Analog Devices AD8004AR-14-REEL7, AD8004AR-14-REEL, AD8004AR-14, AD8004AN Datasheet

Quad 3000 V/␮s, 35 mW

0.04

0.03

0.02

0.01

0.00
–0.01
–0.02
–0.03
–0.04

1

ST

DIFF GAIN – %

0.12

0.10

0.08

0.06

0.04

0.02

0.00
–0.02
–0.04

DIFF PHASE – Degrees

2ND 3RD 4TH 5TH 6TH 7TH 8TH 9TH 10TH 11TH

1ST 2ND 3RD 4TH 5TH 6TH 7TH 8TH 9TH 10TH 11TH

80 IRE
R

L

= 150V

V

S

= 65V

R

F

= 1.21kV

80 IRE
R

L

= 150V

V

S

= 65V

R

F

= 1.21kV

a

FEATURES
High Speed

250 MHz –3 dB Bandwidth (G = +1)
3000 V/␮s Slew Rate
21 ns Settling Time to 0.1%

1.8 ns Rise Time for 2 V Step

Low Power

3.5 mA/Amp Power Supply Current (35 mW/Amp)

Single Supply Operation

Fully Specified for +5 V Supply

Good Video Specifications (R

Gain Flatness 0.1 dB to 30 MHz

0.04% Differential Gain Error

0.10ⴗ Differential Phase Error

Low Distortion

–78 dBc THD at 5 MHz

–61 dBc THD at 20 MHz
High Output Current of 50 mA
Available in a 14-Lead Plastic DIP and SOIC

APPLICATIONS
Image Scanners
Active Filters
Video Switchers
Special Effects

PRODUCT DESCRIPTION

The AD8004 is a quad, low power, high speed amplifier designed
to operate on single or dual supplies. It utilizes a current feed­back architecture and features high slew rate of 3000 V/µs
making the AD8004 ideal for handling large amplitude pulses.
Additionally, the AD8004 provides gain flatness of 0.1 dB to

= 150 ⍀, G = +2)

L

Current Feedback Amplifier

AD8004

CONNECTION DIAGRAM

Plastic DIP (N) and

SOIC (R) Packages

1

OUTPUT

1

2

–IN

3

+IN

+V

+IN
–IN

OUTPUT

4

S

5
6
7

AD8004

(

TOP VIEW)

23

30 MHz while offering differential gain and phase error of

0.04% and 0.10°. This makes the AD8004 suitable for video

electronics such as cameras and video switchers.

The AD8004 offers low power of 3.5 mA/amplifier and can run
on a single +4 V to +12 V power supply, while being capable of
delivering up to 50 mA of load current. All this is offered in a
small 14-lead plastic DIP or 14-lead SOIC package. These
features make this amplifier ideal for portable and battery pow­ered applications where size and power are critical.

The outstanding bandwidth of 250 MHz along with 3000 V/µs

of slew rate make the AD8004 useful in many general purpose,
high speed applications where dual power supplies of up to

±6 V and single supplies from 4 V to 12 V are needed. The
AD8004 is available in the industrial temperature range of –40°C
to +85°C.

14

OUTPUT

4

13

–IN

12

+IN

11

–V

S

+IN

10

–IN

9

OUTPUT

8

G = +2

= 50mV rms

V

IN

= 100V

R

L

= 1.10kV

R

F

R PACKAGE

+0.1

0

–0.1

–0.2

–0.3

–0.4

NORMALIZED FLATNESS – dB

–0.5

1 50010 40

Figure 1. Frequency Response and Flatness, G = +2

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

+5V

S

FREQUENCY – MHz

+5V

S

65V

+1

0

–1

65V

S

S

100

–2

–3

–4

–5

–6

–7

–8

NORMALIZED FREQUENCY RESPONSE – dB

–9

Figure 2. Differential Gain/Differential Phase

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1999

AD8004–SPECIFICATIONS

(@ TA = + 25ⴗC, VS = ⴞ5 V, RL = 100 ⍀, unless otherwise noted)

AD8004A

Parameter Conditions Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Bandwidth, N Package G = +2, R

G = +1

Bandwidth for 0.1 dB Flatness

G = +2 30 MHz

Slew Rate G = +2, V

G = –2, V

Settling Time to 0.1% G = +2, V

= 698 Ω 185 MHz

F

, R

= 806 Ω

F

= 4 V Step 3000 V/µs

O

= 4 V Step 2000 V/µs

O

= 2 V Step 21 ns

O

250 MHz

Rise & Fall Time (10% to 90%) G = +2, VO = 2 V Step 1.8 ns

NOISE/HARMONIC PERFORMANCE

Total Harmonic Distortion fC = 5 MHz, VO = 2 V p-p, R
Crosstalk, R Package, Worst Case f = 5 MHz, G = +2, R
Crosstalk, N Package, Worst Case f = 5 MHz, G = +2, R

