Analog Devices AD8002 Datasheet

Dual 600 MHz, 50 mW
1M 10M 1G100M
0
–0.5
–0.1
–0.2
–0.3
–0.4
0.1
1
–4
–9
–5
–6
–7
–8
–3
–2
–1
0
NORMALIZED FLATNESS – dB
FREQUENCY – Hz
NORMALIZED FREQUENCY RESPONSE – dB
G = +2 R
L
= 100V
VIN = 50mV
SIDE 1
SIDE 2
SIDE 1
SIDE 2
a
FEATURES Excellent Video Specifications (R
Gain Flatness 0.1 dB to 60 MHz
0.01% Differential Gain Error
0.02 Differential Phase Error
Low Power
5.5 mA/Amp Max Power Supply Current (55 mW)
High Speed and Fast Settling
600 MHz, –3 dB Bandwidth (G = +1) 500 MHz, –3 dB Bandwidth (G = +2) 1200 V/s Slew Rate 16 ns Settling Time to 0.1%
Low Distortion
–65 dBc THD, f
= 5 MHz
C
33 dBm 3rd Order Intercept, F –66 dB SFDR, f = 5 MHz –60 dB Crosstalk, f = 5 MHz
High Output Drive
Over 70 mA Output Current Drives Up to Eight Back-Terminated 75 Loads
(Four Loads/Side) While Maintaining Good Differential Gain/Phase Performance (0.01%/0.17ⴗ)
Available in 8-Lead Plastic DIP, SOIC and SOIC Packages
= 150 , G = +2)
L
= 10 MHz
1
Current Feedback Amplifier
AD8002
FUNCTIONAL BLOCK DIAGRAM
8-Lead Plastic DIP, SOIC and ␮SOIC
OUT1
1
2
–IN1
3
+IN1
4
V–
AD8002
The outstanding bandwidth of 600 MHz along with 1200 V/µs
of slew rate make the AD8002 useful in many general purpose
high speed applications where dual power supplies of up to ±6 V
and single supplies from 6 V to 12 V are needed. The AD8002 is
available in the industrial temperature range of –40°C to +85°C.
V+
8
7
OUT2
–IN2
6
+IN2
5
APPLICATIONS A-to-D Driver Video Line Driver Differential Line Driver Professional Cameras Video Switchers Special Effects RF Receivers
PRODUCT DESCRIPTION
The AD8002 is a dual, low power, high speed amplifier de-
signed to operate on ±5 V supplies. The AD8002 features
unique transimpedance linearization circuitry. This allows it to drive video loads with excellent differential gain and phase per­formance on only 50 mW of power per amplifier. The AD8002 is a current feedback amplifier and features gain flatness of 0.1 dB to 60 MHz while offering differential gain and phase error of
0.01% and 0.02°. This makes the AD8002 ideal for professional
video electronics such as cameras and video switchers. Addition­ally, the AD8002’s low distortion and fast settling make it ideal for buffer high speed A-to-D converters.
The AD8002 offers low power of 5.5 mA/amplifier max (V
±5 V) and can run on a single +12 V power supply, while ca-
pable of delivering over 70 mA of load current. It is offered in
an 8-lead plastic DIP, SOIC and µSOIC package. These features
make this amplifier ideal for portable and battery powered appli­cations where size and power is critical.
