ANALOG DEVICES AD8039-EP Service Manual

Low Power, 350 MHz
V

FEATURES

Low power: 1 mA quiescent current per amplifier High speed
−3 dB bandwidth (G = +1): 350 MHz
Slew rate: 425 V/μs Low cost Low noise
8 nV/√Hz at 100 kHz
600 fA/√Hz at 100 kHz Low input bias current: 750 nA maximum Low distortion
−90 dB SFDR at 1 MHz
−65 dB SFDR at 5 MHz Wide supply range: 3 V to 12 V Small packaging: 8-lead SOIC Supports defense and aerospace applications (AQEC standard) Extended temperature range: −55°C to +105°C Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request

APPLICATIONS

Battery-powered instrumentation Filters ADC drivers Level shifting Buffering Photo multipliers
Voltage Feedback Amplifier
AD8039-EP

FUNCTIONAL BLOCK DIAGRAM

AD8039-EP
1
OUT1
2
–IN1 +IN1
3
–V
4
S
Figure 1. 8-Lead SOIC_N
24
G = +10
21 18
15
G = +5
12
9
G = +2
GAIN (dB)
6 3
G = +1
0
–3 –6
FREQUENCY (MHz)
Figure 2. Small Signal Frequency Response for Various Gains,
= 500 mV p-p, VS = ±5 V
V
OUT
8
+V
S
V
7
OUT2
–IN2
6
+IN2
5
09557-001
10000.1 1 10 100
9557-002

GENERAL DESCRIPTION

The AD8039-EP dual amplifier is a high speed (350 MHz) voltage feedback amplifier with an exceptionally low quiescent current of 1.0 mA per amplifier typical (1.5 mA maximum). Despite its low power and low cost, the amplifier provides excellent overall performance. Additionally, it offers a high slew rate of 425 V/μs and a low input offset voltage of 3 mV maximum.
The Analog Devices, Inc., proprietary XFCB process allows low noise operation (8 nV/√Hz and 600 fA/√Hz) at extremely low quiescent currents. Given its wide supply voltage range (3 V to 12 V), wide bandwidth, and small packaging, the AD8039-EP amplifier is designed to work in a variety of applications where power and space are at a premium.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
The AD8039-EP amplifier has a wide input common-mode range of 1 V from either rail and swings to within 1 V of each rail on the output. This amplifier is optimized for driving capacitive loads up to 20 pF. If driving larger capacitive loads, a small series resistor is needed to avoid excessive peaking or overshoot.
The AD8039-EP amplifier is available in an 8-lead SOIC package and is rated to work over the extended temperature range of
−55°C to +105°C. Additional application and technical information can be found in
the AD8038/AD8039 data sheet.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2011 Analog Devices, Inc. All rights reserved.
AD8039-EP

TABLE OF CONTENTS

Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3

REVISION HISTORY

2/11—Revision 0: Initial Version
Absolute Maximum Ratings ............................................................5
Maximum Power Dissipation ......................................................5
Output Short Circuit .....................................................................5
ESD Caution...................................................................................5
Typical Performance Characteristics ..............................................6
Outline Dimensions ..........................................................................7
Ordering Guide .............................................................................7
Rev. 0 | Page 2 of 8
AD8039-EP

SPECIFICATIONS

TA = 25°C, VS = ±5 V, RL = 2 kΩ, gain = +1, unless otherwise noted.
Table 1.
Parameter Test Conditions/Comments Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth G = +1, V G = +2, V G = +1, V Bandwidth for 0.1 dB Flatness G = +2, V Slew Rate G = +1, V T
MIN
Overdrive Recovery Time G = +2, 1 V overdrive 50 ns Settling Time to 0.1% G = +2, V
NOISE/HARMONIC PERFORMANCE
SFDR
Second Harmonic fC = 1 MHz, V Third Harmonic fC = 1 MHz, V Second Harmonic fC = 5 MHz, V
Third Harmonic fC = 5 MHz, V Crosstalk, Output-to-Output f = 5 MHz, G = +2 −70 dB Input Voltage Noise f = 100 kHz 8 nV/√Hz Input Current Noise f = 100 kHz 600 fA/√Hz
DC PERFORMANCE
Input Offset Voltage TA = 25°C 0.5 3 mV T
MIN
Input Offset Voltage Drift 4.5 µV/°C Input Bias Current TA = 25°C 400 750 nA T
MIN
Input Bias Current Drift 3 nA/°C Input Offset Current ±25 nA Open-Loop Gain V
OUT
INPUT CHARACTERISTICS
Input Resistance 10 MΩ Input Capacitance 2 pF Input Common-Mode Voltage Range RL = 1 kΩ ±4 V Common-Mode Rejection Ratio VCM = ±2.5 V, TA = 25°C 61 67 dB V
= ±2.5 V, T
CM
OUTPUT CHARACTERISTICS
DC Output Voltage Swing RL = 2 kΩ, saturated output ±4 V Capacitive Load Drive 30% overshoot, G = +2 20 pF
POWER SUPPLY
Operating Range 3 12 V Quiescent Current per Amplifier TA = 25°C 1.0 1.5 mA T
MIN
Power Supply Rejection Ratio
−Supply TA = 25°C 71 77 dB
T
MIN
+Supply TA = 25°C 64 70 dB T
MIN
= 0.5 V p-p, T
OUT
= 0.5 V p-p 175 MHz
OUT
= 2 V p-p 100 MHz
OUT
= 0.2 V p-p 45 MHz
OUT
= 2 V step, RL = 2 kΩ 400 425 V/µs
OUT
to T
300 325 V/µs
MAX
= 2 V step 18 ns
OUT
= 2 V p-p, RL = 2 kΩ −90 dBc
OUT
= 2 V p-p, RL = 2 kΩ −92 dBc
OUT
= 2 V p-p, RL = 2 kΩ −65 dBc
OUT
= 2 V p-p, RL = 2 kΩ −70 dBc
OUT
to T
4.5 mV
MAX
to T
2.0 µA
MAX
MIN
to T
300 350 MHz
MAX
= ±2.5 V 70 dB
to T
MIN
to T
2.6 mA
MAX
to T
63 dB
MAX
to T
63 dB
MAX
Rev. 0 | Page 3 of 8
59 dB
MAX
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