Analog Devices AD8032BR-REEL7, AD8032BR-REEL, AD8032BR, AD8032BN, AD8032ARM-REEL Datasheet

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1 2 3 4

8 7 6 5

AD8032

OUT1

–IN1 +IN1

–V

+IN2

–IN2

OUT2

2ms/Div

1V/Div

2ms/Div

+5V

1kV

1.7pF +2.5V

OUT

2.7 V, 800 ␮A, 80 MHz

Rail-to-Rail I/O Amplifiers

AD8031/AD8032

FEATURES Low Power

Supply Current 800 ␮A/Amplifier Fully Specified at +2.7 V, +5 V and ⴞ5 V Supplies

High Speed and Fast Settling on +5 V

80 MHz –3 dB Bandwidth (G = +1) 30 V/␮s Slew Rate 125 ns Settling Time to 0.1%

Rail-to-Rail Input and Output

No Phase Reversal with Input 0.5 V Beyond Supplies Input CMVR Extends Beyond Rails by 200 mV Output Swing to Within 20 mV of Either Rail

Low Distortion

–62 dB @ 1 MHz, V –86 dB @ 100 kHz, V

= 2 V p-p

= 4.6 V p-p

Output Current: 15 mA High Grade Option

(max) = 1.5 mV

APPLICATIONS High-Speed Battery-Operated Systems High Component Density Systems Portable Test Instruments A/D Buffer Active Filters High-Speed Set-and-Demand Amplifier

GENERAL DESCRIPTION

The AD8031 (single) and AD8032 (dual) single supply voltage feedback amplifiers feature high-speed performance with 80 MHz

of small signal bandwidth, 30 V/µs slew rate and 125 ns settling

time. This performance is possible while consuming less than

4.0 mW of power from a single +5 V supply. These features increase the operation time of high speed battery-powered systems without compromising dynamic performance.

The products have true single supply capability with rail-to-rail input and output characteristics and are specified for +2.7 V,

+5 V and ±5 V supplies. The input voltage range can extend to

500 mV beyond each rail. The output voltage swings to within 20 mV of each rail providing the maximum output dynamic range.

The AD8031/AD8032 also offer excellent signal quality for only

800 µA of supply current per amplifier; THD is –62 dBc with a

2 V p-p, 1 MHz output signal and –86 dBc for a 100 kHz, 4.6 V p-p signal on +5 V supply. The low distortion and fast settling make them ideal as buffers to single supply, A-to-D converters.

Operating on supplies from +2.7 V to +12 V and dual supplies up to

time

±6 V, the AD8031/AD8032 are ideal for a wide range of applications,

from battery-operated systems with large bandwidth requirements

CONNECTION DIAGRAMS

8-Lead Plastic DIP (N)

and SOIC (R) Packages

8-Lead Plastic DIP (N),

SOIC (R) and ␮SOIC (RM)

Packages

AD8031

–IN

+IN

–V

NC = NO CONNECT

OUT

5-Lead Plastic Surface Mount Package

SOT-23-5 (RT-5)

OUT

–V

+IN

AD8031

(Not to Scale)

–IN

to high-speed systems where component density requires lower power dissipation. The AD8031/AD8032 are available in 8-lead plastic DIP and SOIC packages and will operate over the indus-

trial temperature range of –40°C to +85°C. The AD8031A is also

available in the space-saving 5-lead SOT-23-5 package and the

AD8032A is available in AN 8-lead µSOIC package.

Input V

Output V

OUT

Circuit Diagram

REV. B

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Figure 1. Rail-to-Rail Performance at 100 kHz

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1999

AD8031/AD8032–SPECIFICATIONS

+2.7 V Supply

(@ TA = +25ⴗC, VS = +2.7 V, RL = 1 k⍀ to +1.35 V, RF = 2.5 k⍀ unless otherwise noted)

AD8031A/AD8032A AD8031B/AD8032B

Parameter Conditions Min Typ Max Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Small Signal Bandwidth G = +1, V Slew Rate G = –1, V

