600 MHz, –3 dB Bandwidth (G = +1)
500 MHz, –3 dB Bandwidth (G = +2)
1200 V/s Slew Rate
16 ns Settling Time to 0.1%
Low Distortion
–65 dBc THD, f
= 5 MHz
C
33 dBm 3rd Order Intercept, F
–66 dB SFDR, f = 5 MHz
–60 dB Crosstalk, f = 5 MHz
High Output Drive
Over 70 mA Output Current
Drives Up to Eight Back-Terminated 75 ⍀ Loads
(Four Loads/Side) While Maintaining Good
Differential Gain/Phase Performance (0.01%/0.17ⴗ)
Available in 8-Lead Plastic DIP, SOIC and SOIC Packages
= 150 ⍀, G = +2)
L
= 10 MHz
1
Current Feedback Amplifier
AD8002
FUNCTIONAL BLOCK DIAGRAM
8-Lead Plastic DIP, SOIC and SOIC
OUT1
1
2
–IN1
3
+IN1
4
V–
AD8002
The outstanding bandwidth of 600 MHz along with 1200 V/µs
of slew rate make the AD8002 useful in many general purpose
high speed applications where dual power supplies of up to ±6 V
and single supplies from 6 V to 12 V are needed. The AD8002 is
available in the industrial temperature range of –40°C to +85°C.
V+
8
7
OUT2
–IN2
6
+IN2
5
APPLICATIONS
A-to-D Driver
Video Line Driver
Differential Line Driver
Professional Cameras
Video Switchers
Special Effects
RF Receivers
PRODUCT DESCRIPTION
The AD8002 is a dual, low power, high speed amplifier de-
signed to operate on ±5 V supplies. The AD8002 features
unique transimpedance linearization circuitry. This allows it to
drive video loads with excellent differential gain and phase performance on only 50 mW of power per amplifier. The AD8002
is a current feedback amplifier and features gain flatness of 0.1 dB
to 60 MHz while offering differential gain and phase error of
0.01% and 0.02°. This makes the AD8002 ideal for professional
video electronics such as cameras and video switchers. Additionally, the AD8002’s low distortion and fast settling make it ideal
for buffer high speed A-to-D converters.
The AD8002 offers low power of 5.5 mA/amplifier max (V
±5 V) and can run on a single +12 V power supply, while ca-
pable of delivering over 70 mA of load current. It is offered in
an 8-lead plastic DIP, SOIC and µSOIC package. These features
make this amplifier ideal for portable and battery powered applications where size and power is critical.
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
Storage Temperature Range N, R, RM . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
The maximum power that can be safely dissipated by the
AD8002 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately +150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of +175°C for an extended
period can result in device failure.
While the AD8002 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
AD8002AN–40°C to +85°C8-Lead PDIPN-8Standard
AD8002AR–40°C to +85°C8-Lead SOICSO-8Standard
AD8002AR-REEL–40°C to +85°C8-Lead SOIC 13" REELSO-8Standard
AD8002AR-REEL7–40°C to +85°C8-Lead SOIC 7" REELSO-8Standard
AD8002ARM–40°C to +85°C8-Lead µSOICRM-8HFA
AD8002ARM-REEL–40°C to +85°C8-Lead µSOIC 13" REELRM-8HFA
AD8002ARM-REEL7–40°C to +85°C8-Lead µSOIC 7" REELRM-8HFA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8002 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. C
