Analog Devices AD8132 d Datasheet
Low Cost, High Speed
FEATURES
High speed
350 MHz −3 dB bandwidth
1200 V/µs slew rate
Resistor settable gain
Internal common-mode feedback to improve gain and
phase balance −68 dB @ 10 MHz
Separate input to set the common-mode output voltage
Low distortion: −99 dBc SFDR @ 5 MHz 800 Ω Load
Low power: 10.7 mA @ 5 V
Power supply range: +2.7 V to ±5.5 V
APPLICATIONS
Low power differential ADC drivers
Differential gain and differential filtering
Video line drivers
Differential in/out level shifting
Single-ended input to differential output drivers
Active transformers
GENERAL DESCRIPTION
The AD8132 is a low cost differential or single-ended input to
differential output amplifier with resistor settable gain. The
AD8132 is a major advancement over op amps for driving
differential input ADCs or for driving signals over long lines.
The AD8132 has a unique internal feedback feature that
provides output gain and phase matching balanced to −68 dB at
10 MHz, suppressing harmonics and reducing radiated EMI.
Manufactured using ADI’s next generation XFCB bipolar
process, the AD8132 has a −3 dB bandwidth of 350 MHz and
delivers a differential signal with −99 dBc SFDR at 5 MHz,
despite its low cost. The AD8132 eliminates the need for a
transformer with high performance ADCs, preserving the low
frequency and dc information. The common-mode level of the
differential output is adjustable by applying a voltage on the
pin, easily level shifting the input signals for driving
V
OCM
single-supply ADCs. Fast overload recovery preserves sampling
accuracy.
Differential Amplifier
AD8132
FUNCTIONAL BLOCK DIAGRAM
AD8132
–IN
1
2
V
OCM
V+
3
+OUT
4
NC = NO CONNECT
Figure 1.
The AD8132 can also be used as a differential driver for the
transmission of high speed signals over low cost twisted pair or
coaxial cables. The feedback network can be adjusted to boost
the high frequency components of the signal. The AD8132 can
be used for either analog or digital video signals or for other
high speed data transmission. The AD8132 is capable of driving
either cat3 or cat5 twisted pair or coaxial with minimal line
attenuation. The AD8132 has considerable cost and
performance improvements over discrete line driver solutions.
Differential signal processing reduces the effects of ground
noise that plagues ground referenced systems. The AD8132 can
be used for differential signal processing (gain and filtering)
throughout a signal chain, easily simplifying the conversion
between differential and single-ended components.
The AD8132 is available in both SOIC and MSOP packages for
operation over −40°C to +125°C temperatures.
6
VS = ±5V
G = +1
3
0
–3
GAIN (dB)
–6
–9
–12
= 2V p-p
V
O, dm
R
= 499Ω
L, dm
1
Figure 2. Large S ignal Frequenc y Respons e
10 100 1k
FREQUENCY (MHz)
+IN
8
NC
7
V–
6
–OUT
5
01035-001
01035-002
Rev. D
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
www.analog.com
AD8132
TABLE OF CONTENTS
Specifications..................................................................................... 3
±D
to ±OUT Specifications...................................................... 3
IN
V
to ±OUT Specifications ..................................................... 4
OCM
±D
to ±OUT Specifications...................................................... 5
IN
V
to ±OUT Specifications ..................................................... 6
OCM
±D
to ±OUT Specifications...................................................... 7
IN
V
to ±OUT Specifications ..................................................... 7
OCM
Absolute Maximum Ratings............................................................ 8
ESD Caution.................................................................................. 8
Pin Configuration and Function Descriptions............................. 9
Typical Performance Characteristics ...........................................10
Test Circuits..................................................................................... 19
Operational Description................................................................ 20
Definition of Terms.................................................................... 20
Basic Circuit Operation............................................................. 20
Theory of Operation ...................................................................... 21
General Usage of the AD8132................................................... 21
Resistorless Differential Amplifier (High Input Impedance
Inverting Amplifier)................................................................... 21
Varying β2 ................................................................................... 22
β1 = 0............................................................................................ 22
Estimating the Output Noise Voltage ...................................... 22
Calculating an Application Circuit’s Input Impedance......... 23
Input Common-Mode Voltage Range in Single-Supply
Applications ................................................................................ 23
Setting the Output Common-Mode Voltage .......................... 23
Driving a Capacitive Load......................................................... 23
Layout, Grounding, and Bypassing .............................................. 24
Circuits......................................................................................... 24
Applications..................................................................................... 25
A/D Driver .................................................................................. 25
Balanced Cable Driver............................................................... 25
Transmit Equalizer..................................................................... 26
Low-Pass Differential Filter...................................................... 26
High Common-Mode Output Impedance Amplifier............ 27
Full-Wave Rectifier .................................................................... 27
Outline Dimensions....................................................................... 29
Ordering Guide .......................................................................... 29
Other β2 = 1 Circuits ................................................................. 22
REVISION HISTORY
12/04—Rev. C to Rev. D.