< 0.4 V p-p 54 80 54 80 MHz

= 2 V Step 25 30 25 30 V/µs

Settling Time to 0.1% G = –1, VO = 2 V Step, CL = 10 pF 125 125 ns

DISTORTION/NOISE PERFORMANCE

Total Harmonic Distortion f

= 1 MHz, VO = 2 V p-p, G = +2 –62 –62 dBc

= 100 kHz, VO = 2 V p-p, G = +2 –86 –86 dBc

Input Voltage Noise f = 1 kHz 15 15 nV/√Hz Input Current Noise f = 100 kHz 2.4 2.4 pA/√Hz

f = 1 kHz 5 5 pA/√Hz

Crosstalk (AD8032 Only) f = 5 MHz –60 –60 dB

DC PERFORMANCE

Input Offset Voltage V

Offset Drift V

Input Bias Current V

MIN

to T

;

= 1.35 V ±1 ±6 ± 0.5 ±1.5 mV

OUT

MAX

;

= 1.35 V 10 10 µV/°C

OUT

;

= 1.35 V 0.45 2 0.45 2 µA

OUT

MAX

±6 ±10 ±1.6 ± 2.5 mV

2.2 2.2 µA

Input Offset Current 50 500 50 500 nA

;

Open Loop Gain V

to T

MIN

MAX

= 0.35 V to 2.35 V 76 80 76 80 dB

OUT

74 74 dB

INPUT CHARACTERISTICS

Common-Mode Input Resistance 40 40 MΩ Differential Input Resistance 280 280 kΩ

Input Capacitance 1.6 1.6 pF Input Voltage Range –0.5 to –0.5 to

+3.2 +3.2 V

Input Common-Mode Voltage Range

–0.2 to –0.2 to +2.9 +2.9 V

Common-Mode Rejection Ratio V

= 0 V to 2.7 V 46 64 46 64 dB

= 0 V to 1.55 V 58 74 58 74 dB

Differential Input Voltage 3.4 3.4 V

OUTPUT CHARACTERISTICS

Output Voltage Swing Low R

= 10 kΩ +0.05 +0.02 +0.05 +0.02 V

Output Voltage Swing High +2.6 +2.68 +2.6 +2.68 V Output Voltage Swing Low R

= 1 kΩ +0.15 +0.08 +0.15 +0.08 V

Output Voltage Swing High +2.55 +2.6 +2.55 +2.6 V Output Current 15 15 mA Short Circuit Current Sourcing 21 21 mA

Sinking –34 –34 mA

Capacitive Load Drive G = +2 (See Figure 41) 15 15 pF

POWER SUPPLY

Operating Range +2.7 +12 +2.7 +12 V

Quiescent Current per Amplifier 750 1250 750 1250 µA

Power Supply Rejection Ratio V

– = 0 V to –1 V or

VS+ = +2.7 V to +3.7 V 75 86 75 86 dB

Specifications subject to change without notice.

REV. B–2–

SPECIFICATIONS

AD8031/AD8032

+5 V Supply

(@ TA = +25ⴗC, VS = +5 V, RL = 1 k⍀ to +2.5 V, RF = 2.5 k⍀ unless otherwise noted)

AD8031A/AD8032A AD8031B/AD8032B

Parameter Conditions Min Typ Max Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Small Signal Bandwidth G = +1, V Slew Rate G = –1, V

< 0.4 V p-p 54 80 54 80 MHz

= 2 V Step 27 32 27 32 V/µs

Settling Time to 0.1% G = –1, VO = 2 V Step, CL = 10 pF 125 125 ns

DISTORTION/NOISE PERFORMANCE

Total Harmonic Distortion f

= 1 MHz, VO = 2 V p-p, G = +2 –62 –62 dBc

= 100 kHz, VO = 2 V p-p, G = +2 –86 –86 dBc

Input Voltage Noise f = 1 kHz 15 15 nV/√Hz Input Current Noise f = 100 kHz 2.4 2.4 pA/√Hz

f = 1 kHz 5 5 pA/√Hz

Differential Gain R Differential Phase R

= 1 kΩ 0.17 0.17 %

= 1 kΩ 0.11 0.11 Degrees

Crosstalk (AD8032 Only) f = 5 MHz –60 –60 dB

DC PERFORMANCE

Input Offset Voltage V

Offset Drift V

Input Bias Current V

MIN

to T

;

= 2.5 V ±1 ±6 ±0.5 ±1.5 mV

OUT

MAX

;

= 2.5 V 5 5 µV/°C

OUT

;

= 2.5 V 0.45 1.2 0.45 1.2 µA

OUT

MAX

±6 ±10 ±1.6 ± 2.5 mV

2.0 2.0 µA

Input Offset Current 50 350 50 250 nA

;

