Analog Devices AD8132ARM-REEL7, AD8132ARM-REEL, AD8132ARM, AD8132AR-REEL7, AD8132AR-REEL Datasheet
...
REV. B
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a
AD8132
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2002
Low-Cost, High-Speed
Differential Amplifier
FUNCTIONAL BLOCK DIAGRAM
AD8132
+
1
2
3
4
NC = NO CONNECT
–IN +IN
V
OCM
NC
V+
V–
+OUT
–OUT
8
7
6
5
FEATURES
High Speed
350 MHz –3 dB Bandwidth
1200 V/s Slew Rate
Resistor-Settable Gain
Internal Common-Mode Feedback to Improve Gain
and Phase Balance –68 dB @ 10 MHz
Separate Input to Set the Common-Mode Output
Voltage
Low Distortion –99 dBc SFDR @ 5 MHz 800 Load
Low Power 10.7 mA @ 5 V
Power Supply Range +2.7 V to 5.5 V
APPLICATIONS
Low Power Differential ADC Driver
Differential Gain and Differential Filtering
Video Line Driver
Differential In/Out Level-Shifting
Single-Ended Input to Differential Output Driver
Active Transformer
GENERAL DESCRIPTION
The AD8132 is a low-cost differential or single-ended input to
differential output amplifier with resistor-settable gain. The
AD8132 is a major advancement over op amps for driving
differential input ADCs or for driving signals over long lines.
The AD8132 has a unique internal feedback feature that provides output gain and phase matching balanced to –68 dB at
10 MHz, suppressing harmonics, and reducing radiated EMI.
Manufactured on ADI’s next generation of XFCB bipolar
process, the AD8132 has a –3 dB bandwidth of 350 MHz and
delivers a differential signal with –99 dBc SFDR at 5 MHz,
despite its low cost. The AD8132 eliminates the need for a
transformer with high-performance ADCs, preserving the low
frequency and dc information. The common-mode level of the
differential output is adjustable by applying a voltage on the V
OCM
pin, easily level-shifting the input signals for driving single supply
ADCs. Fast overload recovery preserves sampling accuracy.
The AD8132 can also be used as a differential driver for the
transmission of high-speed signals over low-cost twisted pair or
coaxial cables. The feedback network can be adjusted to boost
the high-frequency components of the signal. The AD8132 can
be used for either analog or digital video signals or for other
high-speed data transmission. The AD8132 is capable of driving
either cat3 or cat5 twisted pair or coaxial with minimal line
attenuation. The AD8132 has considerable cost and performance
improvements over discrete line driver solutions.
Differential signal processing reduces the effects of ground noise
which plagues ground referenced systems. The AD8132 can be used
for differential signal processing (gain and filtering) throughout a
signal chain, easily simplifying the conversion between differential
and single-ended components.
The AD8132 is available in both SOIC and µSOIC packages for
operation over –40°C to +85°C temperatures.
FREQUENCY – MHz
6
1
GAIN – dB
