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AD8038 39 f
Datasheet
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Analog Devices AD8038 39 f Datasheet

Low Power 350 MHz
8
7
6
5
1
2
3
4
NC
–IN
+IN
DISABLE
+V
S
V
OUT
NC–V
S
AD8038
NC = NO CONNECT
Voltage Feedback Amplifiers
AD8038/AD8039
FEATURES Low Power
1 mA Supply Current/Amp
High Speed
350 MHz, –3 dB Bandwidth (G = +1)
425 V/␮s Slew Rate Low Cost Low Noise
8 nV/√Hz @ 100 kHz
600 fA/√Hz @ 100 kHz Low Input Bias Current: 750 nA Max Low Distortion
–90 dB SFDR @ 1 MHz
–65 dB SFDR @ 5 MHz Wide Supply Range: 3 V to 12 V Small Packaging: SOT-23-8, SC70-5, and SOIC-8
APPLICATIONS Battery-Powered Instrumentation Filters A/D Drivers Level Shifting Buffering High Density PC Boards Photo Multipliers

PRODUCT DESCRIPTION

The AD8038 (single) and AD8039 (dual) amplifiers are high speed (350 MHz) voltage feedback amplifiers with an exception­ally low quiescent current of 1.0 mA/amplifier typical (1.5 mA max). The AD8038 single amplifier in the SOIC-8 package has a dis­able feature. Despite being low power and low cost, the amplifier provides excellent overall performance. Additionally, it offers ahigh slew rate of 425 V/µs and low input offset voltage of 3mVmax.
ADI’s proprietary XFCB process allows low noise operation (8 nV/√Hz and 600 fA/√Hz) at extremely low quiescent currents. Given a wide supply voltage range (3 V to 12 V), wide band­width, and small packaging, the AD8038 and AD8039 amplifiers are designed to work in a variety of applications where power and space are at a premium.
The AD8038 and AD8039 amplifiers have a wide input common­mode range of 1 V from either rail and will swing within 1 V of each rail on the output. These amplifiers are optimized for driving

