v01.0107
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
1
AMPLIFIERS - CHIP
Typical Appli cations
The HMC592 is ideal for use as a power ampli er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space
Functional Diagram
Features
Saturated Output Power:
+31 dBm @ 21% PAE
Output IP3: +38 dBm
Gain: 19 dB
DC Supply: +7.0 V @ 750 mA
50 Ohm Matched Input/Output
Die Size: 2.47 mm x 1.17 mm x 0.1 mm
General Description
The HMC592 is a high dynamic range GaAs PHEMT
MMIC 1 Watt Power Ampli er which operates from
10 to 13 GHz. This ampli er die provides 19 dB of
gain and +31 dBm of saturated power, at 21% PAE
from a +7.0V supply. The RF I/Os are DC blocked and
matched to 50 Ohms for ease of integration into MultiChip-Modules (MCMs). All data is taken with the chip
in a 50 ohm test xture connected via 0.025mm (1
mil) diameter wire bonds of length 0.31mm (12 mils).
For applications which require optimum OIP3, Idd
should be set for 400 mA, to yield +38 dBm OIP3. For
applications which require optimum output P1dB, Idd
should be set for 750 mA, to yield +31 dBm Output
P1dB.
1 - 230
Electrical Specifications, T
Frequency Range 10 - 13 GHz
Gain 16 19 dB
Gain Variation Over Temperature 0.05 dB/ °C
Input Return Loss 10 dB
Output Return Loss 12 dB
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat) 31.2 dBm
Output Third Order Intercept (IP3)
Supply Current (Idd) 750 800 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd= 750 mA typical.
[2] Measurement taken at 7V @ 400 mA, Pin / Tone = -15 dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
[2]
= +25° C, Vdd = +7V, Idd = 750 mA*
A
Parameter Min. Typ. Max. Units
28 31 dBm
38 dBm
Order On-line at www.hittite.com
v01.0107
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
Broadband Gain & Return Loss
30
25
20
15
10
5
0
-5
RESPONSE (dB)
-10
-15
-20
-25
7 8 9 10 11 12 13 14 15
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
28
26
24
22
20
18
16
GAIN (dB)
14
12
10
8
6
9 9.5 10 10.5 11 11.5 12 12.5 13
FREQUENCY (GHz)
+25C
+85C
-55C
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
0
-5
-10
0
-5
-10
1
AMPLIFIERS - CHIP
-15
RETURN LOSS (dB)
-20
-25
8 9 10 11 12 13 14
FREQUENCY (GHz)
+25C
+85C
-55C
-15
RETURN LOSS (dB)
-20
-25
8 9 10 11 12 13 14
FREQUENCY (GHz)
P1dB vs. Temperature Psat vs. Temperature
33
32
31
30
29
28
27
P1dB (dBm)
26
25
24
23
9 9.5 10 10.5 11 11.5 12 12.5 13
FREQUENCY (GHz)
+25C
+85C
-55C
33
32
31
30
29
28
27
Psat (dBm)
26
25
24
23
9 9.5 10 10.5 11 11.5 12 12.5 13
FREQUENCY (GHz)
+25C
+85C
-55C
+25C
+85C
-55C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
1 - 231
v01.0107
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
1
AMPLIFIERS - CHIP
33
32
31
30
29
28
27
P1dB (dBm)
26
25
24
23
9 9.5 10 10.5 11 11.5 12 12.5 13
FREQUENCY (GHz)
400mA
500mA
600mA
700mA
750mA
Output IP3 vs. Temperature
7V @ 400 mA, Pin/Tone = -15 dBm
44
42
40
38
36
34
IP3 (dBm)
32
30
28
26
24
9 9.5 10 10.5 11 11.5 12 12.5 13
FREQUENCY (GHz)
+25C
+85C
-55C
Psat vs. CurrentP1dB vs. Current
33
32
31
30
29
28
27
Psat (dBm)
26
25
24
23
9 9.5 10 10.5 11 11.5 12 12.5 13
FREQUENCY (GHz)
400mA
500mA
600mA
700mA
750mA
Power Compression @ 8 GHz, 7V @ 750 mA
35
30
25
20
15
10
Pout(dBm), GAIN (dB), PAE(%)
5
0
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16
Pout
Gain
PAE
INPUT POWER (dBm)
1 - 232
Output IM3, 7V @ 400 mA Output IM3, 7V @ 750 mA
90
80
70
60
50
40
IM3 (dBc)
30
20
10
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
Pin/Tone (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
90
80
70
60
50
40
IM3 (dBc)
30
20
10
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
Pin/Tone (dBm)
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz