Analog Devices AD8002ARM-REEL7, AD8002ARM-REEL, AD8002ARM, AD8002AR-REEL7, AD8002AR-REEL, AD8002AR, AD8002AN Datasheet
Dual 600 MHz, 50 mW
1M10M1G100M
0
–0.5
–0.1
–0.2
–0.3
–0.4
0.1
1
–4
–9
–5
–6
–7
–8
–3
–2
–1
0
NORMALIZED FLATNESS – dB
FREQUENCY – Hz
NORMALIZED FREQUENCY RESPONSE – dB
SIDE 1
SIDE 2
SIDE 1
SIDE 2
G = +2
R
L
= 100⍀
V
IN
= 50mV
a
FEATURES
Excellent Video Specifications (R
Gain Flatness 0.1 dB to 60 MHz
0.01% Differential Gain Error
0.02ⴗ Differential Phase Error
Low Power
5.5 mA/Amp Max Power Supply Current (55 mW)
High Speed and Fast Settling
600 MHz, –3 dB Bandwidth (G = +1)
500 MHz, –3 dB Bandwidth (G = +2)
1200 V/s Slew Rate
16 ns Settling Time to 0.1%
Low Distortion
–65 dBc THD, f
= 5 MHz
C
33 dBm Third Order Intercept, F1 = 10 MHz
–66 dB SFDR, f = 5 MHz
–60 dB Crosstalk, f = 5 MHz
High Output Drive
Over 70 mA Output Current
Drives Up to Eight Back-Terminated 75 ⍀ Loads
(Four Loads/Side) While Maintaining Good
Differential Gain/Phase Performance (0.01%/0.17ⴗ)
Available in 8-Lead Plastic DIP, SOIC and SOIC Packages
APPLICATIONS
A-to-D Driver
Video Line Driver
Differential Line Driver
Professional Cameras
Video Switchers
Special Effects
RF Receivers
= 150 ⍀, G = +2)
L
Current Feedback Amplifier
AD8002
FUNCTIONAL BLOCK DIAGRAM
8-Lead Plastic DIP, SOIC, and SOIC
OUT1
1
2
–IN1
3
+IN1
4
V–
AD8002
The outstanding bandwidth of 600 MHz along with 1200 V/µs
of slew rate make the AD8002 useful in many general purpose
high speed applications where dual power supplies of up to ±6 V
and single supplies from 6 V to 12 V are needed. The AD8002 is
available in the industrial temperature range of –40°C to +85°C.
V+
8
7
OUT2
–IN2
6
+IN2
5
PRODUCT DESCRIPTION
The AD8002 is a dual, low-power, high-speed amplifier designed
to operate on ±5 V supplies. The AD8002 features unique transimpedance linearization circuitry. This allows it to drive video
loads with excellent differential gain and phase performance on
only 50 mW of power per amplifier. The AD8002 is a current
feedback amplifier and features gain flatness of 0.1 dB to 60 MHz
while offering differential gain and phase error of 0.01% and
0.02°. This makes the AD8002 ideal for professional video
electronics such as cameras and video switchers. Additionally,
the AD8002’s low distortion and fast settling make it ideal for
buffer high-speed A-to-D converters.
The AD8002 offers low power of 5.5 mA/amplifier max (V
±5 V) and can run on a single 12 V power supply, while capable
of delivering over 70 mA of load current. It is offered in an
8-lead plastic DIP, SOIC, and µSOIC package. These features
make this amplifier ideal for portable and battery-powered
applications where size and power are critical.
REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
Storage Temperature Range N, R, RM . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
The maximum power that can be safely dissipated by the
AD8002 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8002 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
2.0
8-LEAD PLASTIC-DIP PACKAGE
8-LEAD SOIC PACKAGE
1.5
TJ = 150ⴗC
1.0
8-LEAD SOIC
0.5
PACKAGE
MAXIMUM POWER DISSIPATION – W
0
–50 80
–40
010 –10 –20 –30 20 30 40 50 60 70
AMBIENT TEMPERATURE – ⴗC
90
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
AD8002AN–40°C to +85°C8-Lead PDIPN-8Standard
AD8002AR–40°C to +85°C8-Lead SOICSO-8Standard
AD8002AR-REEL–40°C to +85°C8-Lead SOIC 13" REELSO-8Standard
AD8002AR-REEL7–40°C to +85°C8-Lead SOIC 7" REELSO-8Standard
AD8002ARM–40°C to +85°C8-Lead µSOICRM-8HFA
AD8002ARM-REEL–40°C to +85°C8-Lead µSOIC 13" REELRM-8HFA
AD8002ARM-REEL7–40°C to +85°C8-Lead µSOIC 7" REELRM-8HFA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
WARNING!
