1 pA typical input bias current
Very low cost
High speed
80 MHz, −3 dB bandwidth (G = +1)
80 V/μs slew rate (G = +2)
Low noise
11 nV/√Hz (f = 100 kHz)
0.7 fA/√Hz (f = 100 kHz)
Wide supply voltage range: 5 V to 24 V
Low offset voltage: 1 mV typical
Single-supply and rail-to-rail output
High common-mode rejection ratio: −100 dB
Low power: 3.3 mA/amplifier typical supply current
No phase reversal
Small packaging: 8-lead SOIC, 8-lead SOT-23, and 5-lead SC70
APPLICATIONS
Instrumentation
Filters
Level shifting
Buffering
GENERAL DESCRIPTION
The AD8033/AD8034 FastFET™ amplifiers are voltage feedback
amplifiers with FET inputs, offering ease of use and excellent
performance. The AD8033 is a single amplifier and the AD8034
is a dual amplifier. The AD8033/AD8034 FastFET op amps in
Analog Devices, Inc., proprietary XFCB process offer significant
performance improvements over other low cost FET amps, such
as low noise (11 nV/√Hz and 0.7 fA/√Hz) and high speed (80 MHz
bandwidth and 80 V/µs slew rate).
With a wide supply voltage range from 5 V to 24 V and fully
operational on a single supply, the AD8033/AD8034 amplifiers
work in more applications than similarly priced FET input
amplifiers. In addition, the AD8033/AD8034 have rail-to-rail
outputs for added versatility.
Despite their low cost, the amplifiers provide excellent overall
performance. They offer a high common-mode rejection of
−100 dB, low input offset voltage of 2 mV maximum, and low
noise of 11 nV/√Hz.
The AD8033/AD8034 amplifiers only draw 3.3 mA/amplifier of
quiescent current while having the capability of delivering up to
40 mA of load current.
The AD8033 is available in a small package 8-lead SOIC and a
small package 5-lead SC70. The AD8034 is also available in a
small package 8-lead SOIC and a small package 8-lead SOT-23.
They are rated to work over the industrial temperature range of
−40°C to +85°C without a premium over commercial grade
products.
8
V
OUT1
–IN1
+IN1
–V
1
NC
7
+V
V
6
NC
5
S
S
OUT
02924-001
1
2
3
4
AD8034
G = –1
10
FREQUENCY (MHz)
V
OUT
–V
+IN
8
7
6
5
S
+V
V
–IN2
+IN2
1
2
3
S
OUT2
V
OUT
1000.1
AD8033
02924-003
= 200mV p-p
G = +1
Figure 4. Small Signal Frequency Response
5
4
1000
+V
–IN
S
02924-004
2924-002
Rev. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
TA = 25°C, VS = ±5 V, RL = 1 kΩ, gain = +2, unless otherwise noted.
Table 1.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth G = +1, V
G = +2, V
G = +2, V
Input Overdrive Recovery Time −6 V to +6 V input 135 ns
Output Overdrive Recovery Time −3 V to +3 V input, G = +2 135 ns
Slew Rate (25% to 75%) G = +2, V
Settling Time to 0.1% G = +2, V
G = +2, V
NOISE/HARMONIC PERFORMANCE
Distortion fC = 1 MHz, V
Second Harmonic RL = 500 Ω −82 dBc
R
Third Harmonic RL = 500 Ω −70 dBc
R
Crosstalk, Output-to-Output f = 1 MHz, G = +2 −86 dB
Input Voltage Noise f = 100 kHz 11 nV/√Hz
Input Current Noise f = 100 kHz 0.7 fA/√Hz
DC PERFORMANCE
Input Offset Voltage VCM = 0 V 1 2 mV
T
Input Offset Voltage Match 2.5 mV
Input Offset Voltage Drift 4 27 V/°C
Input Bias Current 1.5 11 pA
T
Open-Loop Gain V
INPUT CHARACTERISTICS
Common-Mode Input Impedance 1000||2.3 GΩ||pF
Differential Input Impedance 1000||1.7 GΩ||pF
Input Common-Mode Voltage Range
FET Input Range −5.0 to +2.2 V
Common-Mode Rejection Ratio VCM = −3 V to +1.5 V −89 −100 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing ±4.75 ±4.95 V
Output Short-Circuit Current 40 mA
Capacitive Load Drive 30% overshoot, G = +1, V
POWER SUPPLY
Operating Range 5 24 V
Quiescent Current per Amplifier 3.3 3.5 mA
Power Supply Rejection Ratio VS = ±2 V −90 −100 dB
= 1 kΩ −85 dBc
L
= 1 kΩ −81 dBc
L
MIN
MIN
OUT
= 0.2 V p-p 65 80 MHz
OUT
= 0.2 V p-p 30 MHz
OUT
= 2 V p-p 21 MHz
OUT
= 4 V step 55 80 V/µs
OUT
= 2 V step 95 ns
OUT
= 8 V step 225 ns
OUT
= 2 V p-p
OUT
− T
3.5 mV
MAX
− T
50 pA
MAX
= ± 3 V 89 92 dB
= 400 mV p-p 35 pF
OUT
Rev. D | Page 3 of 24
AD8033/AD8034
www.BDTIC.com/ADI
TA = 25°C, VS = 5 V, RL = 1 k, gain = +2, unless otherwise noted.