3
0
–3
–6
–9
–12
10 100 1k
VS = 5V
G = 1
V
O,dm
= 2V p-p
R
L,dm
= 499
Figure 1. Large Signal Frequency Response
REV. B
–2–
AD8132–SPECIFICATIONS
P
arameter Conditions Min Typ Max Unit
DIN to OUT Specifications
DYNAMIC PERFORMANCE
–3 dB Large Signal Bandwidth V
OUT
= 2 V p-p 300 350 MHz
V
OUT
= 2 V p-p, G = 2 190 MHz
–3 dB Small Signal Bandwidth V
OUT
= 0.2 V p-p 360 MHz
V
OUT
= 0.2 V p-p, G = 2 160 MHz
Bandwidth for 0.1 dB Flatness V
OUT
= 0.2 V p-p 90 MHz
V
OUT
= 0.2 V p-p, G = 2 50 MHz
Slew Rate V
OUT
= 2 V p-p 1000 1200 V/µs
Settling Time 0.1%, V
OUT
= 2 V p-p 15 ns
Overdrive Recovery Time VIN = 5 V to 0 V Step, G = 2 5 ns
NOISE/HARMONIC PERFORMANCE
Second Harmonic V
OUT
= 2 V p-p, 1 MHz, R
L,dm
= 800 Ω –96 dBc
V
OUT
= 2 V p-p, 5 MHz, R
L,dm
= 800 Ω –83 dBc
V
OUT
= 2 V p-p, 20 MHz, R
L,dm
= 800 Ω –73 dBc
Third Harmonic V
OUT
= 2 V p-p, 1 MHz, R
L,dm
= 800 Ω –102 dBc
V
OUT
= 2 V p-p, 5 MHz, R
L,dm
= 800 Ω –98 dBc
V
OUT
= 2 V p-p, 20 MHz, R
L,dm
= 800 Ω –67 dBc
IMD 20 MHz, R
L,dm
= 800 Ω –76 dBc
IP3 20 MHz, R
L,dm
= 800 Ω 40 dBm
Input Voltage Noise (RTI) f = 0.1 MHz to 100 MHz 8 nV/√Hz
Input Current Noise f = 0.1 MHz to 100 MHz 1.8 pA/√Hz
Differential Gain Error NTSC, G = 2, R
L,dm
= 150 Ω 0.01 %
Differential Phase Error NTSC, G = 2, R
L,dm
= 150 Ω 0.10 Degrees
INPUT CHARACTERISTICS
Offset Voltage (RTI) V
OS,dm
= V
OUT,dm
/2; V
DIN+
= V
DIN–
= V
OCM
= 0 V ±1.0 ±3.5 mV
T
MIN
to T
MAX
Variation 10 µV/°C
Input Bias Current 37µA
Input Resistance Differential 12 MΩ
Common-Mode 3.5 MΩ
Input Capacitance 1pF
Input Common-Mode Voltage –7 to +6 V
CMRR ∆V
OUT,dm
/∆V
IN,cm
; ∆V
IN,cm
= ±1 V; –70 –60 dB
Resistors Matched to 0.01%
OUTPUT CHARACTERISTICS
Output Voltage Swing Maximum ∆V
OUT
; Single-Ended Output –3.6 to +3.6 V
Output Current 70 mA
Output Balance Error ∆V
OUT,cm
/∆V
OUT,dm
; ∆V
OUT,dm
= 1 V –70 dB
V
OCM
to OUT Specifications
DYNAMIC PERFORMANCE
–3 dB Bandwidth ∆V
OCM
= 600 mV p-p 210 MHz
Slew Rate ∆V
OCM
= –1 V to +1 V 400 V/µs
DC PERFORMANCE
Input Voltage Range ±3.6 V
Input Resistance 150 kΩ
Input Offset Voltage V
OS,cm
= V
OUT,cm
; V
DIN+
= V
DIN–
= V
OCM
= 0 V ±1.5 ±7mV
Input Bias Current 0.5 µA
V
OCM
CMRR [∆V
OUT,dm
/∆V
OCM
]; ∆V
OCM
= ±1 V; –68 dB
Resistors Matched to 0.01%
Gain ∆V
OUT,cm
/∆V
OCM; ∆VOCM
= ±1 V 0.985 1 1.015 V/V
POWER SUPPLY
Operating Range ±1.35 ± 5.5 V
Quiescent Current V
DIN+
= V
DIN–
= V
OCM
= 0 V 11 12 13 mA
T
MIN
to T
MAX
Variation 16 µA/°C
Power Supply Rejection Ratio ∆V
OUT,dm
/∆VS; ∆VS = ±1 V –70 –60 dB
OPERATING TEMPERATURE RANGE –40
+85 °C
Specifications subject to change without notice.
(@ 25C, VS = 5 V, V
OCM
= 0 V, G = 1, R
L,dm
= 499 , RF = RG = 348 unless
otherwise noted. For G = 2, R
L,dm
= 200 , RF = 1000 , RG = 499 . Refer to TPC 1 and TPC 10 for test setup and label descriptions. All
specifications refer to single-ended input and differential outputs unless otherwise noted.)
