SUPPLEMENT
1/13/98 Publication# 21116 Rev: B  Amendment/0
Issue Date: January 1998
Am29F010 Known Good Die
1 Megabi t (1 28 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Fla sh Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■ Single power supply ope ration
— 5.0 V ± 10% for read, erase, and program 
operations
— Simplifies system-level power requirements
■ High performance
— 90 or 12 0 n s max im u m acc e ss t ime
■ Low power con sumption
— 30 mA max active read current 
— 50 mA max program/erase current 
—<25 µA typical standby current
■ Flexible sector architecture
— Eig ht un i for m sec t or s 
— Any combination of sectors can be erased 
— Supports full chip erase
■ Sector protection
— Hardware-based feature that disables/re-
enables program and erase operations in any 
combination of sectors
— Sector protection/unprotecti on can be 
implemented using standard PROM 
programming equipm e nt
■ Embedded Algorithms
— Embedded E rase algorithm automatically 
pre-programs and erases the chi p or any 
combination of designated sector
— Embedded Program algorithm automatically 
programs and verifies data at specified addres s
■ Minimum 100,000 program/erase cycles 
guaranteed
■ Compatible with JEDEC standards
— Pinout and software compatible with 
single-power-supply flash
— Superior inadverten t write prote ction
■ Data Po lling and Toggle Bits
— Provides a software method of detecting 
program or erase cycle completion
■ T ested to datasheet specific ations at 
temperature
■ Quality and reliability levels equivalent to 
standard packaged components