AMD Advanced Micro Devices AM29F016B-120DWI1, AM29F016B-120DTI1, AM29F016B-120DTC1, AM29F016B-120DPI1, AM29F016B-120DPC1 Datasheet
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SUPPLEMENT
Am29F016B Known Good Die
16 Megabit (2 M x 8-Bit)
CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1
DISTINCTIVE CH AR ACTERISTICS
■ 5.0 V ± 10%, single power supply operation
— Minimizes system level power requirements
■ Manufactured on 0.35 µm process technology
■ High performance
— 120 ns access time
■ Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
—<1 µA typical standby current (standard access
time to active mode)
■ Flexible sector architecture
— 32 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
■ Minimum 100,000 write/erase cyc les guaranteed
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
■ Ready/Busy output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
■ Erase Suspend/Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
■ Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
■ Tested to datasheet specifications at
temperature
■ Quality and reliability levels equivalent to
standard packaged components
2/17/98 Publication# 21551 Rev: A Amendment/+1
Issue Date: February 1998
SUPPLEMENT
GENERAL DESCRIPTION
The Am29F016B in Known Good Die (KGD) form is a
16 Mbit, 5.0 volt-only Flash memory . AMD defines KGD
as standard product in die form, tested for functionality
and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. A sector is typically
erased and verified within one second. The device is
erased when shipped from the factory.
Am29F016B Features
The Am29F016B is a 16 Mbit, 5.0 volt-only Flash
memory organized as 2,097,152 bytes of 8 bits each.
The 2 Mbytes of data are divided into 32 sectors of 64
Kbytes each for flexible erase capability. The 8 bits of
data appear on DQ0–DQ7. The Am29F016B is manufactured using AMD’s 0.35 µm process technology.
This device is designed to be programmed in-system
with the standard system 5.0 volt V
volt V
is not required for program or erase
PP
operations. The dev ice can also be programmed in
standard EPROM programmers.
The standard device offers an access time of 120 ns,
allowing high-speed microprocessors to operate
without wait states. To eliminate bus contention, the
device has separate chip enable (CE#), w rite enable
(WE#), and output enable (OE#) controls.
The device is entirely command set compatible with the
JEDEC single -power-supply Flash standar d. Commands are written to the command register using
standard microprocessor write timings. Register
contents serve as input to an internal state machine
that controls the erase and programming circuitry.
Write cycles also internally lat ch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from 12.0 volt Flash or EPROM devices.
The device is programmed by executing the program
command sequence. This invokes the Embedded
Program algorithm—an inter nal algorithm that a utomatically times the program pulse widths and verifies
proper cell margin. The device is erased by executing
the erase command sequence. This invokes the
Embedded Erase algorithm—an internal algorithm that
automatically preprograms the array (if it is not already
programmed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
supply. A 12. 0
CC
The hardware sector group protection feature disables
both program and erase operations in an y combination
of the eight sector groups of memory. A sector group
consists of four adjacent sectors.
The Erase Suspend feature enables the system to put
erase on hold for any period of time to read data from,
or program data to, a sector that is not being erased.
True background erase can thus be achieved.
The device requires only a single 5.0 volt po wer supply
for both read and write functions. Internally generated
and regulated voltages are provided for the program
and erase operations. A low V
detector automatically
CC
inhibits write operations during power transitions. The
host system can detect whether a program or erase
cycle is complete by using the RY/BY# pin, the DQ7
(Data# Polling) or DQ6 (toggle) status bits. After a
program or erase cycle h as been completed, the
device automatically returns to the read mode.
A hardware RESET# pin te rminates any ope ration in
progress. The internal stat e machine is reset to the
read mode. The RESET# pin may be tied to the system
reset circuitry. Therefore, if a system reset occurs
during either an Embedded Program or Embedded
Erase algorithm, the device is automatically reset to the
read mode. This enables the system’s microprocessor
to read the boot-up firmware from the Flash memory.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability, and cost
effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim
tunneling. The bytes are programmed one byte at a
time using the EPROM programming mechanism of hot
electron injection.
ELECTRICAL SPECIFICATIONS
Refer to the Am29F016B data sheet, PID 21444, for full
electrical specifications on the Am29F016B in KGD
form.
PRODUCT SELECTOR GUIDE
Family Part Number Am29F016B KGD
Speed Option (VCC = 5.0 V ± 10%) -120
Max Access Time, t
Max CE# Access, tCE (ns) 120
Max OE# Access, t
2 Am29F016B Known Good Die 2/17/98
(ns) 120
ACC
(ns) 50
OE
DIE PHOTOGRAPH
Orientation
relative to top
left corner of
Gel-Pak
SUPPLEMENT
Orientation relative
to leading edge of
tape and reel
DIE PAD LOCATIONS
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AMD logo location
31353637 323334
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2/17/98 Am29F016B Known Good Die 3
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