New standard in single chip solutions
Interfaces to single or differential grounded sensors
Resolution down to 20 aF (that is, up to 19.5-bit ENOB)
Accuracy: 10 fF
Linearity: 0.01%
Common-mode (not changing) capacitance up to 17 pF
Full-scale (changing) capacitance range ±8 pF
Update rate: 5 Hz to 45 Hz
Simultaneous 50 Hz and 60 Hz rejection at 8.1 Hz update
Active shield for shielding sensor connection
Temperature sensor on-chip
Resolution: 0.1°C, accuracy: ±2°C
Voltage input channel
Internal clock oscillator
2-wire serial interface (I
Power
2.7 V to 5.25 V single-supply operation
0.7 mA current consumption
Operating temperature: −40°C to +125°C
16-lead TSSOP package
The AD7747 is a high-resolution, Σ- capacitance-to-digital
converter (CDC). The capacitance to be measured is connected
directly to the device inputs. The architecture features inherent
high resolution (24-bit no missing codes, up to 19.5-bit effective
resolution), high linearity (±0.01%), and high accuracy (±10 fF
factory calibrated). The AD7747 capacitance input range is
±8 pF (changing), and it can accept up to 17 pF common-mode
capacitance (not changing), which can be balanced by a programmable on-chip digital-to-capacitance converter (CAPDAC).
The AD7747 is designed for single-ended or differential
capacitive sensors with one plate connected to ground. For
floating (not grounded) capacitive sensors, the AD7745 or
AD7746 are recommended.
The part has an on-chip temperature sensor with a resolution of
0.1°C and accuracy of ±2°C. The on-chip voltage reference and
the on-chip clock generator eliminate the need for any external
components in capacitive sensor applications. The part has a
standard voltage input that, together with the differential reference
input, allows easy interface to an external temperature sensor,
such as an RTD, thermistor, or diode.
2
The AD7747 has a 2-wire, I
part can operate with a single power supply of 2.7 V to 5.25 V.
It is specified over the automotive temperature range of
−40°C to +125°C and is housed in a 16-lead TSSOP package.
C-compatible serial interface. The
FUNCTIONAL BLOCK DIAGRAM
DD
TEMP
SENSOR
VIN(+)
VIN(–)
CIN1(+)
CIN1(–)
SHLD
EXCITATION
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
VDD = 2.7 V to 3.6 V or 4.75 V to 5.25 V; GND = 0 V; EXC = ±V
Table 1.
Parameter Min Typ Max Unit Test Conditions/Comments
CAPACITIVE INPUT
Conversion Input Range ±8.192 pF1 Factory calibrated
Integral Nonlinearity (INL)2 ±0.01 % of FSR1
No Missing Codes2 24 Bit Conversion time ≥ 124 ms
Resolution, p-p 16.5 Bit Conversion time 124 ms, see Table 5
Resolution Effective 19.1 Bit Conversion time 124 ms, see Table 5
Output Noise, rms 11.0
System Offset Calibration Range5 ±1 pF
Offset Deviation over Temperature2 0.4 fF See Figure 6
Gain Error6 0.02 0.11 % of FS1 25°C, VDD = 5 V
Gain Drift vs. Temperature2 −23 −26 −29 ppm of FS/°C
Power Supply Rejection2 0.5 4 fF/V
Normal Mode Rejection5 72 dB 50 Hz ± 1%, conversion time 124 ms
60 dB 60 Hz ± 1%, conversion time 124 ms
CAPDAC
Full Range 17 21 pF 6-bit CAPDAC
Differential Nonlinearity (DNL) 0.3 LSB See Figure 16
Drift vs. Temperature2 26 ppm of FS/°C
EXCITATION
Frequency 16 kHz
AC Voltage Across Capacitance ±VDD × 3/8 V To be configured via digital interface
Average DC Voltage Across Capacitance VDD/2 V
TEMPERATURE SENSOR7 V
Resolution 0.1 °C
Error2 ±0.5 ±2 °C Internal temperature sensor
±2 °C External sensing diode8
VOLTAGE INPUT7 V
Differential VIN Voltage Range ±V
Absolute VIN Voltage2 GND − 0.03 VDD + 0.03 V
Integral Nonlinearity (INL) ±3 ±15 ppm of FS
No Missing Codes2 24 Bit Conversion time = 122.1 ms
Resolution, p-p 16 Bits
Output Noise 3 μV rms
Offset Error ±3 μV
Offset Drift vs. Temperature 15 nV/°C
Full-Scale Error
2, 9
0.025 0.1 % of FS
Full-Scale Drift vs. Temperature 5 ppm of FS/°C Internal reference
0.5 ppm of FS/°C External reference
Average VIN Input Current 300 nA/V
Analog VIN Input Current Drift ±50 pA/V/°C
Power Supply Rejection 80 dB Internal reference, VIN = V
90 dB External reference, VIN = V
× 3/8; −40°C to +125°C, unless otherwise noted.