Changes to the General Description.............................................. 1
Changes to the Specifications ......................................................... 2
Changes to the Absolute Maximum Ratings................................. 8
Updated the Outline Dimensions................................................. 29
Changes to the Ordering Guide.................................................... 29
Rev. D | Page 2 of 32
2/03—Rev. B to Rev. C.
Changes to SPECIFICATIONS .......................................................2
Addition to Estimating the Output Noise Voltage section ....... 15
Updated OUTLINE DIMENSIONS............................................ 21
1/02—Rev. A to Rev. B.
Edits to TRANSMITTER EQUALIZER section ...........................18
AD8132
SPECIFICATIONS
±DIN TO ±OUT SPECIFICATIONS
At 25°C, VS = ±5 V, V
= 499 Ω. Refer to Figure 56 and Figure 57 for test setup and label descriptions. All specifications refer to single-ended input and
R
G
differential outputs, unless otherwise noted.
Table 1.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Large Signal Bandwidth V
V
−3 dB Small Signal Bandwidth V
V
Bandwidth for 0.1 dB Flatness V
V
Slew Rate V
Settling Time 0.1%, V
Overdrive Recovery Time VIN = 5 V to 0 V Step, G = 2 5 ns
NOISE/HARMONIC PERFORMANCE
Second Harmonic V
V
V
Third Harmonic V
V
V
IMD 20 MHz, R
IP3 20 MHz, R
Input Voltage Noise (RTI) f = 0.1 MHz to 100 MHz 8
Input Current Noise f = 0.1 MHz to 100 MHz 1.8
Differential Gain Error NTSC, G = 2, R
Differential Phase Error NTSC, G = 2, R
INPUT CHARACTERISTICS
Offset Voltage (RTI) V
T
Input Bias Current 3 7 µA
Input Resistance Differential 12 MΩ
Common-Mode 3.5 MΩ
Input Capacitance 1 pF
Input Common-Mode Voltage −4 to +3 V
CMRR ∆V
OUTPUT CHARACTERISTICS
Output Voltage Swing Maximum ∆V
Output Current 70 mA
Output Balance Error ∆V
= 0 V, G = 1, R
OCM
= 499 Ω, RF = RG = 348 Ω, unless otherwise noted. For G = 2, R
L, dm
= 2 V p-p 300 350 MHz
OUT
= 2 V p-p, G = 2 190 MHz
OUT
= 0.2 V p-p 360 MHz
OUT
= 0.2 V p-p, G = 2 160 MHz
OUT
= 0.2 V p-p 90 MHz
OUT
= 0.2 V p-p, G = 2 50 MHz
OUT
= 2 V p-p 1000 1200 V/µs
OUT
= 2 V p-p 15 ns
OUT
= 2 V p-p, 1 MHz, R
OUT
= 2 V p-p, 5 MHz, R
OUT
= 2 V p-p, 20 MHz, R
OUT
= 2 V p-p, 1 MHz, R
OUT
= 2 V p-p, 5 MHz, R
OUT
= 2 V p-p, 20 MHz, R
OUT
= 800 Ω −76 dBc
L, dm
= 800 Ω 40 dBm
L, dm
L, dm
L, dm
OS, dm
MIN
OUT, dm
OUT, cm
= V
to T
/2; V
OUT, dm
Variation 10 µV/°C
MAX
/∆V
; ∆V
IN, cm
; Single-Ended Output −3.6 to +3.6 V
OUT
/∆V
OUT, dm
= 150 Ω 0.01 %
= 150 Ω 0.10 Degrees
; ∆V
= 800 Ω −96 dBc
L, dm
= 800 Ω −83 dBc
L, dm
= 800 Ω −73 dBc
L, dm
= 800 Ω −102 dBc
L, dm
= 800 Ω −98 dBc
L, dm
= 800 Ω −67 dBc
L, dm
= V
= V
DIN+
DIN−
= ±1 V; Resistors Matched to 0.01% −70 −60 dB
IN, cm
= 1 V −70 dB
OUT, dm
= 0 V ±1.0 ±3.5 mV
OCM
= 200 Ω, RF = 1000 Ω,
L, dm
nV/√
pA/√
Hz
Hz
Rev. D | Page 3 of 32
AD8132
V
TO ±OUT SPECIFICATIONS
OCM
At 25°C, VS = ±5 V, V
= 499 Ω. Refer to Figure 56 and Figure 57 for test setup and label descriptions. All specifications refer to single-ended input and
R
G
differential outputs, unless otherwise noted.
