Analog Devices AD7938 9 Datasheet

V
8-Channel, 1.5 MSPS, 12-Bit and 10-Bit

FEATURES

Fast throughput rate: 1.5 MSPS Specified for V Low power
6 mW max at 1.5 MSPS with 3 V supplies
13.5 mW max at 1.5 MSPS with 5 V supplies 8 analog input channels with a sequencer Software configurable analog inputs
8-channel single-ended inputs 4-channel fully differential inputs 4-channel pseudo-differential inputs
7-channel pseudo-differential inputs Accurate on-chip 2.5 V reference ±0.2% max @ 25°C, 25 ppm/°C max 70 dB SINAD at 50 kHz input frequency No pipeline delays High speed parallel interface—word/byte modes Full shutdown mode: 2 µA max 32-lead LFCSP and TQFP package

GENERAL DESCRIPTION

The AD7938/AD7939 are 12-bit and 10-bit, high speed, low power, successive approximation (SAR) ADCs. The parts operate from a single 2.7 V to 5.25 V power supply and feature throughput rates up to 1.5 MSPS. The parts contain a low noise, wide bandwidth, differential track-and-hold amplifier that can handle input frequencies up to 50 MHz.
The AD7938/AD7939 feature eight analog input channels with a channel sequencer that allow a preprogrammed selection of channels to be converted sequentially. These parts can operate with either single-ended, fully differential, or pseudo­differential analog inputs.
The conversion process and data acquisition are controlled using standard control inputs that allow easy interfacing with microprocessors and DSPs. The input signal is sampled on the falling edge of
this point.
The AD7938/AD7939 have an accurate on-chip 2.5 V reference that can be used as the reference source for the analog-to-digital conversion. Alternatively, this pin can be overdriven to provide an external reference.
of 2.7 V to 5.25 V
DD
CONVST
and the conversion is also initiated at
Parallel ADCs with a Sequencer
AD7938/AD7939

FUNCTIONAL BLOCK DIAGRAM

V
AGND
DD
V
REFIN/
REFOUT
VIN0
VIN7
SEQUENCER
PARALLEL INTERFACE/CONTROL REGISTER
DB0 DB11
I/P
MUX
2.5V
VREF
T/H
Figure 1.
These parts use advanced design techniques to achieve very low power dissipation at high throughput rates. They also feature flexible power management options. An on-chip control register allows the user to set up different operating conditions, including analog input range and configuration, output coding, power management, and channel sequencing.

PRODUCT HIGHLIGHTS

1. High throughput with low power consumption.
2. Eight analog inputs with a channel sequencer.
3. Accurate on-chip 2.5 V reference.
4. Software configurable analog inputs. Single-ended, pseudo-
differential, or fully differential analog inputs that are software selectable.
5. Single-supply operation with V
function allows the parallel interface to connect directly to 3 V, or 5 V processor systems independent of V
6. No pipeline delay.
7. Accurate control of the sampling instant via a
input and once off conversion control.
AD7938/AD7939
12-/10-BIT SAR ADC
AND
CONTROL
CS DGNDRD WR W/B
function. The V
DRIVE
CLKIN CONVST BUSY
V
DRIVE
DRIVE
.
DD
CONVST
03715-0-001
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
www.analog.com
AD7938/AD7939