Although the AD8002 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ESD SENSITIVE DEVICE
REV. D
–3–
AD8002
–Typical Performance Characteristics
V
IN
PULSE
GENERATOR
TR/TF = 250ps
953⍀
10F
0.1F
0.1F
10F
75⍀
50⍀
+5V
AD8002
–5V
TPC 1. Test Circuit , Gain = +1
SIDE 1
SIDE 2
20mV
G = +1
100mV STEP
5ns
RL = 100⍀
V
IN
PULSE
GENERATOR
TR/TF = 250ps
750⍀
10F
0.1F
0.1F
10F
750⍀
75⍀
50⍀
+5V
AD8002
–5V
TPC 4. Test Circuit, Gain = +2
SIDE 1
SIDE 2
20mV
G = +2
100mV STEP
5ns
RL = 100⍀
TPC 2. 100 mV Step Response, G = +1
SIDE 1
SIDE 2
200mV
G = +1
1V STEP
5ns
TPC 3. 1 V Step Response, G = +1
TPC 5. 100 mV Step Response, G = +2
SIDE 1
SIDE 2
20mV
G = +2
1V STEP
5ns
TPC 6. 1 V Step Response, G = +2
–4–
REV. D
G = +2
–70
1M100M10M100k
–60
–100
–90
–80
OUTPUT SIDE 1
OUTPUT SIDE 2
CROSSTALK – dB
–50
–40
–30
–20
–110
–120
FREQUENCY – Hz
VIN = –4dBV
R
L
= 100⍀
V
S
= ⴞ5.0V
G = +2
R
F
= 750⍀
= 100⍀
R
L
V
= 50mV
IN
0.1
0
–0.1
–0.2
NORMALIZED FLATNESS – dB
–0.3
–0.4
–0.5
1M10M1G100M
681⍀
75⍀
50⍀
R
F
681⍀
FREQUENCY – Hz
50⍀
SIDE 2
SIDE 2
SIDE 1
SIDE 1
AD8002
1
0
–1
–2
–3
–4
–5
–6
–7
–8
NORMALIZED FREQUENCY RESPONSE – dB
–9
REV. D
TPC 7. Frequency Response and Flatness, G = +2
–50
G = +2
RL = 100⍀
–60
–70
–80
–90
DISTORTION – dBc
–100
–110
10k100M100k1M10M
2ND HARMONIC
3RD HARMONIC
FREQUENCY – Hz
TPC 8. Distortion vs. Frequency, G = +2, RL = 100
–60
G = +2
= 1k⍀
R
L
V
= 2V p-p
OUT
2ND HARMONIC
3RD HARMONIC
10k100M100k1M10M
FREQUENCY – Hz
–100
DISTORTION – dBc
–110
–120
–70
–80
–90
TPC 9. Distortion vs. Frequency, G = +2, RL = 1 k
TPC 10. Crosstalk (Output-to-Output) vs. Frequency
G = + 2
= 750⍀
SIDE 1
SIDE 2
NOTES: SIDE 1: VIN = 0V; 8mV/div RTO
SIDE 2: 1V STEP RTO; 400mV/div
Ω
Ω
TPC 11. Pulse Crosstalk, Worst Case, 1 V Step
0.02
0.01
0.00
–0.01
DIFF GAIN – %
–0.02
G = +2
= 750⍀
R
F
NTSC
0.08
0.06
0.04
0.02
0.00
DIFF PHASE – Degrees
234567891011
1
TPC 12. Differential Gain and Differential Phase
R
F
= 75⍀
R
C
= 100⍀
R
L
2 BACK-TERMINATED
LOADS (75⍀)
1 BACK-TERMINATED
2 BACK-TERMINATED
LOADS (75⍀)
1 BACK-TERMINATED
IRE
5ns
LOAD (150⍀)
LOAD (150⍀)
(per Amplifier)
–5–
AD8002
2
VIN = 50mV
GAIN – dB
G = +1
1
R
= 953⍀
F
R
= 100⍀
L
0
–1
–2
–3
–4
–5
–6
75⍀
50⍀
50⍀
953⍀
10M1G100M1M
FREQUENCY – Hz
SIDE 1
SIDE 2
TPC 13. Frequency Response, G = +1
–40
G = +1
R
= 100⍀
–50
–60
–70
–80
DISTORTION – dBc
–90
–100
V
L
OUT
= 2V p-p
100k100M10M1M10k
2ND HARMONIC
3RD HARMONIC
FREQUENCY – Hz
TPC 14. Distortion vs. Frequency, G = +1, RL = 100
6
3
0
–3
–6
–9
–12
–15
–18
–21
OUTPUT LEVEL – dBV
–12
–15
–18
INPUT LEVEL – dBV
–21
–24
–27
0
–3
–6
–9
G = +2
RF = 681⍀
V
= ⴞ5V
S
= 100⍀
R
L
1M
10M500M100M
FREQUENCY – Hz
TPC 16. Large Signal Frequency Response, G = +2
9
6
3
0
–3
–6
–9
–12
INPUT/OUTPUT LEVEL – dBV
–15
–18
–27
Ω
TPC 17. Large Signal Frequency Response, G = +1
75⍀
50⍀
50⍀
1.21k⍀
10M500M100M1M
FREQUENCY – Hz
RL = 100⍀
G = +1
= 1.21k⍀
R
F
–40
G = +1
R
= 1k⍀
L
–50
–60
DISTORTION – dBc
–100
–110
–70
–80
–90
100k100M10M1M10k
2ND HARMONIC
FREQUENCY – Hz
3RD HARMONIC
TPC 15. Distortion vs. Frequency, G = +1, RL = 1 k
45
40
35
30
25
20
GAIN – dB
15
10
5
0
–5
1M10M100M
Ω
TPC 18. Frequency Response, G = +10, G = +100
G = +100
= 1000⍀
R
F
G = +10
R
= 499⍀
F
FREQUENCY – Hz
–6–
VS = ⴞ5V
R
= 100⍀
L
1G
REV. D
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