Table 2.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth ∆V
Slew Rate ∆V
Input Voltage Noise (RTI) f = 0.1 MHz to 100 MHz 12
DC PERFORMANCE
Input Voltage Range ±3.6 V
Input Resistance 50 kΩ
Input Offset Voltage V
Input Bias Current 0.5 µA
V
CMRR ∆V
OCM
Gain ∆V
POWER SUPPLY
Operating Range ±1.35 ±5.5 V
Quiescent Current V
T
Power Supply Rejection Ratio ∆V
OPERATING TEMPERATURE RANGE −40 +125 °C
= 0 V, G = 1, R
OCM
= 499 Ω, RF = RG = 348 Ω, unless otherwise noted. For G = 2, R
L, dm
= 600 mV p-p 210 MHz
OCM
= −1 V to +1 V 400 V/µs
OCM
OS, cm
OUT, dm
OUT, cm
DIN+
MIN
OUT, dm
= V
= V
to T
; V
= V
= V
OUT, cm
DIN+
DIN−
/∆V
; ∆V
OCM
/∆V
OCM
= V
DIN−
Variation 16 µA/°C
MAX
= ±1 V; Resistors Matched to 0.01% −68 dB
OCM
; ∆V
= ±1 V 0.985 1 1.015 V/V
OCM
= 0 V 11 12 13 mA
OCM
= 0 V ±1.5 ±7 mV
OCM
/∆VS; ∆VS = ±1 V −70 −60 dB
= 200 Ω, RF = 1000 Ω,
L, dm
nV/√
Hz
Rev. D | Page 4 of 32
AD8132
±DIN TO ±OUT SPECIFICATIONS
At 25°C, VS = 5 V, V
= 499 Ω. Refer to Figure 56 and Figure 57 for test setup and label descriptions. All specifications refer to single-ended input and
R
G
differential outputs, unless otherwise noted.