Open Loop Gain V

to T

MIN

MAX

= 1.5 V to 3.5 V 76 82 76 82 dB

OUT

74 74 dB

INPUT CHARACTERISTICS

Common-Mode Input Resistance 40 40 MΩ Differential Input Resistance 280 280 kΩ

Input Capacitance 1.6 1.6 pF Input Voltage Range –0.5 to –0.5 to

+5.5 +5.5 V

Input Common-Mode Voltage Range

–0.2 to –0.2 to +5.2 +5.2 V

Common-Mode Rejection Ratio V

= 0 V to 5 V 56 70 56 70 dB

= 0 V to 3.8 V 66 80 66 80 dB

Differential Input Voltage 3.4 3.4 V

OUTPUT CHARACTERISTICS

Output Voltage Swing Low R

= 10 kΩ +0.05 +0.02 +0.05 +0.02 V

Output Voltage Swing High +4.95 +4.98 +4.95 +4.98 V Output Voltage Swing Low R

= 1 kΩ +0.2 +0.1 +0.2 +0.1 V

Output Voltage Swing High +4.8 +4.9 +4.8 +4.9 V Output Current 15 15 mA Short Circuit Current Sourcing 28 28 mA

Sinking –46 –46 mA

Capacitive Load Drive G = +2 (See Figure 41) 15 15 pF

POWER SUPPLY

Operating Range +2.7 +12 +2.7 +12 V

Quiescent Current per Amplifier 800 1400 800 1400 µA

Power Supply Rejection Ratio V

– = 0 V to –1 V or

VS+ = +5 V to +6 V 75 86 75 86 dB

Specifications subject to change without notice.

REV. B

–3–

AD8031/AD8032–SPECIFICATIONS

ⴞ5 V Supply

(@ TA = +25ⴗC, VS = ⴞ5 V, RL = 1 k⍀ to 0 V, RF = 2.5 k⍀ unless otherwise noted)

AD8031A/AD8032A AD8031B/AD8032B

Parameter Conditions Min Typ Max Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Small Signal Bandwidth G = +1, V Slew Rate G = –1, V

< 0.4 V p-p 54 80 54 80 MHz

= 2 V Step 30 35 30 35 V/µs

Settling Time to 0.1% G = –1, VO = 2 V Step, CL = 10 pF 125 125 ns

DISTORTION/NOISE PERFORMANCE

Total Harmonic Distortion f

= 1 MHz, VO = 2 V p-p, G = +2 –62 –62 dBc

= 100 kHz, VO = 2 V p-p, G = +2 –86 –86 dBc

Input Voltage Noise f = 1 kHz 15 15 nV/√Hz Input Current Noise f = 100 kHz 2.4 2.4 pA/√Hz

f = 1 kHz 5 5 pA/√Hz

Differential Gain R Differential Phase R

= 1 kΩ 0.15 0.15 %

= 1 kΩ 0.15 0.15 Degrees

Crosstalk (AD8032 Only) f = 5 MHz –60 –60 dB

DC PERFORMANCE

Input Offset Voltage V

Offset Drift V Input Bias Current V

MIN

= 0 V; V

to T = 0 V; V = 0 V; V

to T

= 0 V ±1 ±6 ±0.5 ±1.5 mV

OUT

MAX

= 0 V 5 5 µV/°C

OUT

= 0 V 0.45 1.2 0.45 1.2 µA

OUT

MAX

±6 ±10 ±1.6 ± 2.5 mV

2.0 2.0 µA

Input Offset Current 50 350 50 250 nA Open Loop Gain V

MIN

= 0 V; V

to T

= ±2 V 76 80 76 80 dB

OUT

MAX

74 74 dB

INPUT CHARACTERISTICS

Common-Mode Input Resistance 40 40 MΩ Differential Input Resistance 280 280 kΩ

Input Capacitance 1.6 1.6 pF Input Voltage Range –5.5 to –5.5 to

+5.5 +5.5 V

Input Common-Mode Voltage Range

–5.2 to –5.2 to +5.2 +5.2 V

Common-Mode Rejection Ratio V

= –5 V to +5 V 60 80 60 80 dB

= –5 V to +3.5 V 66 90 66 90 dB

Differential/Input Voltage 3.4 3.4 V

OUTPUT CHARACTERISTICS

Output Voltage Swing Low R

= 10 kΩ –4.94 –4.98 –4.94 –4.98 V

Output Voltage Swing High +4.94 +4.98 +4.94 +4.98 V Output Voltage Swing Low R

= 1 kΩ –4.7 –4.85 –4.7 –4.85 V

Output Voltage Swing High +4.7 +4.75 +4.7 +4.75 V Output Current 15 15 mA Short Circuit Current Sourcing 35 35 mA

