Precision, Very Low Noise, Low Input Bias Current,
A
A
A
O
A
Wide Bandwidth JFET Operational Amplifiers
FEATURES
Fast settling time: 500 ns to 0.1%
Low offset voltage: 400 µV max
Low T
Low input bias current: 25 pA typ
Dual-supply operation: ±5 V to ±15 V
Low noise: 8 nV/√Hz
Low distortion: 0.0005%
No phase reversal
Unity gain stable
APPLICATIONS
Instrumentation
Multipole filters
Precision current measurement
Photodiode amplifiers
Sensors
Audio
GENERAL DESCRIPTION
The AD8510, AD8512, AD8513 are single-, dual-, and quadprecision JFET amplifiers that feature low offset voltage, input
bias current, input voltage noise, and input current noise.
The combination of low offsets, low noise, and very low input
bias currents makes these amplifiers especially suitable for high
impedance sensor amplification and precise current measurements using shunts. The combination of dc precision, low noise,
and fast settling time results in superior accuracy in medical
instruments, electronic measurement, and automated test
equipment. Unlike many competitive amplifiers, the AD8510/
AD8512/AD8513 maintain their fast settling performance even
with substantial capacitive loads. Unlike many older JFET
amplifiers, the AD8510/AD8512/ AD8513 do not suffer from
output phase reversal when input voltages exceed the maximum
common-mode voltage range.
Fast slew rate and great stability with capacitive loads make the
AD8510/AD8512/AD8513 a perfect fit for high performance
filters. Low input bias currents, low offset, and low noise result
in a wide dynamic range of photodiode amplifier circuits. Low
noise and distortion, high output current, and excellent speed
make the AD8510/AD8512/AD8513 a great choice for audio
applications.
The AD8510/AD8512 are both available in 8-lead narrow SOIC
and 8-lead MSOP packages. MSOP packaged parts are only
available in tape and reel. The AD8513 is available in 14-lead
SOIC and TSSOP packages.
The AD8510/AD8512/AD8513 are specified over the –40°C to
+125°C extended industrial temperature range.
02729-D-002
02729-D-006
Rev. E
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
Changes to General Application Information Section .............. 10
Changes to Figure 5........................................................................ 11
Changes to I-V Conversion Applications Section...................... 13
Changes to Figures 13 and 14....................................................... 13
Changes to Figure 17...................................................................... 14
Rev. E | Page 2 of 20
AD8510/AD8512/AD8513
SPECIFICATIONS
@ VS = ±5 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage (B Grade)1 V
OS
−40°C < TA < +125°C 0.8 mV
Offset Voltage (A Grade) V
OS
−40°C < TA < +125°C 1.8 mV
Input Bias Current I
B
−40°C < TA < +85°C 0.7 nA
−40°C < TA < +125°C 7.5 nA
Input Offset Current I
OS
−40°C < TA < +85°C 0.3 nA
−40°C < TA < +125°C 0.5 nA
Input Capacitance
Differential 12.5 pF
Common-Mode 11.5 pF
Input Voltage Range −2.0 +2.5 V
Common-Mode Rejection Ratio CMRR VCM = −2.0 V to +2.5 V 86 100 dB
Large Signal Voltage Gain A
VO
Offset Voltage Drift (B Grade)1 ∆VOS/∆T 0.9 5 µV/°C
Offset Voltage Drift (A Grade) ∆VOS/∆T 1.7 12 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 10 kΩ +4.1 +4.3 V
Output Voltage Low VOL −40°C < TA < +125°C −4.9 −4.7 V
Output Voltage High VOH RL = 2 kΩ, +3.9 + 4.2 V
Output Voltage Low VOL −40°C < TA < +125°C −4.9 −4.5 V
Output Voltage High VOH RL = 600 Ω +3.7 +4.1 V
Output Voltage Low VOL −40°C < TA < +125°C −4.8 −4.2 V
Output Current I
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 130 dB
Supply Current/Amplifier I
SY
AD8510/AD8512/AD8513 VO = 0 V 2.0 2.3 mA
AD8510/AD8512 −40°C < TA < +125°C 2.5 mA
AD8513 −40°C < TA < +125°C 2.75 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 20 V/µs
Gain Bandwidth Product GBP 8 MHz
Settling Time tS To 0.1%, 0 V to 4 V Step, G = +1 0.4 µs
THD + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 %
Phase Margin Φ
O
NOISE PERFORMANCE
Voltage Noise Density en f = 10 Hz 34 nV/√Hz
f = 100 Hz 12 nV/√Hz
f = 1 kHz 8.0 10 nV/√Hz
f = 10 kHz 7.6 nV/√Hz
Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz Bandwidth 2.4 5.2 µV p-p
1
AD8510/AD8512 only.
