Analog Devices AD812AR, AD812AN, AD812AR-REEL7, AD812AR-REEL Datasheet

Dual, Current Feedback

OUT1

–IN1

+IN1

V+
OUT2
–IN2

+IN2

V–

AD812

+

+

4

3

2

1

5

6

7

8

a

FEATURES
Two Video Amplifiers in One 8-Lead SOIC Package
Optimized for Driving Cables in Video Systems
Excellent Video Specifications (R

Gain Flatness 0.1 dB to 40 MHz

0.02% Differential Gain Error

0.02ⴗ Differential Phase Error

Low Power

Operates on Single +3 V Supply

5.5 mA/Amplifier Max Power Supply Current

High Speed

145 MHz Unity Gain Bandwidth (3 dB)
1600 V/␮s Slew Rate

Easy to Use

50 mA Output Current
Output Swing to 1 V of Rails (150 ⍀ Load)

APPLICATIONS
Video Line Driver
Professional Cameras
Video Switchers
Special Effects

PRODUCT DESCRIPTION

The AD812 is a low power, single supply, dual video amplifier.
Each of the amplifiers have 50 mA of output current and are

optimized for driving one back-terminated video load (150 Ω)

each. Each amplifier is a current feedback amplifier and fea­tures gain flatness of 0.1 dB to 40 MHz while offering differen-

tial gain and phase error of 0.02% and 0.02°. This makes the

AD812 ideal for professional video electronics such as cameras
and video switchers.

= 150 ⍀):

L

Low Power Op Amp

AD812

PIN CONFIGURATION

8-Lead Plastic

Mini-DIP and SOIC

The AD812 offers low power of 4.0 mA per amplifier max (VS =
+5 V) and can run on a single +3 V power supply. The outputs
of each amplifier swing to within one volt of either supply rail to
easily accommodate video signals of 1 V p-p. Also, at gains of
+2 the AD812 can swing 3 V p-p on a single +5 V power sup­ply. All this is offered in a small 8-lead plastic DIP or 8-lead
SOIC package. These features make this dual amplifier ideal
for portable and battery powered applications where size and
power is critical.

The outstanding bandwidth of 145 MHz along with 1600 V/µs

of slew rate make the AD812 useful in many general purpose
high speed applications where a single +5 V or dual power sup-

plies up to ±15 V are available. The AD812 is available in the
industrial temperature range of –40°C to +85°C.

0.4

VS = 615V

65V

5V
3V

G = +2
R

= 150V

L

0.3

0.2

0.1

0
–0.1

–0.2

–0.3

NORMALIZED GAIN – dB

–0.4

–0.5
–0.6

100k

1M 100M10M

FREQUENCY – Hz

Figure 1. Fine-Scale Gain Flatness vs. Frequency, Gain

= 150

= +2, R

L

Ω

DIFFERENTIAL GAIN

0.08

0.06

0.04

0.02

DIFFERENTIAL PHASE – Degrees

0

6

5

DIFFERENTIAL PHASE

SUPPLY VOLTAGE – 6Volts

Figure 2. Differential Gain and Phase vs. Supply Voltage,

= 150

Gain = +2, R

L

Ω

0.06

0.04

0.02

DIFFERENTIAL GAIN – %

15

14121110 13987

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1998

AD812–SPECIFICATIONS

Dual Supply

(@ TA = +25ⴗC, RL = 150 ⍀, unless otherwise noted)

Model AD812A

Conditions V

S

Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Bandwidth G = +2, No Peaking ±5 V 50 65 MHz