Table 2.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth G = +1, V
G = +2, V
G = +2, V
Input Overdrive Recovery Time −3 V to +3 V input 180 ns
Output Overdrive Recovery Time −1.5 V to +1.5 V input, G = +2 200 ns
Slew Rate (25% to 75%) G = +2, V
Settling Time to 0.1% G = +2, V
NOISE/HARMONIC PERFORMANCE
Distortion fC = 1 MHz, V
Second Harmonic RL = 500 Ω −80 dBc
R
= 1 kΩ −84 dBc
L
Third Harmonic RL = 500 Ω −70 dBc
R
= 1 kΩ −80 dBc
L
Crosstalk, Output to Output f = 1 MHz, G = +2 −86 dB
Input Voltage Noise f = 100 kHz 11 nV/√Hz
Input Current Noise f = 100 kHz 0.7 fA/√Hz
DC PERFORMANCE
Input Offset Voltage VCM = 0 V 1 2 mV
T
MIN
Input Offset Voltage Match 2.5 mV
Input Offset Voltage Drift 4 30 V/°C
Input Bias Current 1 10 pA
T
Open-Loop Gain V
MIN
OUT
INPUT CHARACTERISTICS
Common-Mode Input Impedance 1000||2.3 GΩ||pF
Differential Input Impedance 1000||1.7 GΩ||pF
Input Common-Mode Voltage Range
FET Input Range 0 to 2.0 V
Common-Mode Rejection Ratio VCM = 1.0 V to 2.5 V −80 −100 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing RL = 1 kΩ 0.16 to 4.83 0.04 to 4.95 V
Output Short-Circuit Current 30 mA
Capacitive Load Drive 30% overshoot, G = +1, V
POWER SUPPLY
Operating Range 5 24 V
Quiescent Current per Amplifier 3.3 3.5 mA
Power Supply Rejection Ratio VS = ±1 V −80 −100 dB
= 0.2 V p-p 70 80 MHz
OUT
= 0.2 V p-p 32 MHz
OUT
= 2 V p-p 21 MHz
OUT
= 4 V step 55 70 V/s
OUT
= 2 V step 100 ns
OUT
= 2 V p-p
OUT
− T
3.5 mV
MAX
− T
50 pA
MAX
= 0 V to 3 V 87 92 dB
= 400 mV p-p 25 pF
OUT
Rev. D | Page 4 of 24
AD8033/AD8034
www.BDTIC.com/ADI
TA = 25°C, VS = ±12 V, RL = 1 k, gain = +2, unless otherwise noted.
