Analog Devices AD8510 2 3 e Datasheet

Precision, Very Low Noise, Low Input Bias Current,
A
A
A
O
A
Wide Bandwidth JFET Operational Amplifiers

FEATURES

Fast settling time: 500 ns to 0.1% Low offset voltage: 400 µV max Low T Low input bias current: 25 pA typ Dual-supply operation: ±5 V to ±15 V Low noise: 8 nV/√Hz Low distortion: 0.0005% No phase reversal Unity gain stable

APPLICATIONS

Instrumentation Multipole filters Precision current measurement Photodiode amplifiers Sensors Audio

GENERAL DESCRIPTION

The AD8510, AD8512, AD8513 are single-, dual-, and quad­precision JFET amplifiers that feature low offset voltage, input bias current, input voltage noise, and input current noise.
The combination of low offsets, low noise, and very low input bias currents makes these amplifiers especially suitable for high impedance sensor amplification and precise current measure­ments using shunts. The combination of dc precision, low noise, and fast settling time results in superior accuracy in medical instruments, electronic measurement, and automated test equipment. Unlike many competitive amplifiers, the AD8510/ AD8512/AD8513 maintain their fast settling performance even with substantial capacitive loads. Unlike many older JFET amplifiers, the AD8510/AD8512/ AD8513 do not suffer from output phase reversal when input voltages exceed the maximum common-mode voltage range.
: 1 µV/°C typ
CVOS
AD8510/AD8512/AD8513

PIN CONFIGURATIONS

8
V+ OUT B –IN B +IN B
5
NC V+ OUT NC
14
OUT D –IN D
13
+IN D
12
V–
11
+IN C
10
–IN C
9
OUT C
8
02729-D-001
02729-D-003
02729-D-005
OUT
–IN A +IN A
NC –IN
+IN
V–
OUT
–IN A +IN A
+IN B –IN B
OUT B
V–
V+
AD8512
TOP VIEW
(Not to Scale)
AD8510
TOP VIEW
(Not to Scale)
1
AD8513
TOP VIEW
(Not to Scale)
7
V+ OUT B –IN B +IN B
NC V+ OUT NC
02729-D-004
14
OUT D –IN D +IN D V– +IN C –IN C OUT C
8
–IN A +IN A
V–
1
AD8512
TOP VIEW
(Not to Scale) 4
OUT
Figure 1. 8-Lead MSOP (RM Suffix) Figure 2. 8-Lead SOIC (R Suffix)
NC
AD8510
–IN
TOP VIEW
+IN
(Not to Scale)
V–
Figure 3. 8-Lead MSOP (RM Suffix) Figure 4. 8-Lead SOIC (R Suffix)
1
OUT
–IN A
2
+IN A
3
AD8513
V+
4
TOP VIEW
(Not to Scale)
+IN B
5
–IN B
6
UT B
7
Figure 5. 14-Lead SOIC (R Suffix) Figure 6. 14-Lead TSSOP (RU Suffix)
Fast slew rate and great stability with capacitive loads make the AD8510/AD8512/AD8513 a perfect fit for high performance filters. Low input bias currents, low offset, and low noise result in a wide dynamic range of photodiode amplifier circuits. Low noise and distortion, high output current, and excellent speed make the AD8510/AD8512/AD8513 a great choice for audio applications.
The AD8510/AD8512 are both available in 8-lead narrow SOIC and 8-lead MSOP packages. MSOP packaged parts are only available in tape and reel. The AD8513 is available in 14-lead SOIC and TSSOP packages.
The AD8510/AD8512/AD8513 are specified over the –40°C to +125°C extended industrial temperature range.
02729-D-002
02729-D-006
Rev. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
www.analog.com
AD8510/AD8512/AD8513