L

L

= 1 kΩ –78 dBc

L

= 1 kΩ –69 dB

= 1 kΩ –64 dB
Input Voltage Noise f = 10 kHz 1.5 nV/√Hz
Input Current Noise f = 10 kHz, +In 38 pA/√Hz

–In 38 pA/√Hz

Differential Gain Error NTSC, G = +2, R
Differential Phase Error NTSC, G = +2, R
Differential Gain Error NTSC, G = +2, R
Differential Phase Error NTSC, G = +2, R

= 150 Ω, RF = 1.21 kΩ 0.04 %

L

= 150 Ω, RF = 1.21 kΩ 0.10 Degree

L

= 1 kΩ, RF = 1.21 kΩ 0.01 %

L

= 1 kΩ, RF = 1.21 kΩ 0.04 Degree

L

DC PERFORMANCE

Input Offset Voltage 1.0 3.5 mV

T

MIN–TMAX

1.5 5 mV

Offset Drift 15 µV/°C
–Input Bias Current 35 90 ±µA

T

MIN–TMAX

110 ±µA

+Input Bias Current 40 110 ±µA

120 ±µA

Open-Loop Transresistance V

T

MIN–TMAX

= ±2.5 V 170 290 kΩ

O

T

MIN–TMAX

220 kΩ

INPUT CHARACTERISTICS

Input Resistance +Input 2 MΩ

–Input 50 Ω

Input Capacitance +Input 1.5 pF

Input Common-Mode Voltage Range 3.2 ±V

Common-Mode Rejection Ratio

Offset Voltage V
–Input Current V
+Input Current V

= ±2.5 V 52 58 dB

CM

= ±2.5 V, T

CM

= ±2.5 V, T

CM

MIN–TMAX

MIN–TMAX

1 µA/V
12 µA/V

OUTPUT CHARACTERISTICS

Output Voltage Swing R

= 150 Ω 3.9 ±V

L

Output Current 50 mA
Short Circuit Current 100 180 mA

POWER SUPPLY

Operating Range ±2.0 ±6.0 V

Total Quiescent Current 14 17 mA

16 20 mA

0.5 µA/V
4 µA/V

Power Supply Rejection Ratio ∆V

–Input Current T
+Input Current T

Specifications subject to change without notice.

T

MIN–TMAX

= ±2 V 56 62 dB

S

MIN–TMAX

MIN–TMAX

–2–

REV. B

(@ TA = + 25ⴗC, VS = +5 V, RL = 100 ⍀, unless otherwise noted)

AD8004

AD8004A

Parameter Conditions Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Bandwidth, N Package G = +2, R

G = +1, R

Bandwidth for 0.1 dB Flatness

G = +2 30 MHz
Slew Rate G = +2, V
Settling Time to 0.1% G = +2, V

= 698 Ω 150 MHz

F

= 806 Ω

F

= 2 V Step 1100 V/µs

O

= 2 V Step 24 ns

O

200 MHz

Rise & Fall Time (10% to 90%) G = +2, VO = 2 V Step 2.3 ns

NOISE/HARMONIC PERFORMANCE

Total Harmonic Distortion fC = 5 MHz, VO = 2 V p-p, R
Crosstalk, R Package, Worst Case f = 5 MHz, G = +2, R
Crosstalk, N Package, Worst Case f = 5 MHz, G = +2, R

L

L

= 1 kΩ –65 dBc

L

= 1 kΩ –69 dB

= 1 kΩ –64 dB
Input Voltage Noise f = 10 kHz 1.5 nV/√Hz
Input Current Noise f = 10 kHz, +In 38 pA/√Hz

–In 38 pA/√Hz

Differential Gain Error NTSC, G = +2, R
Differential Phase Error NTSC, G = +2, R
Differential Gain Error NTSC, G = +2, R
Differential Phase Error NTSC, G = +2, R

= 150 Ω, RF = 1.21 kΩ 0.06 %

L

= 150 Ω, RF = 1.21 kΩ 0.25 Degree

L

= 1 kΩ, RF = 1.21 kΩ 0.01 %

L

= 1 kΩ, RF = 1.21 kΩ 0.08 Degree

L

DC PERFORMANCE

Input Offset Voltage 1.0 2.5 mV

T

MIN–TMAX

13 mV

Offset Drift 15 µV/°C
–Input Bias Current 20 80 ±µA

T

MIN–TMAX

100 ±µA

+Input Bias Current 35 100 ±µA

115 ±µA

Open Loop Transresistance V

T

MIN–TMAX

= +1.5 V to +3.5 V 140 230 kΩ

O

T

MIN–TMAX

170 kΩ

INPUT CHARACTERISTICS

Input Resistance +Input 2 MΩ

–Input 50 Ω

Input Capacitance +Input 1.5 pF
Input Common-Mode Voltage Range 3.2 V
Common-Mode Rejection Ratio