Table 3.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Large Signal Bandwidth V
V
−3 dB Small Signal Bandwidth V
V
Bandwidth for 0.1 dB Flatness V
V
Slew Rate V
Settling Time 0.1%, V
Overdrive Recovery Time VIN = 2.5 V to 0 V Step, G = 2 5 ns
NOISE/HARMONIC PERFORMANCE
Second Harmonic V
V
V
Third Harmonic V
V
V
IMD 20 MHz, R
IP3 20 MHz, R
Input Voltage Noise (RTI) f = 0.1 MHz to 100 MHz 8
Input Current Noise f = 0.1 MHz to 100 MHz 1.8
Differential Gain Error NTSC, G = 2, R
Differential Phase Error NTSC, G = 2, R
INPUT CHARACTERISTICS
Offset Voltage (RTI) V
T
Input Bias Current 3 7 µA
Input Resistance Differential 10 MΩ
Common-Mode 3 MΩ
Input Capacitance 1 pF
Input Common-Mode Voltage 1 to 3 V
CMRR ∆V
OUTPUT CHARACTERISTICS
Output Voltage Swing Maximum ∆V
Output Current 50 mA
Output Balance Error ∆V
= 2.5 V, G = 1, R
OCM
= 499 Ω, RF = RG = 348 Ω, unless otherwise noted. For G = 2, R
L, dm
= 2 V p-p 250 300 MHz
OUT
= 2 V p-p, G = 2 180 MHz
OUT
= 0.2 V p-p 360 MHz
OUT
= 0.2 V p-p, G = 2 155 MHz
OUT
= 0.2 V p-p 65 MHz
OUT
= 0.2 V p-p, G = 2 50 MHz
OUT
= 2 V p-p 800 1000 V/µs
OUT
= 2 V p-p 20 ns
OUT
= 2 V p-p, 1 MHz, R
OUT
= 2 V p-p, 5 MHz, R
OUT
= 2 V p-p, 20 MHz, R
OUT
= 2 V p-p, 1 MHz, R
OUT
= 2 V p-p, 5 MHz, R
OUT
= 2 V p-p, 20 MHz, R
OUT
= 800 Ω −76 dBc
L, dm
= 800 Ω 40 dBm
L, dm
L, dm
L, dm
OS, dm
MIN
OUT, dm
OUT, cm
= V
to T
/2; V
OUT, dm
Variation 6 µV/°C
MAX
/∆V
; ∆V
IN, cm
; Single-Ended Output 1.0 to 4.0 V
OUT
/∆V
OUT, dm
= 150 Ω 0.025 %
= 150 Ω 0.15 Degree
; ∆V
= 800 Ω −97 dBc
L, dm
= 800 Ω −100 dBc
L, dm
= 800 Ω −74 dBc
L, dm
= 800 Ω −100 dBc
L, dm
= 800 Ω −99 dBc
L, dm
= 800 Ω −67 dBc
L, dm
= V
= V
DIN+
DIN−
= ±1 V; Resistors Matched to 0.01% −70 −60 dB
IN, cm
= 1 V −68 dB
OUT, dm
= 2.5 V ±1.0 ±3.5 mV
OCM
= 200 Ω, RF = 1000 Ω,
L, dm
nV/√
pA/√
Hz
Hz
Rev. D | Page 5 of 32
AD8132
V
TO ±OUT SPECIFICATIONS
OCM
At 25°C, VS = 5 V, V
= 499 Ω. Refer to Figure 56 and Figure 57 for test setup and label descriptions. All specifications refer to single-ended input and
R
G
differential outputs, unless otherwise noted.
Table 4.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth ∆V
Slew Rate ∆V
Input Voltage Noise (RTI) f = 0.1 MHz to 100 MHz 12
DC PERFORMANCE
Input Voltage Range 1.0 to 3.7 V
Input Resistance 30 kΩ
Input Offset Voltage V
Input Bias Current 0.5 µA
V
CMRR ∆V
OCM
Gain ∆V
POWER SUPPLY
Operating Range 2.7 11 V
Quiescent Current V
T
Power Supply Rejection Ratio ∆V
OPERATING TEMPERATURE RANGE −40 +125 °C
= 2.5 V, G = 1, R
OCM
= 499 Ω, RF = RG = 348 Ω, unless otherwise noted. For G = 2, R
L, dm
= 600 mV p-p 210 MHz
OCM
= 1.5 V to 3.5 V 340 V/µs
OCM
OS, cm
OUT, dm
OUT, cm
DIN+
MIN
OUT, dm
= V
= V
to T
; V
= V
= V
OUT, cm
DIN+
DIN−
/∆V
; ∆V
OCM
/∆V
OCM
= V
DIN−
Variation 10 µA/°C
MAX
= 2.5 V ±1 V; Resistors Matched to 0.01% −66 dB
OCM
; ∆V
= 2.5 V ±1 V 0.985 1 1.015 V/V
OCM
= 2.5 V 9.4 10.7 12 mA
OCM
= 2.5 V ±5 ±11 mV
OCM
/∆VS; ∆VS = ±1 V −70 −60 dB
= 200 Ω, RF = 1000 Ω,
L, dm
nV/√
Hz
Rev. D | Page 6 of 32
AD8132
±DIN TO ±OUT SPECIFICATIONS
At 25°C, VS = 3 V, V
= 499 Ω. Refer to Figure 56 and Figure 57 for test setup and label descriptions. All specifications refer to single-ended input and
R
G
differential outputs, unless otherwise noted.
