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v01.0107
HMC591
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
1
AMPLIFIERS - CHIP
Typical Appli cations
The HMC591 is ideal for use as a power ampli er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space
Functional Diagram
Features
Saturated Output Power: +34 dBm @ 24% PAE
Output IP3: +43 dBm
Gain: 23 dB
DC Supply: +7.0 V @ 1340 mA
50 Ohm Matched Input/Output
2.47 mm x 2.49 mm x 0.1 mm
General Description
The HMC591 is a high dynamic range GaAs PHEMT
MMIC 2 Watt Power Ampli er which operates from 6
to 10 GHz. This ampli er die provides 23 dB of gain
and +34 dBm of saturated power, at 24% PAE from
a +7.0V supply. Output IP3 is +43 dBm typical. The
RF I/Os are DC blocked and matched to 50 Ohms for
ease of integration into Multi-Chip-Modules (MCMs).
All data is taken with the chip in a 50 ohm test xture
connected via 0.025mm (1 mil) diameter wire bonds
of length 0.31mm (12 mils). For applications which
require optimum OIP3, Idd should be set for 940 mA,
to yield +43 dBm OIP3. For applications which require
optimum output P1dB, Idd should be set for 1340 mA,
to yield +33 dBm Output P1dB.
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Electrical Specifications, T
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 6 - 10 6.8 - 9 GHz
Gain 20 23 20 23 dB
Gain Variation Over Temperature 0.05 0.05 dB/ °C
Input Return Loss 12 14 dB
Output Return Loss 11 10 dB
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat) 33.5 34 dBm
Output Third Order Intercept (IP3)
Supply Current (Idd) 1340 1340 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA t ypical.
[2] Measurement taken at 7V @ 940mA, Pin / Tone = -15 dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
[2]
= +25° C, Vdd = +7V, Idd = 1340 mA
A
30 33 30.5 33.5 dBm
43 43 dBm
Order On-line at www.hittite.com
[1]
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v01.0107
HMC591
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
Broadband Gain & Return Loss
30
25
20
15
10
5
0
-5
RESPONSE (dB)
-10
-15
-20
-25
456789101112
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
34
32
30
28
26
24
22
GAIN (dB)
20
18
16
14
12
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
+25C
+85C
-40C
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
0
-5
-10
0
-5
-10
1
AMPLIFIERS - CHIP
-15
RETURN LOSS (dB)
-20
-25
456789101112
FREQUENCY (GHz)
+25C
+85C
-40C
-15
RETURN LOSS (dB)
-20
-25
456789101112
FREQUENCY (GHz)
P1dB vs. Temperature Psat vs. Temperature
36
35
34
33
32
31
30
P1dB (dBm)
29
28
27
26
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
+25C
+85C
-55C
36
35
34
33
32
31
30
PSAT (dBm)
29
28
27
26
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
+25C
+85C
-55C
+25C
+85C
-40C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
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v00.0806
HMC591
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
1
AMPLIFIERS - CHIP
36
35
34
33
32
31
30
P1dB (dBm)
29
28
27
26
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
940 mA
1140 mA
1340 mA
Output IP3 vs. Temperature
7V @ 940 mA, Pin/Tone = -15 dBm
48
46
44
42
40
38
36
OIP3 (dBm)
34
32
30
28
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
+25C
+85C
-55C
Psat vs. CurrentP1dB vs. Current
36
35
34
33
32
31
30
PSAT (dBm)
29
28
27
26
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
940 mA
1140 mA
1340 mA
Power Compression @ 8 GHz,
7V @ 1340 mA
35
30
25
20
15
10
Pout(dBm), GAIN (dB), PAE(%)
5
0
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16
Pout
Gain
PAE
INPUT POWER (dBm)
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Output IM3, 7V @ 940 mA Output IM3, 7V @ 1340 mA
90
80
70
60
50
IM3 (dBc)
40
30
20
10
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
Pin/Tone (dBm)
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
90
80
70
60
50
IM3 (dBc)
40
30
20
10
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
Pin/Tone (dBm)
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
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v00.0806
HMC591
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
38
36
34
32
30
28
26
24
22
20
GAIN (dB), P1dB (dBm), Psat(dBm)
18
6.5 7 7.5
Vdd SUPPLY VOLTAGE (V)
GAIN
P1dB
Psat
Reverse Isolation
vs. Temperature, 7V @ 1340 mA
0
-10
-20
-30
-40
-50
ISOLATION (dB)
-60
-70
-80
6 6.5 7 7.5 8 8.5 9 9.5 10
FREQUENCY (GHz)
+25C
+85C
-40C
Gain & Power vs. Supply Current @ 8 GHzGain & Power vs. Supply Voltage @ 8 GHz
38
36
34
32
30
28
26
24
22
20
GAIN (dB), P1dB (dBm), Psat(dBm)
18
940 1140 1340
Idd SUPPLY CURRENT (mA)
GAIN
P1dB
Psat
Power Dissipation
10
9.5
9
8.5
8
7.5
7
6.5
6
POWER DISSIPATION (W)
5.5
5
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14
6GHz
7GHz
8GHz
9GHz
10GHz
INPUT POWER (dBm)
1
AMPLIFIERS - CHIP
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +8 Vdc
Gate Bias Voltage (Vgg) -2.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +7.0 Vdc) +15 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 117.6 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
10.59 W
8.5 °C/W
Order On-line at www.hittite.com
Typical Supply Current vs. Vdd
Vdd (V) Idd (mA)
+6.5 1355
+7.0 1340
+7.5 1325
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1340 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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v00.0806
HMC591
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
1
Outline Drawing
AMPLIFIERS - CHIP
1 - 226
Die Packaging Information
Standard Alternate
GP-1 [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
[1]
Order On-line at www.hittite.com
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BON D PAD IS .004” SQ UARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: G OLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BON D PADS.
8. OVERALL DIE SIZE ± .00 2
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v00.0806
HMC591
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
1RFIN
3 - 5, 7, 8 Vdd 1-5
6RFOUT
9Vgg
Die Bottom GND Die bottom must be connected to RF/DC ground.
Power Supply Voltage for the ampli er. External bypass
Gate control for ampli er. Adjust to achieve Idd of 1340 mA.
Please follow “MMIC Ampli er Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
This pad is AC coupled and
matched to 50 Ohms.
capacitors of 100 pF and 0.1 μF are required.
This pad is AC coupled and
matched to 50 Ohms.
0.1 μF are required.
1
AMPLIFIERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
1 - 227
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1
HMC591
v00.0806
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
Assembly Diagram
AMPLIFIERS - CHIP
1 - 228
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
www.DataSheet4U.com
v00.0806
HMC591
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 10.0 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waf e or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a
tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290
deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than
3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be
started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm
(12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Figure 2.
Thin Film Substrate
Wire Bond
Thin Film Substrate
1
AMPLIFIERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250 -3373
Order On-line at www.hittite.com
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