Sinking –50 –50 mA

Capacitive Load Drive G = +2 (See Figure 41) 15 15 pF

POWER SUPPLY

Operating Range ±1.35 ±6 ±1.35 ±6V Quiescent Current per Amplifier 900 1600 900 1600 µA

Power Supply Rejection Ratio V

– = –5 V to –6 V or

VS+ = +5 V to +6 V 76 86 76 86 dB

Specifications subject to change without notice.

–4–

REV. B

AD8031/AD8032

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +12.6 V

Internal Power Dissipation

Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . 1.3 Watts

Small Outline Package (R) . . . . . . . . . . . . . . . . . . 0.8 Watts

µSOIC (RM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 Watts

SOT-23-5 (RT) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 Watts

Input Voltage (Common-Mode) . . . . . . . . . . . . . ±V

± 0.5 V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±3.4 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range (N, R, RM, RT)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +125°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C

NOTES

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Specification is for the device in free air:

8-Lead Plastic DIP Package: θJA = 90°C/W. 8-Lead SOIC Package: θJA = 155°C/W. 8-Lead µSOIC Package: θJA = 200°C/W. 5-Lead SOT-23-5 Package: θJA = 240°C/W.

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8031/AD8032 are limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition

temperature of the plastic, approximately +150°C. Exceeding

this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by

the package. Exceeding a junction temperature of +175°C for

an extended period can result in device failure.

While the AD8031/AD8032 are internally short circuit protected, this may not be sufficient to guarantee that the maxi-

mum junction temperature (+150°C) is not exceeded under

all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves shown in Figure 2.

2.0

1.5

8-LEAD mSOIC

1.0

0.5

MAXIMUM POWER DISSIPATION – Watts

–50 80–40

–30 –20 –10010 20 30 40 50 60 70

8-LEAD PLASTIC DIP PACKAGE

SOT-23-5

AMBIENT TEMPERATURE – 8C

8-LEAD SOIC PACKAGE

TJ = +1508C

Figure 2. Maximum Power Dissipation vs. Temperature

ORDERING GUIDE

Temperature Package Package Brand

Model Range Descriptions Options Code

AD8031AN –40°C to +85°C 8-Lead Plastic DIP N-8 AD8031AR –40°C to +85°C 8-Lead SOIC SO-8 AD8031AR-REEL –40°C to +85°C 13" Tape and Reel SO-8 AD8031AR-REEL7 –40°C to +85°C 7" Tape and Reel SO-8 AD8031ART-REEL –40°C to +85°C 13" Tape and Reel RT-5 H0A AD8031ART-REEL7 –40°C to +85°C 7" Tape and Reel RT-5 H0A AD8031BN –40°C to +85°C 8-Lead Plastic DIP N-8 AD8031BR –40°C to +85°C 8-Lead SOIC SO-8 AD8031BR-REEL –40°C to +85°C 13" Tape and Reel SO-8 AD8031BR-REEL7 –40°C to +85°C 7" Tape and Reel SO-8

AD8032AN –40°C to +85°C 8-Lead Plastic DIP N-8 AD8032AR –40°C to +85°C 8-Lead SOIC SO-8 AD8032AR-REEL –40°C to +85°C 13" Tape and Reel SO-8 AD8032AR-REEL7 –40°C to +85°C 7" Tape and Reel SO-8 AD8032ARM –40°C to +85°C 8-Lead µSOIC RM-8 H9A AD8032ARM-REEL –40°C to +85°C 13" Tape and Reel RM-8 H9A AD8032ARM-REEL7 –40°C to +85°C 7" Tape and Reel RM-8 H9A AD8032BN –40°C to +85°C 8-Lead Plastic DIP N-8 AD8032BR –40°C to +85°C 8-Lead SOIC SO-8 AD8032BR-REEL –40°C to +85°C 13" Tape and Reel SO-8 AD8032BR-REEL7 –40°C to +85°C 7" Tape and Reel SO-8

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8031/AD8032 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

REV. B

–5–

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