TABLE OF CONTENTS

Specifications............................................................................................3
Total Noise Including Source Resistors................................... 13
Electrical Characteristics............................................................. 4
Absolute Maximum Ratings .................................................................. 6
ESD Caution.................................................................................. 6
Typical Performance Characteristics ....................................................7
General Application Information........................................................13
Input Overvoltage Protection................................................... 13
Output Phase Reversal............................................................... 13
THD + Noise............................................................................... 13
REVISION HISTORY
6/04—Data Sheet Changed from Rev. D to Rev. E
Changes to Format.............................................................Universal
Changes to Specifications................................................................ 3
Updated Outline Dimensions....................................................... 19
10/03—Data Sheet Changed from Rev. C to Rev. D
Added AD8513 Model ......................................................Universal
Changes to Specifications................................................................ 3
Added Figures 36 through 40........................................................ 10
Added new Figures 55 and 57....................................................... 17
Changes to Ordering Guide.......................................................... 20
9/03—Data Sheet Changed from Rev. B to Rev. C
Changes to Ordering Guide ........................................................... 4
Updated Figure 2 ............................................................................ 10
Changes to Input Overvoltage Protection section .................... 10
Changes to Figures 10 and 11 ....................................................... 12
Changes to Photodiode Circuits section ..................................... 13
Changes to Figures 13 and 14 ....................................................... 13
Deleted Precision Current Monitoring section .......................... 14
Updated Outline Dimensions ...................................................... 15
Settling Time............................................................................... 14
Overload Recovery Time .......................................................... 14
Capacitive Load Drive ............................................................... 14
Open-Loop Gain and Phase Response.................................... 15
Precision Rectifiers..................................................................... 16
I-V Conversion Applications.................................................... 17
Outline Dimensions ..............................................................................19
Ordering Guide .......................................................................... 20
3/03—Data Sheet Changed from Rev. A to Rev. B
Updated Figure 5............................................................................ 11
Updated Outline Dimensions....................................................... 15
8/02—Data Sheet Changed from Rev. 0 to Rev. A
Added AD8510 Model .......................................................Universal
Added Pin Configurations ...............................................................1
Changes to Specifications.................................................................2
Changes to Ordering Guide.............................................................4
Changes to TPCs 2 and 3..................................................................5
Added new TPCs 10 and 12.............................................................6
Replaced TPC 20 ...............................................................................8
Replaced TPC 27 ...............................................................................9
Changes to General Application Information Section .............. 10
Changes to Figure 5........................................................................ 11
Changes to I-V Conversion Applications Section...................... 13
Changes to Figures 13 and 14....................................................... 13
Changes to Figure 17...................................................................... 14
Rev. E | Page 2 of 20
AD8510/AD8512/AD8513

SPECIFICATIONS

@ VS = ±5 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage (B Grade)1 V
OS
−40°C < TA < +125°C 0.8 mV Offset Voltage (A Grade) V
OS
−40°C < TA < +125°C 1.8 mV Input Bias Current I
B
−40°C < TA < +85°C 0.7 nA
−40°C < TA < +125°C 7.5 nA Input Offset Current I
OS
−40°C < TA < +85°C 0.3 nA
−40°C < TA < +125°C 0.5 nA Input Capacitance
Differential 12.5 pF
Common-Mode 11.5 pF Input Voltage Range −2.0 +2.5 V Common-Mode Rejection Ratio CMRR VCM = −2.0 V to +2.5 V 86 100 dB Large Signal Voltage Gain A
VO
Offset Voltage Drift (B Grade)1 ∆VOS/∆T 0.9 5 µV/°C Offset Voltage Drift (A Grade) ∆VOS/∆T 1.7 12 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 10 kΩ +4.1 +4.3 V Output Voltage Low VOL −40°C < TA < +125°C −4.9 −4.7 V Output Voltage High VOH RL = 2 kΩ, +3.9 + 4.2 V Output Voltage Low VOL −40°C < TA < +125°C −4.9 −4.5 V Output Voltage High VOH RL = 600 Ω +3.7 +4.1 V Output Voltage Low VOL −40°C < TA < +125°C −4.8 −4.2 V Output Current I
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 130 dB Supply Current/Amplifier I
SY
AD8510/AD8512/AD8513 VO = 0 V 2.0 2.3 mA
AD8510/AD8512 −40°C < TA < +125°C 2.5 mA
AD8513 −40°C < TA < +125°C 2.75 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 20 V/µs Gain Bandwidth Product GBP 8 MHz Settling Time tS To 0.1%, 0 V to 4 V Step, G = +1 0.4 µs THD + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 % Phase Margin Φ
O
NOISE PERFORMANCE
Voltage Noise Density en f = 10 Hz 34 nV/√Hz
f = 100 Hz 12 nV/√Hz f = 1 kHz 8.0 10 nV/√Hz f = 10 kHz 7.6 nV/√Hz
Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz Bandwidth 2.4 5.2 µV p-p
1
AD8510/AD8512 only.
0.08 0.4 mV
0.1 0.9 mV
21 75 pA
5 50 pA
RL = 2 kΩ, VO = −3 V to +3 V 65 107 V/mV
± 40 ± 54 mA
44.5 Degrees
Rev. E | Page 3 of 20
AD8510/AD8512/AD8513

