

n

f = 1 kHz 10 nV/√Hz
f = 1 kHz 0.4 pA/√Hz

–3–REV. A

AD8519/AD8529–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(VS = +2.7 V, V– = 0 V, VCM = +1.35 V, TA = +25ⴗC unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

Input Bias Current I
Input Offset Current I
Input Voltage Range V

OS

V

OS

B

OS

CM

Common-Mode Rejection Ratio CMRR 0 V ≤ V

Large Signal Voltage Gain A

VO

AD8519ART (SOT-23-5) 700 1,400 µV
–40°C ≤ T

≤ +125°C 900 1,600 µV

A

AD8519AR (SO-8), AD8529 700 1,200 µV
–40°C ≤ T

≤ +125°C 1,300 µV

A

300 nA

±50 nA

0+2V

≤ +1.7 V,

CM

–40°C ≤ T

R

= 2 kΩ, +0.5 V < V

L

R

= 10 kΩ 20 30 V/mV

L

≤ +125°C5575dB

A

< +2.2 V 20 V/mV

OUT

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

OH

OL

I

= 250 µA +2.60 V

L

= 5 mA +2.50 V

I

L

I

= 250 µA 100 mV

L

IL = 5 mA 200 mV

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

SY

= +2.5 V to +7 V,

S

–40°C ≤ T

V

OUT

≤ +125°C6080dB

A

= +1.35 V 600 1,100 µA

–40°C ≤ TA ≤ +125°C 1,300 µA

DYNAMIC PERFORMANCE

Slew Rate SR R
Settling Time t

S

= 10 kΩ 1.5 V/µs

L

To 0.01% 2,000 ns

Gain Bandwidth Product GBP 6 MHz

Phase Margin φ

m

55 Degrees

NOISE PERFORMANCE

Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

n

n

f = 1 kHz 10 nV/√Hz
f = 1 kHz 0.4 pA/√Hz

–4– REV. A