DD
aF/√Hz
Conversion time 124 ms, see Table 5
After system offset calibration,
excluding effect of noise
REF
REF
V
REF
Conversion time = 62 ms,
see Table 6 and Table 7
Conversion time = 62 ms,
see Table 6 and Table 7
internal
internal or V
= 2.5 V
REF
4
/2
REF
/2
REF
Rev. 0 | Page 3 of 28
AD7747
Parameter Min Typ Max Unit Test Conditions/Comments
Normal Mode Rejection5 75 dB 50 Hz ± 1%, conversion time = 122.1 ms
50 dB 60 Hz ± 1%, conversion time = 122.1 ms
Common-Mode Rejection2 95 dB VIN = 1 V
INTERNAL VOLTAGE REFERENCE
Voltage 1.169 1.17 1.171 V TA = 25°C
Drift vs. Temperature 5 ppm/°C
EXTERNAL VOLTAGE REFERENCE INPUT
Differential REFIN Voltage2 0.1 2.5 VDD V
Absolute REFIN Voltage2 GND − 0.03 VDD + 0.03 V
Average REFIN Input Current 400 nA/V
Average REFIN Input Current Drift ±50 pA/V/°C
Common-Mode Rejection 80 dB
SERIAL INTERFACE LOGIC INPUTS (SCL, SDA)
VIH Input High Voltage 2.1 V
VIL Input Low Voltage 0.8 V
Hysteresis 150 mV
Input Leakage Current (SCL) ±0.1 ±1 μA
OPEN-DRAIN OUTPUT (SDA)
VOL Output Low Voltage 0.4 V I
IOH Output High Leakage Current 0.1 1 μA V
LOGIC OUTPUT (
RDY
)
VOL Output Low Voltage 0.4 V I
VOH Output High Voltage 4.0 V I
VOL Output Low Voltage 0.4 V I
VOH Output High Voltage VDD − 0.6 V I
POWER REQUIREMENTS
VDD-to-GND Voltage 4.75 5.25 V VDD = 5 V, nominal
2.7 3.6 V VDD = 3.3 V, nominal
IDD Current 850 μA Digital inputs equal to VDD or GND
750 μA VDD = 5 V
700 μA VDD = 3.3 V
IDD Current Power-Down Mode 0.5 2 μA Digital inputs equal to VDD or GND
1
Capacitance units: 1 pF = 10
2
Specification is not production tested, but is supported by characterization data at initial product release.
3
Factory calibrated. The absolute error includes factory gain calibration error, integral nonlinearity error, and offset error after system offset calibration, all at 25°C.
At different temperatures, compensation for gain drift over temperature is required.
4
The capacitive input offset can be eliminated using a system offset calibration. The accuracy of the system offset calibration is limited by the offset calibration register
LSB size (32 aF) or by converter + system p-p noise during the system capacitive offset calibration, whichever is greater. To minimize the effect of the converter +
system noise, longer conversion times should be used for system capacitive offset calibration. The system capacitance offset calibration range is ±1 pF; the larger
offset can be removed using CAPDACs.
5
Specification is not production tested, but guaranteed by design.
6
The gain error is factory calibrated at 25°C. At different temperatures, compensation for gain drift over temperature is required.
7
The VTCHOP bit in the VT SETUP register must be set to 1 for the specified temperature sensor and voltage input performance.
8
Using an external temperature sensing diode 2N3906, with nonideality factor nf = 1.008, connected as in Figure 37, with total serial resistance <100 Ω.
9
Full-scale error applies to both positive and negative full scale.
−12
F; 1 fF = 10
−15
F; 1 aF = 10
−18
F. Full scale (FS) = 8.192 pF; full-scale range (FSR) = ±8.192 pF.
= −6.0 mA
SINK
= VDD
OUT
= 1.6 mA, VDD = 5 V
SINK
= 200 μA, VDD = 5 V
SOURCE
= 100 μA, VDD = 3 V
SINK
= 100 μA, VDD = 3 V
SOURCE
Rev. 0 | Page 4 of 28
AD7747
TIMING SPECIFICATIONS
VDD = 2.7 V to 3.6 V, or 4.75 V to 5.25 V; GND = 0 V; Input Logic 0 = 0 V; Input Logic 1 = VDD; −40°C to +125°C, unless otherwise noted.
