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v01.0107
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
1
AMPLIFIERS - CHIP
Typical Appli cations
The HMC592 is ideal for use as a power ampli er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space
Functional Diagram
Features
Saturated Output Power:
+31 dBm @ 21% PAE
Output IP3: +38 dBm
Gain: 19 dB
DC Supply: +7.0 V @ 750 mA
50 Ohm Matched Input/Output
Die Size: 2.47 mm x 1.17 mm x 0.1 mm
General Description
The HMC592 is a high dynamic range GaAs PHEMT
MMIC 1 Watt Power Ampli er which operates from
10 to 13 GHz. This ampli er die provides 19 dB of
gain and +31 dBm of saturated power, at 21% PAE
from a +7.0V supply. The RF I/Os are DC blocked and
matched to 50 Ohms for ease of integration into MultiChip-Modules (MCMs). All data is taken with the chip
in a 50 ohm test xture connected via 0.025mm (1
mil) diameter wire bonds of length 0.31mm (12 mils).
For applications which require optimum OIP3, Idd
should be set for 400 mA, to yield +38 dBm OIP3. For
applications which require optimum output P1dB, Idd
should be set for 750 mA, to yield +31 dBm Output
P1dB.
1 - 230
Electrical Specifications, T
Frequency Range 10 - 13 GHz
Gain 16 19 dB
Gain Variation Over Temperature 0.05 dB/ °C
Input Return Loss 10 dB
Output Return Loss 12 dB
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat) 31.2 dBm
Output Third Order Intercept (IP3)
Supply Current (Idd) 750 800 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd= 750 mA typical.
[2] Measurement taken at 7V @ 400 mA, Pin / Tone = -15 dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
[2]
= +25° C, Vdd = +7V, Idd = 750 mA*
A
Parameter Min. Typ. Max. Units
28 31 dBm
38 dBm
Order On-line at www.hittite.com
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v01.0107
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
Broadband Gain & Return Loss
30
25
20
15
10
5
0
-5
RESPONSE (dB)
-10
-15
-20
-25
7 8 9 10 11 12 13 14 15
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
28
26
24
22
20
18
16
GAIN (dB)
14
12
10
8
6
9 9.5 10 10.5 11 11.5 12 12.5 13
FREQUENCY (GHz)
+25C
+85C
-55C
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
0
-5
-10
0
-5
-10
1
AMPLIFIERS - CHIP
-15
RETURN LOSS (dB)
-20
-25
8 9 10 11 12 13 14
FREQUENCY (GHz)
+25C
+85C
-55C
-15
RETURN LOSS (dB)
-20
-25
8 9 10 11 12 13 14
FREQUENCY (GHz)
P1dB vs. Temperature Psat vs. Temperature
33
32
31
30
29
28
27
P1dB (dBm)
26
25
24
23
9 9.5 10 10.5 11 11.5 12 12.5 13
FREQUENCY (GHz)
+25C
+85C
-55C
33
32
31
30
29
28
27
Psat (dBm)
26
25
24
23
9 9.5 10 10.5 11 11.5 12 12.5 13
FREQUENCY (GHz)
+25C
+85C
-55C
+25C
+85C
-55C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
1 - 231
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v01.0107
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
1
AMPLIFIERS - CHIP
33
32
31
30
29
28
27
P1dB (dBm)
26
25
24
23
9 9.5 10 10.5 11 11.5 12 12.5 13
FREQUENCY (GHz)
400mA
500mA
600mA
700mA
750mA
Output IP3 vs. Temperature
7V @ 400 mA, Pin/Tone = -15 dBm
44
42
40
38
36
34
IP3 (dBm)
32
30
28
26
24
9 9.5 10 10.5 11 11.5 12 12.5 13
FREQUENCY (GHz)
+25C
+85C
-55C
Psat vs. CurrentP1dB vs. Current
33
32
31
30
29
28
27
Psat (dBm)
26
25
24
23
9 9.5 10 10.5 11 11.5 12 12.5 13
FREQUENCY (GHz)
400mA
500mA
600mA
700mA
750mA
Power Compression @ 8 GHz, 7V @ 750 mA
35
30
25
20
15
10
Pout(dBm), GAIN (dB), PAE(%)
5
0
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16
Pout
Gain
PAE
INPUT POWER (dBm)
1 - 232
Output IM3, 7V @ 400 mA Output IM3, 7V @ 750 mA
90
80
70
60
50
40
IM3 (dBc)
30
20
10
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
Pin/Tone (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
90
80
70
60
50
40
IM3 (dBc)
30
20
10
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
Pin/Tone (dBm)
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
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v01.0107
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
36
32
28
24
20
16
GAIN (dB), P1dB (dBm), Psat(dBm)
12
400 450 500 550 600 650 700 750
Idd SUPPLY CURRENT (mA)
Gain
P1dB
Psat
Reverse Isolation vs. Temperature
0
-10
-20
-30
-40
-50
ISOLATION (dB)
-60
-70
-80
9 9.5 10 10.5 11 11.5 12 12.5 13
FREQUENCY (GHz)
+25C
+85C
-55C
Gain & Power vs. Supply Voltage @ 8 GHzGain & Power vs. Supply Current @ 8 GHz
36
32
28
24
20
16
GAIN (dB), P1dB (dBm), Psat(dBm)
12
6.5 7 7.5
Vdd SUPPLY VOLTAGE (Vdc)
Gain
P1dB
Psat
Power Dissipation
6
5.75
5.5
5.25
5
4.75
4.5
4.25
4
Power Dissipation (W)
3.75
3.5
3.25
3
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
INPUT POWER (dBm)
1
AMPLIFIERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
1 - 233
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v01.0107
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
1
AMPLIFIERS - CHIP
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +8 Vdc
Gate Bias Voltage (Vgg) -2.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +7.0 Vdc) +15 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 62.7 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
5.64 W
15.9 4 ° C/ W
Typical Supply Current vs. Vdd
Vdd (V) Idd (mA)
Outline Drawing
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 750 mA at +7.0V
+6.5 757
+7.0 750
+7.5 745
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
1 - 234
Die Packaging Information
Standard Alternate
GP-1 [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
[1]
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BON D PAD IS .004” SQ UARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: G OLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BON D PADS.
8. OVERALL DIE SIZE ± .00 2
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v01.0107
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
1RFIN
Gate control for ampli er. Adjust to achieve Idd of 750 mA.
2, 4, 6 Vgg 1-3
3, 5, 7 Vdd 1-3
8RFOUT
Die Bottom GND Die bottom must be connected to RF/DC ground.
Please follow “MMIC Ampli er Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
Power Supply Voltage for the ampli er. External bypass
This pad is AC coupled and
matched to 50 Ohms.
0.1 μF are required.
capacitors of 100 pF and 0.1 μF are required.
This pad is AC coupled and
matched to 50 Ohms.
1
AMPLIFIERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
1 - 235
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1
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
Assembly Diagram
AMPLIFIERS - CHIP
1 - 236
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
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v01.0107
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waf e or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a
tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290
deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than
3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be
started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm
(12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Figure 2.
Thin Film Substrate
Wire Bond
Thin Film Substrate
1
AMPLIFIERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
1 - 237
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