Table 3.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth G = +1, V
G = +2, V
G = +2, V
Input Overdrive Recovery Time −13 V to +13 V input 100 ns
Output Overdrive Recovery Time −6.5 V to +6.5 V input, G = +2 100 ns
Slew Rate (25% to 75%) G = +2, V
Settling Time to 0.1% G = +2, V
G = +2, V
NOISE/HARMONIC PERFORMANCE
Distortion fC = 1 MHz, V
Second Harmonic RL = 500 Ω −80 dBc
R
= 1 kΩ −82 dBc
L
Third Harmonic RL = 500 Ω −70 dBc
R
= 1 kΩ −82 dBc
L
Crosstalk, Output to Output f = 1 MHz, G = +2 −86 dB
Input Voltage Noise f = 100 kHz 11 nV/√Hz
Input Current Noise f = 100 kHz 0.7 fA/√Hz
DC PERFORMANCE
Input Offset Voltage VCM = 0 V 1 2 mV
T
MIN
Input Offset Voltage Match 2.5 mV
Input Offset Voltage Drift 4 24 V/°C
Input Bias Current 2 12 pA
T
Open-Loop Gain V
MIN
OUT
INPUT CHARACTERISTICS
Common-Mode Input Impedance 1000||2.3 GΩ||pF
Differential Input Impedance 1000||1.7 GΩ||pF
Input Common-Mode Voltage Range
FET Input Range −12.0 to +9.0 V
Common-Mode Rejection Ratio VCM = ±5 V −92 −100 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing ±11.52 ±11.84 V
Output Short-Circuit Current 60 mA
Capacitive Load Drive 30% overshoot, G = +1 35 pF
POWER SUPPLY
Operating Range 5 24 V
Quiescent Current per Amplifier 3.3 3.5 mA
Power Supply Rejection Ratio VS = ±2 V −85 −100 dB
= 0.2 V p-p 65 80 MHz
OUT
= 0.2 V p-p 30 MHz
OUT
= 2 V p-p 21 MHz
OUT
= 4 V step 55 80 V/s
OUT
= 2 V step 90 ns
OUT
= 10 V step 225 ns
OUT
= 2 V p-p
OUT
− T
3.5 mV
MAX
− T
50 pA
MAX
= ±8 V 88 96 dB
Rev. D | Page 5 of 24
AD8033/AD8034
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage 26.4 V
Power Dissipation See Figure 5
Common-Mode Input Voltage 26.4 V
Differential Input Voltage 1.4 V
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature (Soldering 10 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8033/AD8034
packages is limited by the associated rise in junction temperature
(T
) on the die. The plastic that encapsulates the die locally
J
reaches the junction temperature. At approximately 150°C,
which is the glass transition temperature, the plastic changes its
properties. Even temporarily exceeding this temperature limit
can change the stresses that the package exerts on the die,
permanently shifting the parametric performance of the AD8033/
AD8034. Exceeding a junction temperature of 175°C for an
extended period can result in changes in silicon devices, potentially
causing failure.
OUT
),
JA
)
S
,
The still-air thermal properties of the package and PCB (θ
ambient temperature (T
package (P
) determine the junction temperature of the die.
D
), and the total power dissipated in the
A
The junction temperature can be calculated as
T
= TA + (PD × θJA)
J
P
is the sum of the quiescent power dissipation and the power
D
dissipated in the package due to the load drive for all outputs.
The quiescent power is the voltage between the supply pins (V
times the quiescent current (I
referenced to midsupply, the total drive power is V
). Assuming the load (RL) is
S
/2 × I
S
some of which is dissipated in the package and some in the load
(V
× I
OUT
). The difference between the total drive power and
OUT
the load power is the drive power dissipated in the package
= Quiescent Power + (Total Drive Power − Load Power)
P
D
= [VS × IS] + [(VS/2) × (V
P
D
OUT/RL
)] − [V
RMS output voltages should be considered. If R
, as in single-supply operation, the total drive power is
to −V
S
V
× I
.
S
OUT
2
/RL]
OUT
is referenced
L
If the rms signal levels are indeterminate, consider the worst case,
when V
In single-supply operation with R
is V
= VS/4 for RL to midsupply
OUT
= (VS × IS) + (VS/4)2/RL
P
D
referenced to VS−, worst case
L
= VS/2.
OUT
2.0
1.5
SOT-23-8
1.0
SC70-5
0.5
MAXIMUM POW ER DISSIPATION (W )
0
–60–20–401006080
Figure 5. Maximum Power Dissipation vs.
Ambient Temperature for a 4-Layer Board
SOIC-8
40020
AMBIENT TEM PERATURE (°C)
02924-005
Airflow increases heat dissipation, effectively reducing θJA. In
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes
reduces the θ
. Care must be taken to minimize parasitic
JA
capacitances at the input leads of high speed op amps as discussed
in the Layout, Grounding, and Bypassing Considerations section.
Figure 5 shows the maximum power dissipation in the package
vs. the ambient temperature for the 8-lead SOIC (125°C/W),
5-lead SC70 (210°C/W), and 8-lead SOT-23 (160°C/W) packages
on a JEDEC standard 4-layer board. θ
values are approximations.
JA
OUTPUT SHORT CIRCUIT
Shorting the output to ground or drawing excessive current for
the AD8033/AD8034 will likely cause catastrophic failure.