TABLE OF CONTENTS

AD7938—Specifications.................................................................. 3
Typical C o n nect i o n D iagram ................................................... 18
AD7939—Specifications.................................................................. 5
Timing Specifications....................................................................... 7
Absolute Maximum Ratings............................................................ 8
ESD Caution.................................................................................. 8
Pin Configuration and Function Description .............................. 9
Te r m in o l o g y .................................................................................... 11
Typical Performance Characteristics........................................... 13
On-Chip Registers.......................................................................... 15
Control Register.......................................................................... 15
Sequencer Operation .................................................................16
Shadow Register.......................................................................... 16
Circuit Information........................................................................ 17
Converter Operation.................................................................. 17
ADC Transfer Function............................................................. 17
Analog Input Structure.............................................................. 18
Analog Inputs.............................................................................. 19
Analog Input Selection.............................................................. 21
Reference Section ....................................................................... 22
Parallel Interface ......................................................................... 24
Power Modes of Operation ....................................................... 27
Power vs. Throughput Rate ....................................................... 28
Microprocessor Interfacing....................................................... 28
Application Hints ........................................................................... 30
Grounding and Layout .............................................................. 30
PCB Design Guidelines for Chip Scale Package .................... 30
Evaluating the AD7938/AD7939 Performance...................... 30
Outline Dimensions....................................................................... 31
Ordering Guide .......................................................................... 32
REVISION HISTORY
10/04—Revision 0: Initial Version
Rev. 0 | Page 2 of 32
AD7938/AD7939