REV. B
–3–
AD8132
P
arameter Conditions Min Typ Max Unit
DIN to OUT Specifications
DYNAMIC PERFORMANCE
–3 dB Large Signal Bandwidth V
OUT
= 2 V p-p 250 300 MHz
V
OUT
= 2 V p-p, G = 2 180 MHz
–3 dB Small Signal Bandwidth V
OUT
= 0.2 V p-p 360 MHz
V
OUT
= 0.2 V p-p, G = 2 155 MHz
Bandwidth for 0.1 dB Flatness V
OUT
= 0.2 V p-p 65 MHz
V
OUT
= 0.2 V p-p, G = 2 50 MHz
Slew Rate V
OUT
= 2 V p-p 800 1000 V/µs
Settling Time 0.1%, V
OUT
= 2 V p-p 20 ns
Overdrive Recovery Time VIN = 2.5 V to 0 V Step, G = 2 5 ns
NOISE/HARMONIC PERFORMANCE
Second Harmonic V
OUT
= 2 V p-p, 1 MHz, R
L,dm
= 800 Ω –97 dBc
V
OUT
= 2 V p-p, 5 MHz, R
L,dm
= 800 Ω –100 dBc
V
OUT
= 2 V p-p, 20 MHz, R
L,dm
= 800 Ω –74 dBc
Third Harmonic V
OUT
= 2 V p-p, 1 MHz, R
L,dm
= 800 Ω –100 dBc
V
OUT
= 2 V p-p, 5 MHz, R
L,dm
= 800 Ω –99 dBc
V
OUT
= 2 V p-p, 20 MHz, R
L,dm
= 800 Ω –67 dBc
IMD 20 MHz, R
L,dm
= 800 Ω –76 dBc
IP3 20 MHz, R
L,dm
= 800 Ω 40 dBm
Input Voltage Noise (RTI) f = 0.1 MHz to 100 MHz 8 nV/√Hz
Input Current Noise f = 0.1 MHz to 100 MHz 1.8 pA/√Hz
Differential Gain Error NTSC, G = 2, R
L,dm
= 150 Ω 0.025 %
Differential Phase Error NTSC, G = 2, R
L,dm
= 150 Ω 0.15 Degree
INPUT CHARACTERISTICS
Offset Voltage (RTI) V
OS,dm
= V
OUT,dm
/2; V
DIN+
= V
DIN–
= V
OCM
= 2.5 V ± 1.0 ±3.5 mV
T
MIN
to T
MAX
Variation 6 µV/°C
Input Bias Current 37µA
Input Resistance Differential 10 MΩ
Common-Mode 3 MΩ
Input Capacitance 1pF
Input Common-Mode Voltage –1 to +4 V
CMRR ∆V
OUT,dm
/∆V
IN,cm
; ∆V
IN,cm
= ±1 V; –70 –60 dB
Resistors Matched to 0.01%
OUTPUT CHARACTERISTICS
Output Voltage Swing Maximum ∆V
OUT
; Single-Ended Output 1 to 3.7 V
Output Current 50 mA
Output Balance Error ∆V
OUT,cm
/∆V
OUT,dm
; ∆V
OUT,dm
= 1 V –68 dB
V
OCM
to OUT Specifications
DYNAMIC PERFORMANCE
–3 dB Bandwidth ∆V
OCM
= 600 mV p-p 210 MHz
Slew Rate ∆V
OCM
= 1.5 V to 3.5 V 340 V/µs
DC PERFORMANCE
Input Voltage Range 1 to 3.7 V
Input Resistance 130 kΩ
Input Offset Voltage V
OS,cm
= V
OUT,cm
; V
DIN+
= V
DIN–
= V
OCM
= 2.5 V ± 5 ±11 mV
Input Bias Current 0.5 µA
V
OCM
CMRR [∆V
OUT,dm
/∆V
OCM
]; ∆V
OCM
= 2.5 ± 1 V; –66 dB
Resistors Matched to 0.01%
Gain ∆V
OUT,cm
/∆V
OCM; ∆VOCM
= 2.5 ± 1 V 0.985 1 1.015 V/V
POWER SUPPLY
Operating Range 2.7 11 V
Quiescent Current V
DIN+
= V
DIN–
= V
OCM
= 2.5 V 9.4 10.7 12 mA
T
MIN
to T
MAX
Variation 10 µA/°C
Power Supply Rejection Ratio ∆V
OUT,dm
/∆VS; ∆VS = ±1 V –70 –60 dB
OPERATING TEMPERATURE RANGE –40
+85 °C
Specifications subject to change without notice.
(@ 25C, VS = 5 V, V
OCM
= 2.5 V, G = 1, R
L,dm
= 499 , RF = RG = 348 unless otherwise noted. For G = 2,
R
L,dm
= 200 , RF = 1000 , RG = 499 . Refer to TPC 1 and TPC 10 for test setup and label descriptions. All specifications refer to single-
ended input and differential outputs unless otherwise noted.)
