Analog Devices AD8002ARM-REEL7, AD8002ARM-REEL, AD8002ARM, AD8002AR-REEL7, AD8002AR-REEL Datasheet

...
Dual 600 MHz, 50 mW
1M 10M 1G100M
0
0.5
0.1
0.2
0.3
0.4
0.1
1
4
9
5
6
7
8
3
2
1
0
NORMALIZED FLATNESS – dB
FREQUENCY – Hz
NORMALIZED FREQUENCY RESPONSE – dB
SIDE 1
SIDE 2
SIDE 1
SIDE 2
G = +2 R
L
= 100
V
IN
= 50mV
a
FEATURES Excellent Video Specifications (R
Gain Flatness 0.1 dB to 60 MHz
0.01% Differential Gain Error
0.02 Differential Phase Error
Low Power
5.5 mA/Amp Max Power Supply Current (55 mW)
High Speed and Fast Settling
600 MHz, –3 dB Bandwidth (G = +1) 500 MHz, –3 dB Bandwidth (G = +2) 1200 V/s Slew Rate 16 ns Settling Time to 0.1%
Low Distortion
–65 dBc THD, f
= 5 MHz
C
33 dBm Third Order Intercept, F1 = 10 MHz –66 dB SFDR, f = 5 MHz –60 dB Crosstalk, f = 5 MHz
High Output Drive
Over 70 mA Output Current Drives Up to Eight Back-Terminated 75 Loads
(Four Loads/Side) While Maintaining Good Differential Gain/Phase Performance (0.01%/0.17ⴗ)
Available in 8-Lead Plastic DIP, SOIC and SOIC Packages
APPLICATIONS A-to-D Driver Video Line Driver Differential Line Driver Professional Cameras Video Switchers Special Effects RF Receivers
= 150 , G = +2)
L
Current Feedback Amplifier
AD8002

FUNCTIONAL BLOCK DIAGRAM

8-Lead Plastic DIP, SOIC, and ␮SOIC
OUT1
1
2
–IN1
3
+IN1
4
V–
AD8002
The outstanding bandwidth of 600 MHz along with 1200 V/µs of slew rate make the AD8002 useful in many general purpose high speed applications where dual power supplies of up to ±6 V and single supplies from 6 V to 12 V are needed. The AD8002 is available in the industrial temperature range of –40°C to +85°C.
V+
8
7
OUT2
–IN2
6
+IN2
5