ELECTRICAL CHARACTERISTICS

@ VS = ±15 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage (B Grade)1 VOS 0.08 0.4 mV
−40°C < TA < +125°C 0.8 mV
Offset Voltage (A Grade) VOS 0.1 1.0 mV
−40°C < TA < +125°C 1.8 mV Input Bias Current IB 25 80 pA
−40°C < TA < +85°C 0.7 nA
−40°C < TA < +125°C 10 nA Input Offset Current I
OS
−40°C < TA < +85°C 0.3 nA
−40°C < TA < +125°C 0.5 nA Input Capacitance
Differential 12.5 pF
Common-Mode 11.5 pF Input Voltage Range −13.5 +13.0 V Common-Mode Rejection Ratio CMRR VCM = −12.5 V to +12.5 V 86 108 dB Large Signal Voltage Gain AVO VO = −13.5 V to +13.5 V 115 196 V/mV
R
Offset Voltage Drift (B Grade)1 ∆VOS/∆T 1.0 5 µV/°C Offset Voltage Drift (A Grade) ∆VOS/∆T 1.7 12 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH RL = 10 kΩ +14.0 +14.2 V Output Voltage Low VOL −40°C < TA < +125°C −14.9 −14.6 V Output Voltage High VOH RL = 2 kΩ +13.8 +14.1 V Output Voltage Low VOL −40°C < TA < +125°C –14.8 −14.5 V Output Voltage High VOH RL = 600 Ω, TA = 25°C +13.5 +13.9 V
−40°C < TA < +125°C 11.4 V Output Voltage Low VOL RL = 600 Ω, TA = 25°C −14.3 −13.8 V
−40°C < TA < +125°C −12.1 V Output Current I
±70 mA
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 86 dB Supply Current/Amplifier ISY
AD8510/AD8512/AD8513 VO = 0 V 2.2 2.5 mA AD8510/AD8512 −40°C < TA < +125°C 2.6 mA AD8513 −40°C < TA < +125°C 3.0 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 2 kΩ 20 V/µs Gain Bandwidth Product GBP 8 MHz Settling Time t
S
To 0.01%, 0 V to 10 V Step, G = +1 0.9 µs
THD + Noise THD + N 1 kHz, G = +1, RL = 2 kΩ 0.0005 % Phase Margin ΦO 52 Degrees
6 75 pA
= 2 kΩ, VCM = 0 V
L
To 0.1%, 0 V to 10 V Step, G = +1 0.5 µs
Rev. E | Page 4 of 20
AD8510/AD8512/AD8513
Parameter Symbol Conditions Min Typ Max Unit
NOISE PERFORMANCE
Voltage Noise Density en f = 10 Hz 34 nV/√Hz f = 100 Hz 12 nV/√Hz f = 1 kHz 8.0 10 nV/√Hz f = 10 kHz 7.6 nV/√Hz
Peak-to-Peak Voltage Noise en p-p 0.1 Hz to 10 Hz Bandwidth 2.4 5.2 µV p-p
1
AD8510/AD8512 only.
Rev. E | Page 5 of 20
AD8510/AD8512/AD8513

ABSOLUTE MAXIMUM RATINGS

Table 3. AD8510/AD8512/AD8513 Stress Ratings
Parameter Rating
Supply Voltage ±18 V Input Voltage ±V Output Short-Circuit Duration to GND
Observe Derating Curves
Storage Temperature Range
R, RM Packages −65°C to +150°C Operating Temperature Range −40°C to +125°C Junction Temperature Range R, RM Packages −65°C to +150°C Lead Temperature Range
300°C
(Soldering, 10 sec) Electrostatic Discharge (HBM) 2000 V

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
1
Table 4. Thermal Resistance
Package Type θ
8-Lead MSOP (RM) 210 45 °C/W
S
8-Lead SOIC (R) 158 43 °C/W 14-Lead SOIC (R) 120 36 °C/W 14-Lead TSSOP (RU) 180 35 °C/W
1
Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
θJA is specified for worst-case conditions, i.e., θJA is specified for device
soldered in circuit board for surface-mount packages.
2
JA
θ
Unit
JC
Rev. E | Page 6 of 20
Loading...
+ 14 hidden pages