ANALOG DEVICES AD 8510 ARMZ Datasheet

Precision, Very Low Noise, Low Input Bias Current,

FEATURES

Fast settling time: 500 ns to 0.1%
Low offset voltage: 400 μV maximum
Low T
Low input bias current: 25 pA typical at V
Dual-supply operation: ±5 V to ±15 V
Low noise: 8 nV/√Hz typical at f = 1 kHz
Low distortion: 0.0005%
No phase reversal
Unity gain stable

APPLICATIONS

Instrumentation
Multipole filters
Precision current measurement
Photodiode amplifiers
Sensors
Audio

: 1 μV/°C typical

CVOS

= ±15 V

S

Wide Bandwidth JFET Operational Amplifiers

AD8510/AD8512/AD8513

PIN CONFIGURATIONS

NULL

1

AD8510

–IN

2

TOP VIEW

+IN

3

(Not to Scale)

V–

45

NC = NO CONNECT

Figure 1. 8-Lead MSOP (RM Suffix) Figure 2. 8-Lead SOIC_N (R Suffix)

OUT A

1

–IN A

+IN A

AD8512

2

TOP VIEW

3

(Not to Scale)

V–

45

Figure 3. 8-Lead MSOP (RM Suffix) Figure 4. 8-Lead SOIC_N (R Suffix)

OUT A

1

–IN A

2

3

+IN A

+IN B

–IN B

OUT B

V+

AD8513

4

TOP VIEW

(Not to Scale)

5

6

7

Figure 5. 14-Lead SOIC_N (R Suffix) Figure 6. 14-Lead TSSOP (RU Suffix)

14

13

12

11

10

8

7

6

8

7

6

9

8

NC

V+

OUT

NULL

V+

OUT B

–IN B

+IN B

OUT D

–IN D

+IN D

V–

+IN C

–IN C

OUT C

NULL

1

AD8510

–IN

2

TOP VIEW

+IN

3

(Not to Scale)

V–

45

02729-003

02729-001

02729-005

NC = NO CONNECT

OUT A

1

–IN A

+IN A

OUT A

–IN A

+IN A

+IN B

–IN B

OUT B

AD8512

2

TOP VIEW

3

(Not to Scale)

V–

45

1

2

3

AD8513

4

V+

TOP VIEW

(Not to Scale)

5

6

7

8

7

6

14

13

12

11

10

9

8

8

7

6

NC

V+

OUT

NULL

V+

OUT B

–IN B

+IN B

OUT D

–IN D

+IN D

V–

+IN C

–IN C

OUT C

02729-004

02729-002

2729-006

GENERAL DESCRIPTION

The AD8510/AD8512/AD8513 are single-, dual-, and quad­precision JFET amplifiers that feature low offset voltage, input
bias current, input voltage noise, and input current noise.

The combination of low offsets, low noise, and very low input
bias currents makes these amplifiers especially suitable for high
impedance sensor amplification and precise current measurements
using shunts. The combination of dc precision, low noise, and
fast settling time results in superior accuracy in medical
instruments, electronic measurement, and automated test
equipment. Unlike many competitive amplifiers, the AD8510/
AD8512/AD8513 maintain their fast settling performance even
with substantial capacitive loads. Unlike many older JFET
amplifiers, the AD8510/AD8512/AD8513 do not suffer from
output phase reversal when input voltages exceed the maximum
common-mode voltage range.

Fast slew rate and great stability with capacitive loads make the
AD8510/AD8512/AD8513 a perfect fit for high performance
filters. Low input bias currents, low offset, and low noise result
in a wide dynamic range of photodiode amplifier circuits. Low
noise and distortion, high output current, and excellent speed
make the AD8510/AD8512/AD8513 great choices for audio
applications.

The AD8510/AD8512 are both available in 8-lead narrow SOIC_N
and 8-lead MSOP packages. MSOP-packaged parts are only
available in tape and reel. The AD8513 is available in 14-lead
SOIC_N and TSSOP packages.

The AD8510/AD8512/AD8513 are specified over the −40°C to
+125°C extended industrial temperature range.

Rev. I

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2002–2009 Analog Devices, Inc. All rights reserved.

AD8510/AD8512/AD8513

TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1

Pin Configurations ........................................................................... 1

General Description ......................................................................... 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

Electrical Characteristics ............................................................. 4

Absolute Maximum Ratings ............................................................ 6

ESD Caution .................................................................................. 6

Typical Performance Characteristics ............................................. 7

General Application Information ................................................. 13

Input Overvoltage Protection ................................................... 13

REVISION HISTORY

2/09—Rev. H to Rev. I

Changes to Figure 25 ...................................................................... 10

Changes to Ordering Guide .......................................................... 20

10/07—Rev. G to Rev. H

Changes to Crosstalk Section ........................................................ 18

Added Figure 58 .............................................................................. 18

6/07—Rev. F to Rev. G

Changes to Figure 1 and Figure 2 ................................................... 1