PRODUCT DESCRIPTION

The AD8002 is a dual, low-power, high-speed amplifier designed to operate on ±5 V supplies. The AD8002 features unique trans­impedance linearization circuitry. This allows it to drive video loads with excellent differential gain and phase performance on only 50 mW of power per amplifier. The AD8002 is a current feedback amplifier and features gain flatness of 0.1 dB to 60 MHz while offering differential gain and phase error of 0.01% and
0.02°. This makes the AD8002 ideal for professional video electronics such as cameras and video switchers. Additionally, the AD8002’s low distortion and fast settling make it ideal for buffer high-speed A-to-D converters.
The AD8002 offers low power of 5.5 mA/amplifier max (V ±5 V) and can run on a single 12 V power supply, while capable of delivering over 70 mA of load current. It is offered in an 8-lead plastic DIP, SOIC, and µSOIC package. These features make this amplifier ideal for portable and battery-powered applications where size and power are critical.
REV. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Figure 1. Frequency Response and Flatness, G = +2
SIDE 1
=
S
SIDE 2
200mV
Figure 2. 1 V Step Response, G = +1
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2001
G = +2 1V STEP
5ns
AD8002–SPECIFICATIONS
(@ TA = 25C, VS = 5 V, RL = 100 ⍀, R
1
= 75 ⍀, unless otherwise noted.)
C
Model AD8002A
Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth, N Package G = +2, R
G = +1, R
R Package G = +2, R
G = +1, R
RM Package G = +2, R
G = +1, R
= 750 500 MHz
F
= 1.21 k 600 MHz
F
= 681 500 MHz
F
= 953 600 MHz
F
= 681 500 MHz
F
= 1 k 600 MHz
F
Bandwidth for 0.1 dB Flatness
N Package G = +2, RF = 750 60 MHz R Package G = +2, R RM Package G = +2, R
Slew Rate G = +2, V
G = –1, V
Settling Time to 0.1% G = +2, V
= 681 90 MHz
F
= 681 60 MHz
F
= 2 V Step 700 V/µs
O
= 2 V Step 1200 V/µs
O
= 2 V Step 16 ns
O
Rise and Fall Time G = +2, VO = 2 V Step, RF = 750 2.4 ns
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion f
= 5 MHz, VO = 2 V p-p –65 dBc
C
G = +2, R
= 100
L
Crosstalk, Output to Output f = 5 MHz, G = +2 –60 dB Input Voltage Noise f = 10 kHz, R
= 0 2.0 nV/√Hz
C
Input Current Noise f = 10 kHz, +In 2.0 pA/Hz
–In 18 pA/Hz
Differential Gain Error NTSC, G = +2, R Differential Phase Error NTSC, G = +2, R
= 150 0.01 %
L
= 150 0.02 Degree
L
Third Order Intercept f = 10 MHz 33 dBm 1 dB Gain Compression f = 10 MHz 14 dBm SFDR f = 5 MHz –66 dB
DC PERFORMANCE
Input Offset Voltage 2.0 6 mV
T
MIN–TMAX
2.0 9 mV
Offset Drift 10 µV/°C –Input Bias Current 5.0 25 ±µA
T
MIN–TMAX
35 ±µA
+Input Bias Current 3.0 6.0 ±µA
Open Loop Transresistance V
T
MIN–TMAX
= ±2.5 V 250 900 k
O
T
MIN–TMAX
175 k
10 ±µA
INPUT CHARACTERISTICS
Input Resistance +Input 10 M
–Input 50
Input Capacitance +Input 1.5 pF Input Common-Mode Voltage Range 3.2 ±V Common-Mode Rejection Ratio
Offset Voltage V –Input Current V +Input Current VCM = ±2.5 V, T
= ±2.5 V 49 54 dB
CM
= ±2.5 V, T
CM
MIN–TMAX
MIN–TMAX
0.3 1.0 µA/V
0.2 0.9 µA/V
OUTPUT CHARACTERISTICS
Output Voltage Swing R Output Current Short Circuit Current
2
2
= 150 2.7 3.1 ±V
L
70 mA
85 110 mA
POWER SUPPLY
Operating Range ±3.0 ±6.0 V Quiescent Current/Both Amplifiers T Power Supply Rejection Ratio +V
–Input Current T +Input Current T
NOTES
1
RC is recommended to reduce peaking and minimize input reflections at frequencies above 300 MHz. However, R
2
Output current is limited by the maximum power dissipation in the package. See the power derating curves.
Specifications subject to change without notice.
MIN–TMAX
= +4 V to +6 V, –VS = –5 V 60 75 dB
S
= – 4 V to –6 V, +VS = +5 V 49 56 dB
–V
S
MIN–TMAX
MIN–TMAX
is not required.
C
10.0 11.5 mA
0.5 2.5 µA/V
0.1 0.5 µA/V
–2–
REV. D
AD8002

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.2 V
Internal Power Dissipation
2
1
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . . . . .1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . 0.9 W
µSOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . . . . .0.6 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R, RM . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead Plastic DIP Package: θJA = 90°C/W 8-Lead SOIC Package: θJA = 155°C/W 8-Lead µSOIC Package: θJA = 200°C/W

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8002 is limited by the associated rise in junction tempera­ture. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition tem­perature of the plastic, approximately 150°C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure.
While the AD8002 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.
2.0
8-LEAD PLASTIC-DIP PACKAGE
8-LEAD SOIC PACKAGE
1.5
TJ = 150ⴗC
1.0
8-LEAD ␮SOIC
0.5
PACKAGE
MAXIMUM POWER DISSIPATION – W
0
50 80
40
010 –10 –20 –30 20 30 40 50 60 70
AMBIENT TEMPERATURE – ⴗC
90
Figure 3. Plot of Maximum Power Dissipation vs. Temperature

