ALLEGRO A3212 User Manual

查询A3212EELLT-T供应商查询A3212EELLT-T供应商
2 x 2 mm MLPD
Package A3212EELLT-T
A3212
MICROPOWER, ULTRA-SENSITIVE
HALL-EF FECT SWITCH
The A3212 integrated circuit is an ultra-sensitive, pole in de pen dent Hall-effect switch with a latched digital output. This sensor is es pe cial ly suited for opera­tion in battery-operated, hand-held equip ment such as cellular and cordless tele phones, pagers, and palmtop com put ers. A 2.5 volt to 3.5 volt operation and a unique clocking scheme reduce the average op er at ing power requirements to less than 15 µW with a 2.75 volt supply.
Unlike other Hall-effect switches, either a north or south pole of suf fi cient strength will turn the output on; in the absence of a magnetic field, the output is off. The polarity independence and minimal power requirement allow these devices to easily replace reed switches for superior reliability and ease of manu­facturing, while eliminating the requirement for signal conditioning.
Data Sheet
27622.61G
Approximate actual size
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, VDD .............................. 5 V
Magnetic Flux Density, B .......... Unlimited
Output Off Voltage, V
Output Current, I
Junction Temperature, TJ ................ +170°C
Operating Temperature, TA
Range 'E-' .................... -40°C to +85°C
Range 'L-' .................. -40°C to +150°C
Storage Temperature Range,
TS .............................. -65°C to +170°C
Caution: These CMOS devices have input static protection (Class 3) but are still sus­ceptible to damage if exposed to extremely high static electrical charges.
OUT
...................... 5 V
OUT
........................... 1 mA
Improved stability is made possible through chopper stabilization (dynamic off­set cancellation), which reduces the residual offset voltage normally caused by device overmolding, temperature de pen den cies, and thermal stress.
This device includes on a single silicon chip a Hall-voltage generator, small-sig­nal amplifier, chopper sta bi li za tion, a latch, and a MOSFET output. Ad vanced BiCMOS processing is used to take advantage of low-voltage and low-power requirements, component matching, very low input-offset errors, and small com­ponent geometries.
Four package styles provide magnetically op ti mized solutions for most ap pli ­ca tions. Miniature low-profile surface-mount package types EH and EL (0.75 and 0.50 mm nominal height) are leadless, LH is a leaded low-profile SMD, and UA is a three-lead SIP for through-hole mount ing. Each package is available in a lead (Pb) free version (suffix, –T) with 100% matte tin plated lead­frame. EL package for limited release, engineering samples available.
FEATURES
Micropower Operation
Operation with North or
2.5 V to 3.5 V Battery Operation
Chopper Stabilized
Superior Temperature Stability Extremely Low Switch-Point Drift Insensitive to Physical Stress
ESD Protected to 5 kV
Sol id-State Reliability
Small Size
Easily Manufacturable with Magnet Pole Independence
South Pole
A3212
MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCH
Use complete part numbers when ordering
Product Selection Guide
Part Number Pb-free
A3212EEHLT Tape and Reel (3000)
A3212EEHLT–T Yes Tape and Reel (3000)
A3212EELLT–T Yes Tape and Reel (2000)
A3212ELHLT Tape and Reel (3000)
A3212ELHLT–T Yes Tape and Reel (3000)
A3212EUA Bulk Pack (500)
A3212EUA–T Yes Bulk Pack (500)
A3212LLHLT Tape and Reel (3000)
A3212LLHLT–T Yes Tape and Reel (3000)
A3212LUA Bulk Pack (500)
A3212LUA–T Yes Bulk Pack (500)
*Contact Allegro for additional packaging and handling options.
Packing*
(Units/Pack)
FUNCTIONAL BLOCK DIAGRAM
SUPPLY
Package
Leadless Surface Mount
3-Pin Surface Mount
SIP-3 Through Hole, Straight Lead
3-Pin Surface Mount
SIP-3 Through Hole, Straight Lead
Ambient
Temperature
(°C)
T
A
–40 to 85
–40 to 150
SWITCH
TIMING
LOGIC
OUTPUT
X
& HOLD
DYNAMIC
OFFSET CANCELLATION
2
SAMPLE
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
LATCH
GROUND
Dwg. FH-020-5
3212
X
Dwg. PH-016-2
SUPPLY
GROUND
OUTPUT
V
DD
GROUND
NO
CONNECTION
NO
CONNECTION
5
4
6
1
3
2
MICROPOWER,
ULTRA-SENSITIVE
HALL-EFFECT SWITCH
Package Suffix ‘EH’ Pinning
(Leadless Chip Carrier)
Package Suffix ‘EL’ Pinning
(Leadless Chip Carrier)
3
V
DD
12
SUPPLY
GROUND
OUTPUT
Dwg. PH-016-1
Package Suffix ‘LH’ Pinning
(SOT23W)
Package Suffix ‘UA’ Pinning
(SIP)
3
X
V
DD
V
DD
12
SUPPLY
GROUND
Dwg. PH-016-1
OUTPUT
Pinning is shown viewed from branded side.
1
SUPPLY
32
GROUND
Dwg. PH-016
OUTPUT
www.allegromicro.com
3
Copyright © 2002, 2003 Allegro MicroSystems, Inc.
A3212
MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCH
ELECTRICAL CHARACTERISTICS over operating voltage and temperature range (unless otherwise specified).
Limits
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Supply Voltage Range V
Output Leakage Current I
Output On Voltage V
Awake Time t
Period t
DD
OFF
OUT
awake
period
Operating
V
OUT
I
OUT
Duty Cycle d.c. 0.1 %
1
= 3.5 V, B
RPN
< B < B
RPS
2.5 2.75 3.5 V
–<1.01.0µA
= 1 mA, VDD = 2.75 V 100 300 mV
–4590µs
–4590ms
Chopping Frequency f
Supply Current I
DD(EN)
I
DD(DIS)
I
DD(AVG)
C
Chip awake (enabled) 2.0 mA
Chip asleep (disabled) 8.0 µA
VDD = 2.75 V 5.1 10 µA
= 3.5 V 6.7 10 µA
V
DD
340 kHz
NOTES: 1. Operate and release points will vary with supply voltage.
2. B
= operate point (output turns on); B
OPx
= release point (output turns off).
RPx
3. Typical Data is at TA = +25°C and VDD = 2.75 V and is for design information only.
MAGNETIC CHARACTERISTICS over operating voltage and temperature range (unless otherwise specified).
Limits
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Operate Points B
Release Points B
Hysteresis B
OPS
B
OPN
RPS
B
RPN
hys
South pole to branded side 37 55 G
North pole to branded side -55 -40 G
South pole to branded side 10 31 G
North pole to branded side -34 -10 G
|B
- B
OPx
|–5.9G
RPx
NOTES: 1. Negative flux densities are defined as less than zero (algebraic convention), i.e., -50 G is less than +10 G.
2. B
= operate point (output turns on); B
OPx
= release point (output turns off).
RPx
3. Typical Data is at TA = +25°C and VDD = 2.75 V and is for design information only.
4. 1 gauss (G) is exactly equal to 0.1 millitesla (mT).
4
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
Loading...
+ 9 hidden pages