Analog Devices AD8174AR-REEL, AD8174AR, AD8174AN, AD8170AR-REEL, AD8170AR Datasheet

a

1
2
3
4

8
7
6
5

AD8170

+1 +1

LOGIC

V

OUT

–V

IN

+V

S

IN1

SELECT

GND

–V

S

IN0

10

9
8

+1

AD8174

+1

+1

+1

2

2

14

13
12

11

1

2
3
4

5
6

7

LOGIC

+V

S

V

OUT

–V

IN

SD

ENABLE

A1
A0

IN0

GND

IN1

GND

IN2

–V

S

IN3

250 MHz, 10 ns Switching

Multiplexers w/Amplifier

AD8170/AD8174

FEATURES
Fully Buffered Inputs and Outputs
Fast Channel Switching: 10 ns
Internal Current Feedback Output Amplifier

High Output Drive: 50 mA
Flexible Gain Setting via External Resistor(s)

High Speed

250 MHz Bandwidth, G = +2
1000 V/ms Slew Rate

Fast Settling Time of 15 ns to 0.1%
Low Power: < 10 mA
Excellent Video Specifications (R

= 150 V, G = +2)

L

Gain Flatness of 0.1 dB Beyond 80 MHz

0.02% Differential Gain Error

0.058 Differential Phase Error
Low Crosstalk of –78 dB @ 5 MHz
High Disable Isolation of –88 dB @ 5 MHz
High Shutdown Isolation of –92 dB @ 5 MHz
Low Cost
Fast Output Disable Feature for Connecting Multiple

Devices (AD8174 Only)

Shutdown Feature Reduces Power to 1.5 mA (AD8174 Only)
APPLICATIONS

Pixel Switching for “Picture-In-Picture”
LCD and Plasma Displays
Video Routers

PRODUCT DESCRIPTION

The AD8170(2:1) and AD8174(4:1) are very high speed
buffered multiplexers. These multiplexers offer an internal
current feedback output amplifier whose gain can be pro­grammed via external resistors and is capable of delivering 50
mA of output current. They offer –3 dB signal bandwidth of
250 MHz and slew rate of greater than 1000 V/µs. Additionally,
the AD8170 and AD8174 have excellent video specifications
with low differential gain and differential phase error of 0.02%
and 0.05° and 0.1 dB flatness out to 80 MHz. With a low 78
dB of crosstalk and better than 88 dB isolation, these devices are
useful in many high speed applications. These are low power
devices consuming only 9.7 mA from a ± 5 V supply.

FUNCTIONAL BLOCK DIAGRAM

The AD8174 offers a high speed disable feature allowing the
output to be put into a high impedance state for cascading
stages so that the off channels do not load the output bus.
Additionally, the AD8174 can be shut down (SD) when not in
use to minimize power consumption (I

= 1.5 mA). These

S

products will be offered in 8-lead and 14-lead PDIP and SOIC
packages.

VIN = 50mV rms
G = +2

= 499Ω (AD8170R)

R

F

= 549Ω (AD8174R)

R

F

0.1

= 100Ω

R

L

0

–0.1

–0.2

–0.3

–0.4

NORMALIZED FLATNESS – dB

–0.5

1M 10M 100M 1G

FREQUENCY – Hz

0

–1

–2

–3

–4

–5

–6

–7

NORMALIZED OUTPUT – dB

–8

–9

Figure 1. Small Signal Frequency Response

REV. 0

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1996

(@ TA = +258C, VS = 65 V, RL = 150 V, G = +2, RF = 499 V

AD8170/AD8174–SPECIFICATIONS

Parameter Conditions Min Typ Max Units

SWITCHING CHARACTERISTICS

Switching Time

1

50% Logic to 10% Output Settling IN0, IN2 = +0.5 V; IN1, IN3 = –0.5 V 7.5 ns
50% Logic to 90% Output Settling IN0, IN2 = +0.5 V; IN1, IN3 = –0.5 V 9.1 ns
50% Logic to 99.9% Output Settling IN0, IN2 = +0.5 V; IN1, IN3 = –0.5 V 25 ns
ENABLE to Channel ON Time2 (AD8174R)