Changes to Table 1 and Table 2 ....................................................... 3

Updated Outline Dimensions ....................................................... 19

Changes to Ordering Guide .......................................................... 20

6/06—Rev. E to Rev. F

Changes to Figure 23 ........................................................................ 9

Updated Outline Dimensions ....................................................... 19

Changes to Ordering Guide .......................................................... 20

6/04—Rev. D to Rev. E

Changes to Format ............................................................. Universal

Changes to Specifications ................................................................ 3

Updated Outline Dimensions ....................................................... 19

10/03—Rev. C to Rev. D

Added AD8513 Model ....................................................... Universal

Changes to Specifications ................................................................ 3

Added Figure 36 through Figure 40 ............................................. 10

Added Figure 55 and Figure 57..................................................... 17

Changes to Ordering Guide .......................................................... 20

Output Phase Reversal ............................................................... 13

Total Harmonic Distortion (THD) + Noise .............................. 13

Total Noise Including Source Resistors ................................... 13

Settling Time ............................................................................... 14

Overload Recovery Time .......................................................... 14

Capacitive Load Drive ............................................................... 14

Open-Loop Gain and Phase Response .................................... 15

Precision Rectifiers ..................................................................... 16

I-V Conversion Applications .................................................... 17

Outline Dimensions ....................................................................... 19

Ordering Guide .......................................................................... 20

9/03—Rev. B to Rev. C

Changes to Ordering Guide ............................................................ 4

Updated Figure 2 ............................................................................ 10

Changes to Input Overvoltage Protection Section .................... 10

Changes to Figure 10 and Figure 11............................................. 12

Changes to Photodiode Circuits Section .................................... 13

Changes to Figure 13 and Figure 14............................................. 13

Deleted Precision Current Monitoring Section ......................... 14

Updated Outline Dimensions ....................................................... 15

3/03—Rev. A to Rev. B

Updated Figure 5 ............................................................................ 11

Updated Outline Dimensions ....................................................... 15

8/02—Rev. 0 to Rev. A

Added AD8510 Model ....................................................... Universal

Added Pin Configurations ............................................................... 1

Changes to Specifications ................................................................. 2

Changes to Ordering Guide ............................................................. 4

Changes to TPC 2 and TPC 3 .......................................................... 5

Added TPC 10 and TPC 12 .............................................................. 6

Replaced TPC 20 ............................................................................... 8

Replaced TPC 27 ............................................................................... 9

Changes to General Application Information Section .............. 10

Changes to Figure 5 ........................................................................ 11

Changes to I-V Conversion Applications Section ..................... 13

Changes to Figure 13 and Figure 14............................................. 13

Changes to Figure 17 ...................................................................... 14

Rev. I | Page 2 of 20

AD8510/AD8512/AD8513

SPECIFICATIONS

@ VS = ±5 V, VCM = 0 V, TA = 25°C, unless otherwise noted.

Table 1.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage (B Grade)

−40°C < TA < +125°C 0.8 mV
Offset Voltage (A Grade) VOS 0.1 0.9 mV

−40°C < TA < +125°C 1.8 mV
Input Bias Current IB 21 75 pA

−40°C < TA < +85°C 0.7 nA

−40°C < TA < +125°C 7.5 nA
Input Offset Current IOS 5 50 pA

−40°C < TA < +85°C 0.3 nA

−40°C < TA < +125°C 0.5 nA
Input Capacitance

Differential 12.5 pF

Common Mode 11.5 pF
Input Voltage Range −2.0 +2.5 V
Common-Mode Rejection Ratio CMRR VCM = −2.0 V to +2.5 V 86 100 dB
Large-Signal Voltage Gain AVO R
Offset Voltage Drift (B Grade)1 ΔVOS/ΔT 0.9 5 μV/°C
Offset Voltage Drift (A Grade) ΔVOS/ΔT 1.7 12 μV/°C

OUTPUT CHARACTERISTICS

Output Voltage High VOH RL = 10 kΩ 4.1 4.3 V
Output Voltage Low VOL RL = 10 kΩ, −40°C < TA < +125°C −4.9 −4.7 V
Output Voltage High VOH RL = 2 kΩ 3.9 4.2 V
Output Voltage Low VOL RL = 2 kΩ, −40°C < TA < +125°C −4.9 −4.5 V
Output Voltage High VOH RL = 600 Ω 3.7 4.1 V
Output Voltage Low VOL RL = 600 Ω, −40°C < TA < +125°C −4.8 −4.2 V
Output Current I

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 130 dB
Supply Current/Amplifier I

AD8510/AD8512/AD8513 VO = 0 V 2.0 2.3 mA

AD8510/AD8512 −40°C < TA < +125°C 2.5 mA

AD8513 −40°C < TA < +125°C 2.75 mA

DYNAMIC PERFORMANCE

Slew Rate SR RL = 2 kΩ 20 V/μs
Gain Bandwidth Product GBP 8 MHz
Settling Time tS To 0.1%, 0 V to 4 V step, G = +1 0.4 μs
Total Harmonic Distortion (THD) + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 %
Phase Margin φ

NOISE PERFORMANCE

Voltage Noise Density en f = 10 Hz 34 nV/√Hz

f = 100 Hz 12 nV/√Hz
f = 1 kHz 8.0 10 nV/√Hz
f = 10 kHz 7.6 nV/√Hz

Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz bandwidth 2.4 5.2 μV p-p

1

AD8510/AD8512 only.

