Analog Devices AD8005 Datasheet
270 MHz, 400 A
a
FEATURES
Ultralow Power
400 A Power Supply Current (4 mW on ⴞ5 V
Specified for Single Supply Operation
High Speed
270 MHz, –3 dB Bandwidth (G = +1)
170 MHz, –3 dB Bandwidth (G = +2)
280 V/s Slew Rate (G = +2)
28 ns Settling Time to 0.1%, 2 V Step (G = +2)
Low Distortion/Noise
–63 dBc @ 1 MHz, V
–50 dBc @ 10 MHz, V
= 2 V p-p
O
= 2 V p-p
O
4.0 nV/√Hz Input Voltage Noise @ 10 MHz
Good Video Specifications (RL = 1 k⍀, G = +2)
Gain Flatness 0.1 dB to 30 MHz
0.11% Differential Gain Error
0.4ⴗ Differential Phase Error
APPLICATIONS
Signal Conditioning
A/D Buffer
Power-Sensitive, High-Speed Systems
Battery Powered Equipment
Loop/Remote Power Systems
Communication or Video Test Systems
Portable Medical Instruments
PRODUCT DESCRIPTION
The AD8005 is an ultralow power, high-speed amplifier with a
wide signal bandwidth of 170 MHz and slew rate of 280 V/µs.
This performance is achieved while consuming only 400 µA of
quiescent supply current. These features increase the operating
time of high-speed battery-powered systems without reducing
dynamic performance.
)
S
Current Feedback Amplifier
AD8005
FUNCTIONAL BLOCK DIAGRAM
8-Lead Plastic DIP and SOIC
AD8005
NC
1
2
–IN
+IN
3
–V
4
S
NC = NO CONNECT
5-Lead SOT-23
OUT
–V
2
S
+IN
3
AD8005
The current feedback design results in gain flatness of 0.1 dB
to 30 MHz while offering differential gain and phase errors of
0.11% and 0.4°. Harmonic distortion is low over a wide
bandwidth with THDs of –63 dBc at 1 MHz and –50 dBc at
10 MHz. Ideal features for a signal conditioning amplifier or
buffer to a high-speed A-to-D converter in portable video,
medical or communication systems.
The AD8005 is characterized for +5 V and ±5 V supplies and
will operate over the industrial temperature range of –40°C to
+85°C. The amplifier is supplied in 8-lead plastic DIP, 8-lead
SOIC and 5-lead SOT-23 packages.
8
NC
7
+V
S
OUT
6
NC
5
+V
51
S
–IN
4
3
G = +2
2
1
0
–1
–2
–3
NORMALIZED GAIN – dB
–4
–5
–6
0.1 50010 100
V
R
OUT
= 1kV
L
= 200mV p-p
1
FREQUENCY – MHz
VS = ±5V
VS = +5V
Figure 1. Frequency Response; G = +2, VS = +5 V or ±5V
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
–40
G = +2
V
= 2V p-p
OUT
–50
RL = 1kV
–60
–70
–80
DISTORTION – dBc
–90
–100
1
3RD
2ND
FREQUENCY – MHz
2ND
3RD
2010
Figure 2. Distortion vs. Frequency; VS = ±5V
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1999
AD8005–SPECIFICATIONS
ⴞ5 V SUPPLIES
(@ TA = +25ⴗC, VS = ⴞ5 V, RL = 1 k⍀ unless otherwise noted)
AD8005A
Parameter Conditions Min Typ Max Units
DYNAMIC PERFORMANCE R
–3 dB Small Signal Bandwidth G = +1, V
Bandwidth for 0.1 dB Flatness G = +2, V
Large Signal Bandwidth G = +10, V
Slew Rate (Rising Edge) G = +2, V
= 3.01 kΩfor “N” Package or
F
R
= 2.49 kΩ for “R” Package or
F
R
= 2.10 kΩ for “RT” Package
F
G = +2, V
G = –1, V
= 0.2 V p-p 225 270 MHz
O
= 0.2 V p-p 140 170 MHz
O
= 0.2 V p-p 10 30 MHz
O
= 4 V p-p, R
O
= 4 V Step 280 V/µs
O
= 4 V Step, R
O
= 499 Ω 40 MHz
F
= 1.5 kΩ 1500 V/µs
F
Settling Time to 0.1% G = +2, VO = 2 V Step 28 ns
DISTORTION/NOISE PERFORMANCE R
Total Harmonic Distortion f
= 3.01 kΩ for “N” Package or
F
= 2.49 kΩ for “R” Package or
R
F
R
= 2.10 kΩ for “RT” Package
F
= 1 MHz, VO = 2 V p-p, G = +2 –63 dBc
C
= 10 MHz, VO = 2 V p-p, G = +2 –50 dBc
f
C
Differential Gain NTSC, G = +2 0.11 %
Differential Phase NTSC, G = +2 0.4 Degrees
Input Voltage Noise f = 10 MHz 4.0 nV/√Hz
Input Current Noise f = 10 MHz, +I
–I
IN
IN
1.1 pA/√Hz
9.1 pA/√Hz
DC PERFORMANCE
Input Offset Voltage 530±mV
to T
T
MIN
MAX
50 ±mV
Offset Drift 40 µV/°C
+Input Bias Current 0.5 1 ±µA
to T
T
MIN
MAX
2 ±µA
–Input Bias Current 510±µA
to T
T
MIN
MAX
12 ±µA
Input Bias Current Drift (±) 6nA/°C
Open-Loop Transimpedance 400 1000 kΩ
INPUT CHARACTERISTICS
Input Resistance +Input 90 MΩ
–Input 260 Ω
Input Capacitance +Input 1.6 pF
Input Common-Mode Voltage Range 3.8 ±V
Common-Mode Rejection Ratio V
= ±2.5 V 46 54 dB
CM
OUTPUT CHARACTERISTICS
Output Voltage Swing Positive +3.7 +3.90 V
Negative –3.90 –3.7 V
Output Current R
= 50 Ω 10 mA
L
Short Circuit Current 60 mA
POWER SUPPLY
Quiescent Current 400 475 µA
Power Supply Rejection Ratio V
to T
T
MIN
S
MAX
= ±4 V to ±6 V 56 66 dB
560 µA
OPERATING TEMPERATURE RANGE –40 +85 °C
Specifications subject to change without notice.
