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AD8042 c
Datasheet
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Analog Devices AD8042 c Datasheet

Rail-to-Rail Amplifier
AD8042
FEATURES Single AD8041 and Quad AD8044 also Available Fully Specified at +3 V, +5 V, and ⴞ5 V Supplies Output Swings to Within 30 mV of Either Rail Input Voltage Range Extends 200 mV Below Ground No Phase Reversal with Inputs 0.5 V Beyond Supplies Low Power of 5.2 mA per Amplifier High Speed and Fast Settling on 5 V:
160 MHz –3 dB Bandwidth (G = +1) 200 V/␮s Slew Rate 39 ns Settling Time to 0.1%
Good Video Specifications (R
= 150 ⍀, G = +2)
L
Gain Flatness of 0.1 dB to 14 MHz
0.02% Differential Gain Error
0.04ⴗ Differential Phase Error
Low Distortion
–64 dBc Worst Harmonic @ 10 MHz
Drives 50 mA 0.5 V from Supply Rails
APPLICATIONS Video Switchers Distribution Amplifiers A/D Driver Professional Cameras CCD Imaging Systems Ultrasound Equipment (Multichannel)

PRODUCT DESCRIPTION

The AD8042 is a low power voltage feedback, high speed am­plifier designed to operate on +3 V, +5 V, or ±5 V supplies. It has true single supply capability with an input voltage range extending 200 mV below the negative rail and within 1 V of the positive rail.
G = 1 R
= 2k⍀ TO +2.5V
5V
2.5V
0V
1V
L
1␮s
Figure 1. Output Swing: Gain = –1, VS = +5 V