Table 5.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Large Signal Bandwidth V
V
−3 dB Small Signal Bandwidth V
V
Bandwidth for 0.1 dB Flatness V
V
NOISE/HARMONIC PERFORMANCE
Second Harmonic V
V
V
Third Harmonic V
V
V
INPUT CHARACTERISTICS
Offset Voltage (RTI) V
Input Bias Current 3 µA
CMRR ∆V
= 1.5 V, G = 1, R
OCM
= 499 Ω, RF = RG = 348 Ω unless otherwise noted. For G = 2, R
L, dm
= 1 V p-p 350 MHz
OUT
= 1 V p-p, G = 2 165 MHz
OUT
= 0.2 V p-p 350 MHz
OUT
= 0.2 V p-p, G = 2 150 MHz
OUT
= 0.2 V p-p 45 MHz
OUT
= 0.2 V p-p, G = 2 50 MHz
OUT
= 1 V p-p, 1 MHz, R
OUT
= 1 V p-p, 5 MHz, R
OUT
= 1 V p-p, 20 MHz, R
OUT
= 1 V p-p, 1 MHz, R
OUT
= 1 V p-p, 5 MHz, R
OUT
= 1 V p-p, 20 MHz, R
OUT
OS, dm
OUT, dm
= V
OUT, dm
/∆V
IN, cm
/2; V
; ∆V
= 800 Ω −100 dBc
L, dm
= 800 Ω −94 dBc
L, dm
= 800 Ω −77 dBc
L, dm
= 800 Ω −90 dBc
L, dm
= 800 Ω −85 dBc
L, dm
= 800 Ω −66 dBc
L, dm
= V
= V
DIN+
DIN−
= ±0.5 V; Resistors Matched to 0.01% −60 dB
IN, cm
= 1.5 V ±10 mV
OCM
= 200 Ω, RF = 1000 Ω,
L, dm
V
TO ±OUT SPECIFICATIONS
OCM
At 25°C, VS = 3 V, V
R
= 499 Ω. Refer to Figure 56 and Figure 57 for test setup and label descriptions. All specifications refer to single-ended input and
G
= 1.5 V, G = 1, R
OCM
= 499 Ω, RF = RG = 348 Ω unless otherwise noted. For G = 2, R
L, dm
= 200 Ω, RF = 1000 Ω,
L, dm
differential outputs, unless otherwise noted.
Table 6.
Parameter Conditions Min Typ Max Unit
DC PERFORMANCE
Input Offset Voltage V
Gain ∆V
OS, cm
OUT, cm
= V
OUT, cm
/∆V
OCM
; V
= V
= V
DIN+
DIN−
; ∆V
= ±0.5 V 1 V/V
OCM
= 1.5 V ±7 mV
OCM
POWER SUPPLY
Operating Range 2.7 11 V
Quiescent Current V
Power Supply Rejection Ratio ∆V
= V
= V
DIN+
DIN−
/∆VS; ∆VS = ±0.5 V −70 dB
OUT, dm
= 0 V 7.25 mA
OCM
OPERATING TEMPERATURE RANGE −40 +125 °C
Rev. D | Page 7 of 32
AD8132
ABSOLUTE MAXIMUM RATINGS
Table 7.
Parameter Ratings
Supply Voltage ±5.5 V
V
Internal Power Dissipation 250 mW
Operating Temperature Range −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Lead Temperature (Soldering 10 sec) 300°C
1
Thermal resistance measured on SEMI-standard, 4-layer board.
1
±VS
OCM
8-Lead SOIC: θ
8-Lead MSOP: θ
= 121°C/W
JA
= 142°C/W
JA
Stresses above those listed under absolute maximum ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational section of
this specification is not implied. Exposure to Absolute
Maximum Ratings for extended periods may affect device
reliability.
