250 MHz –3 dB Bandwidth (G = +1)
3000 V/s Slew Rate
21 ns Settling Time to 0.1%
1.8 ns Rise Time for 2 V Step
Low Power
3.5 mA/Amp Power Supply Current (35 mW/Amp)
Single Supply Operation
Fully Specified for +5 V Supply
Good Video Specifications (R
Gain Flatness 0.1 dB to 30 MHz
0.04% Differential Gain Error
0.10 Differential Phase Error
Low Distortion
–78 dBc THD at 5 MHz
–61 dBc THD at 20 MHz
High Output Current of 50 mA
Available in a 14-Lead PDIP, SOIC, and CERDIP
APPLICATIONS
Image Scanners
Active Filters
Video Switchers
Special Effects
GENERAL DESCRIPTION
The AD8004 is a quad, low power, high speed amplifier designed
to operate on single or dual supplies. It utilizes a current feedback architecture and features high slew rate of 3000 V/ms
making the AD8004 ideal for handling large amplitude pulses.
Additionally, the AD8004 provides gain flatness of 0.1 dB to
= 150 , G = +2)
L
Current Feedback Amplifier
AD8004
CONNECTION DIAGRAM
PDIP (N), CERDIP (Q), and
SOIC (R) Packages
1
OUTPUT
1
2
–IN
3
+IN
+V
+IN
–IN
OUTPUT
4
S
5
6
7
AD8004
(
TOP VIEW)
23
30 MHz while offering differential gain and phase error of
0.04% and 0.10∞. This makes the AD8004 suitable for video
electronics such as cameras and video switchers.
The AD8004 offers low power of 3.5 mA/amplifier and can run
on a single +4 V to +12 V power supply, while being capable of
delivering up to 50 mA of load current. All this is offered in a
small 14-lead DIP or 14-lead SOIC package. These features
make this amplifier ideal for portable and battery powered applications where size and power are critical.
The outstanding bandwidth of 250 MHz along with 3000 V/ms
of slew rate make the AD8004 useful in many general-purpose,
high speed applications where dual power supplies of up to ±6V
and single supplies from 4 V to 12 V are needed. The AD8004
is available in the industrial temperature range of –40∞C to +85∞C
in the N and R packages, and in the military temperature range
of –55∞C to +125∞C in the Q package.
14
OUTPUT
4
13
–IN
12
+IN
–V
11
S
+IN
10
–IN
9
OUTPUT
8
G = +2
= 50mV rms
V
IN
R
= 100
L
R
= 1.10k
F
R PACKAGE
0.1
0
–0.1
–0.2
–0.3
–0.4
NORMALIZED FLATNESS – dB
–0.5
15001040
Figure 1. Frequency Response and Flatness, G = +2
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.
(@ TA = +25C, VS = 5 V, RL = 100 , unless otherwise noted.)
AD8004A AD8004S
ParameterConditionsMinTyp MaxMinTyp Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth, N PackageG = +2, RF = 698 Ω185MHz
G = +1
, RF = 806 Ω
Bandwidth for 0.1 dB Flatness
G = +23030MHz
Slew RateG = +2, V
G = –2, V
Settling Time to 0.1%G = +2, V
= 4 V Step30003000V/µs
O
= 4 V Step20002000V/µs
O
= 2 V Step2121ns
O
250MHz
Rise and Fall Time (10% to 90%)G = +2, VO = 2 V Step1.81.8ns
NOISE/HARMONIC PERFORMANCE
Total Harmonic DistortionfC = 5 MHz, VO = 2 V p-p, RL = 1 kΩ–78–78dBc
Crosstalk, R Package, Worst Casef = 5 MHz, G = +2, R
Crosstalk, N Package, Worst Casef = 5 MHz, G = +2, R
= 1 kΩ–69dB
L
= 1 kΩ–64dB
L
Input Voltage Noisef = 10 kHz1.51.5nV/√Hz
Input Current Noisef = 10 kHz, +In3838pA/√Hz
–In3838pA/√Hz
Differential Gain ErrorNTSC, G = +2, RL = 150 Ω, RF = 1.21 kΩ0.040.04%
Differential Phase ErrorNTSC, G = +2, R
Differential Gain ErrorNTSC, G = +2, R
Input Capacitance+Input1.51.5pF
Input Common-Mode Voltage Range3.23.2±V
Common-Mode Rejection Ratio
Offset VoltageV
–Input CurrentV
+Input CurrentVCM = ±2.5 V, T
= ±2.5 V52585258dB
CM
= ±2.5 V, T
CM
MIN
MIN
to T
to T
MAX
MAX
11µA/V
1212µA/V
OUTPUT CHARACTERISTICS
Output Voltage SwingRL = 150 Ω3.93.9±V
Output Current5050mA
Short Circuit Current100180100180mA
POWER SUPPLY
Operating Range±2.0±6.0± 2.0± 6.0 V
Total Quiescent Current14171417mA
Power Supply Rejection Ratio∆V
–Input CurrentT
+Input CurrentT
Specifications subject to change without notice.