SPECIFICATIONS
REV. B
–4–
AD8132–SPECIFICATIONS
P
arameter Conditions Min Typ Max Unit
DIN to OUT Specifications
DYNAMIC PERFORMANCE
–3 dB Large Signal Bandwidth V
OUT
= 1 V p-p 350 MHz
V
OUT
= 1 V p-p, G = 2 165 MHz
–3 dB Small Signal Bandwidth V
OUT
= 0.2 V p-p 350 MHz
V
OUT
= 0.2 V p-p, G = 2 150 MHz
Bandwidth for 0.1 dB Flatness V
OUT
= 0.2 V p-p 45 MHz
V
OUT
= 0.2 V p-p, G = 2 50 MHz
NOISE/HARMONIC PERFORMANCE
Second Harmonic V
OUT
= 1 V p-p, 1 MHz, R
L,dm
= 800 Ω –100 dBc
V
OUT
= 1 V p-p, 5 MHz, R
L,dm
= 800 Ω –94 dBc
V
OUT
= 1 V p-p, 20 MHz, R
L,dm
= 800 Ω –77 dBc
Third Harmonic V
OUT
= 1 V p-p, 1 MHz, R
L,dm
= 800 Ω –90 dBc
V
OUT
= 1 V p-p, 5 MHz, R
L,dm
= 800 Ω –85 dBc
V
OUT
= 1 V p-p, 20 MHz, R
L,dm
= 800 Ω –66 dBc
INPUT CHARACTERISTICS
Offset Voltage (RTI) V
OS,dm
= V
OUT,dm
/2; V
DIN+
= V
DIN–
= V
OCM
= 1.5 V ± 10 mV
Input Bias Current 3 µA
CMRR ∆V
OUT,dm
/∆V
IN,cm
; ∆V
IN,cm
= ±0.5 V; –60 dB
Resistors Matched to 0.01%
V
OCM
to OUT Specifications
DC PERFORMANCE
Input Offset Voltage V
OS,cm
= V
OUT,cm
; V
DIN+
= V
DIN–
= V
OCM
= 1.5 V ± 7mV
Gain ∆V
OUT,cm
/∆V
OCM; ∆VOCM
= ±0.5 V 1 V/V
POWER SUPPLY
Operating Range 2.7 11 V
Quiescent Current V
DIN+
= V
DIN–
= V
OCM
= 0 V 7.25 mA
Power Supply Rejection Ratio ∆V
OUT,dm
/∆VS; ∆VS = ±0.5 V –70 dB
OPERATING TEMPERATURE RANGE –40
+85 °C
Specifications subject to change without notice.
(@ 25C, VS = 3 V, V
OCM
= 1.5 V, G = 1, R
L,dm
= 499 , RF = RG = 348 unless
otherwise noted. For G = 2, R
L,dm
= 200 , RF = 1000 , RG = 499 . Refer to TPC 1 and TPC 10 for test setup and label descriptions. All
specifications refer to single-ended input and differential outputs unless otherwise noted.)
REV. B
AD8132
–5–
ABSOLUTE MAXIMUM RATINGS
1, 2
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5.5 V
V
OCM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±V
S
Internal Power Dissipation . . . . . . . . . . . . . . . . . . . . 250 mW
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above listed in the operational section of this
specification is not implied. Exposure to Absolute Maximum Ratings for any
extended periods may affect device reliability.
2
Thermal resistance measured on SEMI standard 4-layer board.
8-Lead SOIC: θJA = 121°C/W
8-Lead µSOIC: θJA = 142°C/W
AMBIENT TEMPERATURE – C
–50
0
TJ = 150C
2.0
1.5
1.0
MAXIMUM POWER DISSIPATION – Watts
8-LEAD SOIC
PACKAGE
–40 –30
0 102030405060708090
8-LEAD
microSOIC
0.5
–20 –10
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding Information
AD8132AR –40°C to +85°C 8-Lead SOIC SO-8
AD8132AR-REEL
1
–40°C to +85°C 8-Lead SOIC 13" Tape and Reel
AD8132AR-REEL7
2
–40°C to +85°C 8-Lead SOIC 7" Tape and Reel
AD8132ARM –40°C to +85°C 8-Lead µSOIC RM-8 HMA
AD8132ARM-REEL
3
–40°C to +85°C 8-Lead µSOIC 13" Tape and Reel HMA
AD8132ARM-REEL7
2
–40°C to +85°C 8-Lead µSOIC 7" Tape and Reel HMA
AD8132-EVAL Evaluation Board
NOTES
1
13" Reels of 2500 each.