CONNECTION DIAGRAM

8-Lead Plastic DIP and SOIC
OUT1
–IN1
+IN1
–V
1
2
3
4
S
AD8042
+V
8
S
OUT2
7
–IN2
6
5
+IN2
The output voltage swing extends to within 30 mV of each rail, providing the maximum output dynamic range. Additionally, it features gain flatness of 0.1 dB to 14 MHz while offering differ­ential gain and phase error of 0.04% and 0.06∞ on a single 5 V supply. This makes the AD8042 useful for professional video electronics such as cameras, video switchers, or any high speed portable equipment. The AD8042’s low distortion and fast settling make it ideal for buffering single supply, high speed A/D converters.
The AD8042 offers low power supply current of 12 mA max and can run on a single 3.3 V power supply. These features are ideally suited for portable and battery-powered applications where size and power are critical.
The wide bandwidth of 160 MHz along with 200 V/ms of slew rate on a single 5 V supply make the AD8042 useful in many general­purpose, high speed applications where single supplies from
3.3 V to 12 V and dual power supplies of up to ±6 V are needed. The AD8042 is available in 8-lead plastic DIP and SOIC.
15
VS = 5V
12
G = +1
= 5pF
C
L
9
= 2k⍀ TO 2.5V
R
L
6
3
0
–3
–6
CLOSED–LOOP GAIN (dB)
–9
–12
–15
110100 500
FREQUENCY (MHz)
Figure 2. Frequency Response
REV. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2004 Analog Devices, Inc. All rights reserved.
AD8042–SPECIFICATIONS
(@TA = 25ⴗC, VS = 5 V, RL = 2 k⍀ to 2.5 V, unless otherwise noted.)
AD8042
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth, V
< 0.5 V p-p G = +1 125 160 MHz
O
Bandwidth for 0.1 dB Flatness G = +2, RL = 150 W, RF = 200 W 14 MHz Slew Rate G = –1, V Full Power Response V
= 2 V p-p 30 MHz
O
= 2 V Step 130 200 V/ms
O
Settling Time to 1% G = –1, VO = 2 V Step 26 ns Settling Time to 0.1% 39 ns
NOISE/DISTORTION PERFORMANCE
Total Harmonic Distortion f
= 5 MHz, VO = 2 V p-p, G = +2, RL = 1 kW –73 dB
C
Input Voltage Noise f = 10 kHz 15 nV/÷Hz Input Current Noise f = 10 kHz 700 fA/÷Hz Differential Gain Error (NTSC, 100 IRE) G = +2, R
G = +2, R
= 150 W to 2.5 V 0.04 0.06 %
L
= 75 W to 2.5 V 0.04 %
L
Differential Phase Error (NTSC, 100 IRE) G = +2, RL = 150 W to 2.5 V 0.06 0.12 Degrees
G = +2, RL = 75 W to 2.5 V 0.24 Degrees
Worst-Case Crosstalk f = 5 MHz, RL = 150 W to 2.5 V –63 dB
DC PERFORMANCE
Input Offset Voltage 39mV
T
MIN
to T
MAX
12 mV
Offset Drift 12 mV/∞C Input Bias Current 1.2 3.2 mA
to T
T
MIN
MAX
4.8 mA
Input Offset Current 0.2 0.5 mA Open-Loop Gain R
= 1 kW 90 100 dB
L
T
MIN
to T
MAX
90 dB
INPUT CHARACTERISTICS
Input Resistance 300 kW Input Capacitance 1.5 pF Input Common-Mode Voltage Range –0.2 to +4 V Common-Mode Rejection Ratio VCM = 0 V to 3.5 V 68 74 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing R Output Voltage Swing: R
= 10 kW to 2.5 V 0.03 to 4.97 V
L
= 1 kW to 2.5 V 0.10 to 4.9 0.05 to 4.95 V
L
Output Voltage Swing: RL = 50 W to 2.5 V 0.4 to 4.4 0.36 to 4.45 V Output Current T
MIN
to T
MAX, VOUT
= 0.5 V to 4.5 V 50 mA
Short-Circuit Current Sourcing 90 mA
Sinking 100 mA
Capacitive Load Drive G = +1 20 pF
POWER SUPPLY
Operating Range 312V Quiescent Current (Per Amplifier) 5.5 6.4 mA Power Supply Rejection Ratio VS– = 0 V to –1 V, or VS+ = +5 V to +6 V 72 80 dB
OPERATING TEMPERATURE RANGE –40 +85 ∞C
Specifications subject to change without notice.
REV. C–2–
AD8042
SPECIFICATIONS
(@TA = 25ⴗC, VS = 5 V, RL = 2 k⍀ to 1.5 V, unless otherwise noted.)
AD8042
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth, V Bandwidth for 0.1 dB Flatness G = +2, R Slew Rate G = –1, V
< 0.5 V p-p G = +1 120 140 MHz
O
= 150 W, RF = 200 W 11 MHz
L
= 2 V Step 120 170 V/ms
O
Full Power Response VO = 2 V p-p 25 MHz Settling Time to 1% G = –1, V
= 1 V Step 30 ns
O
Settling Time to 0.1% 45 ns
NOISE/DISTORTION PERFORMANCE
Total Harmonic Distortion fC = 5 MHz, VO = 2 V p-p, G = –1, RL = 100 W –56 dB Input Voltage Noise f = 10 kHz 16 nV/÷Hz Input Current Noise f = 10 kHz 500 fA/÷Hz Differential Gain Error (NTSC, 100 IRE) G = +2, R
= 75 W to 1.5 V, Input VCM = 1 V 0.10 %
R
L
Differential Phase Error (NTSC, 100 IRE) G = +2, R
= 75 W to 1.5 V, Input VCM = 1 V 0.27 Degrees
R
L
= 150 W to 1.5 V, Input VCM = 1 V 0.10 %
L
= 150 W to 1.5 V, Input VCM = 1 V 0.12 Degrees
L
Worst-Case Crosstalk f = 5 MHz, RL = 1 kW to 1.5 V –68 dB
DC PERFORMANCE
Input Offset Voltage 39mV
T
MIN
to T
MAX
12 mV
Offset Drift 12 mV/∞C Input Bias Current 1.2 3.2 mA
to T
T
MIN
MAX
4.8 mA
Input Offset Current 0.2 0.6 mA Open-Loop Gain R
= 1 kW 90 100 dB
L
T
MIN
to T
MAX
90 dB
INPUT CHARACTERISTICS
Input Resistance 300 kW Input Capacitance 1.5 pF Input Common-Mode Voltage Range –0.2 to +2 V Common-Mode Rejection Ratio VCM = 0 V to 1.5 V 66 74 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing RL = 10 kW to 1.5 V 0.03 to 2.97 V Output Voltage Swing: RL = 1 kW to 1.5 V 0.1 to 2.9 0.05 to 2.95 V Output Voltage Swing: RL = 50 W to 1.5 V 0.3 to 2.6 0.25 to 2.65 V Output Current T
MIN
to T
MAX, VOUT
= 0.5 V to 2.5 V 50 mA
Short-Circuit Current Sourcing 50 mA
Sinking 70 mA
Capacitive Load Drive G = +1 17 pF
POWER SUPPLY
Operating Range 312V Quiescent Current (Per Amplifier) 5.5 6.4 mA Power Supply Rejection Ratio VS– = 0 V to –1 V, or VS+ = +3 V to +4 V 68 80 dB
OPERATING TEMPERATURE RANGE 0 70 ∞C
Specifications subject to change without notice.
REV. C
–3–
AD8042
SPECIFICATIONS
(@TA = 25ⴗC, VS = ⴞ5 V, RL = 2 k⍀ to 0 V, unless otherwise noted.)
AD8042
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth, V Bandwidth for 0.1 dB Flatness G = +2, R
< 0.5 V p-p G = +1 125 170 MHz
O
= 150 W, RF = 200 W 18 MHz
L
Slew Rate G = –1, VO = 2 V Step 145 225 V/ms Full Power Response V Settling Time to 1% G = –1, V
= 2 V p-p 35 MHz
O
= 2 V Step 22 ns
O
Settling Time to 0.1% 32 ns
NOISE/DISTORTION PERFORMANCE
Total Harmonic Distortion f
= 5 MHz, VO = 2 V p-p, G = +2, RL = 1 kW –78 dB
C
Input Voltage Noise f = 10 kHz 15 nV/÷Hz Input Current Noise f = 10 kHz 700 fA/÷Hz Differential Gain Error (NTSC, 100 IRE) G = +2, R
G = +2, R
Differential Phase Error (NTSC, 100 IRE) G = +2, R
G = +2, R
= 150 W 0.02 0.05 %
L
= 75 W 0.02 %
L
= 150 W 0.04 0.10 Degrees
L
= 75 W 0.12 Degrees
L
Worst-Case Crosstalk f = 5 MHz, RL = 150 W –63 dB
DC PERFORMANCE
Input Offset Voltage 3 9.8 mV
T
MIN
to T
MAX
14 mV
Offset Drift 12 mV/∞C Input Bias Current 1.2 3.2 mA
to T
T
MIN
MAX
4.8 mA
Input Offset Current 0.2 0.6 mA Open-Loop Gain R
= 1 kW 90 94 dB
L
T
MIN
to T
MAX
86 dB
INPUT CHARACTERISTICS
Input Resistance 300 kW Input Capacitance 1.5 pF Input Common-Mode Voltage Range –5.2 to +4 V Common-Mode Rejection Ratio VCM = –5 V to +3.5 V 66 74 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing RL = 10 kW –4.97 to +4.97 V Output Voltage Swing RL = 1 kW –4.8 to +4.8 –4.9 to +4.9 V Output Voltage Swing R Output Current T
= 50 W –4 to +3.2 –4.2 to +3.5 V
L
MIN
to T
MAX, VOUT
= –4.5 V to +4.5 V 50 mA
Short-Circuit Current Sourcing 100 mA
Sinking 100 mA
Capacitive Load Drive G = +1 25 pF
POWER SUPPLY
Operating Range 312V Quiescent Current (Per Amplifier) 67mA Power Supply Rejection Ratio VS– = –5 V to –6 V, or VS+ = +5 V to +6 V 68 80 dB
OPERATING TEMPERATURE RANGE –40 +85 ∞C
Specifications subject to change without notice.
REV. C–4–
AD8042