to T
T
MIN
MIN
MIN
MAX
= ±2 V56625662dB
S
to T
MAX
to T
MAX
16201623mA
0.50.5µA/V
44µA/V
–2–
REV. C
SPECIFICATIONS
(@ TA = +25C, VS = +5 V, RL = 100 , unless otherwise noted.)
AD8004
AD8004AAD8004S
ParameterConditionsMinTypMax MinTypMax Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth, N PackageG = +2, R
G = +1, R
Bandwidth for 0.1 dB Flatness
G = +23030MHz
Slew RateG = +2, V
Settling Time to 0.1%G = +2, V
= 698 Ω150MHz
F
= 806 Ω200MHz
F
= 2 V Step11001100V/µs
O
= 2 V Step2424ns
O
Rise and Fall Time (10%
to 90%)G = +2, VO = 2 V Step2.32.3ns
NOISE/HARMONIC
PERFORMANCE
Total Harmonic Distortionf
= 5 MHz, VO = 2 V p-p, RL = 1 kΩ–65–65dBc
C
Crosstalk, R Package,
Worst Casef = 5 MHz, G = +2, R
= 1 kΩ–69dB
L
Crosstalk, N Package,
Worst Casef = 5 MHz, G = +2, R
= 1 kΩ–64dB
L
Input Voltage Noisef = 10 kHz1.51.5nV/√Hz
Input Current Noisef = 10 kHz, +In3838pA/√Hz
–In3838pA/√Hz
Differential Gain Error
Differential Phase ErrorNTSC, G = +2, R
Differential Gain ErrorNTSC, G = +2, R
Differential Phase ErrorNTSC, G = +2, RL = 1 kΩ, RF = 1.21 kΩ
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
AD8004AN– 40°C to +85°C14-Lead PDIPN-14
AD8004AR-14– 40°C to +85°C14-Lead SOICR-14
AD8004AR-14-REEL–40°C to +85°C13" Tape and Reel R-14
AD8004AR-14-REEL7 –40°C to +85°C7" Tape and ReelR-14
AD8004SQ–55°C to +125°C 14-Lead CERDIPQ-14
TemperaturePackagePackage
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8004 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature
of the plastic, approximately +150°C. Exceeding this limit
temporarily may cause a shift in parametric performance due to
a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of +175°C for an extended
period can result in device failure.
While the AD8004 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction temperature is not exceeded under all conditions. To ensure proper
operation, it is necessary to observe the maximum power ratings.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8004 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
604
V
IN
604
50
Figure 3. Test Circuit; Gain = –2
50
0.1F
0.1F
SCOPE
INPUT
10F
10F
50
V
+V
S
–V
S
249
IN
61.9
499
Figure 4. Test Circuit; Gain = –2
50
0.1F
0.1F
SCOPE
INPUT
10F
10F
50
+V
S
–V
S
–4–
REV. C
FREQUENCY – MHz
1
NORMALIZED FREQUENCY RESPONSE – dB
–4
–9
15001040100
–3
–2
–1
0
–5
–6
–7
–8
G = –1
G = –2
G = –10
VS = 5V
R
F
= 499
V
IN
= 50mV rms
R
L
= 100
N PACKAGE
Typical Performance Characteristics–
AD8004
TPC 1.* 100 mV Step Response; G = +2, VS = ±2.5 V or ±5 V
TPC 2.* Step Response; G = +2, VS = ±5 V
2
1
0
RL = 100
–1
V
= 50mV (G = +1, +2)
IN
V
= 5mV (G = +10)
–2
IN
–3
–4
–5
–6
–7
NORMALIZED FREQUENCY RESPONSE – dB
–8
150010
G = +1,
R
= 698
F
G = +2,
R
G = +10,
R
FREQUENCY – MHz
40100
= 604
F
= 499
F
TPC 4.* 100 mV Step Response; G = –2, VS = ±2.5 V or±5 V
TPC 5.* Step Response; G = –2, VS = ±5 V
TPC 3. Frequency Response; G = +1, +2, +10; VS =±5 V
*VS = ± 2.5 V operation is identical to VS = +5 V single-supply operation.
REV. C
TPC 6. Frequency Response; G = –1, –2, –10
–5–
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