50% Logic to 90% Output Settling IN0, IN2 = +0.5 V; IN1, IN3 = –0.5 V 17 ns
ENABLE to Channel OFF Time2 (AD8174R)

50% Logic to 90% Output Settling IN0, IN2 = +0.5 V; IN1, IN3 = –0.5 V 120 ns
Shutdown to Channel ON Time

50% Logic to 90% Output Settling IN0, IN2 = +0.5 V; IN1, IN3 = –0.5 V 20 ns
Shutdown to Channel OFF Time

50% Logic to 90% Output Settling IN0, IN2 = +0.5 V; IN1, IN3 = –0.5 V 115 ns
Channel Switching Transient (Glitch)

3

(AD8174R)

3

(AD8174R)

4

DIGITAL INPUTS

Logic “1” Voltage SELECT, A0, A1,
Logic “0” Voltage SELECT, A0, A1,
Logic “1” Input Current SELECT, A0, A1 Inputs, T

Logic “0” Input Current SELECT, A0, A1 Inputs, T

DYNAMIC PERFORMANCE

–3 dB Bandwidth (Small Signal)
–3 dB Bandwidth (Large Signal)

0.1 dB Bandwidth

5

5
5

Rise and Fall Time (10% to 90%) 2 V Step 1.6 ns
Slew Rate 2 V Step 1000 V/µs
Settling Time to 0.1% 2 V Step 15 ns

DISTORTION/NOISE PERFORMANCE

Differential Gain ƒ = 3.58 MHz 0.02 %
Differential Phase ƒ = 3.58 MHz 0.05
All Hostile Crosstalk

All Hostile Crosstalk

Disable Isolation

Shutdown Isolation

6

6

7

8

AD8170R ƒ = 5 MHz, RL = 100 Ω –80 dB

AD8174R ƒ = 5 MHz, RL = 100 Ω –78 dB

AD8174R ƒ = 5 MHz, RL = 100 Ω –88 dB

AD8174R ƒ = 5 MHz, RL = 100 Ω –92 dB

Input Voltage Noise ƒ = 10 kHz to 30 MHz 10 nV/√
+Input Current Noise ƒ = 10 kHz to 30 MHz 1.6 pA/√
–Input Current Noise ƒ = 10 kHz to 30 MHz 8.5 pA/√
Total Harmonic Distortion ƒ

DC/TRANSFER CHARACTERISTICS

Transresistance 400 600 kΩ
Open-Loop Voltage Gain 2000 6000 V/V
Gain Accuracy

9

Gain Matching Channel-to-Channel 0.05 %
Input Offset Voltage 59mV

Input Offset Voltage Matching Channel-to-Channel 1.5 5 mV
Input Offset Voltage Drift 11 µV/°C
Input Bias Current (+) Switch Input 7 15 µA

Input Bias Current Drift (+) Switch and (–) Buffer Input 20 nA/°C

AD8170A/AD8174A

Channel-to-Channel

All Inputs Grounded 138 /104 mV p-p

ENABLE, SD Inputs, T

ENABLE, SD Inputs, T

VO = 50 mV rms, RL = 100 Ω 250 MHz
VO = 1 V rms, RL = 100 Ω 100 MHz
VO = 50 mV rms, RF = 499 Ω (AD8170R), RL = 100 Ω

= 50 mV rms, RF = 549 Ω (AD8174R), RL = 100 Ω 85 MHz

V

O

ƒ = 30 MHz, R

ƒ = 30 MHz, R

ƒ = 30 MHz, R

ƒ = 30 MHz, R

= 10 MHz, VO = 2 V p-p, RL = 150 Ω –60 dBc

C

= 100 Ω –65 dB

L

= 100 Ω –63 dB

L

= 100 Ω –72 dB

L

= 100 Ω –77 dB

L

ƒC = 10 MHz, VO = 2 V p-p, RL = 1 kΩ –72 dBc

G = +1, RF = 1 kΩ 0.4 %

to T

T

MIN

T

MIN

to T

MAX

MAX

(–) Buffer Input 3 10 µA

to T

T

MIN

MAX

(AD8170R), RF = 549 V (AD8174R) unless otherwise noted)