AD7938—SPECIFICATIONS

VDD = V T
MAX
Table 1.
Parameter B Version
DYNAMIC PERFORMANCE FIN = 50 kHz sine wave
Signal-to-Noise + Distortion (SINAD) 68 dB min Single-ended mode Signal-to-Noise Ratio (SNR)2 71 dB min Differential mode 69 dB min Single-ended mode Total Harmonic Distortion (THD)2 −73 dB max −85 dB typ, differential mode
−70 dB max −80 dB typ, single-ended mode Peak Harmonic or Spurious Noise (SFDR)2 −73 dB max −82 dB typ Intermodulation Distortion (IMD)2 fa = 30 kHz, fb = 50 kHz
Channel-to-Channel Isolation −85 dB typ FIN = 50 kHz, F Aperture Delay2 5 ns typ Aperture Jitter2 72 ps typ
Full Power Bandwidth2 50 MHz typ @ 3 dB 10 MHz typ @ 0.1 dB DC ACCURACY
Resolution 12 Bits
Integral Nonlinearity2 ±1 LSB max Differential mode
±1.5 LSB max Single-ended mode
Differential Nonlinearity2
Single-Ended and Pseudo-Differential Input Straight binary output coding
Fully Differential Input Twos complement output coding
ANALOG INPUT
Single-Ended Input Range 0 to V
Pseudo-Differential Input Range: V
Fully Differential Input Range: V
DC Leakage Current
Input Capacitance 45 pF typ When in track
10 pF typ When in hold
= 2.7 V to 5.25 V, internal/external V
DRIVE
= 2.5 V, unless otherwise noted, F
REF
= 25.5 MHz, F
CLKIN
= 1.5 MSPS; TA = T
SAMPLE
, unless otherwise noted.
1
2
70 dB min Differential mode
Unit Test Conditions/Comments
Second-Order Terms −86 dB typ Third-Order Terms −90 dB typ
= 300 kHz
NOISE
Differential Mode ±0.95 LSB max Guaranteed no missed codes to 12 bits Single-Ended Mode −0.95/+1.5 LSB max Guaranteed no missed codes to 12 bits
Offset Error2 ±6 LSB max Offset Error Match2 ±1 LSB max Gain Error2 ±3 LSB max Gain Error Match2 ±1 LSB max
Positive Gain Error3 ±3 LSB max Positive Gain Error Match2 ±1 LSB max Zero-Code Error2 ±6 LSB max Zero-Code Error Match2 ±1 LSB max Negative Gain Error2 ±3 LSB max Negative Gain Error Match2 ±1 LSB max
or 0 to 2 × V
REF
0 to V
IN+
V
IN−
or 2 × V
REF
REF
−0.3 to +0.7 V typ VDD = 3 V
V RANGE bit = 0, or RANGE bit =1, respectively
REF
V RANGE bit = 0, or RANGE bit =1, respectively
−0.3 to +1.8 V typ VDD = 5 V and V
IN+
V
and V
4
IN+
IN−
IN−
VCM ± V VCM ± V
/2 V VCM = common-mode voltage3 = V
REF
REF
V VCM = V
±1 µA max
REF
, V
IN+
or V
must remain within GND/V
IN−
REF
/2
MIN
to
DD
Rev. 0 | Page 3 of 32
AD7938/AD7939
Parameter B Version
1
Unit Test Conditions/Comments
REFERENCE INPUT/OUTPUT
V
Input Voltage
REF
5
2.5 V ±1% for specified performance DC Leakage Current ±1 µA max V
Input Impedance 10 kΩ typ
REF
V
Output Voltage 2.5 V ±0.2% max @ 25°C
REFOUT
V
Temperature Coefficient 25 ppm/°C max 5 ppm/°C typ
REFOUT
V
Noise 10 µV typ 0.1 Hz to 10 Hz bandwidth
REF
130 µV typ 0.1 Hz to 1 MHz bandwidth V
Output Impedance 10 Ω typ
REF
V
Input Capacitance 15 pF typ When in track
REF
25 pF typ When in hold
LOGIC INPUTS
Input High Voltage, V Input Low Voltage, V
INH
INL
2.4 V min
0.8 V max Input Current, IIN ±5 µA max Typically 10 nA, VIN = 0 V or V Input Capacitance, C
4
IN
10 pF max
LOGIC OUTPUTS
Output High Voltage, V
OH
Output Low Voltage, VOL 0.4 V max I
2.4 V min I
SOURCE
= 200 µA
SINK
= 200 µA
Floating-State Leakage Current ±3 µA max Floating-State Output Capacitance4 10 pF max Output Coding CODING bit = 0
Straight (Natural) Binary
Twos Complement
CODING bit = 1
CONVERSION RATE
Conversion Time t2 + 13 t
CLK
ns Track-and-Hold Acquisition Time 125 ns max Full-scale step input Throughput Rate 1.5 MSPS max
POWER REQUIREMENTS
VDD 2.7/5.25 V min/max V
2.7/5.25 V min/max
DRIVE
6
I
DD
Digital I/PS = 0 V or V
DRIVE
Normal Mode (Static) 0.8 mA typ VDD = 2.7 V to 5.25 V, SCLK on or off Normal Mode (Operational) 2.7 mA max VDD = 4.75 V to 5.25 V
2.0 mA max VDD = 2.7 V to 3.6 V
Autostandby Mode 0.3 mA typ F
= 100 kSPS, VDD = 5 V
SAMPLE
160 µA typ (Static) Full/Autoshutdown Mode (Static) 2 µA max SCLK on or off
Power Dissipation
Normal Mode (Operational) 13.5 mW max VDD = 5 V 6 mW max VDD = 3 V Autostandby Mode (Static) 800 µW typ VDD = 5 V 480 µW typ VDD = 3 V Full/Autoshutdown Mode (Static) 10/6 µW max VDD = 5 V/3 V
1
Temperature ranges as follows: B Versions: −40°C to +85°C.
2
See the Terminology section.
3
For full common-mode range, see Fi and . gure 25 Figure 26
4
Sample tested during initial release to ensure compliance.
5
This device is operational with an external reference in the range 0.1 V to VDD. See the Reference Section for more information.
6
Measured with a midscale dc analog input.
DRIVE
Rev. 0 | Page 4 of 32
AD7938/AD7939