2
7" Reels of 1000 each.
3
13" Reels of 3000 each.
PIN FUNCTION DESCRIPTIONS
Pin No. Mnemonic Function
1 –IN Negative Input
2V
OCM
Voltage applied to this pin sets the
common-mode output voltage with a
ratio of 1:1. For example, 1 V dc on
V
OCM
will set the dc bias level on
+OUT and –OUT to 1 V.
3 V+ Positive Supply Voltage
4 +OUT Positive Output. Note: the voltage at
–D
IN
is inverted at +OUT.
5 –OUT Negative Output. Note: the voltage at
+D
IN
is inverted at –OUT.
6 V– Negative Supply Voltage
7 NC No Connect
8 +IN Positive Input
PIN CONFIGURATION
AD8132
+
1
2
3
4
NC = NO CONNECT
–IN +IN
V
OCM
NC
V+
V–
+OUT
–OUT
8
7
6
5
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD8132 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. B
AD8132
–6–
0.1F
348
348
49.9
24.9
348
348
499
C
F
C
F
TPC 1. Basic Test Circuit, G = 1
FREQUENCY – MHz
GAIN – dB
1 10 100 1k
VS AS SHOWN
G = 1
V
O,dm
= 0.2V p-p
R
L,dm
= 499
0.2
0.1
0.0
–0.1
–0.2
–0.3
–0.4
–0.5
VS = 3V
VS = 5V
VS = 5V
TPC 4. 0.1 dB Flatness vs. Frequency;
C
F
= 0.5 pF
FREQUENCY – MHz
GAIN – dB
1 10 100 1k
2
1
0
–1
–2
–3
–4
–5
3
VS = 5V
G = 1
V
O,dm
= 2V p-p
R
L,dm
= 499
TEMPERATURE AS SHOWN
–40C
+85C
+25C
TPC 7. Large Signal Response vs.
Temperature
FREQUENCY – MHz
GAIN – dB
2
1
1
0
–1
–2
–3
–4
–5
10 100 1k
VS AS SHOWN
G = 1
V
O,dm
= 0.2V p-p
R
L,dm
= 499
VS = 3V
VS = 5V
VS = 5V
TPC 2. Small Signal Frequency
Response
FREQUENCY – MHz
GAIN – dB
1 10 100 1k
2
1
0
–1
–2
–3
–4
–5
3
VS AS SHOWN
G = 1
V
O,dm
= 2V p-p FOR VS = 5V, 5V
V
O,dm
= 1V p-p FOR VS = 3V
R
L,dm
= 499
VS = 3V
VS = 5V
VS = 5V
VS = 3V
TPC 5. Large Signal Frequency
Response; C
F
= 0 pF
FREQUENCY – MHz
GAIN – dB
1 10 100 1k
2
1
0
–1
–2
–3
–4
–5
3
VS = 5V
G = 1
V
O,dm
= 2V p-p
R
L,dm
= 499
R
F
AS SHOWN
RF = 499
RF = 348
RF = 249
TPC 8. Large Signal Frequency
Response vs. R
F
FREQUENCY – MHz
GAIN – dB
1 10 100 1k
0.4
0.3
0.2
0.1
0.0
–0.1
–0.2
–0.3
–0.4
–0.5
0.5
VS AS SHOWN
G = 1
V
O,dm
= 0.2V p-p
R
L,dm
= 499
VS = 3V
VS = 5V
VS = 5V
TPC 3. 0.1 dB Flatness vs. Frequency;
C
F
= 0 pF
FREQUENCY – MHz
GAIN – dB
1 10 100 1k
2
1
0
–1
–2
–3
–4
–5
VS AS SHOWN
G = 1
V
O,dm
= 2V p-p FOR VS = 5V, 5V
V
O,dm
= 1V p-p FOR VS = 3V
R
L,dm
= 499
VS = 3V
VS = 5V
VS = 5V
VS = 3V
TPC 6. Large Signal Frequency
Response; C
F
= 0.5 pF
FREQUENCY – MHz
IMPEDANCE –
100
1
10
1
0.1
10 100
VS = 5V
VS = 5V
TPC 9. Closed-Loop Single-Ended
Z
OUT
vs. Frequency; G = 1
–Typical Performance Characteristics
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