Offset Voltage V
–Input Current V
+Input Current VCM = +1 V to +3 V, T

=+1Vto+3V 52 57 dB

CM

= +1 V to +3 V, T

CM

MIN–TMAX

MIN–TMAX

2 µA/V
15 µA/V

OUTPUT CHARACTERISTICS

Output Voltage Swing R

= 150 Ω 0.9 to 4.1 V

L

Output Current 50 mA
Short Circuit Current 95 mA

POWER SUPPLY

Operating Range 0, +4 +12 V
Total Quiescent Current 13 14 mA

Power Supply Rejection Ratio ∆V

–Input Current T
+Input Current T

Specifications subject to change without notice.

T

MIN–TMAX

= +1 V, VCM = +2.5 V 56 62 dB

S

MIN–TMAX

MIN–TMAX

14.5 15.5 mA

1 µA/V
6 µA/V

REV. B –3–

AD8004

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V

Internal Power Dissipation

2

1

Plastic DIP Package (N) . . . . . . . . . Observe Derating Curves

Small Outline Package (R) . . . . . . . . Observe Derating Curves

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±2.5 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range (N, R) . . . . . . . –65°C to +125°C

Operating Temperature Range (A Grade) . . . –40°C to +85°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for device in free air:

14-Lead Plastic DIP Package: θJA = 90°C/W
14-Lead SOIC Package: θJA = 140°C/W

ORDERING GUIDE

Model Range Description Option

AD8004AN –40°C to +85°C 14-Lead Plastic DIP N-14
AD8004AR-14 –40°C to +85°C 14-Lead SOIC R-14
AD8004AR-14-REEL –40°C to +85°C 13" Tape and Reel R-14
AD8004AR-14-REEL7 –40°C to +85°C 7" Tape and Reel R-14

Temperature Package Package

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the
AD8004 is limited by the associated rise in junction tempera­ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-

perature of the plastic, approximately +150°C. Exceeding this

limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.

Exceeding a junction temperature of +175°C for an extended

period can result in device failure.

While the AD8004 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem­perature is not exceeded under all conditions. To ensure proper
operation, it is necessary to observe the maximum power derat­ing curves (shown below in Figure 3).

2.0

14-LEAD PLASTIC DIP

1.5

1.0

0.5

MAXIMUM POWER DISSIPATION – Watts

0

–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90

AMBIENT TEMPERATURE – 8C

PACKAGE

14-LEAD SOIC

PACKAGE

TJ = +1508C

Figure 3. Maximum Power Dissipation vs. Temperature

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8004 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

–4–

REV. B

AD8004

FREQUENCY – MHz

+1

NORMALIZED FREQUENCY RESPONSE – dB

–4

–9

1 50010 40 100

–3

–2

–1

0

–5
–6

–7
–8

G = –1

G = –2

G = –10

VS = 65V
R

F

= 499V
VIN = 50mV rms
R

L

= 100V

N PACKAGE

604V

V

IN

604V

50V

50V

0.1mF

0.1mF

SCOPE
INPUT

10mF

10mF

50V

+V

S

–V

S

Figure 4. Test Circuit; Gain = +2

Figure 5.* 100 mV Step Response; G = +2, VS = ±2.5 V or ±5 V

SCOPE

V

249V

IN

61.9V

499V

50V

0.1mF

0.1mF

INPUT

10mF

10mF

50V

+V

S

–V

S

Figure 8. Test Circuit; Gain = –2

Figure 9.* 100 mV Step Response; G = –2, VS = ±2.5 V or±5 V

Figure 6.* Step Response; G = +2, VS = ±5 V

+2
+1

0

RL = 100V

–1

V

= 50mV (G = +1, +2)

IN

= 5mV (G = +10)

V

–2

IN

*NOTE: V

REV. B

–3

–4
–5

–6

–7

NORMALIZED FREQUENCY RESPONSE – dB

–8

1 50010

Figure 7. Frequency Response; G = +1, +2, +10, VS =±5 V

= ±2.5 V operation is identical to V

S

G = +1,
R

FREQUENCY – MHz

= 698V

F

G = +2,

= 604V

R

F

G = +10,
R

= 499V

F

40 100

= +5 V single supply operation.

S

Figure 10.* Step Response; G = –2, VS = ±5 V

Figure 11. Frequency Response, G = –1, –2, –10

–5–