AD7939—SPECIFICATIONS

VDD = V T
MAX
Table 2.
Parameter B Version
DYNAMIC PERFORMANCE FIN = 50 kHz sine wave
Signal-to-Noise + Distortion (SINAD) 60 dB min Single-ended mode Total Harmonic Distortion (THD)2 −70 dB max Peak Harmonic or Spurious Noise (SFDR)2 −72 dB max Intermodulation Distortion (IMD)2 fa = 30 kHz, fb = 50 kHz
Channel-to-Channel Isolation −75 dB typ FIN = 50 kHz, F Aperture Delay2 5 ns typ Aperture Jitter2 72 ps typ
Full Power Bandwidth2 50 MHz typ @ 3 dB 10 MHz typ @ 0.1 dB DC ACCURACY
Resolution 10 Bits
Integral Nonlinearity2 ±0.5 LSB max
Differential Nonlinearity2 ±0.5 LSB max Guaranteed no missed codes to 10 bits
Single-Ended and Pseudo-Differential Input Straight binary output coding
Fully Differential Input Twos complement output coding
ANALOG INPUT
Single-Ended Input Range 0 to V
Pseudo-Differential Input Range: V
Fully Differential Input Range: V
DC Leakage Current
Input Capacitance 45 pF typ When in track
10 pF typ When in hold REFERENCE INPUT/OUTPUT
V
REF
DC Leakage Current4 ±1 µA max
V
REFOUT
V
REFOUT
V
REF
130 µV typ 0.1 Hz to 1 MHz bandwidth
V
REF
= 2.7 V to 5.25 V, internal/external V
DRIVE
= 2.5V, unless otherwise noted, F
REF
= 25.5 MHz, F
CLKIN
= 1.5 MSPS; TA = T
SAMPLE
, unless otherwise noted.
1
2
61 dB min Differential mode
Unit Test Conditions/Comments
Second-Order Terms −86 dB typ Third-Order Terms −90 dB typ
= 300 kHz
NOISE
Offset Error2 ±2 LSB max Offset Error Match2 ±0.5 LSB max Gain Error2 ±1.5 LSB max Gain Error Match2 ±0.5 LSB max
Positive Gain Error2 ±1.5 LSB max Positive Gain Error Match2 ±0.5 LSB max Zero-Code Error2 ±2 LSB max Zero-Code Error Match2 ±0.5 LSB max Negative Gain Error2 ±1.5 LSB max Negative Gain Error Match2 ±0.5 LSB max
or 0 to 2 × V
REF
0 to V
IN+
V
IN−
or 2 × V
REF
REF
−0.3 to +0.7 V typ VDD = 3 V
V RANGE bit = 0, or RANGE bit =1, respectively
REF
V RANGE bit = 0, or RANGE bit =1, respectively
−0.3 to +1.8 V typ VDD = 5 V
Input Voltage
and V
IN+
V
and V
4
5
IN+
IN−
IN−
VCM ± V VCM ± V
/2 V VCM = common-mode voltage3 = V
REF
REF
V VCM = V
REF
, V
or V
IN+
±1 µA max
2.5 V ±1% for specified performance
must remain within GND/V
IN−
Output Voltage 2.5 V ±0.2% max @ 25°C Temperature Coefficient 40 ppm/°C typ
Noise 10 µV typ 0.1 Hz to 10 Hz bandwidth
Output Impedance 10 Ω typ
REF
/2
MIN
to
DD
Rev. 0 | Page 5 of 32
AD7938/AD7939
Parameter B Version
V
Input Capacitance 15 pF typ When in track
REF
1
Unit Test Conditions/Comments
25 pF typ When in hold
LOGIC INPUTS
Input High Voltage, V Input Low Voltage, V
INH
INL
2.4 V min
0.8 V max Input Current, IIN ±5 µA max Typically 10 nA, VIN = 0 V or V Input Capacitance, C
4
IN
10 pF max
LOGIC OUTPUTS
Output High Voltage, V
OH
Output Low Voltage, VOL 0.4 V max I
2.4 V min I
= 200 µA
SOURCE
= 200 µA
SINK
Floating-State Leakage Current ±3 µA max Floating-State Output Capacitance4 10 pF max Output Coding CODING bit = 0
Straight (Natural) Binary
Twos Complement
CODING bit =1
CONVERSION RATE
Conversion Time t2 + 13 t
ns
CLK
Track-and-Hold Acquisition Time 125 ns max Full-scale step input Throughput Rate 1.5 MSPS max
POWER REQUIREMENTS
VDD 2.7/5.25 V min/max V
2.7/5.25 V min/max
DRIVE
6
I
DD
Digital I/PS = 0 V or V
DRIVE
Normal Mode (Static) 0.8 mA typ VDD = 2.7 V to 5.25 V, SCLK on or off Normal Mode (Operational) 2.7 mA max VDD = 4.75 V to 5.25 V
2.0 mA max VDD = 2.7 V to 3.6 V Autostandby Mode 0.3 mA typ F
= 100 kSPS, VDD = 5 V
SAMPLE
160 µA typ (Static) Full/Autoshutdown Mode (Static) 2 µA max SCLK on or off
Power Dissipation
Normal Mode (Operational) 13.5 mW max VDD = 5 V 6 mW max VDD = 3 V Autostandby Mode (Static) 800 µW typ VDD = 5 V 480 µW typ VDD = 3 V Full/Autoshutdown Mode (Static) 10/6 µW max VDD = 5 V/3 V
1
Temperature ranges as follows: B Versions: −40°C to +85°C.
2
See the Terminology section.
3
For full common-mode range see Fig and . ure 25 Figure 26
4
Sample tested during initial release to ensure compliance.
5
This device is operational with an external reference in the range 0.1 V to VDD. See the Reference Section for more details.
6
Measured with a midscale dc analog input.
DRIVE
Rev. 0 | Page 6 of 32
AD7938/AD7939