REV. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
=
S
Figure 1. Frequency Response and Flatness, G = +2
Figure 2. 1 V Step Response, G = +1
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1999
AD8002–SPECIFICATIONS
(@ TA = + 25C, VS = 5 V, RL = 100 ⍀, R
1
= 75 ⍀, unless otherwise noted)
C
Model AD8002A
Conditions Min Typ Max Units
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth, N Package G = +2, R
G = +1, R
R Package G = +2, R
G = +1, R
RM Package G = +2, R
G = +1, R
= 750 500 MHz
F
= 1.21 k 600 MHz
F
= 681 500 MHz
F
= 953 600 MHz
F
= 681 500 MHz
F
= 1 k 600 MHz
F
Bandwidth for 0.1 dB Flatness
N Package G = +2, R R Package G = +2, R RM Package G = +2, R
Slew Rate G = +2, V
G = –1, V Settling Time to 0.1% G = +2, V Rise & Fall Time G = +2, VO = 2 V Step, R
= 750 60 MHz
F
= 681 90 MHz
F
= 681 60 MHz
F
= 2 V Step 700 V/µs
O
= 2 V Step 1200 V/µs
O
= 2 V Step 16 ns
O
= 750 2.4 ns
F
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion f
= 5 MHz, VO = 2 V p-p –65 dBc
C
G = +2, R
= 100
L
Crosstalk, Output to Output f = 5 MHz, G = +2 –60 dB Input Voltage Noise f = 10 kHz, R
= 0 2.0 nV/√Hz
C
Input Current Noise f = 10 kHz, +In 2.0 pA/Hz
–In 18 pA/Hz
Differential Gain Error NTSC, G = +2, R Differential Phase Error NTSC, G = +2, R
= 150 0.01 %
L
= 150 0.02 Degree
L
Third Order Intercept f = 10 MHz 33 dBm 1 dB Gain Compression f = 10 MHz 14 dBm SFDR f = 5 MHz –66 dB
DC PERFORMANCE
Input Offset Voltage 2.0 6 mV
T
MIN–TMAX
2.0 9 mV
Offset Drift 10 µV/°C –Input Bias Current 5.0 25 ±µA
T
MIN–TMAX
35 ±µA
+Input Bias Current 3.0 6.0 ±µA
10 ±µA
Open Loop Transresistance V
T
MIN–TMAX
= ±2.5 V 250 900 k
O
T
MIN–TMAX
175 k
INPUT CHARACTERISTICS
Input Resistance +Input 10 M
–Input 50
Input Capacitance +Input 1.5 pF
Input Common-Mode Voltage Range 3.2 ±V
Common-Mode Rejection Ratio
Offset Voltage V –Input Current V +Input Current V
= ±2.5 V 49 54 dB
CM
= ±2.5 V, T
CM
= ±2.5 V, T
CM
MIN–TMAX
MIN–TMAX
0.3 1.0 µA/V
0.2 0.9 µA/V
OUTPUT CHARACTERISTICS
Output Voltage Swing R Output Current Short Circuit Current
2
2
= 150 2.7 3.1 ±V
L
70 mA
85 110 mA
POWER SUPPLY
Operating Range ±3.0 ±6.0 V
Quiescent Current/Both Amplifiers T Power Supply Rejection Ratio +V
–Input Current T +Input Current T
NOTES
1
RC is recommended to reduce peaking and minimize input reflections at frequencies above 300 MHz. However, R
2
Output current is limited by the maximum power dissipation in the package. See the power derating curves.
Specifications subject to change without notice.
MIN–TMAX
= +4 V to +6 V, –VS = –5 V 60 75 dB
S
= – 4 V to –6 V, +VS = +5 V 49 56 dB
–V
S
MIN–TMAX
MIN–TMAX
is not required.
C
10.0 11.5 mA
0.5 2.5 µA/V
0.1 0.5 µA/V
–2–
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AD8002
2.0
0 –50 80
1.5
0.5
–40
1.0
010–10–20–30 20 30 40 50 60 70 90
MAXIMUM POWER DISSIPATION – Watts
AMBIENT TEMPERATURE – 8C
8-LEAD PLASTIC-DIP PACKAGE
8-LEAD SOIC PACKAGE
TJ = +1508C
8-LEAD mSOIC
PACKAGE
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
1
Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . .0.9 W
µSOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range N, R, RM . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead Plastic DIP Package: θJA = 90°C/W 8-Lead SOIC Package: θJA = 155°C/W 8-Lead µSOIC Package: θJA = 200°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8002 is limited by the associated rise in junction tempera­ture. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately +150°C. Exceeding this
limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of +175°C for an extended
period can result in device failure.
While the AD8002 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction
temperature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum power derating curves.