CONNECTION DIAGRAMS

SOIC-8 (R)
SC70-5 (KS)
AD8038
V
1
OUT
2
–V
S
3
+IN
+–
+V
5
S
–IN
4
SOIC-8 (R) and SOT-23-8 (RT)
V
OUT1
–IN1
+IN1
–V
AD8039
1
2
3
4
S
8
+V
S
7
V
OUT2
6
–IN2
5
+IN2
capacitive loads up to 15 pF. If driving larger capacitive loads, a small series resistor is needed to avoid excessive peaking or overshoot.
The AD8039 amplifier is the only dual, low power, high
speed amplifier available in a tiny SOT-23-8 package, and the single AD8038 is available in both a SOIC-8 and an SC70-5 package. These amps are rated to work over the industrial temperature range of –40°C to +85°C.
24
G = +10
21
18
15
G = +5
12
9
G = +2
GAIN – dB
6
3
G = +1
0
–3
–6
0.1 1000110100 FREQUENCY – MHz
REV. F
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
Figure 1. Small Signal Frequency Response for Various Gains, V
= 500 mV p-p, VS = ±5 V
OUT
AD8038/AD8039–SPECIFICATIONS
(TA = 25ⴗC, VS = ⴞ5 V, RL = 2 k⍀, Gain = +1, unless otherwise noted.)
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth G = +1, VO = 0.5 V p-p 300 350 MHz
G = +2, V
G = +1, V Bandwidth for 0.1 dB Flatness G = +2, V Slew Rate G = +1, V
= 0.5 V p-p 175 MHz
O
= 2 V p-p 100 MHz
O
= 0.2 V p-p 45 MHz
O
= 2 V Step, RL = 2 kΩ 400 425 V/µs
O
Overdrive Recovery Time G = +2, 1 V Overdrive 50 ns Settling Time to 0.1% G = +2, VO = 2 V Step 18 ns
NOISE/HARMONIC PERFORMANCE
SFDR
Second Harmonic f
= 1 MHz, VO = 2 V p-p, RL = 2 kΩ –90 dBc
C
Third Harmonic fC = 1 MHz, VO = 2 V p-p, RL = 2 kΩ –92 dBc Second Harmonic f Third Harmonic f
= 5 MHz, VO = 2 V p-p, RL = 2 kΩ –65 dBc
C
= 5 MHz, VO = 2 V p-p, RL = 2 kΩ –70 dBc
C
Crosstalk, Output-to-Output (AD8039) f = 5 MHz, G = +2 –70 dB Input Voltage Noise f = 100 kHz 8 nV/√Hz Input Current Noise f = 100 kHz 600 fA/√Hz
DC PERFORMANCE
Input Offset Voltage 0.5 3 mV Input Offset Voltage Drift 4.5 µV/°C Input Bias Current 400 750 nA Input Bias Current Drift 3nA/°C Input Offset Current 25 ± nA Open-Loop Gain VO = ±2.5 V 70 dB
INPUT CHARACTERISTICS
Input Resistance 10 MΩ Input Capacitance 2pF Input Common-Mode Voltage Range R Common-Mode Rejection Ratio V
= 1 kΩ±4V
L
= ±2.5 V 61 67 dB
CM
OUTPUT CHARACTERISTICS
DC Output Voltage Swing RL = 2 kΩ, Saturated Output ±4V Capacitive Load Drive 30% Overshoot, G = +2 20 pF
POWER SUPPLY
Operating Range 3.0 12 V Quiescent Current per Amplifier 1.0 1.5 mA Power Supply Rejection Ratio – Supply –71 –77 dB
+ Supply –64 –70 dB
POWER-DOWN DISABLE*
Turn-On Time 180 ns Turn-Off Time 700 ns Disable Voltage—Part is OFF +V Disable Voltage—Part is ON +V
– 4.5 V
S
– 2.5 V
S
Disabled Quiescent Current 0.2 mA Disabled In/Out Isolation f = 1 MHz –60 dB
*Only available in AD8038 SOIC-8 package.
Specifications subject to change without notice.
–2–
REV. F
AD8038/AD8039
SPECIFICATIONS
(TA = 25ⴗC, VS = 5 V, RL = 2 k⍀ to VS/2, Gain = +1, unless otherwise noted.)
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth G = +1, VO = 0.2 V p-p 275 300 MHz
G = +2, V
G = +1, V Bandwidth for 0.1 dB Flatness G = +2, V Slew Rate G = +1, V
= 0.2 V p-p 150 MHz
O
= 2 V p-p 30 MHz
O
= 0.2 V p-p 45 MHz
O
= 2 V Step, RL = 2 kΩ 340 365 V/µs
O
Overdrive Recovery Time G = +2, 1 V Overdrive 50 ns Settling Time to 0.1% G = +2, VO = 2 V Step 18 ns
NOISE/HARMONIC PERFORMANCE
SFDR
Second Harmonic f Third Harmonic f Second Harmonic f
= 1 MHz, VO = 2 V p-p, RL = 2 kΩ –82 dBc
C
= 1 MHz, VO = 2 V p-p, RL = 2 kΩ –79 dBc
C
= 5 MHz, VO = 2 V p-p, RL = 2 kΩ –60 dBc
C
Third Harmonic fC = 5 MHz, VO = 2 V p-p, RL = 2 kΩ –67 dBc
Crosstalk, Output-to-Output f = 5 MHz, G = +2 –70 dB Input Voltage Noise f = 100 kHz 8 nV/√Hz Input Current Noise f = 100 kHz 600 fA/√Hz
DC PERFORMANCE
Input Offset Voltage 0.8 3 mV Input Offset Voltage Drift 3 µV/°C Input Bias Current 400 750 nA Input Bias Current Drift 3nA/°C Input Offset Current 30 ± nA Open-Loop Gain VO = ±2.5 V 70 dB
INPUT CHARACTERISTICS
Input Resistance 10 MΩ Input Capacitance 2pF Input Common-Mode Voltage Range R
= 1 kΩ 1.0–4.0 V
L
Common-Mode Rejection Ratio VCM = ±1 V 59 65 dB
OUTPUT CHARACTERISTICS
DC Output Voltage Swing RL = 2 kΩ, Saturated Output 0.9–4.1 V Capacitive Load Drive 30% Overshoot 20 pF
POWER SUPPLY
Operating Range 3 12 V Quiescent Current per Amplifier 0.9 1.5 mA Power Supply Rejection Ratio –65 –71 dB
POWER-DOWN DISABLE*
Turn-On Time 210 ns Turn-Off Time 700 ns Disable Voltage—Part is OFF +V Disable Voltage—Part is ON +V
– 4.5 V
S
– 2.5 V
S
Disabled Quiescent Current 0.2 mA Disabled In/Out Isolation f = 1 MHz –60 dB
*Only available in AD8038 SOIC-8 package.
Specifications subject to change without notice.
REV. F
–3–
AD8038/AD8039