2.0
1.5
1.0
0.5
MAXIMUM POWER DISSIPATION (W)
8-LEAD SOIC
PACKAGE
8-LEAD
MSOP
PACKAGE
TJ = 150°C
0
–40 –30
–50
Figure 3. Plot of Maximum Power Dissipation vs. Temperature
0 102030405060708090
–20 – 10
AMBIENT TEMPERATURE (°C)
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
01035-003
Rev. D | Page 8 of 32
AD8132
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
AD8132
–IN
1
V
2
OCM
V+
3
+OUT
4
NC = NO CONNECT
8
7
6
5
+IN
NC
V–
–OUT
01035-004
Figure 4. Pin Configuration
Table 8. Pin Function Descriptions
Pin
No.
Mnemonic Description
1 −IN Negative Input.
2 V
OCM
Voltage applied to this pin sets the
common-mode output voltage with
a ratio of 1:1. For example, 1 V dc on
sets the dc bias level on +OUT and
V
OCM
−OUT to 1 V.
3 V+ Positive Supply Voltage.
4 +OUT
5 −OUT
Positive Output. Note that the voltage at
is inverted at +OUT (see Figure 64).
−D
IN
Negative Output. Note that the voltage at
is inverted at −OUT (see Figure 64).
+D
IN
6 V− Negative Supply Voltage.
7 NC No Connect.
8 +IN Positive Input.
Rev. D | Page 9 of 32
AD8132
TYPICAL PERFORMANCE CHARACTERISTICS
2
1
0
–1
–2
GAIN (dB)
–3
G = +1
V
= 0.2V p-p
O, dm
= 499Ω
R
L, dm
–4
–5
1
10 100 1k
FREQUENCY (MHz)
Figure 5. Small Signal Frequency Respon se (See Figure 56)
VS = +3V
VS = ±5V
VS = +5V
01035-006
3
2
1
0
–1
GAIN (dB)
–2
G = +1
V
= 2V p-p FOR VS = ±5V, +5V
O, dm
–3
–4
–5
= 1V p-p FOR VS = +3V
V
O, dm
= 499Ω
R
L, dm
1 10 100 1k
FREQUENCY (MHz)
Figure 8. Large S ignal Frequenc y Respons e; C
VS = +3V
VS = +5V
VS = +3V
= 0 pF (See Figure 56)
F
VS = ±5V
01035-009
0.5
G = +1
0.4
V
= 0.2V p-p
O, dm
= 499Ω
R
L, dm
0.3
0.2
0.1
0
GAIN (dB)
–0.1
–0.2
–0.3
–0.4
–0.5
1 10 100 1k
FREQUENCY (MHz)
VS = ±5V
Figure 6. 0.1 dB Flatness vs. Frequency C
0.2
0.1
0
–0.1
–0.2
GAIN (dB)
–0.3
G = +1
V
= 0.2V p-p
O, dm
= 499Ω
R
–0.4
L, dm
–0.5
1 10 100 1k
VS = +3V
VS = ±5V
FREQUENCY (MHz)
Figure 7. 0.1 dB Flatness vs. Frequency C
VS = +3V
= 0 pF (See Figure 56)
F
VS = +5V
= 0.5 pF (See Figure 56)
F
VS = +5V
01035-007
01035-008
2
1
0
–1
–2
GAIN (dB)
G = +1
–3
–4
–5
= 2V p-p FOR VS = ±5V, +5V
V
O, dm
= 1V p-p FOR VS = +3V
V
O, dm
= 499Ω
R
L, dm
1 10 100 1k
VS = ±5V
FREQUENCY (MHz)
Figure 9. Large S ignal Frequenc y Respons e; C
3
2
1
0
–1
GAIN (dB)
–2
VS = ±5V
G = +1
–3
–4
–5
= 2V p-p
V
O, dm
= 499Ω
R
L, dm
1 10 100 1k
FREQUENCY (MHz)
VS = +3V
VS = +5V
VS = +3V
= 0.5 pF (See Figure 56)
F
+85°C
–40°C
+25°C
Figure 10. Large Signal Response vs. Temperature (See Figure 56)
01035-010
01035-011
Rev. D | Page 10 of 32
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