Figure 3. Plot of Maximum Power Dissipation vs. Temperature
ORDERING GUIDE
Model Temperature Range Package Description Package Option Brand Code
AD8002AN –40°C to +85°C 8-Lead PDIP N-8 Standard AD8002AR –40°C to +85°C 8-Lead SOIC SO-8 Standard AD8002AR-REEL –40°C to +85°C 8-Lead SOIC 13" REEL SO-8 Standard AD8002AR-REEL7 –40°C to +85°C 8-Lead SOIC 7" REEL SO-8 Standard AD8002ARM –40°C to +85°C 8-Lead µSOIC RM-8 HFA AD8002ARM-REEL –40°C to +85°C 8-Lead µSOIC 13" REEL RM-8 HFA AD8002ARM-REEL7 –40°C to +85°C 8-Lead µSOIC 7" REEL RM-8 HFA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8002 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
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–3–
AD8002
PULSE
GENERATOR
750V
+5V
RL = 100V
–5V
50V
V
IN
0.1mF
10mF
AD8002
0.1mF
10mF
TR/TF = 250ps
75V
750V
V
GENERATOR
TR/TF = 250ps
953V
10mF
0.1mF
0.1mF
10mF
IN
PULSE
75V
50V
+5V
AD8002
–5V
Figure 4. Test Circuit , Gain = +1
RL = 100V
Figure 7. Test Circuit, Gain = +2
Figure 5. 100 mV Step Response, G = +1
Figure 6. 1 V Step Response, G = +1
Figure 8. 100 mV Step Response, G = +2
Figure 9. 1 V Step Response, G = +2
–4–
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1
–70
1M 100M10M100k
–60
–100
–90
–80
OUTPUT SIDE 1
OUTPUT SIDE 2
CROSSTALK – dB
–50
–40
–30
–20
–110
–120
FREQUENCY – Hz
VIN = –4dBV R
L
= 100V
V
S
= 65.0V
G = +2 R
F
= 750V
0.02
0.06
0.02
1
0.04
–0.02
0.08
–0.01
0.00
0.01
IRE
DIFF GAIN – %
DIFF PHASE – Degrees
0.00
G = +2 RF = 750V
NTSC
234567891011
2 BACK TERMINATED
LOADS (75V)
1 BACK TERMINATED
LOAD (150V)
2 BACK TERMINATED
LOADS (75V)
1 BACK TERMINATED
LOAD (150V)
G = +2 RL = 100V
= 50mV
V
IN
0.1
0
–0.1
–0.2
NORMALIZED FLATNESS – dB
–0.3
–0.4
–0.5
1M 10M 1G100M
50V
681V
75V
50V
R
F
681V
FREQUENCY – Hz
SIDE 1
SIDE 2
SIDE 1
SIDE 2
0
–1
–2
–3
–4
–5
–6
–7
–8
–9
Figure 10. Frequency Response and Flatness, G = +2
–50
G = +2 RL = 100V
–60
–70
–80
–90
DISTORTION – dBc
2ND HARMONIC
3RD HARMONIC
AD8002
NORMALIZED FREQUENCY RESPONSE – dB
Figure 13. Crosstalk (Output-to-Output) vs. Frequency
REV. C
–100
–110
10k 100M100k 1M 10M
FREQUENCY – Hz
Figure 11. Distortion vs. Frequency, G = +2, RL = 100
–60
G = +2 RL = 1kV
= 2V p-p
V
–70
OUT
–80
–90
–100
DISTORTION – dBc
–110
–120
10k 100M100k 1M 10M
2ND HARMONIC
FREQUENCY – Hz
3RD HARMONIC
Figure 12. Distortion vs. Frequency, G = +2, RL = 1 k
NOTES: SIDE 1: VIN = 0V; 8mV/div RTO
SIDE 2: 1V STEP RTO; 400mV/div
Figure 14. Pulse Crosstalk, Worst Case, 1 V Step
Figure 15. Differential Gain and Differential Phase (per Amplifier)
–5–
AD8002
0
–3
–27
10M 500M100M
–18
–21
–24
–15
–12
–9
–6
INPUT LEVEL – dBV
FREQUENCY – Hz
+6
+3
0
–3
–6
–9
–12
–15
–18
–21
OUTPUT LEVEL – dBV
1M
G = +2 RF = 681V
V
S
= 65V
R
L
= 100V
INPUT/OUTPUT LEVEL – dBV
FREQUENCY – Hz
+6
+3
–27
–12
–15
–18
–9
–6
–3
0
+9
10M 500M100M1M
RL = 100V G = +1
R
F
= 1.21kV
75V
50V
50V
1.21kV
+2
+1
0
–1
–2
GAIN – dB
–3
–4
–5
VIN = 50mV G = +1
= 953V
R
F
= 100V
R
L
50V
75V
SIDE 1
SIDE 2
50V
953V
–6
Figure 16. Frequency Response, G = +1
–40
–50
–60
–70
–80
DISTORTION – dBc
–90
–100
Figure 17. Distortion vs. Frequency, G = +1, RL = 100
–40
–50
–60
–70
–80
DISTORTION – dBc
–90
–100
–110
Figure 18. Distortion vs. Frequency, G = +1, RL = 1 k
10M 1G100M1M
FREQUENCY – Hz
G = +1 RL = 100V
V
= 2V p-p
OUT
2ND HARMONIC
100k 100M10M1M10k
FREQUENCY – Hz
G = +1 R
= 1kV
L
2ND HARMONIC
100k 100M10M1M10k
FREQUENCY – Hz
3RD HARMONIC
3RD HARMONIC
Figure 19. Large Signal Frequency Response, G = +2
Figure 20. Large Signal Frequency Response, G = +1
+45
+40
+35 +30
+25 +20
GAIN – dB
+15
+10
+5
0
–5
1M 10M 100M
G = +100 RF = 1000V
G = +10 RF = 499V
FREQUENCY – Hz
VS = 65V RL = 100V
Figure 21. Frequency Response, G = +10, G = +100
–6–
1G
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