TIMING SPECIFICATIONS

VDD = V T
MAX
Table 3.
Limit at T Parameter AD7938 AD7939 Unit Description
f
CLKIN
25.5 25.5 MHz max t
QUIET
t
1
t
2
t
3
t
4
t
5
t
6
t
7
t
8
t
9
t
10
t
11
t
12
2
t
13
3
t
14
50 50 ns max t
15
t
16
t
17
t
18
t
19
t
20
t
21
t
22
1
Sample tested during initial release to ensure compliance. All input signals are specified with tr = tf = 5 ns (10% to 90% of VDD) and timed from a voltage level of 1.6 V. All timing specifications given above are with a 25 pF load capacitance (see , Figure 36, Figure 37, and ).
2
The time required for the output to cross 0.4 V or 2.4 V.
3
t14 is derived from the measured time taken by the data outputs to change 0.5 V. The measured number is then extrapolated back to remove the effects of charging or
discharging the 25 pF capacitor. This means that the time, t14, quoted in the timing characteristics is the true bus relinquish time of the part and is independent of the bus loading.
= 2.7 V to 5.25 V, internal/external V
DRIVE
, unless otherwise noted.
, T
MIN
50 50 kHz min
30 30 ns min
10 10 ns min 15 15 ns min 50 50 ns min CLKIN Falling Edge to BUSY Rising Edge.
0 0 ns min 0 0 ns min 10 10 ns min 10 10 ns min 10 10 ns min 10 10 ns min New Data Valid before Falling Edge of BUSY. 0 0 ns min 0 0 ns min 30 30 ns min 30 30 ns max 3 3 ns min
0 0 ns min 0 0 ns min 10 10 ns min Minimum Time between Reads/Writes. 0 0 ns min 10 10 ns min 40 40 ns max CLKIN Falling Edge to BUSY Falling Edge.
15.7 15.7 ns min CLKIN Low Pulse Width.
7.8 7.8 ns min CLKIN High Pulse Width.
1
MAX
= 2.5 V, unless otherwise noted; F
REF
= 25.5 MHz, F
CLKIN
= 1.5 MSPS; TA = T
SAMPLE
Minimum time between end of read and start of next conversion, i.e., time from when the data bus goes into three-state until the next falling edge of
CONVST. CONVST Pulse Width. CONVST Falling Edge to CLKIN Falling Edge Setup Time.
CS to WR Setup Time. CS to WR Hold Time. WR Pulse Width. Data Setup Time before Data Hold after
WR.
WR.
CS to RD Setup Time. CS to RD Hold Time. RD Pulse Width. Data Access Time after Bus Relinquish Time after Bus Relinquish Time after HBEN to HBEN to
HBEN to HBEN to
RD Setup Time. RD Hold Time.
WR Setup Time. WR Hold Time.
Figure 35 Figure 38
RD.
RD. RD.
MIN
to
Rev. 0 | Page 7 of 32
AD7938/AD7939