–2–
REV. A
AD8005
+5 V SUPPLY
(@ TA = +25ⴗC, VS = +5 V, RL = 1 k⍀ to 2.5 V unless otherwise noted)
AD8005A
Parameter Conditions Min Typ Max Units
DYNAMIC PERFORMANCE R
–3 dB Small Signal Bandwidth G = +1, V
Bandwidth for 0.1 dB Flatness G = +2, V
Large Signal Bandwidth G = +10, V
Slew Rate (Rising Edge) G = +2, V
= 3.01 kΩ for “N” Package or
F
R
= 2.49 kΩ for “R” Package or
F
R
= 2.10 kΩ for “RT” Package
F
G = +2, V
G = –1, V
= 0.2 V p-p 190 225 MHz
O
= 0.2 V p-p 110 130 MHz
O
= 0.2 V p-p 10 30 MHz
O
= 2 V p-p, R
O
= 2 V Step 260 V/µs
O
= 2 V Step, R
O
= 499 Ω 45 MHz
F
= 1.5 kΩ 775 V/µs
F
Settling Time to 0.1% G = +2, VO = 2 V Step 30 ns
DISTORTION/NOISE PERFORMANCE R
Total Harmonic Distortion f
Differential Gain NTSC, G = +2, R
Differential Phase NTSC, G = +2, R
= 3.01 kΩ for “N” Package or
F
= 2.49 kΩ for “R” Package or
R
F
R
= 2.10 kΩ for “RT” Package
F
= 1 MHz, VO = 2 V p-p, G = +2 –60 dBc
C
= 10 MHz, VO = 2 V p-p, G = +2 –50 dBc
f
C
to 1.5 V 0.14 %
L
to 1.5 V 0.70 Degrees
L
Input Voltage Noise f = 10 MHz 4.0 nV/√Hz
Input Current Noise f = 10 MHz, +I
–I
IN
IN
1.1 pA/√Hz
9.1 pA/√Hz
DC PERFORMANCE
Input Offset Voltage 535±mV
to T
T
MIN
MAX
50 ±mV
Offset Drift 40 µV/°C
+Input Bias Current 0.5 1 ±µA
to T
T
MIN
MAX
2 ±µA
–Input Bias Current 510±µA
to T
T
MIN
MAX
11 ±µA
Input Bias Current Drift (±)8nA/°C
Open-Loop Transimpedance 50 500 kΩ
INPUT CHARACTERISTICS
Input Resistance +Input 120 MΩ
–Input 300 Ω
Input Capacitance +Input 1.6 pF
Input Common-Mode Voltage Range 1.5 to 3.5 V
Common-Mode Rejection Ratio VCM = 1.5 V to 3.5 V 48 54 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing 1.1 to 3.9 0.95 to 4.05 V
Output Current R
= 50 Ω 10 mA
L
Short Circuit Current 30 mA
POWER SUPPLY
Quiescent Current 350 425 µA
to T
T
MIN
MAX
475 µA
Power Supply Rejection Ratio VS = +4 V to +6 V 56 66 dB
OPERATING TEMPERATURE RANGE –40 +85 °C
Specifications subject to change without notice.
REV. A
–3–
AD8005
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
1
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . . 1.3 Watts
Small Outline Package (R) . . . . . . . . . . . . . . . . . . 0.75 Watts
SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . 0.5 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . ±V
± 1V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±3.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range
N, R & RT Package . . . . . . . . . . . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead Plastic DIP Package: θJA = 90°C/W
8-Lead SOIC Package: θJA = 155°C/W
5-Lead SOT-23 Package: θJA = 240°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8005 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately +150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of +175°C for an extended
period can result in device failure.
While the AD8005 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves shown in Figure 3.
2.0
TJ = +150°C
8-LEAD PLASTIC-DIP PACKAGE
1.5
8-LEAD SOIC PACKAGE
1.0
0.5
MAXIMUM POWER DISSIPATION – Watts
0
–50
5-LEAD SOT-23 PACKAGE
AMBIENT TEMPERATURE – °C
Figure 3. Maximum Power Dissipation vs. Temperature
ORDERING GUIDE
Temperature Package Package Brand
Model Range Description Option Code
AD8005AN –40°C to +85°C 8-Lead Plastic DIP N-8
AD8005AR –40°C to +85°C 8-Lead Plastic SOIC SO-8
AD8005AR-REEL –40°C to +85°C 13" Tape and Reel SO-8
AD8005ART-REEL –40°C to +85°C 13" Tape and Reel RT-5 H1A
AD8005AR-REEL7 –40°C to +85°C 7" Tape and Reel SO-8
AD8005ART-REEL7 –40°C to +85°C 7" Tape and Reel RT-5 H1A
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8005 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
9080
706050403020100–40 –30 –20 –10
–4–
REV. A
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