ENABLE, SD Inputs, T

ENABLE, SD Inputs, T

MIN–TMAX

MIN–TMAX

MIN–TMAX

MIN–TMAX

MIN–TMAX

MIN–TMAX

2.0 V

50 300 nA
15µA
35µA
30 300 nA

0.8 V

Degrees

Hz
Hz
Hz

12 mV

15 µA
14 µA

–2–

REV. 0

AD8170/AD8174

AD8170A/AD8174A

Parameter Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Input Resistance (+) Switch Input 1.7 MΩ

Input Capacitance Channel Enabled (R Package) 1.1 pF
Input Voltage Range ±3.3 V

Input Common-Mode Rejection Ratio +CMRR, ∆V

OUTPUT CHARACTERISTICS

Output Voltage Swing R

Output Current R
Short Circuit Current 180 mA
Output Resistance Enabled 10 mΩ

Output Capacitance Disabled (AD8174) 7.5 pF

POWER SUPPLY

Operating Range ±4 ±6V
Power Supply Rejection Ratio +PSRR +V

Power Supply Rejection Ratio –PSRR –V

Quiescent Current All Channels “ON”, T

OPERATING TEMPERATURE RANGE –40 +85 °C

NOTES

1

Shutdown (SD) and ENABLE pins are grounded (AD8174). IN0 (or IN2) = +0.5 V dc, IN1 (or IN3) = –0.5 V dc. SELECT (A0 or A1 for AD8174) input is

driven with 0 V to +5 V pulse. Measure transition time from 50% of SELECT (A0 or A1) input value (+2.5 V) and 10% (or 90%) of the total output voltage transi­tion from IN0 (or IN2) channel voltage (+0.5 V) to IN1 (or IN3 = –0.5 V) or vice versa.

2

AD8174 only. Shutdown (SD) pin is grounded. ENABLE pin is driven with 0 V to +5 V pulse (5 ns rise and fall times). State of A0 and A1 logic inputs determines

which channel is activated (i.e., if A0 = Logic 0 and A1 = Logic 1, then IN2 input is selected). Set IN0 (or IN2) = +0.5 V dc, IN1 (or IN3) = –0.5 V dc, and mea­sure transition time from 50% of ENABLE pulse (+2.5 V) to 90% of the total output voltage change. In Figure 5, ∆t

3

AD8174 only. ENABLE pin is grounded. Shutdown (SD) pin is driven with 0 V to +5 V pulse (5 ns rise and fall times). State of A0 and A1 logic inputs determines
which channel is activated (i.e., if A0 = Logic 1 and A1 = Logic O, then IN1 input is selected). Set IN0 (or IN2) = +0.5 V dc, IN1 (or IN3) = –0.5 V dc, and mea­sure transition time from 50% of SD pulse (+2.5 V) to 90% of the total output voltage change. In Figure 6, ∆ t
release time.

4

All inputs are grounded. SELECT (A0 or A1 for AD8174) input is driven with 0 V to +5 V pulse. The outputs are monitored. Speeding the edges of the SELECT
(A0 or A1) pulse increases the glitch magnitude due to coupling via the ground plane.

5

Bandwidth of the multiplexer is dependent upon the resistor feedback network. Refer to Table III for recommended feedback component values, which give the best
compromise between a wide and a flat frequency response.

6

Select input(s) that is (are) not being driven (i.e., if SELECT is Logic 1, activated input is IN1; in AD8174, if A0 = Logic 0, A1 = Logic 1, activated input is IN2).
Drive all other inputs with VIN = 0.707 V rms, and monitor output at f = 5 MHz and 30 MHz; RL = 100 Ω (see Figure 13).