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.
Table 4.
Parameter Rating
VDD to AGND/DGND −0.3 V to +7 V V
to AGND/DGND −0.3 V to VDD +0.3 V
DRIVE
Analog Input Voltage to AGND −0.3 V to VDD + 0.3 V Digital Input Voltage to DGND −0.3 V to +7 V V
to V
DRIVE
DD
Digital Output Voltage to DGND −0.3 V to V V
to AGND −0.3 V to VDD + 0.3 V
REFIN
−0.3 V to VDD + 0.3 V + 0.3 V
DRIVE
AGND to DGND −0.3 V to + 0.3 V Input Current to Any
Pin Except Supplies
1
±10 mA
Operating Temperature Range
Commercial (B Version) −40°C to +85°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C θJA Thermal Impedance 108.2°C/W (LFCSP) 121°C/W (TQFP) θJC Thermal Impedance 32.71°C/W (LFCSP) 45°C/W (TQFP) Lead Temperature, Soldering
Reflow Temperature
255°C
(10 sec to 30 sec)
ESD 1.5 kV
1
Transient currents of up to 100 mA do not cause SCR latch-up.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. 0 | Page 8 of 32
AD7938/AD7939

PIN CONFIGURATION AND FUNCTION DESCRIPTION

7
6
5
4
3
2
IN
IN
IN
V
V
V
27
26
25
VIN1
24
VIN0
23
V
22
REFIN/VREFOUT
21
AGND
20
CS
19
RD WR
18
17
CONVST
14
15
16
BUSY
CLKIN
03715-0-006
CS, RD, and WR. The logic high/low
input. When reading from the AD7939, the two LSBs
DRIVE
CS, RD, and WR.
input.
DRIVE
th
rising edge of SCLK, see Figure 35.
. The frequency of the master clock input therefore determines the
2
CONVST is used to power-up the
RD read while CS is low.
Table 5. Pin Function Description
Pin No Mnemonic Function
1 to 8 DB0 to DB7
Data Bits 0 to 7. Three-state parallel digital I/O pins that provide the conversion result and also allow the control and shadow registers to be programmed. These pins are controlled by voltage levels for these pins are determined by the V (DB0 and DB1) are always 0 and the LSB of the conversion result is available on DB2.
9 V
DRIVE
Logic Power Supply Input. The voltage supplied at this pin determines at what voltage the parallel interface of the AD7938/AD7939 operates. This pin should be decoupled to DGND. The voltage at this pin may be different to that at V
10 DGND
Digital Ground. This is the ground reference point for all digital circuitry on the AD7938/AD7939. This pin should connect to the DGND plane of a system. The DGND and AGND voltages should ideally be at the same potential and must not be more than 0.3 V apart, even on a transient basis.
11 DB8/HBEN
Data Bit 8/High Byte Enable. When W/
CS, RD, and WR. When W/B is low, this pin acts as the high byte enable pin. When HBEN is low, the low byte
by of data being written to or read from the AD7938/AD7939 is on DB0 to DB7. When HBEN is high, the top four
bits of the data being written to or read from the AD7938/AD7939 are on DB0 to DB3. When reading from the device, DB4 to DB6 of the high byte contains the ID of the channel to which the conversion result corresponds (see the channel address bits in Table 9). When writing to the device, DB4 to DB7 of the high byte must be all 0s. Note that when reading from the AD7939, the two LSBs of the low byte are 0s, and the remaining 6 bits, conversion data.
12 to 14 DB9 to DB11
Data Bits 9 to 11. Three-state parallel digital I/O pins that provide the conversion result and also allow the control and shadow registers to be programmed in word mode. These pins are controlled by The logic high/low voltage levels for these pins are determined by the V
15 BUSY
Busy Output. Logic output indicating the status of the conversion. The BUSY output goes high following the falling edge of the result is available in the output register, the BUSY output goes low. The track-and-hold returns to track mode just prior to the falling edge of BUSY on the 13
16 CLKIN
Master Clock Input. The clock source for the conversion process is applied to this pin. Conversion time for the AD7938/AD7939 takes 13 clock cycles + t conversion time and achievable throughput rate. The CLKIN signal may be a continuous or burst clock.