1

V

0.08 0.4 mV

OS

= 2 kΩ, VO = −3 V to +3 V 65 107 V/mV

L

±40 ±54 mA

OUT

SY

M

44.5 Degrees

Rev. I | Page 3 of 20

AD8510/AD8512/AD8513

ELECTRICAL CHARACTERISTICS

@ VS = ±15 V, VCM = 0 V, TA = 25°C, unless otherwise noted.

Table 2.

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage (B Grade)1 VOS 0.08 0.4 mV

−40°C < TA < +125°C 0.8 mV

Offset Voltage (A Grade) VOS 0.1 1.0 mV

−40°C < TA < +125°C 1.8 mV
Input Bias Current IB 25 80 pA

−40°C < TA < +85°C 0.7 nA

−40°C < TA < +125°C 10 nA
Input Offset Current I

−40°C < TA < +85°C 0.3 nA

−40°C < TA < +125°C 0.5 nA
Input Capacitance

Differential 12.5 pF

Common Mode 11.5 pF
Input Voltage Range −13.5 +13.0 V
Common-Mode Rejection Ratio CMRR VCM = −12.5 V to +12.5 V 86 108 dB
Large-Signal Voltage Gain AVO

Offset Voltage Drift (B Grade)1 ΔVOS/ΔT 1.0 5 μV/°C
Offset Voltage Drift (A Grade) ΔVOS/ΔT 1.7 12 μV/°C

OUTPUT CHARACTERISTICS

Output Voltage High VOH RL = 10 kΩ +14.0 +14.2 V
Output Voltage Low VOL RL = 10 kΩ, −40°C < TA < +125°C −14.9 −14.6 V
Output Voltage High VOH RL = 2 kΩ +13.8 +14.1 V
Output Voltage Low VOL RL = 2 kΩ, −40°C < TA < +125°C –14.8 −14.5 V
Output Voltage High VOH RL = 600 Ω +13.5 +13.9 V

R

Output Voltage Low VOL RL = 600 Ω −14.3 −13.8 V

R

Output Current I

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 dB
Supply Current/Amplifier ISY

AD8510/AD8512/AD8513 VO = 0 V 2.2 2.5 mA

AD8510/AD8512 −40°C < TA < +125°C 2.6 mA

AD8513 −40°C < TA < +125°C 3.0 mA

DYNAMIC PERFORMANCE

Slew Rate SR RL = 2 kΩ 20 V/μs
Gain Bandwidth Product GBP 8 MHz
Settling Time tS To 0.1%, 0 V to 10 V step, G = +1 0.5 μs

To 0.01%, 0 V to 10 V step, G = +1 0.9 μs

Total Harmonic Distortion (THD) + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 %
Phase Margin φM 52 Degrees

6 75 pA

OS

= 2 kΩ, VCM = 0 V,

R

L

V

= −13.5 V to +13.5 V

O

= 600 Ω, −40°C < TA < +125°C +11.4 V

L

= 600 Ω, −40°C < TA < +125°C −12.1 V

L

±70 mA

OUT

115 196 V/mV

Rev. I | Page 4 of 20

AD8510/AD8512/AD8513

Parameter Symbol Conditions Min Typ Max Unit

NOISE PERFORMANCE

Voltage Noise Density en f = 10 Hz 34 nV/√Hz
f = 100 Hz 12 nV/√Hz
f = 1 kHz 8.0 10 nV/√Hz
f = 10 kHz 7.6 nV/√Hz

Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz bandwidth 2.4 5.2 μV p-p

1

AD8510/AD8512 only.

Rev. I | Page 5 of 20

AD8510/AD8512/AD8513

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter Rating

Supply Voltage ±18 V
Input Voltage ±VS
Output Short-Circuit Duration to GND Observe derating curves
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +125°C
Junction Temperature Range −65°C to +150°C
Lead Temperature (Soldering, 10 sec) 300°C
Electrostatic Discharge

(Human Body Model)

2000 V

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

Table 4. Thermal Resistance

Package Type θ

8-Lead MSOP (RM) 210 45 °C/W
8-Lead SOIC_N (R) 158 43 °C/W
14-Lead SOIC_N (R) 120 36 °C/W
14-Lead TSSOP (RU) 180 35 °C/W

1

θJA is specified for worst-case conditions, that is, θJA is specified for device

soldered in circuit board for surface-mount packages.

1

θ

JA

Unit

JC

ESD CAUTION

Rev. I | Page 6 of 20