7

AD8174 only. Shutdown (SD) pin is grounded. Mux is disabled, (i.e., ENABLE = Logic 1) and all inputs are driven simultaneously with VIN = 0.354 V rms. Out­put is monitored at f = 5 MHz and 30 MHz; RL = 100 Ω. In this mode, the output impedance of the disabled mux is very high (typ 10 MΩ), and the signal couples
across the package; the load impedance and the feedback network determine the crosstalk. For instance, in a closed-loop gain of +1, r
(RF = RG = 549 Ω), r

8

AD8174 only. ENABLE pin is grounded. Mux is shutdown (i.e., SD = Logic 1), and all inputs are driven simultaneously with VIN = 0.354 V rms. Output is moni­tored at f = 5 MHz and 30 MHz; RL = 100 Ω. (see Figure 14). The mux output impedance in shutdown mode is the same as the disabled mux output impedance.

9

For Gain Accuracy expression, refer to Equation 4.

Specifications subject to change without notice.

= 1.1 kΩ (see Figure 14).

OUT

(–) Buffer Input 100 Ω

Channel Disabled (R Package) 1.1 pF

= 1 V 51 56 dB

CM

–CMRR, ∆VCM = 1 V 50 52 dB

= 1 kΩ, T

L

= 150 Ω, T

R

L

= 10 Ω 50 mA

L

MIN–TMAX

MIN–TMAX

±4.0 ±4.26 V
±3.5 ±4.0 V

Disabled (AD8174) 10 MΩ

= +4.5 V to +5.5 V, –VS = –5 V 58 66 dB

S

T

MIN–TMAX

= –4.5 V to –5.5 V, +VS= +5 V 52 58 dB

S

T

MIN–TMAX

AD8174 Disabled, T
AD8174 Shutdown, T

MIN–TMAX

MIN–TMAX

MIN–TMAX

55 dB

50 dB

8.7/9.7 11/13 mA

4.1 5 mA

1.5 2.5 mA

is the disable time, ∆tON is the enable time.

OFF

is the shutdown assert time, ∆t

OFF

ù 10 MΩ, in a gain of +2

OUT

is the shutdown

ON

REV. 0

Table I. AD8170 Truth Table

SELECT V

0 IN0
1 IN1

OUT

Table II. AD8174 Truth Table

A0 A1 ENABLE SD V

OUT

0 0 0 0 IN0
1 0 0 0 IN1
0 1 0 0 IN2
1 1 0 0 IN3
X X 1 0 HIGH Z, I

= 4.1 mA

S

X X X 1 HIGH Z, IS = 1.5 mA

–3–

AD8170/AD8174

WARNING!

ESD SENSITIVE DEVICE

MAXIMUM POWER DISSIPATION – Watts

AMBIENT TEMPERATURE – °C

2.0

1.5

0

–50 90–40 –30 –20 –10 0 10 20 30 50 60 70 8040

1.0

0.5

8-PIN MINI-DIP PACKAGE

8-PIN SOIC PACKAGE

TJ = +150°C

AMBIENT TEMPERATURE – °C

2.5

2.0

0.5
–50 90–40

MAXIMUM POWER DISSIPATION – Watts

–30 –20 –10 0 10 20 30 40 50 60 80

1.5

1.0

70

14-PIN SOIC

14-PIN DIP PACKAGE

TJ = +150°C

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V

Internal Power Dissipation

2

1

AD8170 8-Lead Plastic (N) . . . . . . . . . . . . . . . . . 1.3 Watts

AD8170 8-Lead Small Outline (R) . . . . . . . . . . . 0.9 Watts

AD8174 14-Lead Plastic (N) . . . . . . . . . . . . . . . . 1.6 Watts

AD8174 14-Lead Small Outline (R) . . . . . . . . . . 1.0 Watts

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V

S

Output Short Circuit Duration . . Observe Power Derating Curves
Storage Temperature Range

N & R Packages . . . . . . . . . . . . . . . . . . . . –65°C to +125°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . .+300°C

NOTES

1

Stresses above those listed under “Absolute Maximum Ratings” may cause

permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.