ESD CAUTION
Rev. D | Page 6 of 24
AD8033/AD8034
www.BDTIC.com/ADI
TYPICAL PERFORMANCE CHARACTERISTICS
Default conditions: VS = ±5 V, CL = 5 pF, RL = 1 k, TA = 25°C.
24
G = +10
21
18
G = +5
15
12
9
G = +2
6
GAIN (dB)
3
0
–3
–6
–9
G = –1
10
FREQUENCY (MHz)
V
= 200mV p-p
OUT
1000.11
G = +1
Figure 6. Small Signal Frequency Response for Various Gains
1
0
–1
–2
–3
GAIN (dB)
–4
–5
G = +1
= 200mV p-p
V
OUT
–6
FREQUENCY (MHz )
V
S
VS= +5V
=±5V
VS= ±12V
Figure 7. Small Signal Frequency Response for Various Supplies
(See Figure 44)
2
G = +1
= 2V
p-p
V
OUT
1
0
–1
–2
GAIN (dB)
–3
–4
–5
–6
VS=±5V
= +5V
V
S
FREQUE NCY (MHz )
VS= ±12V
10
Figure 8. Large Signal Frequency Response for Various Supplies
(See Figure 44)
1000
02924-006
1000.1110
02924-007
1000.11
02924-008
8
G = +2
7
V
= 0.2V p-p
6
5
4
GAIN (dB)
3
2
1
0
V
= 1V p-p
OUT
V
= 4V p-p
OUT
V
= 2V p-p
OUT
FREQUENCY (MHz )
OUT
1000.1110
02924-009
Figure 9. Frequency Response for Various Output Amplitudes (See Figure 45)
8
7
6
5
V
4
GAIN (dB)
3
2
1
G = +2
V
= 200mV p-p
OUT
0
FREQUENCY (MHz)
S
VS=
VS= +5V
=±5V
±12V
1000.1110
02924-010
Figure 10. Small Signal Frequency Response for Various Supplies
(See Figure 45)
7
6
=±5V
V
5
4
3
GAIN (dB)
2
1
G = +2
V
= 2V p-p
OUT
0
S
V
= +5V
S
FREQUENCY (MHz )
V
= ±12V
S
1000.1110
02924-011
Figure 11. Large Signal Frequency Response for Various Supplies
(See Figure 45)
Rev. D | Page 7 of 24
AD8033/AD8034
(
www.BDTIC.com/ADI
8
V
= 200mV p-p
OUT
G = +1
6
4
2
0
GAIN (dB)
–2
–4
–6
110
FREQUENCY (MHz)
CL= 100pF
R
SNUB
CL= 100pF
= 25Ω
CL= 33pF
CL= 2pF
1000.1
02924-012
Figure 12. Small Signal Frequency Response for Various CL (See Figure 44)
9
V
= 200mV p-p
OUT
= 3kΩ
R
F
8
G = +2
7
6
5
4
GAIN (dB)
3
2
1
0
CF= 0pF
CF= 1pF
CF= 1.5pF
CF= 2pF
110
FREQUENCY (MHz )
1000.1
02924-013
Figure 13. Small Signal Frequency Response for Various CF (See Figure 45)
100
V
= 200mV p-p
OUT
10
V
= 200mV p-p
OUT
G = +2
9
8
7
6
5
4
GAIN (dB)
3
2
1
0
CL= 100pF
CL= 51pF
CL= 33pF
CL= 2pF
1
FREQUENCY (MHz)
10
1000.1
02924-015
Figure 15. Small Signal Frequency Response for Various CL (See Figure 45)
8
V
= 200mV p-p
OUT
G = +2
7
6
5
4
GAIN (dB)
3
2
1
0
RL= 500Ω
FREQUENCY (MHz )
R
= 1kΩ
L
1000.1110
02924-016
Figure 16. Small Signal Frequency Response for Various RL (See Figure 45)
100
VS = ±12V
180
80
10
Ω)
1
IMPEDANCE
0.1
0.01
1001k10k100k1M10M100M
FREQUENCY (Hz)
G = +2
G = +1
Figure 14. Output Impedance vs. Frequency (See Figure 47)
2924-014
60
40
GAIN (dB)
20
0
–20
1001k10k100k1M10M100M
PHASE
FREQUENCY (Hz)
Figure 17. Open-Loop Response
Rev. D | Page 8 of 24
GAIN
150
120
90
60
30
0
PHASE (Degrees)
02924-017
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