±15 V 75 100 MHz

Gain = +1 ±15 V 100 145 MHz

Bandwidth for 0.1 dB Flatness G = +2 ±5 V 20 30 MHz

±15 V 25 40 MHz

Slew Rate

1

G = +2, R

= 1 kΩ±5 V 275 425 V/µs

L

20 V Step ±15 V 1400 1600 V/µs

G = –1, R

= 1 kΩ±5 V 250 V/µs

L

±15 V 600 V/µs

Settling Time to 0.1% G = –1, R

V

= 3 V Step ±5 V 50 ns

O

V

= 10 V Step ±15 V 40 ns

O

= 1 kΩ

L

NOISE/HARMONIC PERFORMANCE

Total Harmonic Distortion fC = 1 MHz, R
Input Voltage Noise f = 10

kHz ±5 V, ±15 V 3.5 nV/√Hz

= 1 kΩ±15 V –90 dBc

L

Input Current Noise f = 10 kHz, +In ±5 V, ±15 V 1.5 pA/√

f = 10 kHz, –In ±5 V, ±15 V 18 pA/√

Differential Gain Error NTSC, G = +2, R

= 150 Ω±5 V 0.05 0.1 %

L

±15 V 0.02 0.06 %

Differential Phase Error ±5 V 0.07 0.15 Degrees

±15 V 0.02 0.06 Degrees

Hz
Hz

DC PERFORMANCE

Input Offset Voltage ±5 V, ±15 V 2 5 mV

T

MIN–TMAX

12 mV

Offset Drift ±5 V, ±15 V 15 µV/°C
–Input Bias Current ±5 V, ±15 V 7 25 µA

T

MIN–TMAX

38 µA

+Input Bias Current ±5 V, ±15 V 0.3 1.5 µA

Open-Loop Voltage Gain V

Open-Loop Transresistance V

T

MIN–TMAX

= ±2.5 V, RL = 150 Ω±5 V 68 76 dB

O

T

MIN–TMAX

V

= ±10 V, RL = 1 kΩ±15 V 76 82 dB

O

T

MIN–TMAX

= ±2.5 V, RL = 150 Ω±5 V 350 550 kΩ

O

T

MIN–TMAX

= ±10 V, RL = 1 kΩ±15 V 450 800 kΩ

V

O

T

MIN–TMAX

69 dB

75 dB

270 kΩ
370 kΩ

2.0 µA

INPUT CHARACTERISTICS

Input Resistance +Input ±15 V 15 MΩ

–Input 65 Ω

Input Capacitance +Input 1.7 pF

Input Common Mode ±5 V 4.0 ±V
Voltage Range ±15 V 13.5 ±V

Common-Mode Rejection Ratio

Input Offset Voltage V

= ±2.5 V ±5 V 51 58 dB

CM

–Input Current 23.0µA/V
+Input Current 0.07 0.15 µA/V

Input Offset Voltage V

= ±12 V ±15 V 55 60 dB

CM

–Input Current 1.5 3.3 µA/V
+Input Current 0.05 0.15 µA/V

–2–

REV. B

Model AD812A

Conditions V

S

Min Typ Max Units

OUTPUT CHARACTERISTICS

Output Voltage Swing R

= 150 Ω, T

L

= 1 kΩ, T

R

L

MIN –TMAX

MIN –TMAX

±5 V 3.5 3.8 ±V
±15 V 13.6 14.0 ±V

Output Current ±5 V 30 40 mA

±15 V 40 50 mA

Short Circuit Current G = +2, R

= 2 V

V

IN

= 715 Ω±15 V 100 mA

F

Output Resistance Open-Loop ±15 V 15 Ω

MATCHING CHARACTERISTICS

Dynamic

Crosstalk G = +2, f = 5 MHz ±5 V, ±15 V –75 dB
Gain Flatness Match G = +2, f = 40 MHz ±15 V 0.1 dB

DC

Input offset Voltage T
–Input Bias Current T

MIN –TMAX

MIN –TMAX

±5 V, ±15 V 0.5 3.6 mV
±5 V, ±15 V 2 25 µA

POWER SUPPLY

Operating Range ±1.2 ±18 V
Quiescent Current Per Amplifier ±5 V 3.5 4.0 mA

±15 V 4.5 5.5 mA

T

MIN –TMAX

±15 V 6.0 mA

Power Supply Rejection Ratio

Input Offset Voltage V

= ±1.5 V to ±15 V 70 80 dB

S

–Input Current 0.3 0.6 µA/V
+Input Current 0.005 0.05 µA/V

NOTES

1

Slew rate measurement is based on 10% to 90% rise time in the specified closed-loop gain.

Specifications subject to change without notice.

AD812

Single Supply

(@ TA = +25ⴗC, RL = 150 ⍀, unless otherwise noted)

Model AD812A

Conditions V

S

Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Bandwidth G = +2, No Peaking +5 V 35 50 MHz

+3 V 30 40 MHz

Bandwidth for 0.1 dB

Flatness G = +2 +5 V 13 20 MHz

+3 V 10 18 MHz

Slew Rate

1

G = +2, R

= 1 kΩ +5 V 125 V/µs

L

+3 V 60 V/µs

NOISE/HARMONIC PERFORMANCE

Input Voltage Noise f = 10

kHz +5 V, +3 V 3.5 nV/√Hz

Input Current Noise f = 10 kHz, +In +5 V, +3 V 1.5 pA/√Hz

f = 10 kHz, –In +5 V, +3 V 18 pA/√Hz

Differential Gain Error

2

Differential Phase Error

2

NTSC, G = +2, R

= 150 Ω +5 V 0.07 %

L

G = +1 +3 V 0.15 %
G = +2 +5 V 0.06 Degrees
G = +1 +3 V 0.15 Degrees

REV. B

–3–

AD812–SPECIFICATIONS

Single Supply (Continued)