Table 2.
Parameter Min Typ Max Unit Test Conditions/Comments
SERIAL INTERFACE
SCL Frequency 0 400 kHz
SCL High Pulse Width, t
SCL Low Pulse Width, t
SCL, SDA Rise Time, tR 0.3 μs
SCL, SDA Fall Time, t
Hold Time (Start Condition), t
Setup Time (Start Condition), t
Data Setup Time, t
Setup Time (Stop Condition), t
Data Hold Time, t
Bus-Free Time (Between Stop and Start Condition, t
1
Sample tested during initial release to ensure compliance.
2
All input signals are specified with input rise/fall times = 3 ns, measured between the 10% and 90% points. Timing reference points at 50% for inputs and outputs.
Output load = 10 pF.
1, 2
See Figure 2
0.6 μs
HIGH
1.3 μs
LOW
F
0.6 μs After this period, the first clock is generated
HD;STA
0.6 μs Relevant for repeated start condition
SU;STA
0.1 μs
SU;DAT
0.6 μs
SU;STO
(Master) 0 μs
HD;DAT
t
R
t
LOW
0.3 μs
) 1.3 μs
BUF
t
F
t
HD;STA
SCL
t
SDA
t
t
BUF
PS
HD;STA
t
HD;DAT
HIGH
t
SU;DAT
t
SU;STA
S
t
SU;STO
P
05469-002
Figure 2. Serial Interface Timing Diagram
Rev. 0 | Page 5 of 28
AD7747
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
Positive Supply Voltage VDD to GND −0.3 V to +6.5 V
Voltage on any Input or Output Pin to
GND
ESD Rating (ESD Association Human Body
Model, S5.1)
Operating Temperature Range −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
TSSOP Package θ
(Thermal Impedance-to-Air)
TSSOP Package θJC
(Thermal Impedance-to-Case)
Peak Reflow Soldering Temperature
Pb Free (20 sec to 40 sec) 260°C
JA
−0.3 V to V
2000 V
128°C/W
14°C/W
+ 0.3 V
DD
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. 0 | Page 6 of 28
AD7747
V
V
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
SCL
1
2
RDY
3
SHLD
TST
REFIN(+)
REFIN(–)
CIN1(–)
CIN1(+)
AD7747
4
TOP VIEW
5
(Not to Scale)
6
7
8
NC = NO CONNECT
Figure 3. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1 SCL
Serial Interface Clock Input. Connects to the master clock line. Requires pull-up resistor if not already provided
in the system.
2
Logic Output. A falling edge on this output indicates that a conversion on enabled channel(s) has been finished
RDY
and the new data is available. Alternatively, the status register can be read via the 2-wire serial interface and the
relevant bit(s) decoded to query the finished conversion. If not used, this pin should be left as an open circuit.
3 SHLD
Capacitive Input Active AC Shielding. To eliminate the CIN parasitic capacitance to ground, the SHLD signal
can be used for shielding the connection between the sensor and CIN. If not used, this pin should be left as an
open circuit.
4 TST This pin must be left as an open circuit for proper operation.
5, 6
REFIN(+),
REFIN(−)
Differential Voltage Reference Input for the Voltage Channel (ADC). Alternatively, the on-chip internal reference
can be used for the voltage channel. These reference input pins are not used for conversion on capacitive
channel(s) (CDC). If not used, these pins can be left as an open circuit or connected to GND.
7 CIN1(−)
CDC Negative Capacitive Input. The measured capacitance is connected between the CIN1(−) pin and GND. If
not used, this pin should be left as an open circuit.
8 CIN1(+)
CDC Positive Capacitive Input. The measured capacitance is connected between the CIN1(+) pin and GND. If not
used, this pin should be left as an open circuit.
9, 10 NC Not Connected. These pins should be left as an open circuit.
11, 12 VIN(+), VIN(−)
Differential Voltage Input for the Voltage Channel (ADC). These pins are also used to connect an external
temperature sensing diode. If not used, these pins can be left as an open circuit or connected to GND.
13 GND Ground Pin.
14 VDD
Power Supply Voltage. This pin should be decoupled to GND, using a low impedance capacitor, for example in
combination with a 10 μF tantalum and a 0.1 μF multilayer ceramic.
15 NC Not Connected. This pin should be left as an open circuit.
16 SDA
Serial Interface Bidirectional Data. Connects to the master data line. Requires a pull-up resistor if not provided
elsewhere in the system.