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 2
Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . ±4 V
Storage Temperature . . . . . . . . . . . . . . . . . . . . –65°C to +125°C
Operating Temperature Range . . . . . . . . . . . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . . . 300°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

MAXIMUM POWER DISSIPATION

The maximum safe power dissipation in the AD8038/AD8039 package is limited by the associated rise in junction temperature
) on the die. The plastic encapsulating the die will locally reach
(T
J
the junction temperature. At approximately 150°C, which is the glass transition temperature, the plastic will change its properties. Even temporarily exceeding this temperature limit may change the stresses that the package exerts on the die, permanently shifting the parametric performance of the AD8038/AD8039. Exceeding a junction temperature of 175°C for an extended period of time can result in changes in the silicon devices, potentially causing failure.
The still-air thermal properties of the package and PCB (␪ ambient temperature (T
) determine the junction temperature of the die. The junction
(P
D
), and total power dissipated in the package
A
),
JA
temperature can be calculated as follows:
TT P
=+ ×
ADAJ
θ
()
J
The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. The quiescent power is the voltage between the supply pins (V ing the load (R
/2 ⫻ I
is V
S
in the load (V
) multiplied by the quiescent current (IS). Assum-
S
) is referenced to midsupply, then the total drive power
L
some of which is dissipated in the package and some
OUT,
⫻ I
OUT
). The difference between the total drive
OUT
power and the load power is the drive power dissipated in the package.
= quiescent power + (total drive power – load power)
P
D
PVI V/V/R – V /R
=×
[]
DSS S OUT L OUT L
+
[]
×
2
()
()
2
[]

ORDERING GUIDE

2.0
1.5
SOIC-8
1.0
0.5
MAXIMUM POWER DISSIPATION – W
0 –55
SOT-23-8
SC70-5
–25 5 35 65 95 125
AMBIENT TEMPERATURE – ⴗC
Figure 2. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
RMS output voltages should be considered. If RL is referenced to VS–,as
⫻ I
in single-supply operation, then the total drive power is V
S
OUT
.
If the rms signal levels are indeterminate, consider the worst case, when V
= VS /4 for RL to midsupply:
OUT
PVI V/4 /R
=×
()
DSS S2L
+
()
In single-supply operation with RL referenced to VS–, worst case is
= VS /2.
V
OUT
Airflow will increase heat dissipation, effectively reducing ␪
. Also,
JA
more metal directly in contact with the package leads from metal traces, through-holes, ground, and power planes will reduce the ␪
.
JA
Care must be taken to minimize parasitic capacitances at the input leads of high speed op amps as discussed in the board layout section.
Figure 2 shows the maximum safe power dissipation in the package versus the ambient temperature for the SOIC-8 (125°C/W), SC70-5 (210°C/W), and SOT-23-8 (160°C/W) package on a JEDEC standard 4-layer board. ␪
values are approximations.
JA

OUTPUT SHORT CIRCUIT

Shorting the output to ground or drawing excessive current from the AD8038/AD8039 will likely cause a catastrophic failure.
Model Temperature Range Package Description Package Outline Branding Information
AD8038AR –40°C to +85°C 8-Lead SOIC R-8 AD8038AR-REEL –40°C to +85°C 8-Lead SOIC R-8 AD8038AR-REEL7 –40°C to +85°C 8-Lead SOIC R-8 AD8038AKS-R2 –40°C to +85°C 5-Lead SC70 KS-5 HUA AD8038AKS-REEL –40°C to +85°C 5-Lead SC70 KS-5 HUA AD8038AKS-REEL7 –40°C to +85°C 5-Lead SC70 KS-5 HUA AD8039AR –40°C to +85°C 8-Lead SOIC R-8 AD8039AR-REEL –40°C to +85°C 8-Lead SOIC R-8 AD8039AR-REEL7 –40°C to +85°C 8-Lead SOIC R-8 AD8039ART-R2 –40°C to +85°C 8-Lead SOT-23 RT-8 HYA AD8039ART-REEL –40°C to +85°C 8-Lead SOT-23 RT-8 HYA AD8039ART-REEL7 –40°C to +85°C 8-Lead SOT-23 RT-8 HYA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8038/AD8039 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
–4–
REV. F
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