ORDERING GUIDE

Model Temperature Range Package Description Package Option Brand Code
AD8002AN –40°C to +85°C 8-Lead PDIP N-8 Standard AD8002AR –40°C to +85°C 8-Lead SOIC SO-8 Standard AD8002AR-REEL –40°C to +85°C 8-Lead SOIC 13" REEL SO-8 Standard AD8002AR-REEL7 –40°C to +85°C 8-Lead SOIC 7" REEL SO-8 Standard AD8002ARM –40°C to +85°C 8-Lead µSOIC RM-8 HFA AD8002ARM-REEL –40°C to +85°C 8-Lead µSOIC 13" REEL RM-8 HFA AD8002ARM-REEL7 –40°C to +85°C 8-Lead µSOIC 7" REEL RM-8 HFA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection.
WARNING!
Although the AD8002 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
ESD SENSITIVE DEVICE
REV. D
–3–
AD8002
–Typical Performance Characteristics
V
IN
PULSE
GENERATOR
TR/TF = 250ps
953
10F
0.1F
0.1F
10F
75
50
+5V
AD8002
–5V
TPC 1. Test Circuit , Gain = +1
SIDE 1
SIDE 2
20mV
G = +1 100mV STEP
5ns
RL = 100
V
IN
PULSE
GENERATOR
TR/TF = 250ps
750
10F
0.1F
0.1F
10F
750
75
50
+5V
AD8002
–5V
TPC 4. Test Circuit, Gain = +2
SIDE 1
SIDE 2
20mV
G = +2 100mV STEP
5ns
RL = 100
TPC 2. 100 mV Step Response, G = +1
SIDE 1
SIDE 2
200mV
G = +1 1V STEP
5ns
TPC 3. 1 V Step Response, G = +1
TPC 5. 100 mV Step Response, G = +2
SIDE 1
SIDE 2
20mV
G = +2 1V STEP
5ns
TPC 6. 1 V Step Response, G = +2
–4–
REV. D
G = +2
–70
1M 100M10M100k
60
100
90
80
OUTPUT SIDE 1
OUTPUT SIDE 2
CROSSTALK – dB
50
40
30
20
110
120
FREQUENCY – Hz
VIN = –4dBV R
L
= 100
V
S
= 5.0V
G = +2 R
F
= 750
= 100
R
L
V
= 50mV
IN
0.1
0
0.1
0.2
NORMALIZED FLATNESS dB
0.3
0.4
0.5
1M 10M 1G100M
681
75
50
R
F
681
FREQUENCY – Hz
50
SIDE 2
SIDE 2
SIDE 1
SIDE 1
AD8002
1
0
1
2
3
4
5
6
7
8
NORMALIZED FREQUENCY RESPONSE dB
9
REV. D
TPC 7. Frequency Response and Flatness, G = +2
–50
G = +2 RL = 100
60
70
80
90
DISTORTION dBc
100
110
10k 100M100k 1M 10M
2ND HARMONIC
3RD HARMONIC
FREQUENCY – Hz
TPC 8. Distortion vs. Frequency, G = +2, RL = 100
–60
G = +2
= 1k
R
L
V
= 2V p-p
OUT
2ND HARMONIC
3RD HARMONIC
10k 100M100k 1M 10M
FREQUENCY – Hz
–100
DISTORTION – dBc
110
120
70
80
90
TPC 9. Distortion vs. Frequency, G = +2, RL = 1 k
TPC 10. Crosstalk (Output-to-Output) vs. Frequency
G = + 2
= 750
SIDE 1
SIDE 2
NOTES: SIDE 1: VIN = 0V; 8mV/div RTO
SIDE 2: 1V STEP RTO; 400mV/div
TPC 11. Pulse Crosstalk, Worst Case, 1 V Step
0.02
0.01
0.00
–0.01
DIFF GAIN – %
–0.02
G = +2
= 750
R
F
NTSC
0.08
0.06
0.04
0.02
0.00
DIFF PHASE – Degrees
234567891011
1
TPC 12. Differential Gain and Differential Phase
R
F
= 75
R
C
= 100
R
L
2 BACK-TERMINATED
LOADS (75⍀)
1 BACK-TERMINATED
2 BACK-TERMINATED
LOADS (75⍀)
1 BACK-TERMINATED
IRE
5ns
LOAD (150)
LOAD (150)
(per Amplifier)
–5–
AD8002
2
VIN = 50mV
GAIN – dB
G = +1
1
R
= 953
F
R
= 100
L
0
1
2
3
4
5
6
75
50
50
953
10M 1G100M1M
FREQUENCY – Hz
SIDE 1
SIDE 2
TPC 13. Frequency Response, G = +1
–40
G = +1 R
= 100
50
60
70
80
DISTORTION dBc
90
100
V
L
OUT
= 2V p-p
100k 100M10M1M10k
2ND HARMONIC
3RD HARMONIC
FREQUENCY – Hz
TPC 14. Distortion vs. Frequency, G = +1, RL = 100
6
3
0
3
6
9
12
15
18
21
OUTPUT LEVEL dBV
12
15
18
INPUT LEVEL dBV
21
24
27
0
3
6
9
G = +2 RF = 681
V
= 5V
S
= 100
R
L
1M
10M 500M100M
FREQUENCY – Hz
TPC 16. Large Signal Frequency Response, G = +2
9
6
3
0
3
6
9
12
INPUT/OUTPUT LEVEL dBV
15
18
27
TPC 17. Large Signal Frequency Response, G = +1
75
50
50
1.21k
10M 500M100M1M
FREQUENCY – Hz
RL = 100 G = +1
= 1.21k
R
F
–40
G = +1
R
= 1k
L
50
60
DISTORTION dBc
100
110
70
80
90
100k 100M10M1M10k
2ND HARMONIC
FREQUENCY – Hz
3RD HARMONIC
TPC 15. Distortion vs. Frequency, G = +1, RL = 1 k
45
40
35
30
25
20
GAIN – dB
15
10
5
0
–5
1M 10M 100M
TPC 18. Frequency Response, G = +10, G = +100
G = +100
= 1000
R
F
G = +10 R
= 499
F
FREQUENCY – Hz
–6–
VS = 5V R
= 100
L
1G
REV. D
Loading...
+ 14 hidden pages