SDA
16
15
NC
14
VDD
13
GND
12
IN(–)
11
IN(+)
10
NC
9
NC
05469-003
Rev. 0 | Page 7 of 28
AD7747
TYPICAL PERFORMANCE CHARACTERISTICS
80
10
60
40
20
0
INL (ppm)
–20
–40
–60
–80
–8 –7 –6 –5 –4 –3–1–28
INPUT CAPACIT ANCE (pF)
01234567
Figure 4. Capacitance Input Integral Nonlinearity;
= 5 V, CAPDAC = 0x3F
V
DD
2000
1000
0
–1000
GAIN ERROR (ppm)
–2000
–3000
–50150
–250255075100125
TEMPERATURE (ºC)
GAIN TC ≈ –28ppm/ºC
Figure 5. Capacitance Input Gain Drift vs. Temperature;
V
= 5 V, CIN(+) to GND = 8 pF
DD
.20
.15
.10
.050
–0.05
–0.10
–0.15
OFFSET ERROR (fF)
–0.20
–0.25
–0.30
–50150
–250255075100125
TEMPERATURE (ºC)
0
–10
–20
CAP ERROR (fF)
–30
–40
05469-004
–50
2.7V
3.0V
3.3V
5.0V
0600500
50 100 150 200 250 300 350 400 450550
CAPACITANCE SHLD T O GND (pF )
05469-007
Figure 7. Capacitance Input Error vs. Capacitance Between SHLD and GND;
CIN(+) to GND = 8 pF, V
10
0
–10
–20
CAP ERROR (fF)
–30
–40
05469-005
–50
2.7V
3.0V
3.3V
5.0V
0600500
50 100 150 200 250 300 350 400 450550
CAPACITANCE SHLD T O GND (pF )
= 2.7 V, 3 V, 3.3 V, and 5 V
DD
05469-008
Figure 8. Capacitance Input Error vs. Capacitance Between SHLD and GND;
CIN(+) to GND = 25 pF, V
10
0
–10
–20
CAP ERROR (fF)
–30
–40
05469-006
–50
2.7V
3.0V
3.3V
5.0V
0600500
50 100 150 200 250 300 350 400 450550
CAPACITANCE CIN TO SHLD (pF )
= 2.7 V, 3 V, 3.3 V, and 5 V
DD
05469-009
Figure 6. Capacitance Input Offset Drift vs. Temperature;
= 5 V, CIN(+) Open
V
DD
Rev. 0 | Page 8 of 28
Figure 9. Capacitance Input Error vs. Capacitance Between CIN(+) and SHLD;
CIN(+) to GND = 8 pF, V
= 2.7 V, 3 V, 3.3 V, and 5V
DD
AD7747
150
100
50
0
CAP ERROR (fF)
–50
–100
–150
01k
10100
PARALLEL RESISTANCE (MΩ)
05469-010
Figure 10. Capacitance Input Error vs. Parallel Resistance;
CIN(+) to GND = 8 pF, V
0
–100
–200
–300
–400
–500
–600
CAP ERROR (fF)
–700
–800
–900
–1000
0200
2550751 00125150175
CIN TO SHLD RE SISTANCE (kΩ)
= 5 V
DD
05469-058
Figure 11. Capacitance Input Error vs. Resistance Between CIN1(+) and SHLD;
DD
= 5 V
05469-059
100
–100
–200
–300
–400
–500
–600
CAP ERROR (fF)
–700
–800
–900
–1000
CIN(+) to GND = 8 pF, V
0
0.091
0.270. 480. 96525100
CIN TO SHLD RE SISTANCE (MΩ)
Figure 12. Capacitance Input Error vs. Resistance Between CIN(+) and SHLD;
CIN(+) to GND = 25 pF, V
DD
= 5 V
1.0
0.8
0.6
0.4
0.2
0
–0.2
CAP ERROR (pF)
–0.4
–0.6
–0.8
–1.0
0.01
0.11.010.0
SHLD TO GND RESI STANCE (MΩ)
100
05469-066
Figure 13. Capacitance Input Error vs. Resistance Between SHLD and GND;
= 5 V
DD
8 pF
25 pF
05469-067
10
100
CAP ERROR (fF)
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
CIN(+) to GND = 8 pF; V
10
0
1
SERIAL RESISTANCE (kΩ)
Figure 14. Capacitance Input Error vs. Serial Resistance;
CIN(+) to GND = 8 pF and 25pF, V
0.2
0
–0.2
CAP ERROR (fF)
–0.4
–0.6
3.03.54. 04.55.0
2.55.5
VDD (V)
DD
= 5 V
05469-062
Figure 15. Capacitance Input Power Supply Rejection (PSR);
CIN(+) to GND = 8 pF
Rev. 0 | Page 9 of 28
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