0.08 0.4 mV
0.1 0.9 mV
21 75 pA
5 50 pA
RL = 2 kΩ, VO = −3 V to +3 V 65 107 V/mV
± 40 ± 54 mA
44.5 Degrees
Rev. E | Page 3 of 20
AD8510/AD8512/AD8513
ELECTRICAL CHARACTERISTICS
@ VS = ±15 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage (B Grade)1 VOS 0.08 0.4 mV
−40°C < TA < +125°C 0.8 mV
Offset Voltage (A Grade) VOS 0.1 1.0 mV
−40°C < TA < +125°C 1.8 mV
Input Bias Current IB 25 80 pA
−40°C < TA < +85°C 0.7 nA
−40°C < TA < +125°C 10 nA
Input Offset Current I
OS
−40°C < TA < +85°C 0.3 nA
−40°C < TA < +125°C 0.5 nA
Input Capacitance
Differential 12.5 pF
Common-Mode 11.5 pF
Input Voltage Range −13.5 +13.0 V
Common-Mode Rejection Ratio CMRR VCM = −12.5 V to +12.5 V 86 108 dB
Large Signal Voltage Gain AVO VO = −13.5 V to +13.5 V 115 196 V/mV
R
Offset Voltage Drift (B Grade)1 ∆VOS/∆T 1.0 5 µV/°C
Offset Voltage Drift (A Grade) ∆VOS/∆T 1.7 12 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 10 kΩ +14.0 +14.2 V
Output Voltage Low VOL −40°C < TA < +125°C −14.9 −14.6 V
Output Voltage High VOH RL = 2 kΩ +13.8 +14.1 V
Output Voltage Low VOL −40°C < TA < +125°C –14.8 −14.5 V
Output Voltage High VOH RL = 600 Ω, TA = 25°C +13.5 +13.9 V
−40°C < TA < +125°C 11.4 V
Output Voltage Low VOL RL = 600 Ω, TA = 25°C −14.3 −13.8 V
−40°C < TA < +125°C −12.1 V
Output Current I
±70 mA
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 dB
Supply Current/Amplifier ISY
AD8510/AD8512/AD8513 VO = 0 V 2.2 2.5 mA
AD8510/AD8512 −40°C < TA < +125°C 2.6 mA
AD8513 −40°C < TA < +125°C 3.0 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 20 V/µs
Gain Bandwidth Product GBP 8 MHz
Settling Time t
Voltage Noise Density en f = 10 Hz 34 nV/√Hz
f = 100 Hz 12 nV/√Hz
f = 1 kHz 8.0 10 nV/√Hz
f = 10 kHz 7.6 nV/√Hz
Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz Bandwidth 2.4 5.2 µV p-p
1
AD8510/AD8512 only.
Rev. E | Page 5 of 20
AD8510/AD8512/AD8513
ABSOLUTE MAXIMUM RATINGS
Table 3. AD8510/AD8512/AD8513 Stress Ratings
Parameter Rating
Supply Voltage ±18 V
Input Voltage ±V
Output Short-Circuit Duration to GND
Observe Derating
Curves
Storage Temperature Range
R, RM Packages −65°C to +150°C
Operating Temperature Range −40°C to +125°C
Junction Temperature Range
R, RM Packages −65°C to +150°C
Lead Temperature Range
300°C
(Soldering, 10 sec)
Electrostatic Discharge (HBM) 2000 V
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
this product features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional
operation of the device at these or any other conditions above those listed in
the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device
reliability.
2
θJA is specified for worst-case conditions, i.e., θJA is specified for device
soldered in circuit board for surface-mount packages.
2
JA
θ
Unit
JC
Rev. E | Page 6 of 20
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