AD812A

Model Conditions V

S

DC PERFORMANCE

Input Offset Voltage +5 V, +3 V 1.5 4.5 mV

T

MIN –TMAX

Offset Drift +5 V, +3 V 7 µV/°C
–Input Bias Current +5 V, +3 V 2 20 µA

T

MIN –TMAX

+Input Bias Current +5 V, +3 V 0.2 1.5 µA

T

MIN –TMAX

Open-Loop Voltage Gain V

Open-Loop Transresistance V

= +2.5 V p-p +5 V 67 73 dB

O

V

= +0.7 V p-p +3 V 70 dB

O

= +2.5 V p-p +5 V 250 400 kΩ

O

V

= +0.7 V p-p +3 V 300 kΩ

O

INPUT CHARACTERISTICS

Input Resistance +Input +5 V 15 MΩ

–Input +5 V 90 Ω

Input Capacitance +Input 2 pF
Input Common Mode +5 V 1.0 4.0 V
Voltage Range +3 V 1.0 2.0 V
Common-Mode Rejection Ratio

Input Offset Voltage V

= 1.25 V to 3.75 V +5 V 52 55 dB

CM

–Input Current 35.5µA/V
+Input Current 0.1 0.2 µA/V

Input Offset Voltage V

= 1 V to 2 V +3 V 52 dB

CM

–Input Current 3.5 µA/V
+Input Current 0.1 µA/V

Min Typ Max Units

7.0 mV

30 µA

2.0 µA

OUTPUT CHARACTERISTICS

Output Voltage Swing p-p R

= 1 kΩ, T

L

= 150 Ω, T

R

L

MIN –TMAX

MIN –TMAX

+5 V 3.0 3.2 V p-p
+5 V 2.8 3.1 V p-p
+3 V 1.0 1.3 V p-p

Output Current +5 V 20 30 mA

+3 V 15 25 mA

Short Circuit Current G = +2, R

= 715 Ω +5 V 40 mA

F

VIN = 1 V

MATCHING CHARACTERISTICS

Dynamic

Crosstalk G = +2, f = 5 MHz +5 V, +3 V –72 dB
Gain Flatness Match G = +2, f = 20 MHz +5 V, +3 V 0.1 dB

DC

Input offset Voltage T
–Input Bias Current T

MIN –TMAX

MIN –TMAX

+5 V, +3 V 0.5 3.5 mV

+5 V, +3 V 2 25 µA

POWER SUPPLY

Operating Range 2.4 36 V
Quiescent Current Per Amplifier +5 V 3.2 4.0 mA

+3 V 3.0 3.5 mA

T

MIN –TMAX

+5 V 4.5 mA

Power Supply Rejection Ratio

Input Offset Voltage VS = +3 V to +30 V 70 80 dB

–Input Current 0.3 0.6 µA/V
+Input Current 0.005 0.05 µA/V

TRANSISTOR COUNT 56

NOTES

1

Slew rate measurement is based on 10% to 90% rise time in the specified closed-loop gain.

2

Single supply differential gain and phase are measured with the ac coupled circuit of Figure 53.

Specifications subject to change without notice.

–4–

REV. B

AD812

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18 V

Internal Power Dissipation

2

1

Plastic (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts

Small Outline (R) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9 Watts

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±1.2 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range N, R . . . . . . . . . –65°C to +125°C

Operating Temperature Range . . . . . . . . . . . . –40°C to +85°C

Lead Temperature Range (Soldering, 10 sec) . . . . . . . +300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for device in free air: 8-lead plastic package: θJA = 90°C/Watt;

8-lead SOIC package: θJA = 150°C/Watt.

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

AD812AN –40°C to +85°C 8-Lead Plastic DIP N-8
AD812AR –40°C to +85°C 8-Lead Plastic SOIC SO-8

AD812AR-REEL 13" Reel
AD812AR-REEL7 7" Reel

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the
AD812 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for the plastic encap­sulated parts is determined by the glass transition temperature

of the plastic, about 150°C. Exceeding this limit temporarily

may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a

junction temperature of 175°C for an extended period can result

in device failure.

While the AD812 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem­perature (150 degrees) is not exceeded under all conditions. To
ensure proper operation, it is important to observe the derating
curves.

It must also be noted that in high (noninverting) gain configura­tions (with low values of gain resistor), a high level of input
overdrive can result in a large input error current, which may
result in a significant power dissipation in the input stage. This
power must be included when computing the junction tempera­ture rise due to total internal power.

2.0

8-LEAD MINI-DIP PACKAGE

1.5

TJ = +1508C

METALIZATION PHOTO

Dimensions shown in inches and (mm).

0.0783

V+

8

OUT2

7

(1.99)

–IN2

6

5 +IN2

1.0

8-LEAD SOIC PACKAGE

0.5

MAXIMUM POWER DISSIPATION – Watts

0

–50 90–40 –30 –20 –10 0 10 20 30 50 60 70 8040

AMBIENT TEMPERATURE – 8C

Figure 3. Plot of Maximum Power Dissipation vs.
Temperature

0.0539
(1.37)

4 V–

1

OUT1

2

–IN13+IN1

4

V–

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD812 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

REV. B

–5–