2

Specification is for device in free air: 8-Pin Plastic Package: θJA = 90°C/Watt;

8-Pin SOIC Package: θJA = 160°C/Watt; 14-Pin Plastic Package: θJA = 90°C/Watt
14-Pin SOIC Package: θJA = 120°C/Watt, where PD = (TJ–TA)/θJA.

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

AD8170AN –40°C to +85°C 8-Pin Plastic DIP N-8
AD8170AR –40°C to +85°C 8-Pin SOIC SO-8
AD8170AR-REEL –40°C to +85°C Reel 8-Pin SOIC SO-8
AD8174AN –40°C to +85°C 14-Pin Plastic DIP N-14
AD8174AR –40°C to +85°C 14-Pin Narrow SOIC R-14
AD8174AR-REEL –40°C to +85°C Reel 14-Pin SOIC R-14
AD8170-EB Evaluation Board For AD8170R
AD8174-EB Evaluation Board For AD8174R

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the
AD8170 and AD8174 is limited by the associated rise in
junction temperature. The maximum safe junction temperature
for plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately +150°C.
Exceeding this limit temporarily may cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of +175°C
for an extended period can result in device failure.

While the AD8170 and AD8174 are internally short circuit
protected, this may not be sufficient to guarantee that the maxi­mum junction temperature (+150°C) is not exceeded under all
conditions. To ensure proper operation, it is necessary to observe
the maximum power derating curves shown in Figures 2 and 3.

Figure 2. AD8170 Maximum Power Dissipation vs.
Temperature

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8170/AD8174 feature proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

Figure 3. AD8174 Maximum Power Dissipation vs.
Temperature

precautions are recommended to avoid performance degradation or loss of functionality.

–4–

REV. 0

Typical Performance Characteristics – AD8170/AD8174

∆t

RISE

IN0, IN2 =
+0.5V
IN1, IN3 =
+0.5V

5ns/DIV

= 7.5ns

G = +2
R
R

= RG = 499V

F

= 100V

L

SELECT

PULSE

0 TO +5V

DUT
OUT

500mV/DIV

∆t

= 9.1ns

FALL

OUTPUT

Figure 4. Channel Switching Characteristics

AD8174R

OUTPUT

200mV/DIV

∆tON = 17ns

∆t

ENABLE PULSE

50ns/DIV

INØ = +0.5VDC
G = +2

= 549V

R

F

R

= 100V

L

= 120ns

OFF

0 TO +5V

(5nsec EDGES)

OUTPUT (AD8170R)

OUTPUT
(AD8174R)

50mV/DIV

G = +2

= 499V

R

F

(AD8170R)

SEL SWITCHING

RF = 549V

(AD8174R)
R

= 100V

L

A0 SWITCHING

A1 SWITCHING

SEL, A0, A1

PULSE

0 TO +5V

10ns/DIV

Figure 7. Switching Transient (Glitch) Response

4

G = +2

3

2

1

0

– Volts

OUT

V

–1

–2

–3

–4

= RG = 1kΩ

R

F

R

= 150Ω

L

–3

–2–10123

V

IN

– Volts

Figure 5. Enable and Disable Switching Characteristics

OUTPUT

∆tON = 20ns

200mV/DIV

AD8174R

INØ = +0.5VDC
G = +2

= 549V

R

F

R

= 100V

L

∆t

= 115ns

OFF

SHUTDOWN PULSE

0 TO +5V

(5nsec EDGES)

50ns/DIV

Figure 6. Shutdown Switching Characteristics

Figure 8. Output Voltage vs. Input Voltage, G = +2

= 549Ω
= 100Ω

9

0

–3

–6

–9

–12

–15

–18

–21

–24

–27

9

6

3

0
–3

–6

–9

–12

OUTPUT LEVEL – dBV

–15

–18

–21

1M 1G10M

VIN = 1.0V rms

VIN = 0.5V rms

VIN = 0.25V rms

VIN = 125mV rms

VIN = 625mV rms

FREQUENCY – Hz

100M

G = +2
R

F

R

L

Figure 9. Large Signal Frequency Response

INPUT LEVEL – dBV

REV. 0

–5–