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
1
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 0.9 W
Input Voltage (Common Mode) . . . . . . . . . . . . . ±V
± 0.5 V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±3.4 V
Output Short-Circuit Duration
Observe Power Derating Curves
Storage Temperature Range (N, R) . . . . . . . –65∞C to +125∞C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300∞C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
Specification is for the device in free air: 8-Lead Plastic DIP Package: qJA = 90∞C/W 8-Lead SOIC Package: qJA = 155∞C/W

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8042 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic—approximately 150∞C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175∞C for an extended period can result in device failure.
While the AD8042 is internally short-circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (150∞C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.
2.0
8-LEAD PLASTIC-DIP PACKAGE
TJ = 150ⴗC
1.5
1.0
0.5
MAXIMUM POWER DISSIPATION (W)
0
–50 90–40 –30 –20 –10 0 10 20 30 50 60 70 8040
8-LEAD SOIC PACKAGE
AMBIENT TEMPERATURE (ⴗC)
Figure 3. Maximum Power Dissipation vs. Temperature

ORDERING GUIDE

Temperature Package Package
Model Range Description Option
AD8042AN –40∞C to +85∞C 8-Lead DIP N-8 AD8042AR –40∞C to +85∞C 8-Lead SOIC SO-8 AD8042AR-REEL –40∞C to +85∞C 8-Lead SOIC 13" REEL SO-8 AD8042AR-REEL7 –40∞C to +85∞C 8-Lead SOIC 7" REEL SO-8 AD8042ARZ* –40∞C to +85∞C 8-Lead SOIC SO-8 AD8042ARZ-REEL* –40∞C to +85∞C 8-Lead SOIC 13" REEL SO-8 AD8042ARZ-REEL7* –40∞C to +85∞C 8-Lead SOIC 7" REEL SO-8 AD8042ACHIPS DIE
*Z = Pb-free part
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4,000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8042 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
REV. C
–5–
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