–3–
AD8002
PULSE
GENERATOR
750V
+5V
RL = 100V
–5V
50V
V
IN
0.1mF
10mF
AD8002
0.1mF
10mF
TR/TF = 250ps
75V
750V
V
GENERATOR
TR/TF = 250ps
953V
10mF
0.1mF
0.1mF
10mF
IN
PULSE
75V
50V
+5V
AD8002
–5V
Figure 4. Test Circuit , Gain = +1
RL = 100V
Figure 7. Test Circuit, Gain = +2
Figure 5. 100 mV Step Response, G = +1
Figure 6. 1 V Step Response, G = +1
Figure 8. 100 mV Step Response, G = +2
Figure 9. 1 V Step Response, G = +2
–4–
REV. C
1
–70
1M100M10M100k
–60
–100
–90
–80
OUTPUT SIDE 1
OUTPUT SIDE 2
CROSSTALK – dB
–50
–40
–30
–20
–110
–120
FREQUENCY – Hz
VIN = –4dBV
R
L
= 100V
V
S
= 65.0V
G = +2
R
F
= 750V
0.02
0.06
0.02
1
0.04
–0.02
0.08
–0.01
0.00
0.01
IRE
DIFF GAIN – %
DIFF PHASE – Degrees
0.00
G = +2
RF = 750V
NTSC
234567891011
2 BACK TERMINATED
LOADS (75V)
1 BACK TERMINATED
LOAD (150V)
2 BACK TERMINATED
LOADS (75V)
1 BACK TERMINATED
LOAD (150V)
G = +2
RL = 100V
= 50mV
V
IN
0.1
0
–0.1
–0.2
NORMALIZED FLATNESS – dB
–0.3
–0.4
–0.5
1M10M1G100M
50V
681V
75V
50V
R
F
681V
FREQUENCY – Hz
SIDE 1
SIDE 2
SIDE 1
SIDE 2
0
–1
–2
–3
–4
–5
–6
–7
–8
–9
Figure 10. Frequency Response and Flatness, G = +2
–50
G = +2
RL = 100V
–60
–70
–80
–90
DISTORTION – dBc
2ND HARMONIC
3RD HARMONIC
AD8002
NORMALIZED FREQUENCY RESPONSE – dB
Figure 13. Crosstalk (Output-to-Output) vs. Frequency
REV. C
–100
–110
10k100M100k1M10M
FREQUENCY – Hz
Figure 11. Distortion vs. Frequency, G = +2, RL = 100
–60
G = +2
RL = 1kV
= 2V p-p
V
–70
OUT
–80
–90
–100
DISTORTION – dBc
–110
–120
10k100M100k1M10M
2ND HARMONIC
FREQUENCY – Hz
3RD HARMONIC
Figure 12. Distortion vs. Frequency, G = +2, RL = 1 k
NOTES: SIDE 1: VIN = 0V; 8mV/div RTO
SIDE 2: 1V STEP RTO; 400mV/div
Ω
Ω
Figure 14. Pulse Crosstalk, Worst Case, 1 V Step
Figure 15. Differential Gain and Differential Phase
(per Amplifier)
–5–
AD8002
0
–3
–27
10M500M100M
–18
–21
–24
–15
–12
–9
–6
INPUT LEVEL – dBV
FREQUENCY – Hz
+6
+3
0
–3
–6
–9
–12
–15
–18
–21
OUTPUT LEVEL – dBV
1M
G = +2
RF = 681V
V
S
= 65V
R
L
= 100V
INPUT/OUTPUT LEVEL – dBV
FREQUENCY – Hz
+6
+3
–27
–12
–15
–18
–9
–6
–3
0
+9
10M500M100M1M
RL = 100V
G = +1
R
F
= 1.21kV
75V
50V
50V
1.21kV
+2
+1
0
–1
–2
GAIN – dB
–3
–4
–5
VIN = 50mV
G = +1
= 953V
R
F
= 100V
R
L
50V
75V
SIDE 1
SIDE 2
50V
953V
–6
Figure 16. Frequency Response, G = +1
–40
–50
–60
–70
–80
DISTORTION – dBc
–90
–100
Figure 17. Distortion vs. Frequency, G = +1, RL = 100
–40
–50
–60
–70
–80
DISTORTION – dBc
–90
–100
–110
Figure 18. Distortion vs. Frequency, G = +1, RL = 1 k
10M1G100M1M
FREQUENCY – Hz
G = +1
RL = 100V
V
= 2V p-p
OUT
2ND HARMONIC
100k100M10M1M10k
FREQUENCY – Hz
G = +1
R
= 1kV
L
2ND HARMONIC
100k100M10M1M10k
FREQUENCY – Hz
3RD HARMONIC
3RD HARMONIC
Figure 19. Large Signal Frequency Response, G = +2
Ω
Ω
Figure 20. Large Signal Frequency Response, G = +1
+45
+40
+35
+30
+25
+20
GAIN – dB
+15
+10
+5
0
–5
1M10M100M
G = +100
RF = 1000V
G = +10
RF = 499V
FREQUENCY – Hz
VS = 65V
RL = 100V
Figure 21. Frequency Response, G = +10, G = +100
–6–
1G
REV. C
Loading...
+ 12 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.