17
CONVST Conversion Start Input. A falling edge on CONVST is used to initiate a conversion. The track-and-hold goes from track
to hold mode on the falling edge of down, when operating in autoshutdown or autostandby modes, a rising edge on device.
18 19
WR Write Input. Active low logic input used in conjunction with CS to write data to the internal registers. RD Read Input. Active low logic input used in conjunction with CS to access the conversion result. The conversion
result is placed on the data bus following the falling edge of
DD
IN
IN
IN
V
V
V
30
29
28
TOP VIEW
(Not to Scale)
11
12
DB9
DB1013DB11
DB8/HBEN
DB0 DB1 DB2 DB3 DB4 DB5 DB6 DB7
W/B32V
31
PIN 1
1
IDENTIFIER
2
3
4
5
6
7
8
AD7938/AD7939
9
10
DRIVE
DGND
V
Figure 2. Pin Configuration
but should never exceed VDD by more than 0.3 V.
DD
B is high, this pin acts as Data Bit 8, a three-state I/O pin that is controlled
CONVST and stays high for the duration of the conversion. Once the conversion is complete and
CONVST and the conversion process is initiated at this point. Following power-
Rev. 0 | Page 9 of 32
AD7938/AD7939
Pin No Mnemonic Function
20
21 AGND
22 V
23 to 30 VIN0 to VIN7
31 VDD
32
CS Chip Select. Active low logic input used in conjunction with RD and WR to read conversion data or to write data
to the internal registers. Analog Ground. This is the ground reference point for all analog circuitry on the AD7938/AD7939. All analog
input signals and any external reference signal should be referred to this AGND voltage. The AGND and DGND voltages should ideally be at the same potential and must not be more than 0.3 V apart, even on a transient basis.
REFIN/VREFOUT
Reference Input/Output. This pin is connected to the internal reference and is the reference source for the ADC. The nominal internal reference voltage is 2.5 V and this appears at this pin. This pin can be overdriven by an external reference. The input voltage range for the external reference is 0.1 V to V taken to ensure that the analog input range does not exceed V
Analog Input 0 to Analog Input 7. Eight analog input channels that are multiplexed into the on-chip track-and­hold. The analog inputs can be programmed to be eight single-ended inputs, four fully differential pairs, four pseudo-differential pairs, or seven pseudo-differential inputs by setting the MODE bits in the control register appropriately (see Table 9). The analog input channel to be converted can either be selected by writing to the address bits (ADD2 to ADD0) in the control register prior to the conversion or the on-chip sequencer can be used. The SEQ and SHDW bits in conjunction with the address bits in the control register allow the shadow register to be programmed. The input range for all input channels can either be 0 V to V the coding can be binary or twos complement, depending on the states of the RANGE and CODING bits in the control register. Any unused input channels should be connected to AGND to avoid noise pickup.
Power Supply Input. The V to AGND with a 0.1 µF capacitor and a 10 µF tantalum capacitor.
B Word/Byte Input. When this input is logic high, data is transferred to and from the AD7938/AD7939 in 12-bit/10-
W/
bit words on Pins DB0/DB2 to DB11. When this pin is logic low, byte transfer mode is enabled. Data and the channel ID are transferred on Pins DB0 to DB7, and Pin DB8/HBEN assumes its HBEN functionality. Unused data lines when operating in byte transfer mode should be tied off to DGND.
; however, care must be
+ 0.3 V. See the Reference Section.
DD
range for the AD7938/AD7939 is 2.7 V to 5.25 V. The supply should be decoupled
DD
DD
or 0 V to 2 × V
REF
REF
, and
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